JP7566873B2 - 複数の出力ポートを有する無線周波数電力発生器 - Google Patents

複数の出力ポートを有する無線周波数電力発生器 Download PDF

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JP7566873B2
JP7566873B2 JP2022506171A JP2022506171A JP7566873B2 JP 7566873 B2 JP7566873 B2 JP 7566873B2 JP 2022506171 A JP2022506171 A JP 2022506171A JP 2022506171 A JP2022506171 A JP 2022506171A JP 7566873 B2 JP7566873 B2 JP 7566873B2
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station
power
mhz
signal
integrated circuit
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JP2022542397A (ja
JP2022542397A5 (https=
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カプール・サニル
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2022506171A 2019-07-31 2020-07-30 複数の出力ポートを有する無線周波数電力発生器 Active JP7566873B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024172857A JP7815379B2 (ja) 2019-07-31 2024-10-02 複数の出力ポートを有する無線周波数電力発生器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962880822P 2019-07-31 2019-07-31
US62/880,822 2019-07-31
PCT/US2020/070333 WO2021022303A1 (en) 2019-07-31 2020-07-30 Radio frequency power generator having multiple output ports

Related Child Applications (1)

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JP2022542397A JP2022542397A (ja) 2022-10-03
JP2022542397A5 JP2022542397A5 (https=) 2024-08-06
JP7566873B2 true JP7566873B2 (ja) 2024-10-15

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JP2022506171A Active JP7566873B2 (ja) 2019-07-31 2020-07-30 複数の出力ポートを有する無線周波数電力発生器
JP2024172857A Active JP7815379B2 (ja) 2019-07-31 2024-10-02 複数の出力ポートを有する無線周波数電力発生器

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US (2) US12205796B2 (https=)
JP (2) JP7566873B2 (https=)
KR (1) KR102882813B1 (https=)
CN (2) CN118866641A (https=)
TW (2) TWI892993B (https=)
WO (1) WO2021022303A1 (https=)

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KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
JP7612665B2 (ja) * 2019-08-19 2025-01-14 アプライド マテリアルズ インコーポレイテッド 複数の周波数においてｒｆパラメータを制御する方法および装置
JP2021038452A (ja) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
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JP7590079B2 (ja) * 2021-02-05 2024-11-26 東京エレクトロン株式会社 基板処理装置、基板処理システム及び異常検知方法
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US20250385074A1 (en) * 2024-06-18 2025-12-18 Applied Materials, Inc. Radio frequency matching network

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