TWI841559B - 捲狀膜、捲狀膜之製造方法、覆銅積層體之製造方法、及印刷基板之製造方法 - Google Patents
捲狀膜、捲狀膜之製造方法、覆銅積層體之製造方法、及印刷基板之製造方法 Download PDFInfo
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- TWI841559B TWI841559B TW108113751A TW108113751A TWI841559B TW I841559 B TWI841559 B TW I841559B TW 108113751 A TW108113751 A TW 108113751A TW 108113751 A TW108113751 A TW 108113751A TW I841559 B TWI841559 B TW I841559B
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- film
- fluororesin
- manufacturing
- roll film
- copper
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
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- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
- C08F2800/10—Copolymer characterised by the proportions of the comonomers expressed as molar percentages
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Abstract
本發明提供一種介電質薄膜,其適合用於製造高精度的印刷基板,且介電特性與在電蝕試驗中之穩定性優異。
一種捲狀膜,係以熱熔融性氟樹脂為主成分且厚度為1~100μm;該捲狀膜在150℃下加熱30分鐘後冷卻至25℃時,以25℃下之尺寸為基準,其MD及TD各自之尺寸變化率的絕對值低於1.0%。
Description
本發明涉及一種捲狀膜以及捲狀膜、覆銅積層體及印刷基板之製造方法。
發明背景
印刷基板的用途遍及行動電話、個人電腦、汽車、連線系統、人造衛星等各種電氣設備或系統。近幾年由於資訊大容量化,訊號的高頻化或印刷基板的圖案電路之微細化不斷進展。
在製造印刷基板時,一般係使用介電質薄膜表面積層有銅箔的覆銅積層體。在製造結構最簡單的單面基板時,於覆銅積層體之銅箔上藉由網版印刷或感光性黏著薄膜之燒黏及顯影形成欲製得的電路圖案,並以此作為抗蝕層來蝕刻銅箔。
在製造雙面基板或多層基板時,多用通孔鍍覆來進行層間連接。通孔鍍覆一般係以稱為全板鍍覆(PANEL PLATING)的整面鍍覆以鍍銅膜被覆層間連接用的孔內及基板表面。電路圖案係將銅箔與形成於其上的鍍銅膜整批蝕刻而形成。最近在微細電路基板,為了提升蝕刻精度,多使用厚度12μm以下的薄銅箔。其中在形成如線寬50μm、間隔寬度50μm左右之線條和間隔圖案(line and space pattern)的微細電路時,藉由使用厚度5μm之極薄鍍銅箔,可降低形成電路時的銅厚,而可輕易提升蝕刻精度。
對經通孔鍍覆之印刷基板進行完工狀態之評估及可靠性試驗。完工狀態的評估有鍍覆厚度、鍍覆形狀、鍍覆物性這3項。可靠性試驗主要是評估溫度循環下的疲勞壽命及評估稱為電蝕試驗之在恆溫恆濕偏壓下的絕緣壽命。在電蝕試驗中,周知使用梳狀圖案之圖案間絕緣可靠性試驗乃相當重要的可靠性試驗(非專利文獻1)。
介電質薄膜周知有以選自於由聚醯亞胺薄膜(專利文獻1)、聚伸苯醚樹脂、聚醚碸樹脂、聚醚醚酮樹脂及氟樹脂所構成群組中之至少1種構成的薄膜(專利文獻2)。
先前技術文獻
專利文獻
專利文獻1:日本專利第4880911號公報
專利文獻2:日本特開2015-146469號公報
非專利文獻
非專利文獻1:Hajime NAKAYAMA, 表面技術 Vol.53, No.2, p.110-115(2002)
發明概要
發明欲解決之課題
電蝕試驗係通孔間或通孔-內層圖案間之恆溫恆濕偏壓試驗,可採用作為鍍覆膜材或基材、製造狀態等之通孔鍍覆部之穩定性的綜合評估試驗。為了製造高精度的印刷基板,需要一種介電特性與在電蝕試驗中之穩定性優異的介電質薄膜。但,專利文獻1之薄膜的相對介電常數高,無法顯現高度的傳輸性能。專利文獻2之薄膜在電蝕試驗中穩定性很差。
周知,氟樹脂薄膜具優異的介電特性。但,本發明人等深知,使用該捲狀膜製造而成的印刷基板在電蝕試驗中穩定性依舊不足,且其原因是源自捲狀膜之尺寸穩定性。所以,想要用氟樹脂之捲狀膜有效率地製造可在電蝕試驗中顯現優異穩定性的印刷基板相當困難。
本發明人等努力研討的結果,獲得了一種適合製造高精度之印刷基板且預定厚度之尺寸穩定性優異的氟樹脂之捲狀膜。
