TWI864615B - 電漿處理裝置及氣體之排氣方法 - Google Patents

電漿處理裝置及氣體之排氣方法 Download PDF

Info

Publication number
TWI864615B
TWI864615B TW112106937A TW112106937A TWI864615B TW I864615 B TWI864615 B TW I864615B TW 112106937 A TW112106937 A TW 112106937A TW 112106937 A TW112106937 A TW 112106937A TW I864615 B TWI864615 B TW I864615B
Authority
TW
Taiwan
Prior art keywords
gas
valve
exhaust
pressure
gas cylinder
Prior art date
Application number
TW112106937A
Other languages
English (en)
Chinese (zh)
Other versions
TW202347494A (zh
Inventor
曾子維
河內昭人
今本賢司
山本譲
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202347494A publication Critical patent/TW202347494A/zh
Application granted granted Critical
Publication of TWI864615B publication Critical patent/TWI864615B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW112106937A 2022-05-18 2023-02-24 電漿處理裝置及氣體之排氣方法 TWI864615B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2022/020737 2022-05-18
PCT/JP2022/020737 WO2023223481A1 (ja) 2022-05-18 2022-05-18 プラズマ処理装置およびガスの排気方法

Publications (2)

Publication Number Publication Date
TW202347494A TW202347494A (zh) 2023-12-01
TWI864615B true TWI864615B (zh) 2024-12-01

Family

ID=88834910

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112106937A TWI864615B (zh) 2022-05-18 2023-02-24 電漿處理裝置及氣體之排氣方法

Country Status (6)

Country Link
US (1) US20250069867A1 (https=)
JP (1) JP7543566B2 (https=)
KR (1) KR102864350B1 (https=)
CN (1) CN117425950A (https=)
TW (1) TWI864615B (https=)
WO (1) WO2023223481A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025136713A1 (en) * 2023-12-20 2025-06-26 Lam Research Corporation In-situ calibration of gas flows in substrate processing systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080183340A1 (en) * 2007-01-31 2008-07-31 Naoyuki Kofuji Pressure Control Device for Low Pressure Processing Chamber
CN114256086A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种半导体反应腔的气路系统、控制方法及加工设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04180567A (ja) * 1990-11-15 1992-06-26 Nec Kyushu Ltd 半導体製造装置の材料ガス供給システム
JP3705204B2 (ja) * 2001-12-27 2005-10-12 ソニー株式会社 気相成長装置及び発光素子の製造装置
JP4606396B2 (ja) * 2006-09-15 2011-01-05 東京エレクトロン株式会社 処理ガス供給システム及び処理ガス供給方法
JP5079902B1 (ja) * 2011-05-13 2012-11-21 シャープ株式会社 反応室開放方法、及び気相成長装置
JP6567951B2 (ja) * 2015-10-23 2019-08-28 株式会社日立ハイテクノロジーズ ガス排気方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080183340A1 (en) * 2007-01-31 2008-07-31 Naoyuki Kofuji Pressure Control Device for Low Pressure Processing Chamber
CN114256086A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种半导体反应腔的气路系统、控制方法及加工设备

Also Published As

Publication number Publication date
TW202347494A (zh) 2023-12-01
KR102864350B1 (ko) 2025-09-24
WO2023223481A1 (ja) 2023-11-23
US20250069867A1 (en) 2025-02-27
JPWO2023223481A1 (https=) 2023-11-23
CN117425950A (zh) 2024-01-19
JP7543566B2 (ja) 2024-09-02
KR20230161932A (ko) 2023-11-28

Similar Documents

Publication Publication Date Title
CN101256937B (zh) 用于控制流到处理腔室的气流的方法和装置
CN101256935B (zh) 用于控制流到处理腔室的气流的方法和装置
US6946304B2 (en) Apparatus for and method of manufacturing a semiconductor device, and cleaning method for use in the apparatus for manufacturing a semiconductor device
US7137400B2 (en) Bypass loop gas flow calibration
US20050279454A1 (en) Pressure control system
KR100252219B1 (ko) 파티클 샘플링장치와 그 구동방법 및 이를 적용한 반도체소자 제조시스템
CN101256936A (zh) 用于控制流到处理腔室的气流的方法和装置
TWI864615B (zh) 電漿處理裝置及氣體之排氣方法
CN105784941A (zh) 一种在线式气体分析装置及方法
JP2014036024A (ja) プラズマ処理装置及びプラズマ処理装置の診断方法
JPH02284638A (ja) 高性能プロセスガス供給装置
TW202111290A (zh) 校準／驗證氣體混合系統之質量流量測量／控制裝置的方法及實施該方法的裝置
JP2000507875A (ja) 真空プロセッサの圧力を制御する方法及び装置
KR102511756B1 (ko) 플라스마 처리 장치의 검사 방법
WO1996034705A1 (en) Mfc-quick change method and apparatus
CN119126725A (zh) 一种半导体工艺参数处理系统与方法
JP2000171358A (ja) ガス分析計
TW202412130A (zh) 用於半導體晶圓處理工具的系統及製造半導體晶圓的方法
JP2009279527A (ja) 調圧機能付高速ガス切替装置
CN115045854A (zh) 一种基于机器学习的并列风机平衡控制方法
JPH09306851A (ja) 減圧排気システムおよび減圧気相処理装置
JP2826479B2 (ja) ガス供給装置及びその操作方法
JPS6024017A (ja) 処理ガス圧力調整方法
CN119640399A (zh) 外延装置及外延层的形成方法
TW202607518A (zh) 下游壓力控制