JPWO2020246133A1 - - Google Patents
Info
- Publication number
- JPWO2020246133A1 JPWO2020246133A1 JP2021524684A JP2021524684A JPWO2020246133A1 JP WO2020246133 A1 JPWO2020246133 A1 JP WO2020246133A1 JP 2021524684 A JP2021524684 A JP 2021524684A JP 2021524684 A JP2021524684 A JP 2021524684A JP WO2020246133 A1 JPWO2020246133 A1 JP WO2020246133A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
- H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019106639 | 2019-06-07 | ||
| PCT/JP2020/015949 WO2020246133A1 (ja) | 2019-06-07 | 2020-04-09 | 撮像素子および撮像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2020246133A1 true JPWO2020246133A1 (https=) | 2020-12-10 |
Family
ID=73653175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524684A Ceased JPWO2020246133A1 (https=) | 2019-06-07 | 2020-04-09 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20220246666A1 (https=) |
| EP (1) | EP3982411A4 (https=) |
| JP (1) | JPWO2020246133A1 (https=) |
| CN (1) | CN113811999B9 (https=) |
| TW (1) | TWI872068B (https=) |
| WO (1) | WO2020246133A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3100926A1 (fr) * | 2019-09-18 | 2021-03-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images réalisé en technologie 3D séquentielle |
| JP7624825B2 (ja) * | 2020-11-27 | 2025-01-31 | シャープセミコンダクターイノベーション株式会社 | 固体撮像装置 |
| WO2023105929A1 (ja) * | 2021-12-10 | 2023-06-15 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| WO2023112465A1 (ja) * | 2021-12-13 | 2023-06-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子及び電子機器 |
| WO2023119840A1 (ja) * | 2021-12-20 | 2023-06-29 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、撮像素子の製造方法、電子機器 |
| TWI799057B (zh) * | 2022-01-04 | 2023-04-11 | 力晶積成電子製造股份有限公司 | 影像感測器積體晶片及其形成方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299594A (ja) * | 1992-04-17 | 1993-11-12 | Nippondenso Co Ltd | 相補型ｍｉｓトランジスタ装置 |
| JP2009016826A (ja) * | 2007-06-29 | 2009-01-22 | Magnachip Semiconductor Ltd | 裏面照射イメージセンサ |
| JP2013065688A (ja) * | 2011-09-16 | 2013-04-11 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP2013069718A (ja) * | 2011-09-20 | 2013-04-18 | Toshiba Corp | 固体撮像装置 |
| JP2014096540A (ja) * | 2012-11-12 | 2014-05-22 | Canon Inc | 固体撮像装置およびその製造方法ならびにカメラ |
| WO2019093149A1 (ja) * | 2017-11-09 | 2019-05-16 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449298B2 (ja) * | 2002-03-06 | 2010-04-14 | ソニー株式会社 | 固体撮像素子の製造方法および固体撮像素子 |
| JP2009129931A (ja) * | 2007-11-19 | 2009-06-11 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| JP2009238985A (ja) * | 2008-03-27 | 2009-10-15 | Kyushu Institute Of Technology | 半導体撮像素子およびその製造方法 |
| JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP5659707B2 (ja) * | 2010-11-08 | 2015-01-28 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP2015082510A (ja) * | 2013-10-21 | 2015-04-27 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP2016082133A (ja) * | 2014-10-20 | 2016-05-16 | ソニー株式会社 | 固体撮像素子及び電子機器 |
| JP2018186211A (ja) * | 2017-04-27 | 2018-11-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN117177592A (zh) * | 2017-09-20 | 2023-12-05 | 索尼公司 | 光电转换器件和成像装置 |
| KR102776683B1 (ko) * | 2017-10-03 | 2025-03-07 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 전자 기기 |
-
2020
- 2020-04-09 JP JP2021524684A patent/JPWO2020246133A1/ja not_active Ceased
- 2020-04-09 EP EP20818825.0A patent/EP3982411A4/en not_active Withdrawn
- 2020-04-09 CN CN202080033705.7A patent/CN113811999B9/zh active Active
- 2020-04-09 WO PCT/JP2020/015949 patent/WO2020246133A1/ja not_active Ceased
- 2020-04-09 US US17/615,140 patent/US20220246666A1/en not_active Abandoned
- 2020-05-04 TW TW109114805A patent/TWI872068B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299594A (ja) * | 1992-04-17 | 1993-11-12 | Nippondenso Co Ltd | 相補型ｍｉｓトランジスタ装置 |
| JP2009016826A (ja) * | 2007-06-29 | 2009-01-22 | Magnachip Semiconductor Ltd | 裏面照射イメージセンサ |
| JP2013065688A (ja) * | 2011-09-16 | 2013-04-11 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP2013069718A (ja) * | 2011-09-20 | 2013-04-18 | Toshiba Corp | 固体撮像装置 |
| JP2014096540A (ja) * | 2012-11-12 | 2014-05-22 | Canon Inc | 固体撮像装置およびその製造方法ならびにカメラ |
| WO2019093149A1 (ja) * | 2017-11-09 | 2019-05-16 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113811999B (zh) | 2025-08-19 |
| EP3982411A1 (en) | 2022-04-13 |
| TW202101743A (zh) | 2021-01-01 |
| CN113811999B9 (zh) | 2025-10-14 |
| CN113811999A (zh) | 2021-12-17 |
| US20220246666A1 (en) | 2022-08-04 |
| EP3982411A4 (en) | 2022-08-17 |
| TWI872068B (zh) | 2025-02-11 |
| WO2020246133A1 (ja) | 2020-12-10 |
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