本發明目的在於提供一種適合有效率地製造在電蝕試驗中穩定性優異之印刷基板的氟樹脂之捲狀膜及其製造方法,以及使用有前述捲狀膜的覆銅積層體及印刷基板之製造方法。
用以解決課題之手段
本發明提供一種具有以下[1]~[15]之構成的捲狀膜、捲狀膜之製造方法、覆銅積層體之製造方法、及印刷基板之製造方法。
[1]一種捲狀膜,係以熱熔融性氟樹脂為主成分且厚度為1~100μm;該捲狀膜在150℃下加熱30分鐘後冷卻至25℃時,以25℃下之尺寸為基準,其MD及TD各自之尺寸變化率的絕對值低於1.0%。
[2]如[1]記載之捲狀膜,其捲取時之張力相對於前述MD尺寸變化率之絕對值的比為100~1000000。
[3]如[1]或[2]記載之捲狀膜,其係用於覆銅樹脂積層體。
[4]如[1]~[3]中任一項記載之捲狀膜,其中前述熱熔融性氟樹脂係含有源自四氟乙烯之單元與源自全氟(烷基乙烯基醚)之單元的氟樹脂。
[5]如[1]~[4]中任一項記載之捲狀膜,其中前述熱熔融性氟樹脂係具有可發揮離子捕捉能力之官能基的氟樹脂。
[6]如[1]~[5]中任一項記載之捲狀膜,其係以具有可發揮離子捕捉能力之官能基的熱熔融性氟樹脂與該熱熔融性氟樹脂以外之熱熔融性氟樹脂作為主成分。
[7]如[1]~[6]中任一項記載之捲狀膜,其具有熱熔融性氟樹脂層與具有可發揮離子捕捉能力之官能基的熱熔融性氟樹脂層。
[8]如[5]~[7]中任一項記載之捲狀膜,其中可發揮離子捕捉能力之官能基係選自於由羰基、羧基、羧酸酐基(-C(=O)-O-C(=O)-)、羧酸酯基、磺醯基、磺酸基及磺酸酐基(-S(=O)2
-O-S(=O)2
-)所構成群組中之至少1種。
[9]如[1]~[8]中任一項記載之捲狀膜,其厚度為3~75μm。
[10]一種捲狀膜之製造方法,係如[1]~[9]中任一項記載之捲狀膜的製造方法;該方法係將以熱熔融性氟樹脂為主成分且厚度為1~100μm的薄膜以比前述熱熔融性氟樹脂之熔融溫度(Tm)低210℃之溫度至比Tm低20℃之溫度進行退火處理,然後予以捲取。
[11]如[10]記載之製造方法,其係將施加於前述薄膜之張力設為10N/m以下來進行前述退火處理。
[12]如[10]或[11]記載之製造方法,其係將施加於前述薄膜之張力設為500N/m以下來捲取前述薄膜。
[13]一種覆銅積層體之製造方法,係將如[1]~[9]中任一項記載之捲狀膜捲出後,在已捲出的薄膜表面上形成銅層。
[14]如[13]記載之製造方法,其形成交流電阻值大於1.0×10-9
Ω・cm之銅層。
[15]一種印刷基板之製造方法,係藉由如[13]或[14]記載之製造方法製造覆銅積層體後,蝕刻前述銅層而形成圖案電路。
發明效果
藉由本發明之捲狀膜,可製得一種在電蝕試驗中穩定性優異的印刷基板。
用以實施發明之形態
本說明書中之以下用語意義如下。
「MD」意指縱向(Machine Direction),「TD」則表示與MD正交之方向(Transverse Direction,橫向)。
「尺寸變化率」係在150℃加熱30分鐘後冷卻至25℃時,以25℃下之尺寸為基準之尺寸的變化率,詳細可以後述實施例中記載之方法求得。
「熱熔融性樹脂」意指熔融流動性的樹脂,指在荷重49N之條件下,比樹脂熔點高20℃以上之溫度中存在有熔融流速為0.1~1000g/10分鐘之溫度的樹脂。
「熔融流速」係表示JIS K 7210:1999(ISO 1133:1997)所規定之樹脂的熔融質量流量(MFR)。
「熔融溫度」表示以示差掃描熱量測定(DSC)法測得之對應樹脂之熔解峰最大值的溫度。
「玻璃轉移溫度」(以下亦表記為Tg)係指樹脂在非晶區域之分子狀態所造成的轉移溫度之一,在比Tg低的溫度下,樹脂主鏈會發生凍結而展現玻璃狀態。Tg係與顯示以薄膜之固體動態黏彈性測定(DMA)法測得之tanδ尖峰之最大值之溫度相對應的溫度。
樹脂(聚合物)中之「單元」則表示藉由單體聚合所形成之源自前述單體的原子團。單元可為藉由聚合反應直接形成的單元,或可為將聚合物作處理使前述單元之一部分轉換成另一結構的單元。以下,源自單體之單元亦僅表記為「單體單元」。
表示數值範圍之符號「~」係表示以含其前後記載之數值作為下限值及上限值。
圖1~圖7中之尺寸比為說明之便,與實際不同。
本發明之捲狀膜係以熱熔融性氟樹脂(以下亦僅表記為「氟樹脂」)為主成分且厚度為1~100μm;該捲狀膜在150℃下加熱30分鐘加熱後冷卻至25℃時,以25℃下之尺寸為基準,其MD及TD各自之尺寸變化率的絕對值低於1.0%。本發明之捲狀膜係經捲取的薄膜,且宜為捲取成捲狀的長條(帶狀)薄膜。
本發明中之氟樹脂係含有氟烯烴單元之熱熔融性樹脂。氟烯烴宜為四氟乙烯(TFE)、氯三氟乙烯(CTFE)、二氟亞乙烯(VDF)或氟乙烯(VF),且TFE尤佳。
氟樹脂之熔融溫度宜為260~320℃,280~310℃尤佳。
在荷重49N之條件下,氟樹脂之MFR在比氟樹脂之熔融溫度高20℃以上的溫度下宜為0.1~100g/10分鐘,1~40g/10分鐘較佳,5~30g/10分鐘尤佳。此時,氟樹脂之成形加工性與捲狀膜之機械強度容易取得平衡。
