US20200211834A1 - Methods for forming films containing silicon boron with low leakage current - Google Patents

Methods for forming films containing silicon boron with low leakage current Download PDF

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US20200211834A1
US20200211834A1 US16/725,226 US201916725226A US2020211834A1 US 20200211834 A1 US20200211834 A1 US 20200211834A1 US 201916725226 A US201916725226 A US 201916725226A US 2020211834 A1 US2020211834 A1 US 2020211834A1
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sccm
flow
process gas
mol
boron nitride
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Inventor
Chuanxi YANG
Hang Yu
Sanjay Kamath
Deenesh Padhi
Honggun KIM
Euhngi Lee
Zubin HUANG
Diwakar N. KEDLAYA
Rui CHENG
Karthik Janakiraman
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Applied Materials Inc
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Applied Materials Inc
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Priority to US16/725,226 priority Critical patent/US20200211834A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAMATH, SANJAY, YU, Hang, KEDLAYA, Diwakar N., CHENG, Rui, LEE, EUHNGI, PADHI, DEENESH, HUANG, ZUBIN, JANAKIRAMAN, KARTHIK, KIM, HONGGUN, YANG, Chuanxi
Publication of US20200211834A1 publication Critical patent/US20200211834A1/en
Priority to US18/650,014 priority patent/US12451345B2/en
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Definitions

  • Embodiments of the present disclosure generally relate to deposition processes, and more specifically relate to methods for forming films containing silicon boron nitride (SiBN).
  • DRAM dynamic random-access memory
  • silicon and nitrogen containing stopper and supporter layers For many DRAM devices, there is a need to fill the silicon and nitrogen containing layer to also contain boron.
  • silicon boron nitride containing layers generally have unfavorable thermal budgets and high leakage current values. The high thermal budget increases boron diffusion during additional DRAM device forming processes, such as wet etching, causing deformation and the high leakage current results in results in electrical short circuiting between the capacitors of DRAM devices.
  • Embodiments of the present disclosure generally relate to improved silicon boron nitride layers and methods for forming silicon boron nitride layers having a relatively high boron concentration and a relatively low leakage current.
  • the silicon boron nitride layer is a supporter layer and/or a stopper layer within a capacitor or other electronic device.
  • a method for forming a silicon boron nitride layer includes positioning a substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate to a deposition temperature of about 225° C. to about 575° C., and introducing a first flow of a first process gas and a second flow of a second process gas to the process region.
  • the first flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen (N 2 ) having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H 2 ) having a flow rate of about 50 sccm to about 20,000 sccm.
  • the second flow of the second process gas contains about 2 molar percent (mol %) to about 15 mol % of diborane, about 85 mol % to about 98 mol % of hydrogen, and a flow rate of about 1 sccm to about 5,000 sccm.
  • the method also includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.
  • a method for forming a silicon boron nitride layer includes positioning a substrate on a pedestal in a process region within a process chamber and introducing a first flow of a first process gas and a second flow of a second process gas to the process region.
  • the first flow of the first process gas contains a silicon-containing precursor, a nitrogen-containing precursor, hydrogen, and at least two gases selected from the group consisting of argon, helium, nitrogen, and any combination thereof.
  • the second flow of the second process gas contains about 2 mol % to about 15 mol % of diborane, about 85 mol % to about 98 mol % of hydrogen, and a flow rate of about 1 sccm to about 5,000 sccm.
  • the method also includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.
  • the silicon boron nitride layer contains about 10 atomic percent (at %) to about 50 at % of boron, has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, and has a leakage current of less than 1 ⁇ 10 ⁇ 9 A/cm 2 at 1.5 MV/cm.
  • a method for forming a silicon boron nitride layer includes positioning a substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate to a deposition temperature of about 225° C. to about 575° C., maintaining the process region at a pressure of about 2 Torr to about 8 Torr, and introducing a first flow of a first process gas to the process region.
  • the first flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen having a flow rate of about 50 sccm to about 20,000 sccm.
  • the method further includes discontinuing the first flow of the first process gases, forming a plasma concurrently with a second flow of a second process gas to the process region, and forming the silicon boron nitride layer on the substrate.
  • the second flow of the second process gas has a flow rate of about 1 sccm to about 5,000 sccm and contains about 2 mol % to about 15 mol % of diborane and about 85 mol % to about 98 mol % of hydrogen.
  • FIG. 1 depicts a schematic cross-sectional view of a process chamber, according to one or more embodiments described and discussed herein.
  • FIG. 2 depicts a schematic cross-sectional view of another process chamber, according to one or more embodiments described and discussed herein.
  • FIG. 3 is a flow diagram of a method of forming a silicon boron nitride layer, according to one or more embodiments described and discussed herein.
  • FIG. 4 depicts a capacitor device containing silicon boron nitride layers which can be deposited or otherwise produced by methods according to one or more embodiments described and discussed herein.
  • Embodiments of the present disclosure generally relate to improved silicon boron nitride layers and methods for forming silicon boron nitride layers.
  • These silicon boron nitride materials and layers have relatively high boron concentrations and low leakage currents, as well as other properties which are applicable for use in electronic devices, such as capacitors.
  • the silicon boron nitride layers described and discussed here can be used as supporter layers and/or stopper layers within a capacitor or other electronic device.
  • the silicon boron nitride layer can have a boron concentration of about 10 atomic percent (at %) to about 50 at %, such as about 20 at % to about 40 at % and a leakage current of less than 1 ⁇ 10 ⁇ 9 A/cm 2 at 1.5 MV/cm.
  • methods for forming the silicon boron nitride layer includes positioning the substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate to a deposition temperature, and introducing a first flow of a first process gas and a second flow of a second process gas to the process region.
  • a plasma is concurrently ignited or otherwise formed with the first flow of the first process gas and the second flow of the second process gas to the process region.
  • the plasma can be generated remotely of the process chamber or in-situ the process chamber.
  • the substrate is exposed to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate during a plasma enhanced chemical vapor deposition (PE-CVD) process.
  • PE-CVD plasma enhanced chemical vapor deposition
  • the pedestal retaining the substrate disposed thereon is heated to a deposition temperature of about 225° C., about 250° C., about 300° C., about 350° C., about 400° C., or about 450° C. to about 475° C., about 500° C., about 525° C., about 550° C., about 560° C., about 570° C., about 575° C., about 580° C., or about 600° C. during the PE-CVD process.
  • the substrate is heated to a deposition temperature of about 225° C. to about 600° C., about 225° C. to about 575° C., about 225° C. to about 560° C., about 225° C.
