KR102864350B1 - 플라스마 처리 장치 및 가스의 배기 방법 - Google Patents

플라스마 처리 장치 및 가스의 배기 방법

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Publication number
KR102864350B1
KR102864350B1 KR1020237021673A KR20237021673A KR102864350B1 KR 102864350 B1 KR102864350 B1 KR 102864350B1 KR 1020237021673 A KR1020237021673 A KR 1020237021673A KR 20237021673 A KR20237021673 A KR 20237021673A KR 102864350 B1 KR102864350 B1 KR 102864350B1
Authority
KR
South Korea
Prior art keywords
gas
valve
exhaust
pressure
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237021673A
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English (en)
Korean (ko)
Other versions
KR20230161932A (ko
Inventor
쯔 웨이 쳉
아키토 고치
겐지 이마모토
유즈루 야마모토
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20230161932A publication Critical patent/KR20230161932A/ko
Application granted granted Critical
Publication of KR102864350B1 publication Critical patent/KR102864350B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020237021673A 2022-05-18 2022-05-18 플라스마 처리 장치 및 가스의 배기 방법 Active KR102864350B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020737 WO2023223481A1 (ja) 2022-05-18 2022-05-18 プラズマ処理装置およびガスの排気方法

Publications (2)

Publication Number Publication Date
KR20230161932A KR20230161932A (ko) 2023-11-28
KR102864350B1 true KR102864350B1 (ko) 2025-09-24

Family

ID=88834910

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237021673A Active KR102864350B1 (ko) 2022-05-18 2022-05-18 플라스마 처리 장치 및 가스의 배기 방법

Country Status (6)

Country Link
US (1) US20250069867A1 (https=)
JP (1) JP7543566B2 (https=)
KR (1) KR102864350B1 (https=)
CN (1) CN117425950A (https=)
TW (1) TWI864615B (https=)
WO (1) WO2023223481A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025136713A1 (en) * 2023-12-20 2025-06-26 Lam Research Corporation In-situ calibration of gas flows in substrate processing systems

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008032516A1 (fr) 2006-09-15 2008-03-20 Tokyo Electron Limited Système d'alimentation de gaz de traitement et procédé d'alimentation de gaz de traitement
JP2012238772A (ja) 2011-05-13 2012-12-06 Sharp Corp 反応室開放方法、及び気相成長装置
JP2017084882A (ja) 2015-10-23 2017-05-18 株式会社日立ハイテクノロジーズ 半導体製造装置のガス排気方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04180567A (ja) * 1990-11-15 1992-06-26 Nec Kyushu Ltd 半導体製造装置の材料ガス供給システム
JP3705204B2 (ja) * 2001-12-27 2005-10-12 ソニー株式会社 気相成長装置及び発光素子の製造装置
JP4961223B2 (ja) * 2007-01-31 2012-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置の圧力制御方法
CN114256086A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种半导体反应腔的气路系统、控制方法及加工设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008032516A1 (fr) 2006-09-15 2008-03-20 Tokyo Electron Limited Système d'alimentation de gaz de traitement et procédé d'alimentation de gaz de traitement
JP2012238772A (ja) 2011-05-13 2012-12-06 Sharp Corp 反応室開放方法、及び気相成長装置
JP2017084882A (ja) 2015-10-23 2017-05-18 株式会社日立ハイテクノロジーズ 半導体製造装置のガス排気方法

Also Published As

Publication number Publication date
TW202347494A (zh) 2023-12-01
WO2023223481A1 (ja) 2023-11-23
US20250069867A1 (en) 2025-02-27
JPWO2023223481A1 (https=) 2023-11-23
CN117425950A (zh) 2024-01-19
JP7543566B2 (ja) 2024-09-02
TWI864615B (zh) 2024-12-01
KR20230161932A (ko) 2023-11-28

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