氟樹脂之相對介電常數宜為3.0以下,2.5以下較佳,2.2以下尤佳。相對介電常數之下限譬如為1.8。此時,捲狀膜的電特性優異,可製得傳輸效率優異的印刷基板。
氟樹脂之相對介電常數譬如可藉由氟樹脂中所含氟烯烴之單元種類或含量來調整。
譬如在後述捲狀膜之製造方法中的退火處理之條件下,氟樹脂之儲存彈性模數宜為1MPa以上,10MPa以上較佳,20MPa以上尤佳。從需要連續處理之氟樹脂的可撓性觀點來看,上限值為100MPa。另,儲存彈性模數可以固體動態黏彈性等進行測定。
氟樹脂可舉:含有TFE單元與全氟(烷基乙烯基醚)(PAVE)單元之氟樹脂(PFA)、含有TFE單元與六氟丙烯(HFP)單元之氟樹脂(FEP)、含有TFE單元與乙烯單元之氟樹脂(ETFE)、含有VDF單元之氟樹脂(PVDF)、含有CTFE單元之氟樹脂(PCTFE)、含有乙烯單元與氯三氟乙烯單元之氟樹脂(ECTFE);若從可獲得尺寸穩定性與耐撓性更為優異、且在電蝕試驗中穩定性更為優異的印刷基板的觀點來看,以PFA為佳。從可獲得尺寸穩定性優異且預定厚度之捲狀膜的觀點來看,PFA宜相對於總單元含有92~99莫耳%之TFE單元且含有1~8莫耳%之PAVE單元。
氟樹脂宜為具有可發揮離子捕捉能力之官能基(以下亦表記為「官能基i」)的氟樹脂(以下亦表記為「氟樹脂i」)。
官能基i係具有在80℃以上且300℃以下之溫度下進行退火處理時捕捉離子性物質之作用的官能基。吾等認為腐蝕現象是電蝕現象的一大主因。腐蝕現象係形成電路之材料因電化學反應或改質所產生的離子、或從外部因表面附著等而組入的離子性物質(吸附了大氣中之氯化氫、NOx、SOx等的粉塵、油等附著物、或是源自焊接焊料、絕緣接著層等其他基板構成材料中所含各種添加劑之相對陽離子類),因遷移或電力進行移動,而在具有電極作用之物質表面發生電化學反應所引起。吾等認為,官能基i會與可能引發電蝕之原因的離子性物質起反應,使不要的離子性物質固定化或變得無害。
從離子捕捉能力與熱穩定性的觀點來看,官能基i宜為選自於由羰基、羧基、羧酸酐基(-C(=O)-O-C(=O)-)、羧酸酯基、磺醯基、磺酸基及磺酸酐基(-S(=O)2
-O-S(=O)2
-)所構成群組中之至少1種;若從未離子化的觀點來看,則以羧基、羧酸酐基或羧酸酯基尤佳。
氟樹脂i具有之官能基i可源自具有官能基i之單體,可源自聚合引發劑或鏈轉移劑,亦可源自接枝聚合至氟樹脂之具有官能基i的化合物。
具有官能基i之單體可舉後述之含有羧酸酐基之環狀單體、全氟[2-(氟磺醯基乙氧基)丙基乙烯基醚]、甲基全氟-5-氧基-6-庚烯酸酯(以下亦表記為「MXM」)等。
若從氟樹脂i之熔融溫度的觀點來看,相對於氟樹脂i之主鏈碳數1×106
個,氟樹脂i中之官能基i含量宜為10~60000個,300~5000個尤佳。此時,容易取得以下三方平衡:使用捲狀膜製造之覆銅積層體的印刷基板在電蝕試驗的穩定性、被捲出之捲狀膜及銅層的密著性、以及捲狀膜之耐熱性、機械特性與電特性。
官能基i之含量可藉由核磁共振分析、紅外線吸收光譜分析等方法進行測定;譬如,可藉由日本專利特開2007-314720號公報中記載之方法,求算氟樹脂i之總單元中具有官能基i的單元比率(莫耳%)。
氟樹脂i可舉含有具有官能基i之單元或具有官能基i之末端基的氟樹脂。具體例可舉:具有官能基i之熱熔融性聚四氟乙烯、具有官能基i之PFA、具有官能基i之FEP、具有官能基i之乙烯/TFE系共聚物(ETFE)、TFE/全氟[2-(氟磺醯基乙氧基)丙基乙烯基醚]系共聚物(Dupont公司之Nafion等)、TFE/MXM共聚物及其酸型離子交換樹脂(AGC公司之Flemion等)。氟樹脂i亦可為2種以上混合物。另,該等共聚物中之「系」表示亦可進一步含有其他單體單元。
從兼具含氟量與加工性的觀點來看,氟樹脂i宜為具有官能基i之PFA、具有官能基i之FEP、TFE/MXM聚合物。
氟樹脂i宜為含有具有官能基i之單元的氟樹脂。此時,更容易提升離子捕捉能力及與金屬箔等各種基材之接著性。
若從所捲出之捲狀膜與銅層界面的密著性及捲狀膜之電特性更為優異的觀點來看,前述氟樹脂宜為具有TFE或CTFE單元u1、含羧酸酐基之環狀單體或MXM之單元u2與含氟單體之單元u3的氟樹脂(以下亦表記為「氟樹脂ii」)。
從耐熱性優異的觀點來看,構成單元u1之單體宜為TFE。
前述環狀單體可舉伊康酸酐(IAH)、檸康酸酐(CAH)、5-降莰烯-2,3-二羧酸酐(NAH)、馬來酸酐等。前述環狀單體可單獨使用1種亦可將2種以上併用。
前述環狀單體宜為IAH、CAH及NAH,若從前述密著性更為優異的觀點來看,則以IAH及NAH為佳。
氟樹脂ii中有時會含有具有單元u2之羧酸酐基部分水解而形成之二羧酸基(伊康酸、檸康酸、5-降莰烯-2,3-二羧酸、馬來酸等)的單元。此時,前述單元含量係視為被包含在單元u2之含量中。
構成單元u3之含氟單體可舉:TFE及CTFE除外之氟烯烴(VF、VDF、CF2
=CHF、HFP、六氟異丁烯等)、PAVE、CF2
=CFOCF2
