TWI872068B - 攝像元件及攝像裝置 - Google Patents

攝像元件及攝像裝置 Download PDF

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Publication number
TWI872068B
TWI872068B TW109114805A TW109114805A TWI872068B TW I872068 B TWI872068 B TW I872068B TW 109114805 A TW109114805 A TW 109114805A TW 109114805 A TW109114805 A TW 109114805A TW I872068 B TWI872068 B TW I872068B
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TW
Taiwan
Prior art keywords
photoelectric conversion
imaging element
semiconductor substrate
gate
light
Prior art date
Application number
TW109114805A
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English (en)
Chinese (zh)
Other versions
TW202101743A (zh
Inventor
国武幸史
納土晉一郎
正垣敦
Original Assignee
日商索尼半導體解決方案公司
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Publication of TW202101743A publication Critical patent/TW202101743A/zh
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Publication of TWI872068B publication Critical patent/TWI872068B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
TW109114805A 2019-06-07 2020-05-04 攝像元件及攝像裝置 TWI872068B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-106639 2019-06-07
JP2019106639 2019-06-07

Publications (2)

Publication Number Publication Date
TW202101743A TW202101743A (zh) 2021-01-01
TWI872068B true TWI872068B (zh) 2025-02-11

Family

ID=73653175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109114805A TWI872068B (zh) 2019-06-07 2020-05-04 攝像元件及攝像裝置

Country Status (6)

Country Link
US (1) US20220246666A1 (https=)
EP (1) EP3982411A4 (https=)
JP (1) JPWO2020246133A1 (https=)
CN (1) CN113811999B9 (https=)
TW (1) TWI872068B (https=)
WO (1) WO2020246133A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3100926A1 (fr) * 2019-09-18 2021-03-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'images réalisé en technologie 3D séquentielle
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置
WO2023105929A1 (ja) * 2021-12-10 2023-06-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2023112465A1 (ja) * 2021-12-13 2023-06-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器
WO2023119840A1 (ja) * 2021-12-20 2023-06-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器
TWI799057B (zh) * 2022-01-04 2023-04-11 力晶積成電子製造股份有限公司 影像感測器積體晶片及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130069130A1 (en) * 2011-09-20 2013-03-21 Kazunori Kakehi Solid state imaging device
US20170229503A1 (en) * 2014-10-20 2017-08-10 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device
TW201921710A (zh) * 2017-09-20 2019-06-01 日商索尼股份有限公司 光電轉換元件及攝像裝置

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JP3474589B2 (ja) * 1992-04-17 2003-12-08 株式会社デンソー 相補型ｍｉｓトランジスタ装置
JP4449298B2 (ja) * 2002-03-06 2010-04-14 ソニー株式会社 固体撮像素子の製造方法および固体撮像素子
KR100870821B1 (ko) * 2007-06-29 2008-11-27 매그나칩 반도체 유한회사 후면 조사 이미지 센서
JP2009129931A (ja) * 2007-11-19 2009-06-11 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP2009238985A (ja) * 2008-03-27 2009-10-15 Kyushu Institute Of Technology 半導体撮像素子およびその製造方法
JP2010118412A (ja) * 2008-11-11 2010-05-27 Panasonic Corp 固体撮像装置及びその製造方法
JP5659707B2 (ja) * 2010-11-08 2015-01-28 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5794068B2 (ja) * 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP6161258B2 (ja) * 2012-11-12 2017-07-12 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP2015082510A (ja) * 2013-10-21 2015-04-27 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2018186211A (ja) * 2017-04-27 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102776683B1 (ko) * 2017-10-03 2025-03-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 전자 기기
WO2019093149A1 (ja) * 2017-11-09 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130069130A1 (en) * 2011-09-20 2013-03-21 Kazunori Kakehi Solid state imaging device
US20170229503A1 (en) * 2014-10-20 2017-08-10 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device
TW201921710A (zh) * 2017-09-20 2019-06-01 日商索尼股份有限公司 光電轉換元件及攝像裝置

Also Published As

Publication number Publication date
CN113811999B (zh) 2025-08-19
EP3982411A1 (en) 2022-04-13
TW202101743A (zh) 2021-01-01
CN113811999B9 (zh) 2025-10-14
JPWO2020246133A1 (https=) 2020-12-10
CN113811999A (zh) 2021-12-17
US20220246666A1 (en) 2022-08-04
EP3982411A4 (en) 2022-08-17
WO2020246133A1 (ja) 2020-12-10

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