TWI890405B - 碳化矽基板及碳化矽磊晶晶圓 - Google Patents

碳化矽基板及碳化矽磊晶晶圓

Info

Publication number
TWI890405B
TWI890405B TW113113664A TW113113664A TWI890405B TW I890405 B TWI890405 B TW I890405B TW 113113664 A TW113113664 A TW 113113664A TW 113113664 A TW113113664 A TW 113113664A TW I890405 B TWI890405 B TW I890405B
Authority
TW
Taiwan
Prior art keywords
sic
point
sic substrate
tensile stress
circumferential direction
Prior art date
Application number
TW113113664A
Other languages
English (en)
Chinese (zh)
Other versions
TW202430735A (zh
Inventor
周防裕政
金田一麟平
山下任
Original Assignee
日商力森諾科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商力森諾科股份有限公司 filed Critical 日商力森諾科股份有限公司
Publication of TW202430735A publication Critical patent/TW202430735A/zh
Application granted granted Critical
Publication of TWI890405B publication Critical patent/TWI890405B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
TW113113664A 2022-05-31 2023-05-29 碳化矽基板及碳化矽磊晶晶圓 TWI890405B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022089089A JP7268784B1 (ja) 2022-05-31 2022-05-31 ＳｉＣ基板及びＳｉＣエピタキシャルウェハ
JP2022-089089 2022-05-31

Publications (2)

Publication Number Publication Date
TW202430735A TW202430735A (zh) 2024-08-01
TWI890405B true TWI890405B (zh) 2025-07-11

Family

ID=86281597

Family Applications (3)

Application Number Title Priority Date Filing Date
TW112119920A TWI842545B (zh) 2022-05-31 2023-05-29 碳化矽基板及碳化矽磊晶晶圓
TW114120677A TW202536261A (zh) 2022-05-31 2023-05-29 碳化矽基板及碳化矽磊晶晶圓
TW113113664A TWI890405B (zh) 2022-05-31 2023-05-29 碳化矽基板及碳化矽磊晶晶圓

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW112119920A TWI842545B (zh) 2022-05-31 2023-05-29 碳化矽基板及碳化矽磊晶晶圓
TW114120677A TW202536261A (zh) 2022-05-31 2023-05-29 碳化矽基板及碳化矽磊晶晶圓

Country Status (6)

Country Link
US (3) US11866846B2 (enExample)
EP (2) EP4286567A1 (enExample)
JP (3) JP7268784B1 (enExample)
KR (2) KR102610099B1 (enExample)
CN (1) CN117144472A (enExample)
TW (3) TWI842545B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7268784B1 (ja) 2022-05-31 2023-05-08 株式会社レゾナック ＳｉＣ基板及びＳｉＣエピタキシャルウェハ
CN119265695B (zh) * 2023-07-07 2025-08-29 上海天岳半导体材料有限公司 一种应力呈阶梯分布的碳化硅衬底

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108463581A (zh) * 2016-02-15 2018-08-28 住友电气工业株式会社 碳化硅外延基板和制造碳化硅半导体装置的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954596B2 (ja) 2006-04-21 2012-06-20 新日本製鐵株式会社 炭化珪素単結晶インゴットの製造方法
JP5392169B2 (ja) * 2010-04-07 2014-01-22 株式会社デンソー 炭化珪素単結晶の製造方法
CN102543718A (zh) * 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP5746013B2 (ja) 2011-12-28 2015-07-08 株式会社豊田中央研究所 単結晶製造装置、及び単結晶の製造方法
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP6136731B2 (ja) * 2013-08-06 2017-05-31 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
JP5944873B2 (ja) * 2013-09-20 2016-07-05 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法
WO2015181971A1 (ja) * 2014-05-30 2015-12-03 新日鉄住金マテリアルズ株式会社 バルク状炭化珪素単結晶の評価方法、及びその方法に用いられる参照用炭化珪素単結晶
JP6579889B2 (ja) 2015-09-29 2019-09-25 昭和電工株式会社 炭化珪素単結晶基板の製造方法
JPWO2017057742A1 (ja) * 2015-10-02 2018-07-19 昭和電工株式会社 ＳｉＣ単結晶インゴット
WO2019111507A1 (ja) 2017-12-08 2019-06-13 住友電気工業株式会社 炭化珪素基板
JP6960866B2 (ja) * 2018-01-24 2021-11-05 昭和電工株式会社 単結晶４Ｈ−ＳｉＣ成長用種結晶及びその加工方法
CN111788339B (zh) * 2018-03-01 2022-08-09 住友电气工业株式会社 碳化硅基板
JP7298915B2 (ja) 2018-10-16 2023-06-27 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 単結晶炭化ケイ素基板の製造方法
JP7400451B2 (ja) 2019-12-25 2023-12-19 株式会社レゾナック ＳｉＣ単結晶の製造方法
US12054850B2 (en) * 2019-12-27 2024-08-06 Wolfspeed, Inc. Large diameter silicon carbide wafers
CN113046825B (zh) * 2019-12-27 2022-04-12 北京天科合达半导体股份有限公司 一种高质量SiC单晶片及其制备方法
CN113604883B (zh) * 2021-08-09 2023-05-09 北京天科合达半导体股份有限公司 一种高结晶质量碳化硅单晶片及其制备方法
JP7268784B1 (ja) * 2022-05-31 2023-05-08 株式会社レゾナック ＳｉＣ基板及びＳｉＣエピタキシャルウェハ
JP7132454B1 (ja) * 2022-05-31 2022-09-06 昭和電工株式会社 ＳｉＣ基板及びＳｉＣエピタキシャルウェハ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108463581A (zh) * 2016-02-15 2018-08-28 住友电气工业株式会社 碳化硅外延基板和制造碳化硅半导体装置的方法

Also Published As

Publication number Publication date
JP7548364B2 (ja) 2024-09-10
KR20250113960A (ko) 2025-07-28
TW202536261A (zh) 2025-09-16
EP4512943A3 (en) 2025-10-01
JP2023177253A (ja) 2023-12-13
JP2024156000A (ja) 2024-10-31
EP4286567A1 (en) 2023-12-06
KR102610099B1 (ko) 2023-12-05
EP4512943A2 (en) 2025-02-26
JP7268784B1 (ja) 2023-05-08
US20230383438A1 (en) 2023-11-30
US12215439B2 (en) 2025-02-04
JP2023176670A (ja) 2023-12-13
US11866846B2 (en) 2024-01-09
CN117144472A (zh) 2023-12-01
TW202430735A (zh) 2024-08-01
US20250116033A1 (en) 2025-04-10
TW202348848A (zh) 2023-12-16
US20240093406A1 (en) 2024-03-21
TWI842545B (zh) 2024-05-11

Similar Documents

Publication Publication Date Title
JP5304713B2 (ja) 炭化珪素単結晶基板、炭化珪素エピタキシャルウェハ、及び薄膜エピタキシャルウェハ
TWI890405B (zh) 碳化矽基板及碳化矽磊晶晶圓
WO2012160872A1 (ja) 炭化珪素基板、炭化珪素インゴットおよびそれらの製造方法
JP2009147105A (ja) エピタキシャル成長方法
US20250015139A1 (en) SiC SUBSTRATE AND SiC EPITAXIAL WAFER
JP7216244B1 (ja) 半導体デバイスの製造方法
JP4937967B2 (ja) 炭化珪素エピタキシャルウェハの製造方法
KR102834709B1 (ko) SiC 에피택셜 웨이퍼
TWI866241B (zh) 碳化矽基板及碳化矽磊晶晶圓
JP2023113512A (ja) エピタキシャルウェーハの製造方法