CF(CF3
)OCF2
CF2
SO2
F、CF2
=CFOCF2
CF(CF3
)OCF2
CF2
SO3
H、CF2
=CFCF2
OCF=CF2
、CF2
=CFCF2
CF2
OCF=CF2
、氟烷基乙烯(FAE)、全氟(2,2-二甲基-1,3-二呃)、2,2,4-三氟-5-三氟甲氧基-1,3-二呃、全氟(2-亞甲基-4-甲基-1,3-二茂烷等。
前述含氟單體係TFE及CTFE除外之含氟單體,若從氟樹脂ii之成形性、捲狀膜之耐撓性優異的觀點來看,宜選自於由HFP、PAVE及FAE所構成群組中之至少1種,且PAVE尤佳。
PAVE可舉CF2
=CFOCF2
CF3
、CF2
=CFOCF2
CF2
CF3
(PPVE)、CF2
=CFOCF2
CF2
CF2
CF3
、CF2
=CFO(CF2
)8
F,且PPVE為佳。
FAE可舉CH2
=CF(CF2
)2
F、CH2
=CF(CF2
)3
F、CH2
=CF(CF2
)4
F、CH2
=CF(CF2
)5
F、CH2
=CF(CF2
)8
F、CH2
=CF(CF2
)2
H、CH2
=CF(CF2
)3
H、CH2
=CF(CF2
)4
H、CH2
=CF(CF2
)5
H、CH2
=CF(CF2
)8
H、CH2
=CH(CF2
)2
F、CH2
=CH(CF2
)3
F、CH2
=CH(CF2
)4
F、CH2
=CH(CF2
)5
F、CH2
=CH(CF2
)6
F、CH2
=CH(CF2
)8
F、CH2
=CH(CF2
)2
H、CH2
=CH(CF2
)3
H、CH2
=CH(CF2
)4
H、CH2
=CH(CF2
)5
H、CH2
=CH(CF2
)8
H等,且CH2
=CH(CF2
)4
F(PFBE)及CH2
=CH(CF2
)2
F(PFEE)為佳。
從捲狀膜之阻燃性、耐藥性等觀點來看,相對於氟樹脂ii中之單元u1、單元u2與單元u3之合計量,各單元的理想比率如下。
單元u1之比率宜為90~99.89莫耳%,且95~99.47莫耳%較佳,96~98.95莫耳%更佳。
單元u2之比率宜為0.01~3莫耳%,且0.03~2莫耳%較佳,0.05~1莫耳%更佳。此時,氟樹脂ii在已捲出的捲狀膜與銅層之界面的密著性就更佳。
單元u3之比率宜為0.1~9.99莫耳%,且0.5~9.97莫耳%較佳,1~9.95莫耳%更佳。此時,氟樹脂ii之成形性、捲狀膜之耐撓性等更為優異。
各單元之比率可藉由氟樹脂ii之熔融NMR分析、氟含量分析、紅外吸收光譜分析等算出。
氟樹脂ii可更含有其他單體單元u4。
其他單體可舉烯烴(乙烯、丙烯、1-丁烯等)、乙烯酯(乙酸乙烯酯等)等。其他單體可單獨使用1種亦可將2種以上併用。從捲狀膜之機械強度等觀點來看,其他單體宜為乙烯、丙烯、1-丁烯,且乙烯尤佳。
氟樹脂ii之具體例可舉TFE/NAH/PPVE共聚物、TFE/IAH/PPVE共聚物、TFE/CAH/PPVE共聚物、TFE/IAH/HFP共聚物、TFE/CAH/HFP共聚物、TFE/IAH/PFBE/乙烯共聚物、TFE/CAH/PFBE/乙烯共聚物、TFE/IAH/PFEE/乙烯共聚物、TFE/CAH/PFEE/乙烯共聚物、TFE/IAH/HFP/PFBE/乙烯共聚物。
氟樹脂ii宜為含有官能基i之PFA,且以含有含官能基i之單元的PFA較佳,TFE/NAH/PPVE共聚物、TFE/IAH/PPVE共聚物、TFE/CAH/PPVE共聚物尤佳。
本發明之捲狀膜係以氟樹脂為主成分,其含量宜為50~100質量%,且80~100質量%較佳。捲狀膜亦可進一步含有氟樹脂以外的其他樹脂、添加劑等。另,為了製造氟樹脂所使用的成分(聚合之界面活性劑等)不含在其他成分中。
其他樹脂可舉非熱熔融性氟樹脂、含氟彈性物、不含氟原子之樹脂等。
含氟彈性物宜為含有選自於由TFE、HFP、VDF及CTFE所構成群組中之至少1種氟烯烴單元的彈性物。具體上,可舉日本專利特開平05-78539號公報等中記載之TFE/丙烯系共聚物、日本專利特開平11-124482號公報等中記載之VDF/HFP共聚物、VDF/HFP/TFE共聚物等、及日本專利特開2006-089720號公報等中記載之具有TFE單元及CF2
=CFOCF3
單元的含氟聚合物等。該等聚合物亦可進一步含有其他單體單元。
不含氟原子之樹脂可舉如聚酯、聚烯烴、苯乙烯系樹脂、胺甲酸乙酯樹脂、聚氧基亞甲基、聚醯胺、聚碳酸酯、聚甲基丙烯酸甲酯、聚氯乙烯、聚伸苯硫、聚伸苯醚、改質聚伸苯醚、聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺、聚碸、改質聚碸、聚醚碸、聚酮、聚醚酮、聚醚醚酮、聚醚酮酮、聚芳酯、聚醚腈、苯酚樹脂、苯氧樹脂、環氧樹脂等。
添加劑可舉如無機填料、有機填料。
