JP7543566B2 - プラズマ処理装置およびガスの排気方法 - Google Patents

プラズマ処理装置およびガスの排気方法 Download PDF

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Publication number
JP7543566B2
JP7543566B2 JP2023535740A JP2023535740A JP7543566B2 JP 7543566 B2 JP7543566 B2 JP 7543566B2 JP 2023535740 A JP2023535740 A JP 2023535740A JP 2023535740 A JP2023535740 A JP 2023535740A JP 7543566 B2 JP7543566 B2 JP 7543566B2
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Japan
Prior art keywords
gas
valve
exhaust
processing apparatus
pressure
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JP2023535740A
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Japanese (ja)
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JPWO2023223481A5 (https=
JPWO2023223481A1 (https=
Inventor
子維 曽
昭人 河内
賢司 今本
譲 山本
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2023535740A 2022-05-18 2022-05-18 プラズマ処理装置およびガスの排気方法 Active JP7543566B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020737 WO2023223481A1 (ja) 2022-05-18 2022-05-18 プラズマ処理装置およびガスの排気方法

Publications (3)

Publication Number Publication Date
JPWO2023223481A1 JPWO2023223481A1 (https=) 2023-11-23
JPWO2023223481A5 JPWO2023223481A5 (https=) 2024-04-25
JP7543566B2 true JP7543566B2 (ja) 2024-09-02

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JP2023535740A Active JP7543566B2 (ja) 2022-05-18 2022-05-18 プラズマ処理装置およびガスの排気方法

Country Status (6)

Country Link
US (1) US20250069867A1 (https=)
JP (1) JP7543566B2 (https=)
KR (1) KR102864350B1 (https=)
CN (1) CN117425950A (https=)
TW (1) TWI864615B (https=)
WO (1) WO2023223481A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025136713A1 (en) * 2023-12-20 2025-06-26 Lam Research Corporation In-situ calibration of gas flows in substrate processing systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008032516A1 (fr) 2006-09-15 2008-03-20 Tokyo Electron Limited Système d'alimentation de gaz de traitement et procédé d'alimentation de gaz de traitement
JP2012238772A (ja) 2011-05-13 2012-12-06 Sharp Corp 反応室開放方法、及び気相成長装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04180567A (ja) * 1990-11-15 1992-06-26 Nec Kyushu Ltd 半導体製造装置の材料ガス供給システム
JP3705204B2 (ja) * 2001-12-27 2005-10-12 ソニー株式会社 気相成長装置及び発光素子の製造装置
JP4961223B2 (ja) * 2007-01-31 2012-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置の圧力制御方法
JP6567951B2 (ja) * 2015-10-23 2019-08-28 株式会社日立ハイテクノロジーズ ガス排気方法
CN114256086A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种半导体反应腔的气路系统、控制方法及加工设备

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008032516A1 (fr) 2006-09-15 2008-03-20 Tokyo Electron Limited Système d'alimentation de gaz de traitement et procédé d'alimentation de gaz de traitement
JP2012238772A (ja) 2011-05-13 2012-12-06 Sharp Corp 反応室開放方法、及び気相成長装置

Also Published As

Publication number Publication date
TW202347494A (zh) 2023-12-01
KR102864350B1 (ko) 2025-09-24
WO2023223481A1 (ja) 2023-11-23
US20250069867A1 (en) 2025-02-27
JPWO2023223481A1 (https=) 2023-11-23
CN117425950A (zh) 2024-01-19
TWI864615B (zh) 2024-12-01
KR20230161932A (ko) 2023-11-28

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