TWI883180B - 基板處理裝置及溫度控制方法 - Google Patents

基板處理裝置及溫度控制方法 Download PDF

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Publication number
TWI883180B
TWI883180B TW110114121A TW110114121A TWI883180B TW I883180 B TWI883180 B TW I883180B TW 110114121 A TW110114121 A TW 110114121A TW 110114121 A TW110114121 A TW 110114121A TW I883180 B TWI883180 B TW I883180B
Authority
TW
Taiwan
Prior art keywords
plate
temperature
temperature control
control mechanism
substrate processing
Prior art date
Application number
TW110114121A
Other languages
English (en)
Chinese (zh)
Other versions
TW202147504A (zh
Inventor
斉藤秀翔
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202147504A publication Critical patent/TW202147504A/zh
Application granted granted Critical
Publication of TWI883180B publication Critical patent/TWI883180B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110114121A 2020-05-01 2021-04-20 基板處理裝置及溫度控制方法 TWI883180B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020081397A JP7301021B2 (ja) 2020-05-01 2020-05-01 基板処理装置、載置台及び温度制御方法
JP2020-081397 2020-05-01

Publications (2)

Publication Number Publication Date
TW202147504A TW202147504A (zh) 2021-12-16
TWI883180B true TWI883180B (zh) 2025-05-11

Family

ID=78243081

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110114121A TWI883180B (zh) 2020-05-01 2021-04-20 基板處理裝置及溫度控制方法
TW114113766A TW202531473A (zh) 2020-05-01 2021-04-20 基板處理裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW114113766A TW202531473A (zh) 2020-05-01 2021-04-20 基板處理裝置

Country Status (5)

Country Link
US (1) US11626818B2 (OSRAM)
JP (2) JP7301021B2 (OSRAM)
KR (1) KR20210134503A (OSRAM)
CN (1) CN113594016A (OSRAM)
TW (2) TWI883180B (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12564010B2 (en) * 2021-11-23 2026-02-24 Intel NDTM US LLC Chuck with non-flat shaped surface
US11994807B2 (en) * 2022-05-03 2024-05-28 Tokyo Electron Limited In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
KR102705998B1 (ko) * 2023-09-05 2024-09-11 주식회사 동탄이엔지 온도 제어가 가능한 정전척 및 이를 이용한 정전척의 온도 제어 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201523770A (zh) * 2013-10-22 2015-06-16 東京威力科創股份有限公司 電漿處理裝置、供電單元以及載置台系統

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JPH06302550A (ja) * 1993-04-13 1994-10-28 Hitachi Ltd 半導体製造装置
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
JP2000021962A (ja) 1998-07-03 2000-01-21 Hitachi Ltd 静電吸着装置
JP2000124299A (ja) 1998-10-16 2000-04-28 Hitachi Ltd 半導体装置の製造方法および半導体製造装置
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003224180A (ja) * 2002-01-28 2003-08-08 Kyocera Corp ウエハ支持部材
JP2005072286A (ja) 2003-08-25 2005-03-17 Kyocera Corp 静電チャック
JP2006237348A (ja) * 2005-02-25 2006-09-07 Ulvac Japan Ltd 静電チャック及びこれを備えた真空処理装置
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
DE102005049598B4 (de) * 2005-10-17 2017-10-19 Att Advanced Temperature Test Systems Gmbh Hybrid Chuck
JP2007317772A (ja) 2006-05-24 2007-12-06 Shinko Electric Ind Co Ltd 静電チャック装置
JP2009218536A (ja) 2008-03-13 2009-09-24 Seiko Epson Corp 基板加熱装置および電気光学装置の製造装置
JP5207996B2 (ja) * 2009-01-20 2013-06-12 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP2010182866A (ja) 2009-02-05 2010-08-19 Nikon Corp 静電吸着保持装置、露光装置、露光方法及びデバイスの製造方法
JP5357561B2 (ja) 2009-02-13 2013-12-04 信越化学工業株式会社 表面の研磨代が均一な半導体ウェーハの製造方法
JP5434636B2 (ja) 2010-01-29 2014-03-05 住友電気工業株式会社 静電チャックを備えた基板保持体
JP5496791B2 (ja) * 2010-06-29 2014-05-21 シャープ株式会社 プラズマ処理装置
JP6196095B2 (ja) * 2013-08-07 2017-09-13 日本特殊陶業株式会社 静電チャック
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JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6584289B2 (ja) * 2015-11-04 2019-10-02 東京エレクトロン株式会社 基板載置台および基板処理装置
KR102644272B1 (ko) 2016-10-31 2024-03-06 삼성전자주식회사 정전척 어셈블리
JP7090465B2 (ja) 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Patent Citations (1)

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Also Published As

Publication number Publication date
US20210344288A1 (en) 2021-11-04
US11626818B2 (en) 2023-04-11
CN113594016A (zh) 2021-11-02
TW202147504A (zh) 2021-12-16
JP2023118762A (ja) 2023-08-25
JP7613816B2 (ja) 2025-01-15
KR20210134503A (ko) 2021-11-10
TW202531473A (zh) 2025-08-01
JP7301021B2 (ja) 2023-06-30
JP2021176172A (ja) 2021-11-04

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