CN116107158A - 异物检查装置、曝光装置以及物品的制造方法 - Google Patents

异物检查装置、曝光装置以及物品的制造方法 Download PDF

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Publication number
CN116107158A
CN116107158A CN202211382397.6A CN202211382397A CN116107158A CN 116107158 A CN116107158 A CN 116107158A CN 202211382397 A CN202211382397 A CN 202211382397A CN 116107158 A CN116107158 A CN 116107158A
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CN
China
Prior art keywords
foreign matter
original plate
exposure
light
inspection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211382397.6A
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English (en)
Chinese (zh)
Inventor
前田浩平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN116107158A publication Critical patent/CN116107158A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Pathology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202211382397.6A 2021-11-10 2022-11-07 异物检查装置、曝光装置以及物品的制造方法 Pending CN116107158A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-183616 2021-11-10
JP2021183616A JP7778535B2 (ja) 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法

Publications (1)

Publication Number Publication Date
CN116107158A true CN116107158A (zh) 2023-05-12

Family

ID=86266358

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211382397.6A Pending CN116107158A (zh) 2021-11-10 2022-11-07 异物检查装置、曝光装置以及物品的制造方法

Country Status (4)

Country Link
JP (1) JP7778535B2 (cg-RX-API-DMAC7.html)
KR (1) KR20230068305A (cg-RX-API-DMAC7.html)
CN (1) CN116107158A (cg-RX-API-DMAC7.html)
TW (1) TWI894487B (cg-RX-API-DMAC7.html)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271421A (ja) * 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
JP2010272553A (ja) * 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011174817A (ja) * 2010-02-24 2011-09-08 Canon Inc 異物検査装置、露光装置及びデバイス製造方法
JP5633836B1 (ja) * 2014-04-17 2014-12-03 レーザーテック株式会社 照明装置、及び検査装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228428A (ja) * 2001-02-02 2002-08-14 Nikon Corp 異物検出装置及び露光装置
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
NL2003678A (en) * 2008-12-17 2010-06-21 Asml Holding Nv Euv mask inspection system.
JP2010203776A (ja) * 2009-02-27 2010-09-16 Hitachi High-Technologies Corp 表面検査装置及びその校正方法
JP5506555B2 (ja) * 2010-06-11 2014-05-28 キヤノン株式会社 異物検査装置、それを用いた露光装置及びデバイスの製造方法
JP2013178231A (ja) * 2012-02-01 2013-09-09 Canon Inc 検査装置、検査方法、リソグラフィ装置及びインプリント装置
JP2015079075A (ja) * 2013-10-16 2015-04-23 キヤノン株式会社 投影露光装置、異物検査装置
JP7292842B2 (ja) * 2018-09-21 2023-06-19 キヤノン株式会社 異物検査装置、露光装置、および物品製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271421A (ja) * 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
JP2010272553A (ja) * 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011174817A (ja) * 2010-02-24 2011-09-08 Canon Inc 異物検査装置、露光装置及びデバイス製造方法
JP5633836B1 (ja) * 2014-04-17 2014-12-03 レーザーテック株式会社 照明装置、及び検査装置

Also Published As

Publication number Publication date
JP7778535B2 (ja) 2025-12-02
TWI894487B (zh) 2025-08-21
JP2023071041A (ja) 2023-05-22
TW202324498A (zh) 2023-06-16
KR20230068305A (ko) 2023-05-17

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