KR102769720B1 - 낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들 - Google Patents

낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들 Download PDF

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KR102769720B1
KR102769720B1 KR1020217024206A KR20217024206A KR102769720B1 KR 102769720 B1 KR102769720 B1 KR 102769720B1 KR 1020217024206 A KR1020217024206 A KR 1020217024206A KR 20217024206 A KR20217024206 A KR 20217024206A KR 102769720 B1 KR102769720 B1 KR 102769720B1
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sccm
boron nitride
nitride layer
flow
silicon boron
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KR20210099175A (ko
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추안시 양
항 유
산제이 카마스
디네쉬 패디
홍군 김
은기 이
주빈 후앙
디와카 엔. 케들라야
루이 쳉
카르틱 자나키라만
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/0217—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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  • Chemical & Material Sciences (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020217024206A 2019-01-02 2019-12-23 낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들 Active KR102769720B1 (ko)

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KR1020257004529A KR20250026878A (ko) 2019-01-02 2019-12-23 낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들

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Application Number Priority Date Filing Date Title
US201962787666P 2019-01-02 2019-01-02
US62/787,666 2019-01-02
PCT/US2019/068270 WO2020142307A1 (en) 2019-01-02 2019-12-23 Methods for forming films containing silicon boron with low leakage current

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KR1020257004529A Division KR20250026878A (ko) 2019-01-02 2019-12-23 낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들

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KR102769720B1 true KR102769720B1 (ko) 2025-02-17

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KR1020257004529A Pending KR20250026878A (ko) 2019-01-02 2019-12-23 낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들

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US (2) US20200211834A1 (https=)
JP (2) JP7518835B2 (https=)
KR (2) KR102769720B1 (https=)
CN (2) CN113316835B (https=)
SG (1) SG11202107157RA (https=)
TW (2) TW202444950A (https=)
WO (1) WO2020142307A1 (https=)

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CN113316835B (zh) 2019-01-02 2025-08-19 应用材料公司 用于形成具有低漏电流的含硅硼膜的方法
WO2021091835A1 (en) 2019-11-08 2021-05-14 Applied Materials, Inc. Methods to reduce material surface roughness
CN113823630B (zh) * 2020-06-19 2024-02-13 长鑫存储技术有限公司 半导体器件、电容装置及电容装置的制造方法
KR102764319B1 (ko) 2020-09-02 2025-02-07 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 장치
US11515145B2 (en) * 2020-09-11 2022-11-29 Applied Materials, Inc. Deposition of silicon boron nitride films
US11676813B2 (en) * 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
US12033848B2 (en) 2021-06-18 2024-07-09 Applied Materials, Inc. Processes for depositing sib films

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