KR20230068305A - 이물 검사 장치, 노광 장치 및 물품 제조 방법 - Google Patents

이물 검사 장치, 노광 장치 및 물품 제조 방법 Download PDF

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Publication number
KR20230068305A
KR20230068305A KR1020220142014A KR20220142014A KR20230068305A KR 20230068305 A KR20230068305 A KR 20230068305A KR 1020220142014 A KR1020220142014 A KR 1020220142014A KR 20220142014 A KR20220142014 A KR 20220142014A KR 20230068305 A KR20230068305 A KR 20230068305A
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KR
South Korea
Prior art keywords
foreign material
original plate
light
exposure
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020220142014A
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English (en)
Korean (ko)
Inventor
고헤이 마에다
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20230068305A publication Critical patent/KR20230068305A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Pathology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020220142014A 2021-11-10 2022-10-31 이물 검사 장치, 노광 장치 및 물품 제조 방법 Pending KR20230068305A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021183616A JP7778535B2 (ja) 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法
JPJP-P-2021-183616 2021-11-10

Publications (1)

Publication Number Publication Date
KR20230068305A true KR20230068305A (ko) 2023-05-17

Family

ID=86266358

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220142014A Pending KR20230068305A (ko) 2021-11-10 2022-10-31 이물 검사 장치, 노광 장치 및 물품 제조 방법

Country Status (4)

Country Link
JP (1) JP7778535B2 (cg-RX-API-DMAC7.html)
KR (1) KR20230068305A (cg-RX-API-DMAC7.html)
CN (1) CN116107158A (cg-RX-API-DMAC7.html)
TW (1) TWI894487B (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258880A (ja) 2010-06-11 2011-12-22 Canon Inc 異物検査装置、それを用いた露光装置及びデバイスの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228428A (ja) * 2001-02-02 2002-08-14 Nikon Corp 異物検出装置及び露光装置
JP2004271421A (ja) * 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
NL2003678A (en) * 2008-12-17 2010-06-21 Asml Holding Nv Euv mask inspection system.
JP2010203776A (ja) * 2009-02-27 2010-09-16 Hitachi High-Technologies Corp 表面検査装置及びその校正方法
JP2010272553A (ja) * 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011174817A (ja) * 2010-02-24 2011-09-08 Canon Inc 異物検査装置、露光装置及びデバイス製造方法
JP2013178231A (ja) * 2012-02-01 2013-09-09 Canon Inc 検査装置、検査方法、リソグラフィ装置及びインプリント装置
JP2015079075A (ja) * 2013-10-16 2015-04-23 キヤノン株式会社 投影露光装置、異物検査装置
JP5633836B1 (ja) * 2014-04-17 2014-12-03 レーザーテック株式会社 照明装置、及び検査装置
JP7292842B2 (ja) * 2018-09-21 2023-06-19 キヤノン株式会社 異物検査装置、露光装置、および物品製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258880A (ja) 2010-06-11 2011-12-22 Canon Inc 異物検査装置、それを用いた露光装置及びデバイスの製造方法

Also Published As

Publication number Publication date
JP7778535B2 (ja) 2025-12-02
TWI894487B (zh) 2025-08-21
JP2023071041A (ja) 2023-05-22
TW202324498A (zh) 2023-06-16
CN116107158A (zh) 2023-05-12

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