KR100550338B1 - 박막증착방법 및 그에 의하여 제조되는 웨이퍼의 박막구조체 - Google Patents
박막증착방법 및 그에 의하여 제조되는 웨이퍼의 박막구조체 Download PDFInfo
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- KR100550338B1 KR100550338B1 KR1020030092617A KR20030092617A KR100550338B1 KR 100550338 B1 KR100550338 B1 KR 100550338B1 KR 1020030092617 A KR1020030092617 A KR 1020030092617A KR 20030092617 A KR20030092617 A KR 20030092617A KR 100550338 B1 KR100550338 B1 KR 100550338B1
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract
Description
Claims (13)
- 삭제
- 삭제
- 웨이퍼(w) 상에 Hf 원소를 포함하는 박막을 증착하기 전 단계로서, 상기 박막의 Hf 와 상기 웨이퍼(w)의 Si 이 반응되지 않도록 하기 위한 베리어(barrier)막을 상기 웨이퍼(w)상에 형성하는 전처리단계를 포함하고,상기 전처리단계는, Al 원소를 포함하는 제3반응물과 N 원소를 포함하는 제2반응물을 이용하여 상기 웨이퍼상에 알루미늄질화막(AlN)을 형성하는 단계인 것을 특징으로 하는 박막증착방법.
- 제3항에 항에 있어서,상기 전처리단계는 CVD 또는 ALD 법에 의하여 수행되는 것을 특징으로 하는 박막증착방법.
- 삭제
- 웨이퍼(w) 상에 Hf 원소를 포함하는 박막을 증착하기 전 단계로서, 상기 박막의 Hf 와 상기 웨이퍼(w)의 Si 이 반응되지 않도록 하기 위한 베리어(barrier)막을 상기 웨이퍼(w)상에 형성하는 전처리단계를 포함하고,상기 전처리단계는, AlN 기판을 이용한 스퍼터링법에 의하여 상기 웨이퍼상에 AlN 질화막을 형성하는 단계인 것을 특징으로 하는 박막증착방법.
- 웨이퍼(w) 상에 Hf 원소를 포함하는 박막을 증착하기 전 단계로서, 상기 박막의 Hf 와 상기 웨이퍼(w)의 Si 이 반응되지 않도록 하기 위한 베리어(barrier)막을 상기 웨이퍼(w)상에 형성하는 전처리단계를 포함하고,상기 전처리단계는, Si 원소를 포함하는 제1반응물과, Hf 원소를 포함하는 제4반응물과, O 원소를 포함하는 제5반응물을 이용하여 상기 웨이퍼상에 하프늄실리케이트(HfSiOx) 막을 형성하는 단계인 것을 특징으로 하는 박막증착방법.
- 웨이퍼(w) 상에 Hf 원소를 포함하는 박막을 증착하기 전 단계로서, 상기 박막의 Hf 와 상기 웨이퍼(w)의 Si 이 반응되지 않도록 하기 위한 베리어(barrier)막을 상기 웨이퍼(w)상에 형성하는 전처리단계를 포함하고,상기 전처리단계는, N 원소를 포함하는 제2반응물과 Hf 원소를 포함하는 제4반응물을 이용하여 상기 웨이퍼상에 하프늄질화막(HfN)을 형성하는 단계인 것을 특징으로 하는 박막증착방법.
- 제8항에 있어서,상기 전처리단계는 CVD 또는 ALD 법에 의하여 수행되는 것을 특징으로 하는 박막증착방법.
- 웨이퍼(w) 상에 Hf 원소를 포함하는 박막을 증착하기 전 단계로서, 상기 박막의 Hf 와 상기 웨이퍼(w)의 Si 이 반응되지 않도록 하기 위한 베리어(barrier)막을 상기 웨이퍼(w)상에 형성하는 전처리단계를 포함하고,상기 전처리단계는, HfSiOx 또는 HfN 기판을 이용한 스퍼터링법에 의하여 상기 웨이퍼상에 HfSiOx 막 또는 HfN 질화막을 형성하는 단계인 것을 특징으로 하는 박막증착방법.
- 웨이퍼(w)와 Hf 원소를 포함하는 박막 사이에 형성되는 것으로서, 상기 박막의 Hf 와 상기 웨이퍼(w)의 Si 이 반응되지 않도록 하는 베리어(barrier)막을 포함하고,상기 베리어막은 하프늄질화막(HfN) 또는 알루미늄질화막(AlN)인 것을 특징으로 하는 웨이퍼의 박막구조체.
- 삭제
- 삭제
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KR20210068870A (ko) | 2019-12-02 | 2021-06-10 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
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KR100648375B1 (ko) * | 2005-08-04 | 2006-11-24 | 주식회사 아이피에스 | HfSiON 박막증착방법 |
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KR20020034710A (ko) * | 2000-11-03 | 2002-05-09 | 박종섭 | 하프늄 산화막과 전도층의 반응을 억제할 수 있는 반도체장치 제조 방법 |
KR100345671B1 (en) * | 2000-10-31 | 2002-07-24 | Hynix Semiconductor Inc | Method for forming hafnium oxide layer |
KR20030054067A (ko) * | 2001-12-24 | 2003-07-02 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성 방법 |
KR20040032351A (ko) * | 2002-10-09 | 2004-04-17 | 삼성전자주식회사 | 반도체 장치에서 커패시터 형성 방법 |
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KR100345671B1 (en) * | 2000-10-31 | 2002-07-24 | Hynix Semiconductor Inc | Method for forming hafnium oxide layer |
KR20020034710A (ko) * | 2000-11-03 | 2002-05-09 | 박종섭 | 하프늄 산화막과 전도층의 반응을 억제할 수 있는 반도체장치 제조 방법 |
KR20030054067A (ko) * | 2001-12-24 | 2003-07-02 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성 방법 |
KR20040032351A (ko) * | 2002-10-09 | 2004-04-17 | 삼성전자주식회사 | 반도체 장치에서 커패시터 형성 방법 |
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KR20210068870A (ko) | 2019-12-02 | 2021-06-10 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
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