JPWO2020246133A1 - - Google Patents
Info
- Publication number
- JPWO2020246133A1 JPWO2020246133A1 JP2021524684A JP2021524684A JPWO2020246133A1 JP WO2020246133 A1 JPWO2020246133 A1 JP WO2020246133A1 JP 2021524684 A JP2021524684 A JP 2021524684A JP 2021524684 A JP2021524684 A JP 2021524684A JP WO2020246133 A1 JPWO2020246133 A1 JP WO2020246133A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019106639 | 2019-06-07 | ||
PCT/JP2020/015949 WO2020246133A1 (ja) | 2019-06-07 | 2020-04-09 | 撮像素子および撮像装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2020246133A1 true JPWO2020246133A1 (ja) | 2020-12-10 |
Family
ID=73653175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021524684A Pending JPWO2020246133A1 (ja) | 2019-06-07 | 2020-04-09 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220246666A1 (ja) |
EP (1) | EP3982411A4 (ja) |
JP (1) | JPWO2020246133A1 (ja) |
CN (1) | CN113811999A (ja) |
TW (1) | TW202101743A (ja) |
WO (1) | WO2020246133A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3100926A1 (fr) * | 2019-09-18 | 2021-03-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images réalisé en technologie 3D séquentielle |
WO2023119840A1 (ja) * | 2021-12-20 | 2023-06-29 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、撮像素子の製造方法、電子機器 |
TWI799057B (zh) * | 2022-01-04 | 2023-04-11 | 力晶積成電子製造股份有限公司 | 影像感測器積體晶片及其形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3474589B2 (ja) * | 1992-04-17 | 2003-12-08 | 株式会社デンソー | 相補型misトランジスタ装置 |
KR100870821B1 (ko) * | 2007-06-29 | 2008-11-27 | 매그나칩 반도체 유한회사 | 후면 조사 이미지 센서 |
JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
JP2013069718A (ja) * | 2011-09-20 | 2013-04-18 | Toshiba Corp | 固体撮像装置 |
JP6161258B2 (ja) * | 2012-11-12 | 2017-07-12 | キヤノン株式会社 | 固体撮像装置およびその製造方法ならびにカメラ |
JP2016082133A (ja) * | 2014-10-20 | 2016-05-16 | ソニー株式会社 | 固体撮像素子及び電子機器 |
JP2018186211A (ja) * | 2017-04-27 | 2018-11-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN111183522B (zh) * | 2017-10-03 | 2023-11-17 | 索尼半导体解决方案公司 | 固态摄像元件、固态摄像元件的制造方法以及电子设备 |
-
2020
- 2020-04-09 JP JP2021524684A patent/JPWO2020246133A1/ja active Pending
- 2020-04-09 US US17/615,140 patent/US20220246666A1/en active Pending
- 2020-04-09 CN CN202080033705.7A patent/CN113811999A/zh active Pending
- 2020-04-09 EP EP20818825.0A patent/EP3982411A4/en active Pending
- 2020-04-09 WO PCT/JP2020/015949 patent/WO2020246133A1/ja active Application Filing
- 2020-05-04 TW TW109114805A patent/TW202101743A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20220246666A1 (en) | 2022-08-04 |
EP3982411A4 (en) | 2022-08-17 |
EP3982411A1 (en) | 2022-04-13 |
TW202101743A (zh) | 2021-01-01 |
WO2020246133A1 (ja) | 2020-12-10 |
CN113811999A (zh) | 2021-12-17 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230328 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240528 |