  • the process region is maintained at a pressure of less than 100 Torr, less than 50 Torr, less than 20 Torr, or less than 10 Torr during the PE-CVD process.
  • the process region is maintained at a pressure of about 0.5 Torr, about 1 Torr, about 2 Torr, about 3 Torr, or about 4 Torr to about 5 Torr, about 6 Torr, about 7 Torr, about 8 Torr, or about 9 Torr.
  • the process region is maintained at a pressure of about 0.5 Torr to less than 10 Torr, about 2 Torr to less than 10 Torr, about 2 Torr to about 8 Torr, about 2 Torr to about 6 Torr, about 2 Torr to about 5 Torr, about 2 Torr to about 4 Torr, about 3 Torr to less than 10 Torr, about 3 Torr to about 8 Torr, about 3 Torr to about 6 Torr, about 3 Torr to about 5 Torr, about 3 Torr to about 4 Torr, about 4 Torr to less than 10 Torr, about 4 Torr to about 8 Torr, about 4 Torr to about 6 Torr, or about 4 Torr to about 5 Torr.
  • the pedestal is positioned at a process distance which is the distance between the pedestal and the showerhead within the process chamber during the PE-CVD process.
  • the process distance is about 100 mil (about 2.5 millimeter (mm)), about 200 mil (about 5 mm), about 300 mil (about 7.5 mm), or about 400 mil (about 10 mm) to about 500 mil (about 12.5 mm), about 600 mil (about 15 mm), about 800 mil (about 20 mm), about 1,000 mil (about 25.4 mm), about 2,000 mil (about 50.8 mm), or about 5,000 mil (about 127 mm).
  • the process distance is about 100 mil to about 5,000 mil, about 100 mil to about 2,000 mil, about 100 mil to about 1,000 mil, about 100 mil to about 800 mil, about 100 mil to about 600 mil, about 100 mil to about 500 mil, about 100 mil to about 400 mil, about 100 mil to about 300 mil, about 300 mil to about 2,000 mil, about 300 mil to about 1,000 mil, about 300 mil to about 800 mil, about 300 mil to about 600 mil, about 300 mil to about 500 mil, or about 300 mil to about 400 mil.
  • the first flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H 2 ), and at least two process or carrier gases, selected from argon, helium, nitrogen (N 2 ), or any combination thereof.
  • Exemplary silicon-containing precursors can be or include silane, disilane, trisilane, tetrasilane, or any combination thereof.
  • Exemplary nitrogen-containing precursors can be or include ammonia, hydrazine, one or more alkylamines (e.g., dimethylamine), or any combination thereof.
  • the first process gas contains silane, ammonia, hydrogen (H 2 ), argon, helium, and nitrogen (N 2 ).
  • the first flow of the first process gas contains a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 30 sccm, or about 50 sccm to about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 400 sccm, about 500 sccm, about 800 sccm, about 1,000 sccm, about 1,500 sccm, or about 2,000 sccm.
  • a silicon-containing precursor e.g., silane
  • the first flow of the first process gas contains a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm to about 2,000 sccm, about 1 sccm to about 1,000 sccm, about 1 sccm to about 500 sccm, about 1 sccm to about 250 sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50 sccm, about 10 sccm to about 2,000 sccm, about 10 sccm to about 1,000 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 250 sccm, about 10 sccm to about 100 sccm, about 10 sccm to about 50 sccm, about 20 sccm to about 2,000 sccm, about 20 sccm to about 1,000 sc
  • the first flow of the first process gas contains a nitrogen-containing precursor (e.g., ammonia) having a flow rate of about 1 sccm, about 10 sccm, about 50 sccm, about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 500 sccm, or about 800 sccm to about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 2,500 sccm, about 3,000 sccm, about 4,000 sccm, about 5,000 sccm, about 7,000 sccm, about 8,500 sccm, or about 10,000 sccm.
  • a nitrogen-containing precursor e.g., ammonia
  • the first flow of the first process gas contains a nitrogen-containing precursor (e.g., ammonia) having a flow rate of about 1 sccm to about 10,000 sccm, about 10 sccm to about 10,000 sccm, about 10 sccm to about 5,000 sccm, about 10 sccm to about 4,000 sccm, about 10 sccm to about 3,000 sccm, about 10 sccm to about 2,000 sccm, about 10 sccm to about 1,500 sccm, about 10 sccm to about 1,000 sccm, about 10 sccm to about 800 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccmm
  • the first flow of the first process gas contains helium having a flow rate of about 100 sccm, about 500 sccm, about 750 sccm, or about 1,000 sccm to about 1,500 sccm, about 2,000 sccm, about 5,000 sccm, about 8,000 sccm, about 10,000 sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or about 50,000 sccm.
  • the first flow of the first process gas contains helium having a flow rate of about 100 sccm to about 50,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to about 40,000 sccm, about 500 sccm to about 20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500 sccm to about 8,000 sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about 1,000 sccm, about 750 sccm to about 50,000 sccm, about 750 sccm to about 40,000 sccm, about 750 sccm to about 20,000 sccm, about 750 sccm to about 15,000
  • the first flow of the first process gas contains nitrogen (N 2 ) having a flow rate of about 100 sccm, about 500 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,500 sccm, about 5,000 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, or about 15,000 sccm to about 18,000 sccm, about 20,000 sccm, about 22,000 sccm, about 25,000 sccm, about 30,000 sccm, about 35,000 sccm, about 40,000 sccm, or about 50,000 sccm.
  • nitrogen (N 2 ) having a flow rate of about 100 sccm, about 500 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,500 sccm
  • the first flow of the first process gas contains nitrogen having a flow rate of about 100 sccm to about 50,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to about 40,000 sccm, about 500 sccm to about 20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500 sccm to about 8,000 sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about 1,000 sccm, about 1,000 sccm to about 50,000 sccm, about 1,000 sccm to about 40,000 sccm, about 1,000 sccm to about 30,000 sccm, about 1,000 sccm to about 25,000 sccm,
  • the first flow of the first process gas contains argon having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4,000 sccm, or about 5,000 sccm to about 6,000 sccm, about 7,500 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or about 50,000 sccm.
  • the first flow of the first process gas contains argon having a flow rate of about 50 sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 7,500 sccm, about 50 sccm to about 6,000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about 3,000 sccm, about 50 sccm to about 1,000 sccm, about 200 sccm to about 50,000 sccm, about 200 sccm to about 30,000 sccm,
  • the first flow of the first process gas contains hydrogen (H 2 ) having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4,000 sccm, or about 5,000 sccm to about 6,000 sccm, about 7,500 sccm, about 8,000 sccm, about 10,000 sccm, about 12,000 sccm, about 15,000 sccm, about 20,000 sccm, about 30,000 sccm, about 40,000 sccm, or about 50,000 sccm.
