TWI892993B - 控制模組 - Google Patents

控制模組

Info

Publication number
TWI892993B
TWI892993B TW109125947A TW109125947A TWI892993B TW I892993 B TWI892993 B TW I892993B TW 109125947 A TW109125947 A TW 109125947A TW 109125947 A TW109125947 A TW 109125947A TW I892993 B TWI892993 B TW I892993B
Authority
TW
Taiwan
Prior art keywords
power
signal
station
mhz
integrated circuit
Prior art date
Application number
TW109125947A
Other languages
English (en)
Chinese (zh)
Other versions
TW202121483A (zh
Inventor
蘇尼爾 卡普爾
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202121483A publication Critical patent/TW202121483A/zh
Application granted granted Critical
Publication of TWI892993B publication Critical patent/TWI892993B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW109125947A 2019-07-31 2020-07-31 控制模組 TWI892993B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962880822P 2019-07-31 2019-07-31
US62/880,822 2019-07-31

Publications (2)

Publication Number Publication Date
TW202121483A TW202121483A (zh) 2021-06-01
TWI892993B true TWI892993B (zh) 2025-08-11

Family

ID=74230626

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109125947A TWI892993B (zh) 2019-07-31 2020-07-31 控制模組
TW114125016A TW202541116A (zh) 2019-07-31 2020-07-31 製造腔室、以及射頻功率產生方法與設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW114125016A TW202541116A (zh) 2019-07-31 2020-07-31 製造腔室、以及射頻功率產生方法與設備

Country Status (6)

Country Link
US (2) US12205796B2 (https=)
JP (2) JP7566873B2 (https=)
KR (1) KR102882813B1 (https=)
CN (2) CN118866641A (https=)
TW (2) TWI892993B (https=)
WO (1) WO2021022303A1 (https=)

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KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
JP7612665B2 (ja) * 2019-08-19 2025-01-14 アプライド マテリアルズ インコーポレイテッド 複数の周波数においてｒｆパラメータを制御する方法および装置
JP2021038452A (ja) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
WO2021113387A1 (en) 2019-12-02 2021-06-10 Lam Research Corporation Impedance transformation in radio-frequency-assisted plasma generation
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
KR20230021739A (ko) 2020-06-12 2023-02-14 램 리써치 코포레이션 Rf 커플링 구조체들에 의한 플라즈마 형성의 제어
JP7590079B2 (ja) * 2021-02-05 2024-11-26 東京エレクトロン株式会社 基板処理装置、基板処理システム及び異常検知方法
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KR20240138176A (ko) * 2023-03-10 2024-09-20 삼성전자주식회사 Rf 전력 제공 장치 및 그것의 동작 방법
CN120261246A (zh) * 2024-01-02 2025-07-04 北京北方华创微电子装备有限公司 射频功率输出电路和半导体工艺设备
US20250385074A1 (en) * 2024-06-18 2025-12-18 Applied Materials, Inc. Radio frequency matching network

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