JP7518835B2 - 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法 - Google Patents

漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法 Download PDF

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JP7518835B2
JP7518835B2 JP2021538968A JP2021538968A JP7518835B2 JP 7518835 B2 JP7518835 B2 JP 7518835B2 JP 2021538968 A JP2021538968 A JP 2021538968A JP 2021538968 A JP2021538968 A JP 2021538968A JP 7518835 B2 JP7518835 B2 JP 7518835B2
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sccm
process gas
mol
flow
flow rate
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JPWO2020142307A5 (https=
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チュワンシ ヤン，
ハン ユイ，
サンジャイ カマス，
ディーネッシュ パディ，
ホングン キム，
ウンジュ リー，
ツーピン ホアン，
ディワカール エヌ． ケッドラヤ，
ルイ チェン，
カーティック ジャナキラマン，
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Applied Materials Inc
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JP2021538968A 2019-01-02 2019-12-23 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法 Active JP7518835B2 (ja)

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PCT/US2019/068270 WO2020142307A1 (en) 2019-01-02 2019-12-23 Methods for forming films containing silicon boron with low leakage current

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CN113316835B (zh) 2019-01-02 2025-08-19 应用材料公司 用于形成具有低漏电流的含硅硼膜的方法
KR102748790B1 (ko) 2019-11-08 2024-12-30 어플라이드 머티어리얼스, 인코포레이티드 재료 표면 거칠기를 감소시키기 위한 방법들
CN113823630B (zh) * 2020-06-19 2024-02-13 长鑫存储技术有限公司 半导体器件、电容装置及电容装置的制造方法
KR102764319B1 (ko) 2020-09-02 2025-02-07 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 장치
US11515145B2 (en) * 2020-09-11 2022-11-29 Applied Materials, Inc. Deposition of silicon boron nitride films
US11676813B2 (en) * 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
US12033848B2 (en) 2021-06-18 2024-07-09 Applied Materials, Inc. Processes for depositing sib films

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20090098741A1 (en) 2007-10-15 2009-04-16 Asm Japan K.K. Method for forming ultra-thin boron-containing nitride films and related apparatus
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