無機填料可舉:二氧化矽、中空二氧化矽、黏土、滑石、碳酸鈣、雲母、矽藻土、氧化鋁、氧化鋅、氧化鈦、氧化鈣、氧化鎂、氧化鐵、氧化錫、氧化銻、氫氧化鈣、氫氧化鎂、氫氧化鋁、鹼性碳酸鎂、碳酸鎂、碳酸鋅、碳酸鋇、碳鈉鋁石、水滑石、硫酸鈣、硫酸鋇、矽酸鈣、蒙脫石、膨土、活性黏土、海泡石、絲狀鋁英石、絹雲母、玻璃纖維、玻璃珠、二氧化矽系中空球體、碳黑、碳奈米管、碳奈米角、石墨、碳纖維、玻璃中空球體、碳中空球體、木粉、硼酸鋅等。無機填料可為多孔質亦可為非多孔質。從提升無機填料對樹脂之分散性的觀點來看,亦可利用矽烷耦合劑、鈦酸酯耦合劑等表面處理劑來施行表面處理。無機填料可單獨使用1種亦可將2種以上併用。
有機填料可舉以其他樹脂為主成分之粒子填料且尤宜為由具有低介電特性之材料所構成的粒子填料、PTFE、聚苯乙烯或聚烯烴的粒子填料或其等樹脂之中空填料等。
捲狀膜之氟樹脂可由1種氟樹脂構成,亦可由2種以上氟樹脂構成。後者的具體例可舉由氟樹脂i與氟樹脂i以外之氟樹脂所構成之態樣。
在前述態樣中,氟樹脂i宜為氟樹脂ii,氟樹脂i以外之氟樹脂則宜為不具有官能基i之PFA。
前述態樣中之捲狀膜的氟樹脂總量中所占氟樹脂i之比率宜為0.1~49質量%,且5~40質量%較佳。氟樹脂i以外之氟樹脂比率宜為51~99.9質量%,60~95質量%較佳。
捲狀膜可僅由氟樹脂之薄膜構成,亦可形成在其他基材之表面。若為前者,可為由1層氟樹脂薄膜構成,亦可為由2層以上氟樹脂薄膜構成。若為後者,可使用氟樹脂薄膜作為其他基材。
本發明之捲狀膜的厚度為1~100μm,3~75μm較佳,3~50μm尤佳。捲狀膜之厚度若在前述範圍之下限值以上,覆銅積層體之形成性即佳。捲狀膜之厚度若在前述範圍之上限值以下,即可形成薄印刷基板,且多層形成性佳。更具體的捲狀膜之厚度態樣可舉3~30μm的薄膜態樣,30~60μm的厚膜態樣。
本發明之捲狀膜在150℃下加熱30分鐘加熱後冷卻至25℃時,以25℃下之尺寸為基準,其MD及TD各自之尺寸變化率的絕對值低於1.0%。以下,前項絕對值亦表記為「變化率MD」,後項絕對值亦表記為「變化率TD」。
通常熱熔融性氟樹脂的捲狀膜會因其製法(利用擠製成形之熔融成形法等)而殘留成形應變。所以,其捲狀膜之尺寸變化率會大於1.0%。爰此,本發明藉由調整氟樹脂之薄膜厚度及後述之退火處理的條件或薄膜之捲取條件,將捲狀膜之MD及TD各自之尺寸變化率收斂在預定範圍內,並抑制電蝕現象。因此,捲出本發明之捲狀膜而形成銅層,即可獲得高精度的覆銅積層體,從而可獲得電蝕現象獲得抑制的印刷基板。
變化率MD宜低於0.5%,且0.1%以下為佳,0.08%以下較佳,0.05%以下尤佳。
變化率TD宜低於0.5%,且0.1%以下為佳,0.08%以下較佳,0.05%以下尤佳。
本發明之捲狀膜的捲取張力相對於變化率MD之比宜為100~1000000,300~10000尤佳。此時,更容易提升捲狀膜的尺寸穩定率。
並且,變化率MD相對於變化率TD之比宜為5以下,3以下尤佳。此時,即使捲狀膜為長條,也能製造更高精度的印刷基板。前述比之下限通常為1。
捲狀膜之相對介電常數宜為3.0以下,2.5以下較佳,2.2以下尤佳。相對介電常數之下限譬如為1.8。此時,由捲狀膜製得之印刷基板的傳輸效率更為優異。
本發明之捲狀膜可用於覆銅積層體。具體上,捲狀膜係捲出後與銅層積層而做成覆銅積層體。
以上說明之捲狀膜,可從使用捲狀膜的覆銅積層體製得在電蝕試驗中穩定性優異的印刷基板。
而且,氟樹脂若具有官能基i,則捲狀膜與銅層之密著性也會提高。
另,吾等認為源自離子性物質之腐蝕現象是電蝕現象的一大主因。
氟樹脂若具有官能基i,離子性物質便會因官能基i而使離子性物質固定化或變得無害,因此可製得在電蝕試驗中穩定性更為優異的印刷基板。而且,官能基i與氟樹脂之主鏈化學鍵結,所以相較於在氟樹脂中含有含官能基i之低分子材料的情況,官能基i在薄膜內的自由度很低。故而可抑制因電路通電時產生之電場、磁場等所造成的離子導電、擴散等,離子性物質的固定效果或無害效果很大。
在本發明之捲狀膜之製造方法中,係將以氟樹脂為主成分且厚度為1~100μm的薄膜(以下亦表記為「未處理薄膜」)以比氟樹脂之熔融溫度(以下亦表記為「Tm」)低210℃之溫度至比Tm低20℃之溫度進行退火處理,然後予以捲取。
未處理薄膜的變化率MD與變化率TD各自大於1.0%,典型上是各自大於1.0%且為5%以下。
退火處理中具體的溫度為(氟樹脂之玻璃轉移溫度+10℃)以上且(氟樹脂之熔融溫度-20℃),若為一般的氟樹脂(熔融溫度為260℃~320℃之PFA等),則為80~300℃。
在退火處理中,宜對薄膜之MD施加張力。此時的張力宜為10N/m以下,5N/m以下尤佳。此時張力下限通常為1N/m。
經退火處理之薄膜在捲取時,宜對薄膜之MD施加張力(以下亦表記為「捲取張力」)。捲取張力宜為500N/m以下,300N/m以下較佳,150N/m以下尤佳。此時張力下限通常為1N/m。而且,捲取張力相對於變化率MD之絕對值的比宜為100~1000000,且300~10000尤佳。