  • hydrogen H 2
  • the first flow of the first process gas contains hydrogen having a flow rate of about 50 sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 7,500 sccm, about 50 sccm to about 6,000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about 3,000 sccm, about 50 sccm to about 1,000 sccm, about 200 sccm to about 50,000 sccm, about 200 sccm to about 30,000 sccm,
  • the first flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen (N 2 ) having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H 2 ) having a flow rate of about 50 sccm to about 20,000 sccm.
  • silane having a flow rate of about 1 sccm to about 500 sccm
  • ammonia having a flow rate of about 10 sccm to about 5,000 sccm
  • helium having a flow rate of about 500 sccm to about 20,000 sccm
  • the first flow of the first process gas contains the silane having a flow rate of about 10 sccm to about 250 sccm, the ammonia having a flow rate of about 50 sccm to about 2,000 sccm, the helium having a flow rate of about 750 sccm to about 15,000 sccm, the nitrogen having a flow rate of about 10,000 sccm to about 20,000 sccm, the argon having a flow rate of about 200 sccm to about 7,500 sccm, and the hydrogen having a flow rate of about 200 sccm to about 15,000 sccm.
  • the first flow of the first process gas contains the silane having a flow rate of about 20 sccm to about 100 sccm, the ammonia having a flow rate of about 100 sccm to about 1,000 sccm, the helium having a flow rate of about 1,000 sccm to about 10,000 sccm, the nitrogen having a flow rate of about 12,000 sccm to about 18,000 sccm, the argon having a flow rate of about 500 sccm to about 5,000 sccm, and the hydrogen having a flow rate of about 500 sccm to about 10,000 sccm.
  • the second process gas contains one or more boron-containing precursors (e.g., diborane) and hydrogen (H 2 ). In some examples, the second process gas contains about 20 mol % or less of diborane and the remainder is hydrogen.
  • the second process gas contains the boron-containing precursors (e.g., diborane) at a concentration of about 1 molar percent (mol %), about 2 mol %, about 3 mol %, about 4 mol %, or about 5 mol % to about 6 mol %, about 8 mol %, about 10 mol %, about 12 mol %, about 15 mol %, or about 20 mol %.
  • the second process gas contains the boron-containing precursors (e.g., diborane) at a concentration of about 2 mol % to about 20 mol %, about 2 mol % to about 15 mol %, about 2 mol % to about 12 mol %, about 2 mol % to about 10 mol %, about 2 mol % to about 8 mol %, about 2 mol % to about 5 mol %, about 2 mol % to about 3 mol %, about 3 mol % to about 20 mol %, about 3 mol % to about 15 mol %, about 3 mol % to about 12 mol %, about 3 mol % to about 10 mol %, about 3 mol % to about 8 mol %, about 3 mol % to about 5 mol %, about 5 mol % to about 20 mol %, about 5 mol % to about 15 %, about 5 mol % to about 12 mol %, about 3
  • the second process gas contains the hydrogen (H 2 ) at a concentration of about 80 mol %, about 85 mol %, about 88 mol %, about 90 mol %, about 92 mol %, about 94 mol %, or about 95 mol % to about 96 mol %, about 97 mol %, about 98 mol %, or about 99 mol %.
  • the second process gas contains hydrogen at a concentration of about 80 mol % to about 99 mol %, about 80 mol % to about 95 mol %, about 80 mol % to about 92 mol %, about 80 mol % to about 90 mol %, about 80 mol % to about 88 mol %, about 80 mol % to about 85 mol %, about 85 mol % to about 99 mol %, about 85 mol % to about 98 mol %, about 85 mol % to about 95 mol %, about 85 mol % to about 92 mol %, about 85 mol % to about 90 mol %, about 85 mol % to about 88 mol %, about 88 mol % to about 97 mol %, about 90 mol % to about 99 mol %, about 90 mol % to about 95 mol %, about 90 mol % to about 92 mol %, or about 95 mol % to about
  • the second flow of the second process gas has a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 35 sccm, about 50 sccm, about 65 sccm, about 80 sccm, or about 100 sccm to about 150 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 800 sccm, about 1,000 sccm, about 1,500 sccm, about 2,000 sccm, about 3,000 sccm, about 4.00 sccm, or about 5,000 sccm.
  • the second flow of the second process gas has a flow rate of about 1 sccm to about 5,000 sccm, about 1 sccm to about 3,000 sccm, about 1 sccm to about 2,000 sccm, about 1 sccm to about 1,000 sccm, about 1 sccm to about 500 sccm, about 1 sccm to about 300 sccm, about 1 sccm to about 200 sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50 sccm, about 5 sccm to about 5,000 sccm, about 5 sccm to about 3,000 sccm, about 5 sccm to about 2,000 sccm, about 5 sccm to about 1,000 sccm, about 5 sccm to about 500 sccm, about 5 sccm to about 5
  • the second process gas contains about 2 mol % to about 15 mol % of diborane and about 85 mol % to about 98 mol % of hydrogen, and has a flow rate of about 1 sccm to about 5,000 sccm. In other examples, the second process gas contains about 3 mol % to about 12 mol % of diborane and about 88 mol % to about 97 mol % of hydrogen, and has a flow rate of about 5 sccm to about 2,000 sccm.
  • the second process gas contains about 5 mol % to about 10 mol % of diborane and about 90 mol % to about 95 mol % of hydrogen, and has a flow rate of about 10 sccm to about 1,000 sccm.
  • the silicon boron nitride layer contains at least boron, silicon, nitrogen, and hydrogen. In some examples, the silicon boron nitride layer contains more nitrogen than silicon, more silicon than boron, and more boron than hydrogen. In one or more embodiments, the silicon boron nitride layer can have a boron concentration of about 10 atomic percent (at %), about 12 at %, about 15 at %, or about 18 at % to about 20 at %, about 22 at %, about 25 at %, about 28 at %, about 30 at %, about 35 at %, about 40 at %, about 45 at %, or about 50 at %.
