KR102882813B1 - 복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기 - Google Patents

복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기

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Publication number
KR102882813B1
KR102882813B1 KR1020227006928A KR20227006928A KR102882813B1 KR 102882813 B1 KR102882813 B1 KR 102882813B1 KR 1020227006928 A KR1020227006928 A KR 1020227006928A KR 20227006928 A KR20227006928 A KR 20227006928A KR 102882813 B1 KR102882813 B1 KR 102882813B1
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KR
South Korea
Prior art keywords
signal
radio frequency
station
frequency power
integrated circuit
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KR1020227006928A
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English (en)
Korean (ko)
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KR20220038492A (ko
Inventor
수닐 카푸어
Original Assignee
램 리써치 코포레이션
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227006928A 2019-07-31 2020-07-30 복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기 Active KR102882813B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962880822P 2019-07-31 2019-07-31
US62/880,822 2019-07-31
PCT/US2020/070333 WO2021022303A1 (en) 2019-07-31 2020-07-30 Radio frequency power generator having multiple output ports

Publications (2)

Publication Number Publication Date
KR20220038492A KR20220038492A (ko) 2022-03-28
KR102882813B1 true KR102882813B1 (ko) 2025-11-06

Family

ID=74230626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227006928A Active KR102882813B1 (ko) 2019-07-31 2020-07-30 복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기

Country Status (6)

Country Link
US (2) US12205796B2 (https=)
JP (2) JP7566873B2 (https=)
KR (1) KR102882813B1 (https=)
CN (2) CN118866641A (https=)
TW (2) TWI892993B (https=)
WO (1) WO2021022303A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
JP7612665B2 (ja) * 2019-08-19 2025-01-14 アプライド マテリアルズ インコーポレイテッド 複数の周波数においてｒｆパラメータを制御する方法および装置
JP2021038452A (ja) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
WO2021113387A1 (en) 2019-12-02 2021-06-10 Lam Research Corporation Impedance transformation in radio-frequency-assisted plasma generation
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
KR20230021739A (ko) 2020-06-12 2023-02-14 램 리써치 코포레이션 Rf 커플링 구조체들에 의한 플라즈마 형성의 제어
JP7590079B2 (ja) * 2021-02-05 2024-11-26 東京エレクトロン株式会社 基板処理装置、基板処理システム及び異常検知方法
US12586759B2 (en) * 2023-01-27 2026-03-24 Mks Inc. Pulsed RF plasma generator with high dynamic range
KR20240138176A (ko) * 2023-03-10 2024-09-20 삼성전자주식회사 Rf 전력 제공 장치 및 그것의 동작 방법
CN120261246A (zh) * 2024-01-02 2025-07-04 北京北方华创微电子装备有限公司 射频功率输出电路和半导体工艺设备
US20250385074A1 (en) * 2024-06-18 2025-12-18 Applied Materials, Inc. Radio frequency matching network

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150348854A1 (en) * 2014-06-03 2015-12-03 Lam Research Corporation Multi-station plasma reactor with rf balancing