另,各張力(N/m)係指薄膜MD每1m之值,在實際的薄膜處理裝置中,可藉由以薄膜張力測定裝置測得之張力與當時的薄膜寬度(m)求算。所述薄膜張力測定裝置可舉如OHKURA INDUSTRY公司製之商品名「Model 1FB-5000N」「Model HD-500」、(Bellmatic公司製之非接觸WEB張力計。捲取張力可將連接該測定裝置之3吋ABS塑膠管(厚度6mm)設置於捲取輥進行測定。
用圖1說明未處理薄膜之製造方法之一例。
圖1係示意顯示未處理薄膜之製造裝置100之一例的圖。
製造裝置100具備擠製機101、安裝在擠製機101上的T型模102、急冷輥103、多支冷卻輥104、一對夾輥105及捲取輥106。
多支冷卻輥104係直列配置成從T型模102吐出之薄膜狀熔融體11朝一對夾輥105側依序通過多支冷卻輥104。另,在此雖顯示了3支冷卻輥104,但冷卻輥104之數量不限於3支,亦可為1支。
急冷輥103係與多支冷卻輥104中最靠近T型模102之冷卻輥104(以下亦表記為「第1冷卻輥」)呈對向配置。
在製造裝置100中,未處理薄膜可按以下手續製造。
藉由擠製機101,將含有氟樹脂且視需求含有氟樹脂以外之其他樹脂、添加劑等的材料熔融,並將從擠製機101擠出之熔融樹脂供給至T型模102,從T型模102將熔融樹脂吐出成薄膜狀後,將薄膜狀熔融體11藉由急冷輥103壓附於第1冷卻輥104,接著使其依序接觸其餘的冷卻輥104進行冷卻後,使其通過一對夾輥105之間進行輸送而做成未處理薄膜12。所得未處理薄膜12則捲取至捲取輥106。可視需求將未處理薄膜12裁切做成薄片狀。
T型模102之模唇寬度無限制,譬如可設為500~4000mm。
成形速度、亦即熔融體11從T型模102的吐出速度宜為1~100m/分鐘,1~30m/分鐘尤佳。成形速度若在前述範圍內,薄膜平坦性即佳。成形速度若小於前述範圍之下限值,則熔融體11在接觸到冷卻輥之前就會冷卻,有薄膜平坦性變差之虞。成形速度若超過前述範圍之上限值,則薄膜冷卻得慢,有薄膜平坦性變差之虞。
熔融體11從T型模102吐出後至接觸第1冷卻輥104之接觸點的距離宜為500mm以下,300mm以下尤佳。前述時間之下限譬如為100mm。
冷卻輥104之表面溫度低於樹脂材料中之Tm,宜為室溫以上且(Tm-20℃)以下。
急冷輥103之表面溫度亦可與冷卻輥104之表面溫度相同。
在前述製造方法中,藉由以急冷輥103將熔融體11壓附至第1冷卻輥104,可減少退火處理時的變化率MD,而可以更溫和的退火處理條件抑制變化率MD之絕對值。吾等認為,這是因為藉由將熔融體11急冷而抑制了於薄膜端部堆積成形應變,提高薄膜於MD之應變均勻性的緣故。
另,在前述製造方法中,亦可不用急冷輥103進行壓附而冷卻熔融體11。
氟樹脂若為氟樹脂i,則利用退火處理進行加熱,可充分地使造成腐蝕原因之離子性物質因官能基i而固定化或變得無害,而容易從捲狀膜製得在電蝕試驗中穩定性優異的印刷基板。而且,退火時的薄膜形態保持性亦佳。
退火處理時間可考量捲狀膜之所期望的尺寸變化率及退火處理溫度來適宜設定。退火處理時間宜為1~60分鐘,1~30分鐘尤佳。退火時間若在前述範圍之下限值以上,便容易從捲狀膜製得在電蝕試驗中穩定性優異的印刷基板。退火時間若在前述範圍之上限值以下,處理效率即高,易於工業製造。
退火處理宜在已對未處理薄膜施加張力的狀態下進行。所述情況之態樣,可舉將捲狀的未處理薄膜以捲對捲往MD輸送並同時加熱之例。
退火處理時,施加於未處理薄膜的張力宜為10N/m以下,5N/m以下尤佳。前述張力若在前述上限值以下,施加於未處理薄膜的應力即少,而可減少捲狀膜的殘留應力。捲狀膜之殘留應力若少,捲狀膜的尺寸穩定性便更為優異。
將未處理薄膜以捲對捲往MD輸送並同時加熱時,輸送時施加於未處理薄膜之張力(以下亦表記為「輸送張力」)在作為退火處理而加熱之區域中宜為1N/m以上。輸送張力若在前述下限值以上,便可穩定輸送薄膜。
在已對未處理薄膜施加張力之狀態下進行退火處理時,宜在退火處理前於未處理薄膜積層其他基材,並在積層有基材之狀態下進行退火處理。藉此更容易調整施加於未處理薄膜的應力。
其他基材可舉如樹脂薄膜。
構成樹脂薄膜之樹脂可舉熱熔融性氟樹脂、非熱熔融性氟樹脂、非氟系樹脂等。非氟系樹脂可舉聚酯樹脂(聚對苯二甲酸乙二酯(PET)樹脂、聚萘二甲酸乙二酯樹脂(PEN)等)、聚醯亞胺樹脂等。
從其他基材與未處理薄膜之線膨脹係數相近、退火處理時不易發生捲曲的觀點來看,樹脂薄膜宜為氟樹脂薄膜。從基材與未處理薄膜之線膨脹係數更為相近、退火處理時更不易發生捲曲的觀點來看,構成氟樹脂薄膜之氟樹脂宜與未處理薄膜中所含氟樹脂為相同氟樹脂。譬如,氟樹脂為PFA時,構成樹脂薄膜之樹脂亦宜為PFA。構成樹脂薄膜之氟樹脂亦可不具官能基i。
基材厚度宜為25~100μm。
基材可直接積層於未處理薄膜,亦可隔著黏著層積層。
基材與未處理薄膜直接積層而成的積層體,譬如在前述製造方法中,可藉由將含有熱熔融性氟樹脂之樹脂材料與構成基材薄膜之樹脂材料一起共擠製之方法製得。共擠製之手法可舉進料塊(feed block)法、多歧管法等。
透過黏著層積層基材與未處理薄膜時,構成黏著層之黏著劑並無特別限定,可舉丙烯酸系、聚矽氧系、胺甲酸乙酯系、聚烯烴系等。