  • the silicon boron nitride layer can have a boron concentration of about 10 at % to about 50 at %, about 10 at % to about 45 at %, about 10 at % to about 40 at %, about 10 at % to about 35 at %, about 10 at % to about 30 at %, about 10 at % to about 28 at %, about 10 at % to about 25 at %, about 10 at % to about 22 at %, about 10 at % to about 20 at %, about 10 at % to about 18 at %, about 12 at % to about 45 at %, about 12 at % to about 40 at %, about 12 at % to about 30 at %, about 15 at % to about 50 at %, about 15 at % to about 45 at %, about 15 at % to about 40 at %, about 15 at % to about 35 at %, about 15 at % to about 30 at %, about 15 at % to about 28 at %, about 15 at % to
  • the silicon boron nitride layer can have a hydrogen concentration of about 1 at %, about 2 at %, about 3 at %, about 4 at %, about 5 at %, or about 6 at % to about 7 at %, about 8 at %, about 10 at %, about 12 at %, about 15 at %, about 18 at %, or about 20 at %.
  • the silicon boron nitride layer can have a hydrogen concentration of about 1 at % to about 20 at %, about 1 at % to about 15 at %, about 2 at % to about 15 at %, about 3 at % to about 15 at %, about 5 at % to about 15 at %, about 6 at % to about 15 at %, about 8 at % to about 15 at %, about 10 at % to about 15 at %, about 12 at % to about 15 at %, about 1 at % to about 10 at %, about 2 at % to about 10 at %, about 3 at % to about 10 at %, about 5 at % to about 10 at %, about 6 at % to about 10 at %, or about 8 at % to about 10 at %.
  • the silicon boron nitride layer can have a nitrogen concentration of about 20 at %, about 22 at %, about 25 at %, about 28 at %, or about 30 at % to about 32 at %, about 35 at %, about 38 at %, about 40 at %, about 42 at %, about 45 at %, about 48 at %, or about 50 at %.
  • the silicon boron nitride layer can have a nitrogen concentration of about 20 at % to about 50 at %, about 20 at % to about 40 at %, about 20 at % to about 35 at %, about 20 at % to about 30 at %, about 20 at % to about 25 at %, about 25 at % to about 50 at %, about 25 at % to about 40 at %, about 25 at % to about 35 at %, about 25 at % to about 30 at %, about 25 at % to about 28 at %, about 30 at % to about 50 at %, about 30 at % to about 40 at %, about 30 at % to about 35 at %, or about 30 at % to about 32 at %.
  • the silicon boron nitride layer can have a silicon concentration of about 18 at %, about 20 at %, about 22 at %, about 25 at %, about 28 at %, or about 30 at % to about 32 at %, about 35 at %, about 38 at %, about 40 at %, about 42 at %, or about 45 at %.
  • the silicon boron nitride layer can have a silicon concentration of about 18 at % to about 45 at %, about 18 at % to about 40 at %, about 18 at % to about 35 at %, about 18 at % to about 30 at %, about 18 at % to about 25 at %, about 25 at % to about 45 at %, about 25 at % to about 40 at %, about 25 at % to about 35 at %, about 25 at % to about 30 at %, about 25 at % to about 28 at %, about 30 at % to about 45 at %, about 30 at % to about 40 at %, about 30 at % to about 35 at %, about 30 at % to about 32 at %, about 28 at % to about 40 at %, about 28 at % to about 35 at %, or about 28 at % to about 32 at %.
  • the silicon boron nitride layer has a nitrogen to silicon atomic ratio of greater than 1.
  • the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.05, about 1.1, about 1.15, or about 1.2 to about 1.25, about 1.3, about 1.35, about 1.4, about 1.45, or about 1.5.
  • the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, about 1.05 to about 1.4, about 1.05 to about 1.35, about 1.05 to about 1.3, about 1.05 to about 1.25, about 1.05 to about 1.2, about 1.05 to about 1.1, about 1.1 to about 1.5, about 1.1 to about 1.4, about 1.1 to about 1.35, about 1.1 to about 1.3, about 1.1 to about 1.25, about 1.1 to about 1.2, about 1.15 to about 1.5, about 1.15 to about 1.4, about 1.15 to about 1.35, about 1.15 to about 1.3, about 1.15 to about 1.25, or about 1.15 to about 1.2.
  • the silicon boron nitride layer contains about 60 at % to about 80 at % of boron bonded to silicon and about 20 at % to about 40 at % of boron bonded to nitrogen.
  • the silicon boron nitride layer has a leakage current of less than 1 ⁇ 10 ⁇ 9 A/cm 2 at 1.5 MV/cm.
  • the silicon boron nitride layer has a leakage current of about 5 ⁇ 10 ⁇ 11 A/cm 2 , about 6 ⁇ 10 ⁇ 11 A/cm 2 , about 8 ⁇ 10 ⁇ 11 A/cm 2 , about 9 ⁇ 10 ⁇ 11 A/cm 2 , or about 1 ⁇ 10 ⁇ 10 A/cm 2 at 1.5 MV/cm to about 2 ⁇ 10 ⁇ 10 A/cm 2 , about 6 ⁇ 10 ⁇ 10 A/cm 2 , about 7.5 ⁇ 10 ⁇ 10 A/cm 2 , about 8 ⁇ 10 ⁇ 10 A/cm 2 , or about 9.9 ⁇ 10 ⁇ 10 A/cm 2 at 1.5 MV/cm.
  • the silicon boron nitride layer has a leakage current of about 5 ⁇ 10 ⁇ 11 A/cm 2 to about 9.9 ⁇ 10 ⁇ 10 A/cm 2 at 1.5 MV/cm or about 1 ⁇ 10 ⁇ 10 A/cm 2 to about 7 ⁇ 10 ⁇ 10 A/cm 2 at 1.5 MV/cm.
  • the silicon boron nitride layer contains about 10 at % to about 50 at % of boron, has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, and has a leakage current of less than 1 ⁇ 10 ⁇ 9 A/cm 2 at 1.5 MV/cm. In other examples, the silicon boron nitride layer contains about 20 at % to about 35 at % of boron, has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and has a leakage current of about 5 ⁇ 10 ⁇ 11 A/cm 2 to about 9.9 ⁇ 10 ⁇ 10 A/cm 2 at 1.5 MV/cm.
  • the silicon boron nitride layer has a thickness of about 50 ⁇ , about 80 ⁇ , about 100 ⁇ , about 120 ⁇ , or about 150 ⁇ to about 180 ⁇ , about 200 ⁇ , about 250 ⁇ , about 300 ⁇ , about 400 ⁇ , about 500 ⁇ , about 600 ⁇ , about 700 ⁇ , about 800 ⁇ , or about 1,000 ⁇ .