Family Cites Families (185)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1524965A (en) 1974-10-15 1978-09-13 Cincinnati Electronics Corp Technique for automatic matching of high q-loads
US4044357A (en) 1975-12-04 1977-08-23 Westinghouse Electric Corporation FM/CW radar including a novel receiver protector of general utility
DE2744862C2 (de) 1977-10-05 1982-07-08 Endress U. Hauser Gmbh U. Co, 7867 Maulburg Aus Koaxialleitungsstücken gebildeter Hochfrequenztransformator
US6068784A (en) 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5155547A (en) 1990-02-26 1992-10-13 Leco Corporation Power control circuit for inductively coupled plasma atomic emission spectroscopy
US6444137B1 (en) 1990-07-31 2002-09-03 Applied Materials, Inc. Method for processing substrates using gaseous silicon scavenger
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US5195045A (en) 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US5369795A (en) 1991-05-29 1994-11-29 Hewlett-Packard Company High frequency transformer and mixer using the same
US5392018A (en) 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US5314603A (en) 1991-07-24 1994-05-24 Tokyo Electron Yamanashi Limited Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber
JP2775656B2 (ja) 1991-09-30 1998-07-16 株式会社島津製作所 成膜装置
US5499384A (en) * 1992-12-31 1996-03-12 Seiko Epson Corporation Input output control unit having dedicated paths for controlling the input and output of data between host processor and external device
DK63694A (da) 1994-06-06 1995-03-27 Adser Larsen Steen Fremgangsmåde og apparat til regulering af overførsel af højfrekvent effekt fra en elektrisk vekselstrømsgenerator til et emne, der skal behandles
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
EP0715334B1 (en) 1994-11-30 1999-04-14 Applied Materials, Inc. Plasma reactors for processing semiconductor wafers
US5712592A (en) 1995-03-06 1998-01-27 Applied Materials, Inc. RF plasma power supply combining technique for increased stability
JPH08274067A (ja) 1995-03-30 1996-10-18 Hitachi Ltd プラズマ発生装置
JPH0982495A (ja) 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US5770922A (en) 1996-07-22 1998-06-23 Eni Technologies, Inc. Baseband V-I probe
EP0840350A2 (en) 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
US5866985A (en) 1996-12-03 1999-02-02 International Business Machines Corporation Stable matching networks for plasma tools
US6239587B1 (en) 1997-01-03 2001-05-29 Texas Instruments Incorporated Probe for monitoring radio frequency voltage and current
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
JP2001516954A (ja) 1997-09-17 2001-10-02 東京エレクトロン株式会社 電気インピーダンス整合システムとその方法
US6028014A (en) 1997-11-10 2000-02-22 Lsi Logic Corporation Plasma-enhanced oxide process optimization and material and apparatus therefor
US6020794A (en) 1998-02-09 2000-02-01 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator
JPH11233294A (ja) 1998-02-18 1999-08-27 Jeol Ltd 高周波電源
US6273022B1 (en) 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6200911B1 (en) 1998-04-21 2001-03-13 Applied Materials, Inc. Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
JP3716680B2 (ja) 1999-08-19 2005-11-16 株式会社日立製作所 プラズマ処理装置
KR100338057B1 (ko) 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
US6447636B1 (en) 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
JP4352562B2 (ja) 2000-03-02 2009-10-28 株式会社デンソー 信号処理装置
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6922324B1 (en) 2000-07-10 2005-07-26 Christopher M. Horwitz Remote powering of electrostatic chucks
US8744384B2 (en) 2000-07-20 2014-06-03 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
TW511158B (en) 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6887339B1 (en) 2000-09-20 2005-05-03 Applied Science And Technology, Inc. RF power supply with integrated matching network
WO2002071631A2 (en) 2001-03-02 2002-09-12 Tokyo Electron Limited Apparatus and method of improving impedance matching between an rf signal and a multi-segmented electrode
WO2002073794A2 (en) 2001-03-09 2002-09-19 California Institute Of Technology Switchless multi-resonant, multi-band power amplifier
US6583572B2 (en) 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7298091B2 (en) 2002-02-01 2007-11-20 The Regents Of The University Of California Matching network for RF plasma source
JP4071044B2 (ja) 2002-02-08 2008-04-02 株式会社ダイヘン インピーダンス整合器の出力端特性解析方法、およびインピーダンス整合器、ならびにインピーダンス整合器の出力端特性解析システム
