CN113811999B9 - 摄像元件和摄像装置 - Google Patents

摄像元件和摄像装置

Info

Publication number
CN113811999B9
CN113811999B9 CN202080033705.7A CN202080033705A CN113811999B9 CN 113811999 B9 CN113811999 B9 CN 113811999B9 CN 202080033705 A CN202080033705 A CN 202080033705A CN 113811999 B9 CN113811999 B9 CN 113811999B9
Authority
CN
China
Prior art keywords
image pickup
pickup element
photoelectric conversion
semiconductor substrate
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080033705.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN113811999B (zh
CN113811999A (zh
Inventor
国武幸史
纳土晋一郎
正垣敦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN113811999A publication Critical patent/CN113811999A/zh
Publication of CN113811999B publication Critical patent/CN113811999B/zh
Application granted granted Critical
Publication of CN113811999B9 publication Critical patent/CN113811999B9/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CN202080033705.7A 2019-06-07 2020-04-09 摄像元件和摄像装置 Active CN113811999B9 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-106639 2019-06-07
JP2019106639 2019-06-07
PCT/JP2020/015949 WO2020246133A1 (ja) 2019-06-07 2020-04-09 撮像素子および撮像装置

Publications (3)

Publication Number Publication Date
CN113811999A CN113811999A (zh) 2021-12-17
CN113811999B CN113811999B (zh) 2025-08-19
CN113811999B9 true CN113811999B9 (zh) 2025-10-14

Family

ID=73653175

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080033705.7A Active CN113811999B9 (zh) 2019-06-07 2020-04-09 摄像元件和摄像装置

Country Status (6)

Country Link
US (1) US20220246666A1 (https=)
EP (1) EP3982411A4 (https=)
JP (1) JPWO2020246133A1 (https=)
CN (1) CN113811999B9 (https=)
TW (1) TWI872068B (https=)
WO (1) WO2020246133A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3100926A1 (fr) * 2019-09-18 2021-03-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'images réalisé en technologie 3D séquentielle
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置
WO2023105929A1 (ja) * 2021-12-10 2023-06-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2023112465A1 (ja) * 2021-12-13 2023-06-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器
WO2023119840A1 (ja) * 2021-12-20 2023-06-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器
TWI799057B (zh) * 2022-01-04 2023-04-11 力晶積成電子製造股份有限公司 影像感測器積體晶片及其形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474589B2 (ja) * 1992-04-17 2003-12-08 株式会社デンソー 相補型ｍｉｓトランジスタ装置
JP4449298B2 (ja) * 2002-03-06 2010-04-14 ソニー株式会社 固体撮像素子の製造方法および固体撮像素子
KR100870821B1 (ko) * 2007-06-29 2008-11-27 매그나칩 반도체 유한회사 후면 조사 이미지 센서
JP2009129931A (ja) * 2007-11-19 2009-06-11 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP2009238985A (ja) * 2008-03-27 2009-10-15 Kyushu Institute Of Technology 半導体撮像素子およびその製造方法
JP2010118412A (ja) * 2008-11-11 2010-05-27 Panasonic Corp 固体撮像装置及びその製造方法
JP5659707B2 (ja) * 2010-11-08 2015-01-28 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5794068B2 (ja) * 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2013069718A (ja) * 2011-09-20 2013-04-18 Toshiba Corp 固体撮像装置
JP6161258B2 (ja) * 2012-11-12 2017-07-12 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP2015082510A (ja) * 2013-10-21 2015-04-27 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2016082133A (ja) * 2014-10-20 2016-05-16 ソニー株式会社 固体撮像素子及び電子機器
JP2018186211A (ja) * 2017-04-27 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN117177592A (zh) * 2017-09-20 2023-12-05 索尼公司 光电转换器件和成像装置
KR102776683B1 (ko) * 2017-10-03 2025-03-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 전자 기기
WO2019093149A1 (ja) * 2017-11-09 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器

Also Published As

Publication number Publication date
CN113811999B (zh) 2025-08-19
EP3982411A1 (en) 2022-04-13
TW202101743A (zh) 2021-01-01
JPWO2020246133A1 (https=) 2020-12-10
CN113811999A (zh) 2021-12-17
US20220246666A1 (en) 2022-08-04
EP3982411A4 (en) 2022-08-17
TWI872068B (zh) 2025-02-11
WO2020246133A1 (ja) 2020-12-10

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Correction item: Drawings

Correct: The amendments to the drawings 6, 25 submitted under Article 28 or Article 41 of the Patent Cooperation Treatythe drawings 1-5, 7-24, 26 submitted on November 4, 2021

False: The amendment to the drawings 6, 25 submitted under Article 28 or Article 41 of the Patent Cooperation Treaty

Number: 34-01

Page: full text

Volume: 41