TWI847197B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI847197B
TWI847197B TW111127569A TW111127569A TWI847197B TW I847197 B TWI847197 B TW I847197B TW 111127569 A TW111127569 A TW 111127569A TW 111127569 A TW111127569 A TW 111127569A TW I847197 B TWI847197 B TW I847197B
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TW
Taiwan
Prior art keywords
layer
barrier layer
electrode
semiconductor device
field plate
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TW111127569A
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English (en)
Chinese (zh)
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TW202306173A (zh
Inventor
神田裕介
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日商新唐科技日本股份有限公司
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Publication of TW202306173A publication Critical patent/TW202306173A/zh
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Publication of TWI847197B publication Critical patent/TWI847197B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW111127569A 2021-07-27 2022-07-22 半導體裝置 TWI847197B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-122144 2021-07-27
JP2021122144 2021-07-27

Publications (2)

Publication Number Publication Date
TW202306173A TW202306173A (zh) 2023-02-01
TWI847197B true TWI847197B (zh) 2024-07-01

Family

ID=85086926

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111127569A TWI847197B (zh) 2021-07-27 2022-07-22 半導體裝置

Country Status (6)

Country Link
US (1) US12142677B2 (cg-RX-API-DMAC7.html)
EP (1) EP4379810B1 (cg-RX-API-DMAC7.html)
JP (1) JP7448728B2 (cg-RX-API-DMAC7.html)
CN (1) CN117769762B (cg-RX-API-DMAC7.html)
TW (1) TWI847197B (cg-RX-API-DMAC7.html)
WO (1) WO2023008308A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114127954B (zh) * 2021-08-11 2023-07-07 英诺赛科(苏州)科技有限公司 半导体装置及其制造方法
JP7740799B2 (ja) * 2021-09-27 2025-09-17 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
US12408365B2 (en) * 2022-11-28 2025-09-02 Nxp Usa, Inc. Heterostructure transistor gate with diffusion barrier
TWI921769B (zh) * 2023-03-30 2026-04-11 日商新唐科技日本股份有限公司 半導體裝置及半導體裝置的製造方法
TWI905579B (zh) * 2023-11-28 2025-11-21 台亞半導體股份有限公司 半導體結構
TWI905641B (zh) * 2024-01-23 2025-11-21 新唐科技股份有限公司 半導體裝置及其形成方法
TWI913896B (zh) 2024-09-12 2026-02-01 國立中山大學 半導體裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10355045B1 (en) * 2017-12-29 2019-07-16 Spin Memory, Inc. Three dimensional perpendicular magnetic junction with thin-film transistor
TWI681561B (zh) * 2017-05-23 2020-01-01 財團法人工業技術研究院 氮化鎵電晶體元件之結構及其製造方法
US20200051823A1 (en) * 2018-08-07 2020-02-13 Stimicroelectronics S.R.L. Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

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Publication number Priority date Publication date Assignee Title
JP4221697B2 (ja) 2002-06-17 2009-02-12 日本電気株式会社 半導体装置
JP4547933B2 (ja) * 2003-02-19 2010-09-22 日亜化学工業株式会社 窒化物半導体素子
JP4841844B2 (ja) 2005-01-05 2011-12-21 三菱電機株式会社 半導体素子
JP4866007B2 (ja) 2005-01-14 2012-02-01 富士通株式会社 化合物半導体装置
US7973304B2 (en) 2007-02-06 2011-07-05 International Rectifier Corporation III-nitride semiconductor device
JP2008277640A (ja) * 2007-05-02 2008-11-13 Toshiba Corp 窒化物半導体素子
JP2008305816A (ja) * 2007-06-05 2008-12-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP5462161B2 (ja) 2007-07-20 2014-04-02 アイメック Ｉｉｉ−ｖ族ｍｅｓｆｅｔでのダマシンコンタクト製造方法
KR101666910B1 (ko) 2009-04-08 2016-10-17 이피션트 파워 컨버젼 코퍼레이션 증가형 ＧａＮ ＨＥＭＴ 장치 및 그 제조 방법
JP2013149851A (ja) * 2012-01-20 2013-08-01 Sharp Corp 窒化物半導体装置
JP5662367B2 (ja) 2012-03-26 2015-01-28 株式会社東芝 窒化物半導体装置およびその製造方法
JP2014072388A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
US8900985B2 (en) 2012-10-15 2014-12-02 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
JP2014099523A (ja) 2012-11-15 2014-05-29 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタおよびその製造方法
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WO2016157371A1 (ja) * 2015-03-30 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6650867B2 (ja) * 2016-12-22 2020-02-19 三菱電機株式会社 ヘテロ接合電界効果型トランジスタの製造方法

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Publication number Priority date Publication date Assignee Title
TWI681561B (zh) * 2017-05-23 2020-01-01 財團法人工業技術研究院 氮化鎵電晶體元件之結構及其製造方法
US10355045B1 (en) * 2017-12-29 2019-07-16 Spin Memory, Inc. Three dimensional perpendicular magnetic junction with thin-film transistor
US20200051823A1 (en) * 2018-08-07 2020-02-13 Stimicroelectronics S.R.L. Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

Also Published As

Publication number Publication date
TW202306173A (zh) 2023-02-01
EP4379810B1 (en) 2026-04-08
EP4379810A1 (en) 2024-06-05
JP7448728B2 (ja) 2024-03-12
CN117769762B (zh) 2024-10-18
EP4379810A4 (en) 2024-09-04
US20240266428A1 (en) 2024-08-08
WO2023008308A1 (ja) 2023-02-02
JPWO2023008308A1 (cg-RX-API-DMAC7.html) 2023-02-02
CN117769762A (zh) 2024-03-26
US12142677B2 (en) 2024-11-12

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