US6703080B2 (en) 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
JP4080793B2 (ja) 2002-06-25 2008-04-23 ワイエイシイ株式会社 プラズマ処理装置
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
JP3641785B2 (ja) 2002-08-09 2005-04-27 株式会社京三製作所 プラズマ発生用電源装置
JP3810748B2 (ja) * 2003-02-28 2006-08-16 三菱重工業株式会社 表面処理装置および表面処理方法
KR20040084477A (ko) 2003-03-28 2004-10-06 삼성전자주식회사 플라즈마 가스를 이용하는 기판 가공 장치
US6812647B2 (en) 2003-04-03 2004-11-02 Wayne D. Cornelius Plasma generator useful for ion beam generation
US20050106873A1 (en) 2003-08-15 2005-05-19 Hoffman Daniel J. Plasma chamber having multiple RF source frequencies
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US7042311B1 (en) 2003-10-10 2006-05-09 Novellus Systems, Inc. RF delivery configuration in a plasma processing system
US7190119B2 (en) 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
CN100550273C (zh) 2003-12-18 2009-10-14 应用材料公司 双频rf匹配
US7157857B2 (en) 2003-12-19 2007-01-02 Advanced Energy Industries, Inc. Stabilizing plasma and generator interactions
US7169256B2 (en) 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
JP4606944B2 (ja) 2004-06-02 2011-01-05 東京エレクトロン株式会社 プラズマ処理装置およびインピーダンス調整方法
US7403764B2 (en) 2004-11-30 2008-07-22 Turner Terry R RF power delivery diagnostic system
JP4704088B2 (ja) 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
US7615931B2 (en) 2005-05-02 2009-11-10 International Technology Center Pulsed dielectric barrier discharge
US8179050B2 (en) 2005-06-23 2012-05-15 The Regents Of The University Of California Helicon plasma source with permanent magnets
US7518466B2 (en) 2005-08-29 2009-04-14 Applied Materials, Inc. Methods and apparatus for symmetrical and/or concentric radio frequency matching networks
US20080179948A1 (en) 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
EP1957992B1 (en) 2005-12-06 2011-05-25 Harman International Industries, Incorporated Diagnostic system for power converter
US7932721B2 (en) 2006-04-07 2011-04-26 The United States Of America As Represented By The Department Of Health And Human Services Inductive decoupling of a RF coil array
KR20070101654A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 반도체 제조 설비의 매칭 장치
KR101170597B1 (ko) * 2006-05-10 2012-08-02 주성엔지니어링(주) 진폭변조 알에프 전력을 이용한 갭필 방법 및 이를 위한갭필 장치
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
US8055203B2 (en) 2007-03-14 2011-11-08 Mks Instruments, Inc. Multipoint voltage and current probe system
JP5606312B2 (ja) 2007-07-23 2014-10-15 トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト プラズマ給電装置
US7844728B2 (en) 2007-07-31 2010-11-30 Alcatel-Lucent Usa Inc. Packet filtering/classification and/or policy control support from both visited and home networks
US7839223B2 (en) 2008-03-23 2010-11-23 Advanced Energy Industries, Inc. Method and apparatus for advanced frequency tuning
US8847561B2 (en) 2008-05-07 2014-09-30 Advanced Energy Industries, Inc. Apparatus, system, and method for controlling a matching network based on information characterizing a cable
JP2011521735A (ja) 2008-05-30 2011-07-28 コロラド ステート ユニバーシティ リサーチ ファンデーション プラズマを発生させるためのシステム、方法、および装置
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8299391B2 (en) 2008-07-30 2012-10-30 Applied Materials, Inc. Field enhanced inductively coupled plasma (Fe-ICP) reactor
US20160087687A1 (en) 2008-09-27 2016-03-24 Witricity Corporation Communication in a wireless power transmission system
GB0823565D0 (en) 2008-12-24 2009-01-28 Oxford Instr Plasma Technology Signal generating system
US20100276391A1 (en) 2009-03-05 2010-11-04 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
US9378930B2 (en) 2009-03-05 2016-06-28 Applied Materials, Inc. Inductively coupled plasma reactor having RF phase control and methods of use thereof
WO2011022612A2 (en) 2009-08-21 2011-02-24 Mattson Technology, Inc. Inductive plasma source
US9275838B2 (en) 2009-09-02 2016-03-01 Lam Research Corporation Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof
US20150255994A1 (en) 2009-09-25 2015-09-10 Witricity Corporation Safety systems for wireless energy transfer in vehicle applications
US8513889B2 (en) 2009-10-21 2013-08-20 Applied Materials, Inc. Methods and apparatus for tuning matching networks
US8755204B2 (en) 2009-10-21 2014-06-17 Lam Research Corporation RF isolation for power circuitry
US8330432B2 (en) 2009-12-22 2012-12-11 Advanced Energy Industries, Inc Efficient active source impedance modification of a power amplifier
