TWI844141B - 兩面曝光裝置 - Google Patents

兩面曝光裝置 Download PDF

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Publication number
TWI844141B
TWI844141B TW111139385A TW111139385A TWI844141B TW I844141 B TWI844141 B TW I844141B TW 111139385 A TW111139385 A TW 111139385A TW 111139385 A TW111139385 A TW 111139385A TW I844141 B TWI844141 B TW I844141B
Authority
TW
Taiwan
Prior art keywords
mask
calibration
substrate
mark
opening
Prior art date
Application number
TW111139385A
Other languages
English (en)
Chinese (zh)
Other versions
TW202307590A (zh
Inventor
名古屋淳
Original Assignee
日商亞多特克工程股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商亞多特克工程股份有限公司 filed Critical 日商亞多特克工程股份有限公司
Publication of TW202307590A publication Critical patent/TW202307590A/zh
Application granted granted Critical
Publication of TWI844141B publication Critical patent/TWI844141B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Separation By Low-Temperature Treatments (AREA)
TW111139385A 2017-10-31 2018-10-29 兩面曝光裝置 TWI844141B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-210651 2017-10-31
JP2017210651A JP7412872B2 (ja) 2017-10-31 2017-10-31 両面露光装置

Publications (2)

Publication Number Publication Date
TW202307590A TW202307590A (zh) 2023-02-16
TWI844141B true TWI844141B (zh) 2024-06-01

Family

ID=66295477

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107138123A TWI782124B (zh) 2017-10-31 2018-10-29 兩面曝光裝置
TW111139385A TWI844141B (zh) 2017-10-31 2018-10-29 兩面曝光裝置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107138123A TWI782124B (zh) 2017-10-31 2018-10-29 兩面曝光裝置

Country Status (4)

Country Link
JP (2) JP7412872B2 (enExample)
KR (1) KR102603530B1 (enExample)
CN (1) CN109725501B (enExample)
TW (2) TWI782124B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP2021033018A (ja) * 2019-08-22 2021-03-01 大日本印刷株式会社 露光方法及び露光方法を備える蒸着マスク製造方法並びに露光装置
JP7458950B2 (ja) * 2020-09-23 2024-04-01 株式会社Ｓｃｒｅｅｎホールディングス 描画システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007121425A (ja) * 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3034273B2 (ja) * 1989-10-07 2000-04-17 株式会社東芝 露光方法及び露光装置
JP2600027B2 (ja) * 1991-05-16 1997-04-16 日立テクノエンジニアリング株式会社 画像位置合わせ方法およびその装置
JPH08181062A (ja) * 1994-12-22 1996-07-12 Nikon Corp 位置決め装置及び位置決め方法
JPH1022201A (ja) * 1996-07-04 1998-01-23 Nikon Corp アライメントマーク検出装置
JPH1154407A (ja) * 1997-08-05 1999-02-26 Nikon Corp 位置合わせ方法
JP2000099159A (ja) 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP3316676B2 (ja) * 1998-09-18 2002-08-19 株式会社オーク製作所 ワークとマスクの整合機構および整合方法
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP2000305274A (ja) 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP3376961B2 (ja) 1999-06-08 2003-02-17 ウシオ電機株式会社 マスクを移動させて位置合わせを行う露光装置
JP2004279166A (ja) 2003-03-14 2004-10-07 Canon Inc 位置検出装置
JP4218418B2 (ja) * 2003-05-23 2009-02-04 ウシオ電機株式会社 帯状ワークの両面投影露光装置
WO2005116577A1 (ja) 2004-05-28 2005-12-08 Nikon Corporation 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ－ク識別装置及びエッジ位置検出装置
JP2006084783A (ja) * 2004-09-16 2006-03-30 Nsk Ltd 両面露光装置のマスクアライメント方法及びマスクアライメント装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP5538048B2 (ja) * 2010-04-22 2014-07-02 日東電工株式会社 アライメントマークの検出方法および配線回路基板の製造方法
JP2012234021A (ja) * 2011-04-28 2012-11-29 Hitachi High-Technologies Corp プロキシミティ露光装置、プロキシミティ露光装置のアライメント方法、及び表示用パネル基板の製造方法
JP2016180868A (ja) * 2015-03-24 2016-10-13 富士フイルム株式会社 露光用治具および露光方法
WO2017094770A1 (ja) * 2015-11-30 2017-06-08 株式会社ニコン 露光装置、露光システム、基板処理方法、および、デバイス製造装置
JP5997409B1 (ja) * 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007121425A (ja) * 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
TW201923485A (zh) 2019-06-16
TW202307590A (zh) 2023-02-16
JP2023014353A (ja) 2023-01-26
JP2019082611A (ja) 2019-05-30
KR20190049562A (ko) 2019-05-09
CN109725501B (zh) 2023-06-30
JP7412872B2 (ja) 2024-01-15
TWI782124B (zh) 2022-11-01
JP7430768B2 (ja) 2024-02-13
CN109725501A (zh) 2019-05-07
KR102603530B1 (ko) 2023-11-17

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