黏著層厚度宜為0.1~5μm,0.5~2μm尤佳。
以下用圖2~3說明本發明之捲狀膜之製造方法一例。圖2係顯示用以將未處理薄膜與基材貼合之貼合裝置一例的概略構成圖。圖3係顯示退火處理裝置一例的概略構成圖。
圖2所示貼合裝置200具備:第1捲出輥201,係依序捲出捲取成捲狀之未處理薄膜12;第2捲出輥202,係依序捲出捲取成捲狀之附黏著層之基材13;一對貼合輥203、204,係將未處理薄膜12與附黏著層之基材13貼合做成積層體14;及捲取積層體14的捲取輥205。
一對貼合輥203、204係將未處理薄膜12與附黏著層之基材13夾持在該等輥件間並予以加壓而將之貼合。
附黏著層之基材13於基材單面設有黏著層,具體上係於基材通過貼合輥203時會與未處理薄膜12相接側之面設有黏著層。
圖3所示退火處理裝置300具備:捲出輥301,係依序捲出捲取成捲狀的積層體14;加熱積層體14的加熱部302;多支輸送輥303;及捲取輥304,係捲取加熱後之積層體14即捲狀膜與附黏著層之基材13的積層體15。
加熱部302中形成有輸送積層體14的空間S,且在空間S內配置有多支輸送輥303。而且,在加熱部302設有加熱機構(未圖示),用以加熱被導入至空間S中之積層體14。
在退火處理裝置300中,係藉由捲出輥301及捲取輥304來控制積層體14之捲出速度及捲取速度,從而可控制施加在輸送中之積層體14的輸送張力及捲取張力。
在本例之製造方法中,捲狀膜係按以下手續製造。
首先,在貼合裝置200中,將未處理薄膜12從第1捲出輥201輸送至貼合輥203、204,並將附黏著層之基材13從第2捲出輥202輸送至貼合輥203、204後,以貼合輥203、204貼合未處理薄膜12與附黏著層之基材13,並以捲取輥205捲取所得之積層體14。
接著,將已捲取之積層體14移轉到退火處理裝置300之捲出輥301,從捲出輥301捲出並輸送至加熱部302,再以加熱部302加熱將未處理薄膜12做成捲狀膜後,以捲取輥304捲取捲狀膜與附黏著層之基材13的積層體15。亦可視需求將積層體15裁切成薄片狀。亦可視需求將附黏著層之基材13從積層體15剝離。附黏著層之基材13通常係在製造覆銅積層體時剝離。
使用本發明之捲狀膜的覆銅積層體具備從捲狀膜捲出形成的介電質層及與前述介電質層相接設置的銅層。
圖4係示意顯示覆銅積層體一例的截面圖。圖4所示覆銅積層體40具備:介電質層41,係由所捲出之捲狀膜構成;及銅層42,係積層於介電質層41之厚度方向上的第1表面41a。
圖5係示意顯示覆銅積層體之另一例的截面圖。圖5所示覆銅積層體50具備:介電質層51,係由所捲出之捲狀膜構成;第1銅層52,係積層在介電質層51之厚度方向上的第1表面51a;及第2銅層53,係積層在介電質層51之與第1表面51a為相反側的第2表面51b。
銅層的厚度宜為3~18μm。若要形成微細電路,銅層的厚度宜為12μm以下。
銅層宜使用銅箔形成。銅箔可舉軋延銅箔、電解銅箔等。
在本發明之覆銅積層體之製造方法中,係捲出本發明之捲狀膜(或藉其製造方法製成的製品薄膜)並於其表面形成銅層。
形成銅層者可僅為捲狀膜之厚度方向上的第1表面,亦可為第1表面及與第1表面為相反側的第2表面兩者。
於已捲出之捲狀膜表面形成銅層的方法,可舉於捲狀膜表面積層(貼附)銅箔的方法、蒸鍍法、鍍覆法等。
積層銅箔之方法可舉例用熱壓之方法。熱壓溫度宜為介電質薄膜之熔點+20℃~介電質薄膜之熔點+100℃。熱壓時間譬如為1~30分鐘。熱壓壓力譬如為0.1~10MPa。
為了提升銅層與已捲出之捲狀膜的接著性,形成銅層前宜對已捲出之捲狀膜進行表面處理。表面處理可舉電漿處理、電暈處理、紫外線(UV)照射法等。
所得覆銅積層體可作為印刷基板用材料使用。
印刷基板係用以將半導體或電容晶片等電子零件進行電連結並同時將之配置固定在有限空間內的板狀零件。
由本覆銅積層體形成之印刷基板的構成並無特別限制,可採用公知的印刷基板構成。印刷基板可任擇為剛性基板、撓性基板、剛性撓性基板。印刷基板可任擇為單面基板、雙面基板、多層基板(增層基板等)。
在本發明之印刷基板之製造方法中,係藉由前述覆銅積層體之製造方法製造覆銅積層體,並蝕刻前述銅層而形成圖案電路。
銅層之蝕刻方法可採用公知方法。
製造印刷基板時,亦可蝕刻銅層而形成圖案電路後,於前述圖案電路上形成層間絕緣膜,再於前述層間絕緣膜上進一步形成圖案電路。
製造印刷基板時,亦可於前述圖案電路上積層阻焊層。
製造印刷基板時,亦可積層覆蓋薄膜。覆層薄膜典型上係由基材薄膜及形成在其表面上之接著劑層構成,且接著劑層側之面與印刷基板貼合。
亦可將蝕刻覆銅積層體之銅層所得的基板作為內層電路基板而製造增層基板。
以本發明之印刷基板之製造方法製得的印刷基板,可用於各種電氣設備或系統。其中,又可有效作為需要高頻特性之雷達、網際網路的路由器、底板、無線基地台等之電子機器用基板或汽車用各種感測器用基板、引擎管理感測器用基板,尤其適於目的在於減低毫米波帶區之傳輸損失的用途。
實施例
以下顯示實施例來詳細說明本發明。惟,本發明不受以下記載限定。
