JPWO2023223481A1 - - Google Patents
Info
- Publication number
- JPWO2023223481A1 JPWO2023223481A1 JP2023535740A JP2023535740A JPWO2023223481A1 JP WO2023223481 A1 JPWO2023223481 A1 JP WO2023223481A1 JP 2023535740 A JP2023535740 A JP 2023535740A JP 2023535740 A JP2023535740 A JP 2023535740A JP WO2023223481 A1 JPWO2023223481 A1 JP WO2023223481A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/020737 WO2023223481A1 (ja) | 2022-05-18 | 2022-05-18 | プラズマ処理装置およびガスの排気方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023223481A1 true JPWO2023223481A1 (https=) | 2023-11-23 |
| JPWO2023223481A5 JPWO2023223481A5 (https=) | 2024-04-25 |
| JP7543566B2 JP7543566B2 (ja) | 2024-09-02 |
Family
ID=88834910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023535740A Active JP7543566B2 (ja) | 2022-05-18 | 2022-05-18 | プラズマ処理装置およびガスの排気方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250069867A1 (https=) |
| JP (1) | JP7543566B2 (https=) |
| KR (1) | KR102864350B1 (https=) |
| CN (1) | CN117425950A (https=) |
| TW (1) | TWI864615B (https=) |
| WO (1) | WO2023223481A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025136713A1 (en) * | 2023-12-20 | 2025-06-26 | Lam Research Corporation | In-situ calibration of gas flows in substrate processing systems |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04180567A (ja) * | 1990-11-15 | 1992-06-26 | Nec Kyushu Ltd | 半導体製造装置の材料ガス供給システム |
| WO2008032516A1 (fr) * | 2006-09-15 | 2008-03-20 | Tokyo Electron Limited | Système d'alimentation de gaz de traitement et procédé d'alimentation de gaz de traitement |
| JP2012238772A (ja) * | 2011-05-13 | 2012-12-06 | Sharp Corp | 反応室開放方法、及び気相成長装置 |
| JP2017084882A (ja) * | 2015-10-23 | 2017-05-18 | 株式会社日立ハイテクノロジーズ | 半導体製造装置のガス排気方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3705204B2 (ja) * | 2001-12-27 | 2005-10-12 | ソニー株式会社 | 気相成長装置及び発光素子の製造装置 |
| JP4961223B2 (ja) * | 2007-01-31 | 2012-06-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の圧力制御方法 |
| CN114256086A (zh) * | 2020-09-24 | 2022-03-29 | 中国科学院微电子研究所 | 一种半导体反应腔的气路系统、控制方法及加工设备 |
-
2022
- 2022-05-18 CN CN202280008559.1A patent/CN117425950A/zh active Pending
- 2022-05-18 JP JP2023535740A patent/JP7543566B2/ja active Active
- 2022-05-18 KR KR1020237021673A patent/KR102864350B1/ko active Active
- 2022-05-18 WO PCT/JP2022/020737 patent/WO2023223481A1/ja not_active Ceased
- 2022-05-18 US US18/279,460 patent/US20250069867A1/en active Pending
-
2023
- 2023-02-24 TW TW112106937A patent/TWI864615B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04180567A (ja) * | 1990-11-15 | 1992-06-26 | Nec Kyushu Ltd | 半導体製造装置の材料ガス供給システム |
| WO2008032516A1 (fr) * | 2006-09-15 | 2008-03-20 | Tokyo Electron Limited | Système d'alimentation de gaz de traitement et procédé d'alimentation de gaz de traitement |
| JP2012238772A (ja) * | 2011-05-13 | 2012-12-06 | Sharp Corp | 反応室開放方法、及び気相成長装置 |
| JP2017084882A (ja) * | 2015-10-23 | 2017-05-18 | 株式会社日立ハイテクノロジーズ | 半導体製造装置のガス排気方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202347494A (zh) | 2023-12-01 |
| KR102864350B1 (ko) | 2025-09-24 |
| WO2023223481A1 (ja) | 2023-11-23 |
| US20250069867A1 (en) | 2025-02-27 |
| CN117425950A (zh) | 2024-01-19 |
| JP7543566B2 (ja) | 2024-09-02 |
| TWI864615B (zh) | 2024-12-01 |
| KR20230161932A (ko) | 2023-11-28 |
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