JP5632626B2 (ja) 2010-03-04 2014-11-26 東京エレクトロン株式会社 自動整合装置及びプラズマ処理装置
US8314561B2 (en) * 2010-04-02 2012-11-20 Mks Instruments, Inc. Multi-channel radio frequency generator
KR101112741B1 (ko) 2010-04-20 2012-02-22 다이나믹솔라디자인 주식회사 다중 분할 전극 세트를 위한 급전 장치를 구비한 플라즈마 챔버
CN103081073B (zh) 2010-11-30 2015-12-02 佳能安内华股份有限公司 等离子体处理设备
JP2012175001A (ja) 2011-02-23 2012-09-10 Toshiba Corp 制御装置、プラズマ処理装置、及び制御方法
JP5781349B2 (ja) 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US9048518B2 (en) 2011-06-21 2015-06-02 Applied Materials, Inc. Transmission line RF applicator for plasma chamber
JP2013098177A (ja) 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9214718B2 (en) 2012-03-08 2015-12-15 Apple Inc. Methods for characterizing tunable radio-frequency elements
CN103533690A (zh) 2012-07-05 2014-01-22 Nxp股份有限公司 自动调整工作频率的微波功率源和方法
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US8995926B2 (en) 2012-09-27 2015-03-31 Apple Inc. Methods and apparatus for performing coexistence testing for multi-antenna electronic devices
US9082589B2 (en) 2012-10-09 2015-07-14 Novellus Systems, Inc. Hybrid impedance matching for inductively coupled plasma system
US9294100B2 (en) 2012-12-04 2016-03-22 Advanced Energy Industries, Inc. Frequency tuning system and method for finding a global optimum
JP6099995B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 試験装置
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
KR102168064B1 (ko) 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6224958B2 (ja) 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
US20150083042A1 (en) 2013-09-26 2015-03-26 Applied Materials, Inc. Rotatable substrate support having radio frequency applicator
EP2881579B1 (en) 2013-12-04 2019-03-27 NXP USA, Inc. Rf power amplification and distribution systems, plasma ignition systems, and methods of operation therefor
US9345122B2 (en) * 2014-05-02 2016-05-17 Reno Technologies, Inc. Method for controlling an RF generator
US20160065207A1 (en) 2014-01-10 2016-03-03 Reno Technologies, Inc. High voltage control circuit for an electronic switch
US10224184B2 (en) 2014-03-24 2019-03-05 Aes Global Holdings, Pte. Ltd System and method for control of high efficiency generator source impedance
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
JP6424024B2 (ja) 2014-06-24 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6323260B2 (ja) 2014-08-29 2018-05-16 株式会社島津製作所 高周波電源装置
US9854659B2 (en) 2014-10-16 2017-12-26 Advanced Energy Industries, Inc. Noise based frequency tuning and identification of plasma characteristics
WO2016132403A1 (ja) 2015-02-20 2016-08-25 Ｊｆｅスチール株式会社 高強度継目無厚肉鋼管およびその製造方法
US9596744B2 (en) 2015-03-31 2017-03-14 Lam Research Corporation Radio frequency generator having multiple mutually exclusive oscillators for use in plasma processing
US9859088B2 (en) 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
US9704692B2 (en) 2015-07-01 2017-07-11 Lam Research Corporation System for instantaneous radiofrequency power measurement and associated methods
US9954508B2 (en) 2015-10-26 2018-04-24 Lam Research Corporation Multiple-output radiofrequency matching module and associated methods
WO2017100136A1 (en) 2015-12-07 2017-06-15 Applied Materials, Inc. Method and apparatus for clamping and declamping substrates using electrostatic chucks
US9749161B1 (en) * 2016-02-23 2017-08-29 Nxp Usa, Inc. Fixed-point conjugate gradient digital pre-distortion (DPD) adaptation
US10256108B2 (en) 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
WO2017158694A1 (ja) * 2016-03-14 2017-09-21 ギガフォトン株式会社 レーザ装置及び極端紫外光生成システム
JP2017168298A (ja) * 2016-03-16 2017-09-21 東京エレクトロン株式会社 プラズマ処理装置
KR20170114800A (ko) * 2016-04-06 2017-10-16 삼성전자주식회사 전자 장치에서 신호 품질 향상 방법 및 장치
US20170314129A1 (en) 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
US9644271B1 (en) 2016-05-13 2017-05-09 Lam Research Corporation Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
DE102016109343A1 (de) 2016-05-20 2017-11-23 Christof-Herbert Diener Schaltungsanordnung zur Bereitstellung von Hochfrequenzenergie und System zur Erzeugung einer elektrischen Entladung
US10229816B2 (en) 2016-05-24 2019-03-12 Mks Instruments, Inc. Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network
US10187032B2 (en) 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10553465B2 (en) 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
US10009028B2 (en) 2016-09-30 2018-06-26 Lam Research Corporation Frequency and match tuning in one state and frequency tuning in the other state