  • the silicon boron nitride layer has a thickness of about 50 ⁇ to about 1,000 ⁇ , about 50 ⁇ to about 800 ⁇ , about 50 ⁇ to about 600 ⁇ , about 50 ⁇ to about 500 ⁇ , about 50 ⁇ to about 400 ⁇ , about 50 ⁇ to about 300 ⁇ , about 50 ⁇ to about 200 ⁇ , about 50 ⁇ to about 150 ⁇ , about 50 ⁇ to about 100 ⁇ , about 50 ⁇ to about 80 ⁇ , about 80 ⁇ to about 1,000 ⁇ , about 80 ⁇ to about 800 ⁇ , about 80 ⁇ to about 600 ⁇ , about 80 ⁇ to about 800 ⁇ , about 80 ⁇ to about 400 ⁇ , about 80 ⁇ to about 300 ⁇ , about 80 ⁇ to about 200 ⁇ , about 80 ⁇ to about 150 ⁇ , about 80 ⁇ to about 100 ⁇ , about 100 ⁇ to about 1,000 ⁇ , about 100 ⁇ to about 800 ⁇ , about 100 ⁇ to about 600 ⁇ , about 100 ⁇ to about 1000 ⁇ , about 100 ⁇ to about
  • the silicon boron nitride layer is a stopper layer and has a thickness of about 50 ⁇ , about 80 ⁇ , about 100 ⁇ , about 120 ⁇ , or about 150 ⁇ to about 180 ⁇ , about 200 ⁇ , about 250 ⁇ , or about 300 ⁇ .
  • a stopper layer contains silicon boron nitride and has a thickness of about 50 ⁇ to about 300 ⁇ , about 100 ⁇ to about 200 ⁇ , or about 125 ⁇ to about 175 ⁇ .
  • the silicon boron nitride layer is a supporter layer and has a thickness of about 100 ⁇ , about 120 ⁇ , about 150 ⁇ , about 180 ⁇ , or about 200 ⁇ to about 220 ⁇ , about 250 ⁇ , about 280 ⁇ , about 300 ⁇ , about 350 ⁇ , about 400 ⁇ , about 450 ⁇ , about 500 ⁇ , or about 600 ⁇ .
  • a supporter layer contains silicon boron nitride and has a thickness of about 100 ⁇ to about 600 ⁇ , about 300 ⁇ to about 500 ⁇ , or about 350 ⁇ to about 450 ⁇ .
  • FIG. 1 is a schematic cross-sectional view of a process chamber 100 , such as a PE-CVD chamber, utilized during one or more methods for forming silicon boron nitride materials and layers.
  • the process chamber 100 includes a chamber body 102 coupled a vacuum pump 104 and an input manifold 106 coupled to a first gas source 108 and a second gas source 110 .
  • the chamber body 102 defines or otherwise contains a process region 112 that includes a pedestal 114 disposed therein to support a substrate 101 .
  • the pedestal 114 includes heating elements (not shown) and a mechanism (not shown) that retains the substrate 101 on the pedestal 114 , such as an electrostatic chuck, a vacuum chuck, a substrate retaining clamp, or the like.
  • the pedestal 114 is coupled to and movably disposed in the process region 112 by a stem 116 connected to a lift chamber (not shown) that moves the pedestal 114 between an elevated processing position and a lowered position that facilitates transfer of the substrate 101 to and from the process chamber 100 through an opening 118 of the chamber body 102 .
  • a first flow controller 120 such as a mass flow control (MFC) device, is disposed between the first gas source 108 and the input manifold 106 to control a first flow of a first process gases from the first gas source 108 to a showerhead assembly 124 , used for distributing the first process gases across the process region 112 .
  • the showerhead assembly can include a faceplate 121 , a blocker plate 123 , and a gas box 125 , as depicted in FIG. 1 .
  • the first and second process gases can be maintained separately through the input manifold 106 and subsequently combined just upstream of the gas box 125 .
  • a first flow of the first process gas via line 131 is transferred from the first gas source 108 through the input manifold 106
  • a second flow of the second process gas via line 133 is transferred from the second gas source 110 through the input manifold 106
  • both the first flow of the first process gas via line 131 and the second flow of the second process gas via line 133 are combined to produce a third flow of a third process gas via line 135 prior to being introduced into the gas box 125 and eventually into the process region 112 .
  • the third flow of the third process gas via line 135 can be maintained at a temperature low enough to keep some the precursors (e.g., diborane, silane, and/or ammonia) from reacting in the lines and causing dusting or particulate throughout the showerhead assembly 124 , the process region 112 , and/or on the substrate 101 .
  • the third flow of the third process gas via line 135 is maintained at a temperature of less than 165° C., such as about 20° C., about 25° C., about 35° C., about 50° C., about 65° C., about 90° C., or about 100° C.
  • the third flow of the third process gas via line 135 is maintained at a temperature of about 20° C. to less than 165° C., about 50° C. to less than 165° C., about 75° C. to less than 165° C., about 90° C. to less than 165° C., about 100° C. to less than 165° C., about 120° C. to less than 165° C., about 150° C. to less than 165° C., about 20° C. to about 160° C., about 50° C. to about 160° C., about 75° C.
  • about 90° C. to about 160° C. about 100° C. to about 160° C., about 120° C. to about 160° C., about 150° C. to about 160° C., about 20° C. to about 140° C., about 50° C. to about 140° C., about 75° C. to about 140° C., about 90° C. to about 140° C., about 100° C. to about 140° C., or about 120° C. to about 140° C.
  • the first process gas includes at least one or more silicon-containing precursors, one or more nitrogen-containing precursors, and one or more carrier and/or process gases (e.g., helium, argon, hydrogen, and/or nitrogen).
  • the first process gas includes silane (SiH 4 ), ammonia (NH 3 ), helium (He), nitrogen (N 2 ), argon (Ar), and hydrogen (H 2 ).
  • a second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of a second process gases from the second gas source 110 to the showerhead assembly 124 for distributing the second process gas across the process region 112 .
  • the second process gas includes at least one or more boron-containing precursors and hydrogen gas, such as a mixture of diborane (B 2 H 6 ) and hydrogen (H 2 ).
  • the showerhead assembly 124 is coupled to and in fluid communication with a remote plasma system (RPS) 105 .
  • the RPS 105 can be used to form a plasma in the process region 112 from the first and second process gases in the process region 112 .
  • the plasma is ignited or otherwise generated in the RPS 105 disposed outside of the chamber body 102 .
  • the plasma is transferred or otherwise introduced the process region 112 while depositing the silicon boron nitride layer on the substrate 101 .
  • a third gas source 128 can be coupled to the chamber body 102 for providing additional process gas (e.g., argon, helium, nitrogen, or combinations thereof) to control the pressure within the process region 112 .
  • a controller 130 is coupled to the process chamber 100 and configured to control process conditions of the process chamber 100 during a deposition process or other processes.
