TWI851643B - 用於形成具有低漏電流的含矽硼膜之方法 - Google Patents

用於形成具有低漏電流的含矽硼膜之方法 Download PDF

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TWI851643B
TWI851643B TW109100033A TW109100033A TWI851643B TW I851643 B TWI851643 B TW I851643B TW 109100033 A TW109100033 A TW 109100033A TW 109100033 A TW109100033 A TW 109100033A TW I851643 B TWI851643 B TW I851643B
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sccm
gas
mol
boron nitride
nitride layer
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Chinese (zh)
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TW202031924A (zh
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楊傳曦
航 于
山傑 卡瑪斯
迪尼斯 帕奇
金弘根
銀基 李
黃祖濱
狄瓦卡N 凱德拉雅
程睿
卡希克 加納基拉曼
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美商應用材料股份有限公司
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    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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TW109100033A 2019-01-02 2020-01-02 用於形成具有低漏電流的含矽硼膜之方法 TWI851643B (zh)

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CN113316835B (zh) 2019-01-02 2025-08-19 应用材料公司 用于形成具有低漏电流的含硅硼膜的方法
KR102748790B1 (ko) 2019-11-08 2024-12-30 어플라이드 머티어리얼스, 인코포레이티드 재료 표면 거칠기를 감소시키기 위한 방법들
CN113823630B (zh) * 2020-06-19 2024-02-13 长鑫存储技术有限公司 半导体器件、电容装置及电容装置的制造方法
KR102764319B1 (ko) 2020-09-02 2025-02-07 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 장치
US11515145B2 (en) * 2020-09-11 2022-11-29 Applied Materials, Inc. Deposition of silicon boron nitride films
US11676813B2 (en) * 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
US12033848B2 (en) 2021-06-18 2024-07-09 Applied Materials, Inc. Processes for depositing sib films

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TW201520358A (zh) * 2013-10-07 2015-06-01 東京威力科創股份有限公司 矽氮化物膜之成膜方法及成膜裝置
TW201710538A (zh) * 2015-09-11 2017-03-16 氣體產品及化學品股份公司 用於沉積一保形的金屬或類金屬氮化矽膜的方法及所形成的膜
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