KR101927439B1 (ko) * 2017-01-04 2018-12-10 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치
JP7108623B2 (ja) 2017-02-16 2022-07-28 アプライド マテリアルズ インコーポレイテッド 高温環境において高周波電力を測定するための電圧－電流プローブ、及び電圧－電流プローブを較正する方法
US10410836B2 (en) 2017-02-22 2019-09-10 Lam Research Corporation Systems and methods for tuning to reduce reflected power in multiple states
US10109462B2 (en) 2017-03-13 2018-10-23 Applied Materials, Inc. Dual radio-frequency tuner for process control of a plasma process
US10707058B2 (en) 2017-04-11 2020-07-07 Applied Materials, Inc. Symmetric and irregular shaped plasmas using modular microwave sources
US20180308664A1 (en) 2017-04-24 2018-10-25 Kenneth S. Collins Plasma reactor with filaments and rf power applied at multiple frequencies
US20180308663A1 (en) 2017-04-24 2018-10-25 Kenneth S. Collins Plasma reactor with phase shift applied across electrode array
CN109148250B (zh) 2017-06-15 2020-07-17 北京北方华创微电子装备有限公司 阻抗匹配装置和阻抗匹配方法
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
CN107390147B (zh) * 2017-08-09 2020-05-15 上海联影医疗科技有限公司 一种局部线圈的调失谐系统的故障诊断电路及方法
TWI788390B (zh) 2017-08-10 2023-01-01 美商應用材料股份有限公司 用於電漿處理的分佈式電極陣列
US10536130B2 (en) 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
JP7209483B2 (ja) 2017-10-10 2023-01-20 東京エレクトロン株式会社 プラズマ処理装置および測定回路
US10903049B2 (en) 2017-10-10 2021-01-26 Tokyo Electron Limited Plasma processing apparatus and measurement circuit
US10264663B1 (en) 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
KR101999692B1 (ko) 2017-10-27 2019-07-12 광운대학교 산학협력단 플라즈마 모니터링이 가능한 플라즈마 발생 장치 및 플라즈마 모니터링 방법
US10510512B2 (en) 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
US10269540B1 (en) 2018-01-25 2019-04-23 Advanced Energy Industries, Inc. Impedance matching system and method of operating the same
JP6914211B2 (ja) 2018-01-30 2021-08-04 株式会社日立ハイテク プラズマ処理装置及び状態予測装置
US12051630B2 (en) 2018-02-23 2024-07-30 Lam Research Corporation RF current measurement in semiconductor processing tool
US10432248B1 (en) 2018-03-15 2019-10-01 Lam Research Corporation RF metrology system for a substrate processing apparatus incorporating RF sensors with corresponding lock-in amplifiers
JP7175239B2 (ja) 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US11042140B2 (en) 2018-06-26 2021-06-22 Mks Instruments, Inc. Adaptive control for a power generator
KR102190794B1 (ko) 2018-07-02 2020-12-15 주식회사 기가레인 기계적으로 플라즈마 밀도를 제어하는 기판 처리 장치
US10304663B1 (en) * 2018-07-19 2019-05-28 Lam Research Corporation RF generator for generating a modulated frequency or an inter-modulated frequency
WO2020023874A1 (en) 2018-07-26 2020-01-30 Lam Research Corporation Compact high density plasma source
US10354838B1 (en) 2018-10-10 2019-07-16 Lam Research Corporation RF antenna producing a uniform near-field Poynting vector
US11360190B2 (en) * 2019-04-20 2022-06-14 The United States Of America, As Represented By The Secretary Of The Navy Hardware in the loop simulation and test system that includes a phased array antenna simulation system providing dynamic range and angle of arrival signals simulation for input into a device under test (DUT) that includes a phased array signal processing system along with related methods
KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
JP7634528B2 (ja) 2019-10-01 2025-02-21 ラム リサーチ コーポレーション 変圧器および／または変圧器結合コンバイナを含む無線周波数分配回路
KR20220088474A (ko) 2019-10-25 2022-06-27 램 리써치 코포레이션 멀티 스테이션 집적 회로 제조 챔버에서 rf (radio frequency) 전력 임밸런싱 (imbalancing)
WO2021113387A1 (en) 2019-12-02 2021-06-10 Lam Research Corporation Impedance transformation in radio-frequency-assisted plasma generation
WO2021163043A1 (en) 2020-02-10 2021-08-19 Lam Research Corporation Decoupling radiofrequency (rf) signals from input signal conductors of a process chamber
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
US20240203711A1 (en) 2020-03-27 2024-06-20 Lam Research Corporation Rf signal parameter measurement in an integrated circuit fabrication chamber
KR20230003252A (ko) 2020-05-04 2023-01-05 램 리써치 코포레이션 리셉터클 내 플라즈마 균일성 증가
KR20230021739A (ko) 2020-06-12 2023-02-14 램 리써치 코포레이션 Rf 커플링 구조체들에 의한 플라즈마 형성의 제어
JP7544594B2 (ja) 2020-12-25 2024-09-03 株式会社ダイヘン 高周波電源システム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150348854A1 (en) * 2014-06-03 2015-12-03 Lam Research Corporation Multi-station plasma reactor with rf balancing

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