TW202444950A - 用於形成具有低漏電流的含矽硼膜之方法 - Google Patents

用於形成具有低漏電流的含矽硼膜之方法 Download PDF

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TW202444950A
TW202444950A TW113127292A TW113127292A TW202444950A TW 202444950 A TW202444950 A TW 202444950A TW 113127292 A TW113127292 A TW 113127292A TW 113127292 A TW113127292 A TW 113127292A TW 202444950 A TW202444950 A TW 202444950A
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sccm
layer
boron nitride
silicon
mol
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TW113127292A
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Chinese (zh)
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楊傳曦
航 于
山傑 卡瑪斯
迪尼斯 帕奇
金弘根
銀基 李
黃祖濱
狄瓦卡N 凱德拉雅
程睿
卡希克 加納基拉曼
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美商應用材料股份有限公司
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    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Chemical & Material Sciences (AREA)
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  • Metallurgy (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW113127292A 2019-01-02 2020-01-02 用於形成具有低漏電流的含矽硼膜之方法 TW202444950A (zh)

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US (2) US20200211834A1 (https=)
JP (2) JP7518835B2 (https=)
KR (2) KR102769720B1 (https=)
CN (2) CN113316835B (https=)
SG (1) SG11202107157RA (https=)
TW (2) TW202444950A (https=)
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WO2021091835A1 (en) 2019-11-08 2021-05-14 Applied Materials, Inc. Methods to reduce material surface roughness
CN113823630B (zh) * 2020-06-19 2024-02-13 长鑫存储技术有限公司 半导体器件、电容装置及电容装置的制造方法
KR102764319B1 (ko) 2020-09-02 2025-02-07 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 장치
US11515145B2 (en) * 2020-09-11 2022-11-29 Applied Materials, Inc. Deposition of silicon boron nitride films
US11676813B2 (en) * 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
US12033848B2 (en) 2021-06-18 2024-07-09 Applied Materials, Inc. Processes for depositing sib films

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