JPWO2023008308A1 - - Google Patents

Info

Publication number
JPWO2023008308A1
JPWO2023008308A1 JP2023538480A JP2023538480A JPWO2023008308A1 JP WO2023008308 A1 JPWO2023008308 A1 JP WO2023008308A1 JP 2023538480 A JP2023538480 A JP 2023538480A JP 2023538480 A JP2023538480 A JP 2023538480A JP WO2023008308 A1 JPWO2023008308 A1 JP WO2023008308A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023538480A
Other languages
Japanese (ja)
Other versions
JP7448728B2 (ja
JPWO2023008308A5 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023008308A1 publication Critical patent/JPWO2023008308A1/ja
Publication of JPWO2023008308A5 publication Critical patent/JPWO2023008308A5/ja
Application granted granted Critical
Publication of JP7448728B2 publication Critical patent/JP7448728B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2023538480A 2021-07-27 2022-07-21 半導体装置 Active JP7448728B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021122144 2021-07-27
JP2021122144 2021-07-27
PCT/JP2022/028359 WO2023008308A1 (ja) 2021-07-27 2022-07-21 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023008308A1 true JPWO2023008308A1 (cg-RX-API-DMAC7.html) 2023-02-02
JPWO2023008308A5 JPWO2023008308A5 (cg-RX-API-DMAC7.html) 2024-01-04
JP7448728B2 JP7448728B2 (ja) 2024-03-12

Family

ID=85086926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023538480A Active JP7448728B2 (ja) 2021-07-27 2022-07-21 半導体装置

Country Status (6)

Country Link
US (1) US12142677B2 (cg-RX-API-DMAC7.html)
EP (1) EP4379810B1 (cg-RX-API-DMAC7.html)
JP (1) JP7448728B2 (cg-RX-API-DMAC7.html)
CN (1) CN117769762B (cg-RX-API-DMAC7.html)
TW (1) TWI847197B (cg-RX-API-DMAC7.html)
WO (1) WO2023008308A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114127954B (zh) * 2021-08-11 2023-07-07 英诺赛科(苏州)科技有限公司 半导体装置及其制造方法
JP7740799B2 (ja) * 2021-09-27 2025-09-17 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
US12408365B2 (en) * 2022-11-28 2025-09-02 Nxp Usa, Inc. Heterostructure transistor gate with diffusion barrier
TWI921769B (zh) * 2023-03-30 2026-04-11 日商新唐科技日本股份有限公司 半導體裝置及半導體裝置的製造方法
TWI905579B (zh) * 2023-11-28 2025-11-21 台亞半導體股份有限公司 半導體結構
TWI905641B (zh) * 2024-01-23 2025-11-21 新唐科技股份有限公司 半導體裝置及其形成方法
TWI913896B (zh) 2024-09-12 2026-02-01 國立中山大學 半導體裝置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517302A (ja) * 2007-02-06 2010-05-20 インターナショナル レクティフィアー コーポレイション Ｉｉｉ族窒化物半導体デバイス
JP2010533987A (ja) * 2007-07-20 2010-10-28 アイメック Ｉｉｉ−ｖ族ｃｍｏｓデバイスでのダマシンコンタクト
JP2012523697A (ja) * 2009-04-08 2012-10-04 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法
US20140106516A1 (en) * 2012-10-15 2014-04-17 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
JP2014072388A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014099523A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタおよびその製造方法
US20200051823A1 (en) * 2018-08-07 2020-02-13 Stimicroelectronics S.R.L. Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221697B2 (ja) 2002-06-17 2009-02-12 日本電気株式会社 半導体装置
JP4547933B2 (ja) * 2003-02-19 2010-09-22 日亜化学工業株式会社 窒化物半導体素子
JP4841844B2 (ja) 2005-01-05 2011-12-21 三菱電機株式会社 半導体素子
JP4866007B2 (ja) 2005-01-14 2012-02-01 富士通株式会社 化合物半導体装置
JP2008277640A (ja) * 2007-05-02 2008-11-13 Toshiba Corp 窒化物半導体素子
JP2008305816A (ja) * 2007-06-05 2008-12-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2013149851A (ja) * 2012-01-20 2013-08-01 Sharp Corp 窒化物半導体装置
JP5662367B2 (ja) 2012-03-26 2015-01-28 株式会社東芝 窒化物半導体装置およびその製造方法
US20150152543A1 (en) 2013-10-30 2015-06-04 Skyworks Solutions, Inc. Systems, devices and methods related to reactive evaporation of refractory materials
WO2016157371A1 (ja) * 2015-03-30 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6650867B2 (ja) * 2016-12-22 2020-02-19 三菱電機株式会社 ヘテロ接合電界効果型トランジスタの製造方法
TWI681561B (zh) * 2017-05-23 2020-01-01 財團法人工業技術研究院 氮化鎵電晶體元件之結構及其製造方法
US10355045B1 (en) * 2017-12-29 2019-07-16 Spin Memory, Inc. Three dimensional perpendicular magnetic junction with thin-film transistor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517302A (ja) * 2007-02-06 2010-05-20 インターナショナル レクティフィアー コーポレイション Ｉｉｉ族窒化物半導体デバイス
JP2010533987A (ja) * 2007-07-20 2010-10-28 アイメック Ｉｉｉ−ｖ族ｃｍｏｓデバイスでのダマシンコンタクト
JP2012523697A (ja) * 2009-04-08 2012-10-04 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法
JP2014072388A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
US20140106516A1 (en) * 2012-10-15 2014-04-17 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
JP2014099523A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタおよびその製造方法
US20200051823A1 (en) * 2018-08-07 2020-02-13 Stimicroelectronics S.R.L. Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