  • FIG. 2 is a schematic cross-sectional view of a process chamber 200 , such as a PE-CVD chamber, utilized for the method of forming the silicon boron nitride layer, as described and discussed herein by other embodiments.
  • the process chamber 200 includes the chamber body 102 coupled the vacuum pump 104 and the manifold 106 coupled to the first gas source 108 and the second gas source 110 .
  • the chamber body 102 defines or otherwise contains the process region 112 that includes the pedestal 114 disposed therein to support the substrate 101 .
  • the pedestal 114 includes heating elements (not shown) and a mechanism (not shown) that retains the substrate 101 on the pedestal 114 , such as an electrostatic chuck, a vacuum chuck, a substrate retaining clamp, or the like.
  • the pedestal 114 is coupled to and movably disposed in the process region 112 by the stem 116 connected to a lift chamber (not shown) that moves the pedestal 114 between an elevated processing position and a lowered position that facilitates transfer of the substrate 101 to and from the process chamber 200 through the opening 118 of the chamber body 102 .
  • the first flow controller 120 is disposed between the first gas source 108 and the input manifold 106 to control a first flow of a first process gases from the first gas source 108 to the showerhead assembly 124 , used for distributing the first process gases across the process region 112 .
  • the first process gas includes at least silane (SiH 4 ), ammonia (NH 3 ), helium (He), nitrogen (N 2 ), argon (Ar), and hydrogen (H 2 ).
  • the second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of a second process gases from the second gas source 110 to the showerhead assembly 124 for distributing the second process gas across the process region 112 .
  • the second process gas includes at least diborane (B 2 H 6 ) and hydrogen (H 2 ).
  • the showerhead assembly 124 is coupled to a radio frequency (RF) power source 126 for forming a plasma in the process region 112 from the first and second process gases in the process region 112 .
  • RF radio frequency
  • the third gas source 128 can be coupled to the chamber body 102 for providing additional process gas (e.g., argon, helium, nitrogen, or combinations thereof) to control the pressure within the process region 112 .
  • the controller 130 is coupled to the process chamber 200 and configured to control aspects of the process chamber 200 during processing.
  • FIG. 3 is a flow diagram of a method 300 of forming a silicon boron nitride layer. To facilitate explanation, FIG. 3 will be described with reference to Figures and 2 . However, it is to be noted that a chamber other than the process chamber 100 and 200 may be utilized in conjunction with the method 300 .
  • a substrate 101 is positioned in the process region 112 of the process chamber 100 , 200 .
  • the substrate 101 is positioned at a process distance between the pedestal 114 and the showerhead assembly 124 of about 100 mil (about 2.5 millimeter (mm)) to about 5,000 mil (about 127 mm) or about 200 mil (about 5 mm) to about 1,000 mil (about 25.4 mm).
  • the process region 112 is heated to a deposition temperature of about 575° C. or less.
  • the deposition temperature is maintained during the method 300 .
  • the process region 112 the deposition temperature of about 550° C. or less is obtained by heating the pedestal 114 .
  • the deposition temperature is about 225° C. to about 575° C.
  • the process region 112 during the method 300 is maintained at a pressure of about 2 Torr to about 8 Torr or about 3 Torr to about 6 Torr.
  • a first flow of the first process gases is provided to the process region 112 .
  • the first flow of the first process gas includes about 0 sccm to about 2,000 sccm or about 1 sccm to about 500 sccm of silane, about 0 sccm to about 1,000 sccm or about 10 sccm to about 5,000 sccm of ammonia, about 0 sccm to about 50,000 sccm or about 500 sccm to about 20,000 sccm of helium, about 0 sccm to about 50,000 sccm or about 5,000 sccm to about 25,000 sccm of nitrogen (N 2 ), about 0 sccm to about 50,000 sccm or about 50 sccm to about 10,000 sccm of argon, and about 0 sccm to about 50,000 sccm or about 50 sccm to about 10,000
  • the first flow of the first process gases is discontinued.
  • a plasma is formed concurrently with a second flow of the second process gases provided to the process region 112 .
  • plasma is introduced and/or generated in the process region 112 by the RPS 105 in process chamber 100 or by RF power provided from the RF power source 126 to the showerhead assembly 124 in process chamber 200 .
  • the second flow of the second process gas includes about 0 sccm to about 10,000 sccm or about 1 sccm to about 5,000 sccm of the second process gases.
  • the method 300 forms a silicon boron nitride layer having the boron concentration of about 10 at % to about 50 at % or about 10 at % to about 20 at % and the leakage current is less than 1 ⁇ 10 ⁇ 9 A/cm 2 at 1.5 MV/cm.
  • FIG. 4 depicts a capacitor device 400 containing one or more silicon boron nitride layers or materials which can be deposited or otherwise produced on a substrate by methods according to one or more embodiments described and discussed herein.
  • the capacitor device 400 is formed in a dielectric layer 402 disposed on the substrate.
  • the dielectric layer 402 can be or include one or more dielectric materials, such as silicon (e.g., amorphous silicon).
  • a nitride barrier layer 404 is disposed on the walls of the vias formed within the dielectric layer 402 , as well as disposed on metal contacts 406 .
  • the nitride barrier layer 404 contains one or more metal nitride materials, such as titanium nitride, tantalum nitride, tungsten nitride, silicides thereof, dopants thereof, or any combination thereof.
  • the metal contact 406 contains copper, tungsten, aluminum, chromium, cobalt, alloys thereof, or any combination thereof.
  • An oxide layer 410 is contained within the nitride barrier layer 404 and containing one or more holes or voids 408 defined by or otherwise formed in the oxide layer 410 .
  • the oxide layer can be or include silicon oxide or a dopant thereof.
  • a stopper layer 420 containing silicon boron nitride can be disposed in a lower portion of the capacitor device 400 , a supporter layer 422 containing silicon boron nitride can be disposed in a middle portion of the capacitor device 400 , a supporter layer 422 containing silicon boron nitride can be disposed in an upper portion of the capacitor device 400 , as depicted in FIG. 4 .
  • methods for forming the silicon boron nitride layer include positioning the substrate on the pedestal in the process region within the process chamber and introducing a first flow of a first process gas and a second flow of a second process gas to the process region.
  • the first flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen containing precursors, hydrogen (H 2 ), and at least two gases selected from argon, helium, nitrogen (N 2 ), or any combination thereof.
  • the method also includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.
  • methods for forming the silicon boron nitride layer include positioning the substrate on the pedestal in the process region within the process chamber, heating the pedestal retaining the substrate to a deposition temperature, maintaining the process region at a process pressure as described and discussed above, and introducing a first flow of a first process gas to the process region.
