JP6584289B2 - 基板載置台および基板処理装置 - Google Patents
基板載置台および基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 167
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229920002379 silicone rubber Polymers 0.000 claims description 8
- 239000004945 silicone rubber Substances 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 description 12
- 229920001973 fluoroelastomer Polymers 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000002826 coolant Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002500 effect on skin Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Description
まず、第1の実施形態について説明する。
図1は、本発明の第1の実施形態に係る基板載置台を用いた基板処理装置の一例であるプラズマエッチング装置を示す断面図である。
基板載置台4は、絶縁部材5の上に設けられた、ベースとなる第1部材6と、第1部材6の上に設けられた第2部材7と、第2部材7の表面に設けられた基板載置部である静電チャック8と、第1部材6、第2部材7、および静電チャック8の側壁を覆う側壁絶縁部材9とを有している。第1部材6、第2部材7および静電チャック8は基板Gの形状に対応した矩形状をなし、基板載置台4の全体が四角板状または柱状に形成されている。第1部材6および第2部材7はいずれも金属製であり、これらは異種の金属からなっている。例えば第1部材6はアルミニウムからなり、第2部材7はステンレス鋼からなる。第1部材6と第2部材7との間には、弾性体シート30が介装されており、第1部材6と第2部材7とは外周が締結部材としての複数の外周ネジ31により締結されている。
まず、排気装置20によってチャンバー2内を排気して所定の圧力とし、ゲートバルブ22を開放して搬入出口21から図示しない搬送手段によって基板Gを搬入し、図示しないリフタピンを上昇させた状態でその上に基板Gを受け取り、リフタピンを下降させることにより基板載置台4上に基板Gを載置させる。搬送手段をチャンバー2から退避させた後、ゲートバルブ22を閉じる。
次に、第2の実施形態について説明する。
図6は、本発明の第1の実施形態に係る基板載置台を示す断面図である。本実施形態では、大型基板を載置するための基板載置台の例であり、第1部材6および第2部材7の間は、締結部材として、外周ネジ31の他、内側部分に第1部材6の裏面側からの内側ネジ41を有しており、第1部材6および第2部材7は、外周ネジ31と内側ネジ41で締結されている。
なお、本発明は上記実施形態に限定されることなく本発明の思想の範囲内で種々変形可能である。例えば、上記実施形態では、本発明の基板載置台を平行平板型プラズマエッチング装置の下部電極として機能する基板載置台に適用した例について説明したが、これに限らず、誘導結合型等の他のプラズマ生成手段を用いたプラズマエッチング装置の基板載置台に適用してもよく、またプラズマエッチングに限らず、プラズマアッシング、プラズマCVD等の他のプラズマ処理装置の基板載置台に適用可能である。さらに、本発明は、プラズマ処理装置に限らず、基板を基板載置台に載置して処理する基板処理装置全般に適用可能である。
2;チャンバー(処理容器)
4;基板載置台
5;絶縁部材
6;第1部材
7;第2部材
8;静電チャック
9;側壁絶縁部材
11;シャワーヘッド
15:処理ガス供給管
18:処理ガス供給源
19:排気管
20:排気装置
21;搬入出口
25;高周波電源
30,30′;弾性体シート
31;外側ネジ
32;冷媒流路
33;チラー
37;直流電源
40;制御部
41;内側ネジ
G;基板
Claims (11)
- 処理容器内で被処理基板に処理を施す基板処理装置において基板を載置する基板載置台であって、
ベースとなる金属製の第1部材と、
前記第1部材の上に設けられた金属製の第2部材と、
前記第2部材の表面に設けられた、基板を載置する基板載置部と、
前記第1部材に設けられた温調手段と、
前記第1部材および前記第2部材の間に介在され、有機材料からなる弾性体で構成された弾性体シートと、
前記弾性体シートが介在された状態で前記第1部材および前記第2部材の少なくとも外周を締結する締結部材と
を有し、
前記弾性体シートは、前記締結部材により前記第1部材および前記第2部材が締結された際に、前記第1部材および前記第2部材の間に形成される微小隙間を埋め、
前記基板は矩形状をなし、前記第1部材、前記第2部材、および前記弾性体シートは、基板に対応した矩形状をなし、
前記第1部材および前記第2部材の長辺に対する前記弾性体シートの長辺の比率、および前記第1部材および前記第2部材の短辺に対する前記弾性体シートの短辺の比率は、いずれも0より大きく、1より小さいことを特徴とする基板載置台。 - 前記第1部材および前記第2部材は、異種の金属で構成されていることを特徴とする請求項1に記載の基板載置台。
- 前記第1部材に接続された、高周波電力を供給するための高周波電源をさらに有することを特徴とする請求項1または請求項2に記載の基板載置台。
- 前記温調手段は、前記第1部材の内部に設けられた温調媒体流路と、温調媒体流路に温調媒体を供給する温調媒体供給部を有することを特徴とする請求項1から請求項3のいずれか1項に記載の基板載置台。
- 前記基板載置部は、基板を静電吸着するための静電チャックを有することを特徴とする請求項1から請求項4のいずれか1項に記載の基板載置台。
- 前記弾性体シートは、ヤング率が1〜40MPaであることを特徴とする請求項1から請求項5のいずれか1項に記載の基板載置台。
- 前記弾性体シートを構成する材料が、シリコーンゴムまたはフッ素ゴムであることを特徴とする請求項6に記載の基板載置台。
- 前記第1部材および前記第2部材の長辺に対する前記弾性体シートの長辺の比率、および前記第1部材および前記第2部材の短辺に対する前記弾性体シートの短辺の比率は、いずれも0.3以上、0.9以下であることを特徴とする請求項1から請求項7のいずれか1項に記載の基板載置台。
- 前記弾性体シートは、初期の厚さをt0とし、前記第1部材および前記第2部材に介在されて潰した厚さをt1とした場合に、t1/t0×100(%)で表される潰し量が50〜70%であることを特徴とする請求項1から請求項8のいずれか1項に記載の基板載置台。
- 前記第1部材および前記第2部材は、これらの外周部および内側部分が締結部材により締結され、これら締結部材により締結された際に形成された複数の微小隙間にそれぞれ前記弾性体シートを介在させることを特徴とする請求項1から請求項9のいずれか1項に記載の基板載置台。
- 被処理基板に対して処理を施すための処理容器と、
前記処理容器内で基板を載置する請求項1から請求項10のいずれかに記載された基板載置台と、
前記処理容器内に処理ガスを供給する処理ガス供給機構と、
前記処理ガス供給機構から供給された前記処理ガスを前記処理容器内に導入する処理ガス導入部と、
前記処理容器内を排気する排気機構と
を具備することを特徴とする基板処理装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2015216551A JP6584289B2 (ja) | 2015-11-04 | 2015-11-04 | 基板載置台および基板処理装置 |
TW105134301A TWI705495B (zh) | 2015-11-04 | 2016-10-24 | 基板載置台及基板處理裝置 |
KR1020160144410A KR101928626B1 (ko) | 2015-11-04 | 2016-11-01 | 기판 탑재대 및 기판 처리 장치 |
CN201610963595.XA CN107026102B (zh) | 2015-11-04 | 2016-11-04 | 基板载置台和基板处理装置 |
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JP2017092104A5 JP2017092104A5 (ja) | 2018-10-18 |
JP6584289B2 true JP6584289B2 (ja) | 2019-10-02 |
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