Also Published As

Publication number Publication date
TW202306173A (zh) 2023-02-01
EP4379810B1 (en) 2026-04-08
EP4379810A1 (en) 2024-06-05
JP7448728B2 (ja) 2024-03-12
TWI847197B (zh) 2024-07-01
CN117769762B (zh) 2024-10-18
EP4379810A4 (en) 2024-09-04
US20240266428A1 (en) 2024-08-08
WO2023008308A1 (ja) 2023-02-02
CN117769762A (zh) 2024-03-26
US12142677B2 (en) 2024-11-12

Similar Documents

Publication Publication Date Title
BR102021007058A2 (cg-RX-API-DMAC7.html)
BR112024002663B1 (pt) Equipamento de usuário, método de um equipamento de usuário, equipamento de rede e método de um equipamento de rede
BR102021013306B1 (pt) Disposição introduzida em forno de pizza, com dispostivo de regulagem de altura da esteira com ajustes gradual escalonado
BR102021010384B1 (pt) Equipamento para limpeza e/ou teste de bicos injetores com alta pressão
BR102021009961B1 (pt) Sistema e método para aproveitamento da água de injeção dessulfatada de plataformas marítimas para utilização em squeezes de inibição
BR102021007825B1 (pt) Equipamento de entretenimento e contemplação visual por cabines rotacionais e com giro radial e axial de 360 graus, para instalação em coberturas de edificações, penhascos ou encostas de elevações geográficas abissais
BR102021006565B1 (pt) Máquina de acabamento de estradas e método para operar a mesma
BR102021005700B1 (pt) Selo irregular para redução de ruído em aeronaves
BR102021005383B1 (pt) Método de perfurar um furo de poço marítimo com circulação reversa de fluido sem uso de tubulares de riser de perfuração
BR102021004908B1 (pt) Equipamento gerador de dióxido de cloro com processamento em alta pressão em reator com três zonas de operação para tratamento de águas e efluentes
BR102021003589B1 (pt) Método para fabricar uma estrutura monolítica em formato de caixa para fuselagens e asas de aeronave usando um material prepreg de matriz de polímero reforçada com fibra
BR102021003353B1 (pt) Aerofólio compósito estrutural, aeronave e método de montagem de um aerofólio compósito estrutural
BR102021000474B1 (pt) Aparelho de pino de medição, sistema de amortecimento multiator, e, conjunto de amortecedor de impacto
BR102020026775B1 (pt) Montagem de painel de malha de arame soldado e uma ou mais armações, e parede ou teto reforçado por uma ou mais montagens
BR102020026454B1 (pt) Membrana de nanocelulose bacteriana e seu uso como bolus em radioterapia
BR102020026302B1 (pt) Processo de produção de corante natural azul
BR102020023974B1 (pt) Revestimento de amarras para redução de arrasto longitudinal
BR102020021170B1 (pt) Composição, formulações orais e uso
BR102020018864B1 (pt) Grade de ventilação modular
BR102020018483B1 (pt) Dispositivo mecânico para arraste de cabeçote móvel para realização de furos, alargamentos, roscas com machos por intermédio de automatização em tornos mecânicos horizontais
BR102020010912B1 (pt) Aparelho compacto de eletrólise de baixo custo
BR102020007524B1 (pt) Sistema de montagem e controle de acumuladores em estações de trabalho
BR102020005641B1 (pt) Método integrado de cultura do peixe lambari-do-rabo-amarelo, camarão-da-amazônia e o peixe curimbatá
BR102020004560B1 (pt) Rotor eólico utilizando duplas-pás inteiriças para geração de potência
BR102020003823B1 (pt) Distribuidor de corretivos, fertilizantes e sementes

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231108

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20231108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240206

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240229

R150 Certificate of patent or registration of utility model

Ref document number: 7448728

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150