  • the first flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen containing precursors, helium, nitrogen (N 2 ), argon, and hydrogen (H 2 ).
  • the method further includes discontinuing the first flow of the first process gases, forming a plasma concurrently with a second flow of a second process gas containing one or more boron-containing precursors and hydrogen (H 2 ) to the process region, and forming the silicon boron nitride layer on the substrate.
  • a method of forming a silicon boron nitride layer having a boron concentration of about 20 at % to about 40 at % and a leakage current of less than 1 ⁇ 10 ⁇ 9 A/cm 2 at 1.5 MV/cm is provided.
  • the utilization of hydrogen gas allows for the formation of a nitrogen-rich, silicon-rich, and boron-rich layer. Hydrogen gas breaks Si—H bonds to remove in-layer hydrogen and create dangling bonds while process gases react with the active surface (e.g., the dangling bonds) of the substrate to create Si—Si bonds, Si—N bonds, and Si—B bonds.
  • Embodiments of the present disclosure further relate to any one or more of the following paragraphs 1-35:
  • a method of forming a silicon boron nitride layer comprising: positioning a substrate on a pedestal in a process region within a process chamber; heating a pedestal retaining the substrate to a deposition temperature of about 225° C. to about 575° C.; introducing a first flow of a first process gas and a second flow of a second process gas to the process region, wherein: the first flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen (N 2 ) having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H 2 ) having a flow rate of
  • a method of forming a silicon boron nitride layer comprising: positioning a substrate on a pedestal in a process region within a process chamber; introducing a first flow of a first process gas and a second flow of a second process gas to the process region, wherein: the first flow of the first process gas comprises a silicon-containing precursor, a nitrogen-containing precursor, hydrogen (H 2 ), and at least two gases selected from the group consisting of argon, helium, nitrogen (N 2 ), and any combination thereof, and the second flow of the second process gas comprises: about 2 molar percent (mol %) to about 15 mol % of diborane, about 85 mol % to about 98 mol % of hydrogen (H 2 ), and a flow rate of about 1 sccm to about 5,000 sccm; forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region; and exposing the substrate to the first process gas, the second process gas
  • a method of forming a silicon boron nitride layer comprising: positioning a substrate on a pedestal in a process region within a process chamber; heating a pedestal retaining the substrate to a deposition temperature of about 225° C. to about 575° C.; maintaining the process region at a pressure of about 2 Torr to about 8 Torr; introducing a first flow of a first process gas to the process region, wherein the first flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen (N 2 ) having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H 2 )
  • the silicon boron nitride layer comprises: about 60 at % to about 80 at % of boron bonded to silicon; and about 20 at % to about 40 at % of boron bonded to nitrogen.
  • the first flow of the first process gas comprises: the silane having a flow rate of about 10 sccm to about 250 sccm, the ammonia having a flow rate of about 50 sccm to about 2,000 sccm, the helium having a flow rate of about 750 sccm to about 15,000 sccm, the nitrogen having a flow rate of about 10,000 sccm to about 20,000 sccm, the argon having a flow rate of about 200 sccm to about 7,500 sccm, and the hydrogen having a flow rate of about 200 sccm to about 15,000 sccm.
  • the first flow of the first process gas comprises: the silane having a flow rate of about 20 sccm to about 100 sccm, the ammonia having a flow rate of about 100 sccm to about 1,000 sccm, the helium having a flow rate of about 1,000 sccm to about 10,000 sccm, the nitrogen having a flow rate of about 12,000 sccm to about 18,000 sccm, the argon having a flow rate of about 500 sccm to about 5,000 sccm, and the hydrogen having a flow rate of about 500 sccm to about 10,000 sccm.
  • the second flow of the second process gas comprises: about 3 mol % to about 12 mol % of the diborane, about 88 mol % to about 97 mol % of the hydrogen, and a flow rate of about 5 sccm to about 2,000 sccm.
  • the silicon boron nitride layer comprises about 20 at % to about 35 at % of boron, wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and wherein the silicon boron nitride layer has a leakage current of about 5 ⁇ 10 ⁇ 11 A/cm 2 to about 9.9 ⁇ 10 ⁇ 10 A/cm 2 at 1.5 MV/cm.
  • compositions, an element or a group of elements are preceded with the transitional phrase “comprising”, it is understood that we also contemplate the same composition or group of elements with transitional phrases “consisting essentially of,” “consisting of”, “selected from the group of consisting of,” or “is” preceding the recitation of the composition, element, or elements and vice versa.

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210140045A1 (en) * 2019-11-08 2021-05-13 Applied Materials, Inc. Methods to reduce material surface roughness
US20220077133A1 (en) * 2020-06-19 2022-03-10 Changxin Memory Technologies, Inc. Semiconductor device, capacitor device and manufacture method of capacitor device
US20220093390A1 (en) * 2020-09-18 2022-03-24 Applied Materials, Inc. Doping semiconductor films
WO2022266296A1 (en) * 2021-06-18 2022-12-22 Applied Materials, Inc. Processes for depositing sib films
US11869926B2 (en) * 2020-09-02 2024-01-09 Samsung Electronics Co., Ltd. High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same
US12451345B2 (en) 2019-01-02 2025-10-21 Applied Materials, Inc. PECVD of SiBN thin films with low leakage current

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515145B2 (en) * 2020-09-11 2022-11-29 Applied Materials, Inc. Deposition of silicon boron nitride films

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159124A (ja) * 1989-11-16 1991-07-09 Nec Corp 半導体装置の製造方法
DE69224640T2 (de) 1991-05-17 1998-10-01 Lam Res Corp VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT
US6066555A (en) 1995-12-22 2000-05-23 Cypress Semiconductor Corporation Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning
JPH1174485A (ja) 1997-06-30 1999-03-16 Toshiba Corp 半導体装置およびその製造方法
