CN117425950A - 等离子处理装置以及气体的排气方法 - Google Patents

等离子处理装置以及气体的排气方法 Download PDF

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Publication number
CN117425950A
CN117425950A CN202280008559.1A CN202280008559A CN117425950A CN 117425950 A CN117425950 A CN 117425950A CN 202280008559 A CN202280008559 A CN 202280008559A CN 117425950 A CN117425950 A CN 117425950A
Authority
CN
China
Prior art keywords
gas
valve
exhaust
pressure
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280008559.1A
Other languages
English (en)
Chinese (zh)
Inventor
曾子维
河内昭人
今本贤司
山本让
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN117425950A publication Critical patent/CN117425950A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202280008559.1A 2022-05-18 2022-05-18 等离子处理装置以及气体的排气方法 Pending CN117425950A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020737 WO2023223481A1 (ja) 2022-05-18 2022-05-18 プラズマ処理装置およびガスの排気方法

Publications (1)

Publication Number Publication Date
CN117425950A true CN117425950A (zh) 2024-01-19

Family

ID=88834910

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280008559.1A Pending CN117425950A (zh) 2022-05-18 2022-05-18 等离子处理装置以及气体的排气方法

Country Status (6)

Country Link
US (1) US20250069867A1 (https=)
JP (1) JP7543566B2 (https=)
KR (1) KR102864350B1 (https=)
CN (1) CN117425950A (https=)
TW (1) TWI864615B (https=)
WO (1) WO2023223481A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025136713A1 (en) * 2023-12-20 2025-06-26 Lam Research Corporation In-situ calibration of gas flows in substrate processing systems

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04180567A (ja) * 1990-11-15 1992-06-26 Nec Kyushu Ltd 半導体製造装置の材料ガス供給システム
JP3705204B2 (ja) * 2001-12-27 2005-10-12 ソニー株式会社 気相成長装置及び発光素子の製造装置
JP4606396B2 (ja) * 2006-09-15 2011-01-05 東京エレクトロン株式会社 処理ガス供給システム及び処理ガス供給方法
JP4961223B2 (ja) * 2007-01-31 2012-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置の圧力制御方法
JP5079902B1 (ja) * 2011-05-13 2012-11-21 シャープ株式会社 反応室開放方法、及び気相成長装置
JP6567951B2 (ja) * 2015-10-23 2019-08-28 株式会社日立ハイテクノロジーズ ガス排気方法
CN114256086A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种半导体反应腔的气路系统、控制方法及加工设备

Also Published As

Publication number Publication date
TW202347494A (zh) 2023-12-01
KR102864350B1 (ko) 2025-09-24
WO2023223481A1 (ja) 2023-11-23
US20250069867A1 (en) 2025-02-27
JPWO2023223481A1 (https=) 2023-11-23
JP7543566B2 (ja) 2024-09-02
TWI864615B (zh) 2024-12-01
KR20230161932A (ko) 2023-11-28

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