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6514880B2 (en) 1998-02-05 2003-02-04 Asm Japan K.K. Siloxan polymer film on semiconductor substrate and method for forming same
US6153541A (en) 1999-02-23 2000-11-28 Vanguard International Semiconductor Corporation Method for fabricating an oxynitride layer having anti-reflective properties and low leakage current
EP1123991A3 (en) 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes
US6630413B2 (en) 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
US6383868B1 (en) 2000-08-31 2002-05-07 Micron Technology, Inc. Methods for forming contact and container structures, and integrated circuit devices therefrom
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US6670237B1 (en) 2002-08-01 2003-12-30 Chartered Semiconductor Manufacturing Ltd. Method for an advanced MIM capacitor
US6730573B1 (en) 2002-11-01 2004-05-04 Chartered Semiconductor Manufacturing Ltd. MIM and metal resistor formation at CU beol using only one extra mask
US6924241B2 (en) * 2003-02-24 2005-08-02 Promos Technologies, Inc. Method of making a silicon nitride film that is transmissive to ultraviolet light
US7354852B2 (en) 2004-12-09 2008-04-08 Asm Japan K.K. Method of forming interconnection in semiconductor device
KR100724568B1 (ko) * 2005-10-12 2007-06-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
KR100825778B1 (ko) 2006-09-28 2008-04-29 삼성전자주식회사 듀얼 스트레스 라이너를 구비하는 반도체 소자의 제조방법
US8093128B2 (en) 2007-05-25 2012-01-10 Cypress Semiconductor Corporation Integration of non-volatile charge trap memory devices and logic CMOS devices
US7633125B2 (en) 2007-08-31 2009-12-15 Intel Corporation Integration of silicon boron nitride in high voltage and small pitch semiconductors
US20090098741A1 (en) * 2007-10-15 2009-04-16 Asm Japan K.K. Method for forming ultra-thin boron-containing nitride films and related apparatus
US7879681B2 (en) * 2008-10-06 2011-02-01 Samsung Electronics Co., Ltd. Methods of fabricating three-dimensional capacitor structures having planar metal-insulator-metal and vertical capacitors therein
JP2010251654A (ja) * 2009-04-20 2010-11-04 Elpida Memory Inc 成膜方法および半導体装置の製造方法
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
JP2010254654A (ja) 2009-04-28 2010-11-11 San Apro Kk スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体
AU2011256789A1 (en) 2010-02-02 2012-07-12 Applied Nanostructured Solutions, Llc Fiber containing parallel-aligned carbon nanotubes
US20130157466A1 (en) * 2010-03-25 2013-06-20 Keith Fox Silicon nitride films for semiconductor device applications
US20120142172A1 (en) 2010-03-25 2012-06-07 Keith Fox Pecvd deposition of smooth polysilicon films
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US9028924B2 (en) 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
KR101563541B1 (ko) * 2010-12-30 2015-10-27 어플라이드 머티어리얼스, 인코포레이티드 마이크로파 플라즈마를 이용한 박막 증착
JP5665627B2 (ja) * 2011-03-30 2015-02-04 東京エレクトロン株式会社 シリコン酸化物膜及びシリコン窒化物膜の積層方法、並びに成膜装置及び半導体装置の製造方法
US20120258261A1 (en) 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
JP5723243B2 (ja) 2011-08-11 2015-05-27 東京エレクトロン株式会社 成膜方法、これを含む半導体装置の製造方法、成膜装置、及び半導体装置
WO2013123143A1 (en) * 2012-02-14 2013-08-22 Novellus Systems, Inc. Silicon nitride films for semiconductor device applications
TW201341569A (zh) 2012-02-14 2013-10-16 Novellus Systems Inc 用於半導體元件應用之氮化矽膜
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
KR101934426B1 (ko) 2012-11-26 2019-01-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
KR101936036B1 (ko) 2013-02-08 2019-01-09 삼성전자 주식회사 커패시터 구조물
WO2014158448A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Enhancing uv compatibility of low k barrier film
JP6267080B2 (ja) * 2013-10-07 2018-01-24 東京エレクトロン株式会社 シリコン窒化物膜の成膜方法および成膜装置
US9331072B2 (en) 2014-01-28 2016-05-03 Samsung Electronics Co., Ltd. Integrated circuit devices having air-gap spacers defined by conductive patterns and methods of manufacturing the same
KR102182153B1 (ko) * 2014-08-27 2020-11-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
JP6746278B2 (ja) 2015-04-28 2020-08-26 芝浦機械株式会社 押出機用スクリュ並びに押出機および押出方法
CN108026637A (zh) * 2015-09-11 2018-05-11 弗萨姆材料美国有限责任公司 用于沉积保形的金属或准金属氮化硅膜的方法和所得的膜
US9892961B1 (en) 2016-08-09 2018-02-13 International Business Machines Corporation Air gap spacer formation for nano-scale semiconductor devices
KR102551237B1 (ko) * 2016-12-22 2023-07-03 어플라이드 머티어리얼스, 인코포레이티드 기저 구조 재료에 대한 직접적인 rf 노출 없이 등각성의 밀폐 유전체 캡슐화를 위한 sibn 필름
KR102557019B1 (ko) 2018-07-02 2023-07-20 삼성전자주식회사 반도체 메모리 소자
CN113316835B (zh) 2019-01-02 2025-08-19 应用材料公司 用于形成具有低漏电流的含硅硼膜的方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12451345B2 (en) 2019-01-02 2025-10-21 Applied Materials, Inc. PECVD of SiBN thin films with low leakage current
US11618949B2 (en) * 2019-11-08 2023-04-04 Applied Materials, Inc. Methods to reduce material surface roughness
US11939674B2 (en) 2019-11-08 2024-03-26 Applied Materials, Inc. Methods to reduce material surface roughness
US20210140045A1 (en) * 2019-11-08 2021-05-13 Applied Materials, Inc. Methods to reduce material surface roughness
US11749669B2 (en) * 2020-06-19 2023-09-05 Changxin Memory Technologies, Inc. Semiconductor device, capacitor device and manufacture method of capacitor device
US20220077133A1 (en) * 2020-06-19 2022-03-10 Changxin Memory Technologies, Inc. Semiconductor device, capacitor device and manufacture method of capacitor device
US11869926B2 (en) * 2020-09-02 2024-01-09 Samsung Electronics Co., Ltd. High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same
US20240088203A1 (en) 2020-09-02 2024-03-14 Samsung Electronics Co., Ltd. Electrical device and semiconductor apparatus including the same
US12414313B2 (en) 2020-09-02 2025-09-09 Samsung Electronics Co., Ltd. High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same
US11676813B2 (en) * 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
US20220093390A1 (en) * 2020-09-18 2022-03-24 Applied Materials, Inc. Doping semiconductor films
WO2022266296A1 (en) * 2021-06-18 2022-12-22 Applied Materials, Inc. Processes for depositing sib films
US12033848B2 (en) 2021-06-18 2024-07-09 Applied Materials, Inc. Processes for depositing sib films
US12482646B2 (en) 2021-06-18 2025-11-25 Applied Materials, Inc. Processes for depositing SiB films

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KR20250026878A (ko) 2025-02-25
CN120954965A (zh) 2025-11-14
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WO2020142307A1 (en) 2020-07-09
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