各例中所使用之測定或試驗方法及材料記述如下。
(測定方法)
<MFR[g/10分鐘]>
使用熔融指數測定儀(Technol Seven Co.,Ltd.製),測定求出在372℃、49N荷重下從直徑2mm且長8mm之噴嘴流出10分鐘之氟樹脂的質量(g)。
<厚度>
以接觸式厚度計OG-525H(小野測器公司製),使用量測頭AA-026(φ10mm SR7)求算。
<尺寸變化率[%]>
調製出將薄膜裁切成長度(MD)12cm×寬度(TD)12cm所得試料,並以下述方法求算。
在25℃下於試料上沿著MD及TD之各自方向畫1條長度約10cm的直線,並以各直線之端點間距離作為初始長度L0
。接著,將前述試料在150℃下進行30分鐘熱處理並冷卻至25℃後,測定試料上所畫直線之端點間的直線距離L1
,再按下式1求出尺寸變化率(%)。
尺寸變化率(%)=(L1
/L0
-1)×100…式1
將沿著MD之直線求出之尺寸變化率的絕對值作為MD之尺寸變化率(變化率MD),並將沿著TD之直線求出之尺寸變化率的絕對值作為TD之尺寸變化率(變化率TD)。
<剝離試驗>
將製得之銅層積層體裁切成寬度1cm,做成評估試樣。將介電質薄膜與銅箔之間,從評估試樣之長度方向之一端剝離至50mm之位置。接著,使用拉伸試驗機,在室溫下於拉伸速度100mm/分鐘下以90°之方式剝離,並以測定距離20mm至80mm之平均荷重作為剝離強度(N/cm)。室溫為25℃。
<電蝕試驗>
按照「玻璃基材之覆銅積層板的絕緣可靠性」,Circuit Technology Inc. Vol.3, No.4, p212-219(1988)中所載之簡易電蝕性評估法。
在電蝕試驗中,係使用圖6所示之2個梳狀圖案60組合而成的圖案。各梳狀圖案60係由多條平行配置之線部61與基部62所構成,該基部62係沿與該等線部61之長度方向正交之方向延伸並連接各線部61。在前述圖案中,其中一梳狀圖案60的多條線部61與另一梳狀圖案60的多條線部61係在與線部61之長度方向正交之方向交錯配置,且各梳狀圖案60未相互接觸。在各梳狀圖案60中,線部61之長度為100mm,線部61之寬度為0.33mm,線部61之條數為100條。鄰接之線部61間的間隔為0.10mm。
於所製得之覆銅積層體之銅層蝕刻出2個如圖6所示之梳狀圖案後,使用通用恆溫恆濕烘箱(ESPEC CORP. PL-1KTH),在85℃且85%RH之恆溫恆濕條件下保持500小時之處理時間而獲得試料71。
如圖7所示,將試料71之2個梳狀圖案分別接上電源72之正極、負極後,將試料71浸漬於電解液L(1μmol/L之HCl水溶液)中,施加電壓。施加電流為20VDC,施加時間為100分鐘。然後從電解液L取出試料71,並在10Hz、1A之條件下測定2個梳狀圖案間之交流電阻值(Ω・cm)。
從測得之交流電阻值,按以下基準判定在電蝕試驗中之穩定性。當2個梳狀圖案因變形等而相互接觸,交流電阻值會變小。交流電阻值愈大,表示在電蝕試驗中之穩定性愈佳。
〇(良):交流電阻值大於10-9
Ω・cm。
×(不良):交流電阻值為10-9
Ω・cm以下。
<使用材料>
PFA1:與以國際公開第2016/017801號之段落[0124]同樣方式合成而獲得的PFA。各單元比率為TFE/NAH/PPVE=97.9/0.1/2.0莫耳%。該PFA具有羧酸酐基作為官能基i。羧酸酐基之含量相對於主鏈碳數1×106
個為1000個,熔融溫度為300℃,熔融流速為17.0g/10分鐘。
PFA2:旭硝子公司製「P-63P」,不具有官能基i之PFA(MFR:15.0g/10分鐘)。
PFA3:旭硝子公司製「P-62XP」,不具有官能基i之PFA(MFR:25.0g/10分鐘)。
ETFE1:旭硝子公司製「C88AX」,不具有官能基i之ETFE(MFR:15g/10分鐘)。
銅箔:福田金屬工業公司製「CF-T4X-SVR」,電解銅箔,厚度12μm。
(例1)
使用具有寬700mm之T型模的65mmφ單軸擠製機(東芝機械公司製,L/D=25,壓縮比3.1),在成形溫度340℃、成形速度3.5m/分鐘下將PFA1之丸粒擠製成形成薄膜狀,而獲得厚度50μm、寬510mm的薄膜(捲取成捲狀之未處理薄膜)。
用圖3所示構成之退火處理裝置300將該薄膜從捲出輥301捲出,施加5N/m之張力並輸送至加熱部302,於加熱部302在150℃、5分鐘之條件下加熱後,施加62.5N/m之張力並以捲取輥304捲取,而獲得厚度50μm之捲狀膜。亦即,退火處理條件係設為溫度150℃、時間5分鐘、輸送張力5N/m,捲取條件則設為捲取張力62.5N/m。
捲出所得之捲狀膜,裁切成長度15cm×寬15cm後,於一表面配置相同大小的銅箔,用真空壓機在340℃、15分鐘、1.5MPa之條件下熱壓而獲得覆銅積層體。
針對所得覆銅積層體,將進行了剝離試驗及電蝕試驗之結果列於表1。
(例2~14)
除了將氟樹脂之種類、成形條件、捲對捲方式之退火處理條件、捲取條件如表1所示變更外,以與例1同樣方式獲得捲狀膜,並製造覆銅積層體後,進行其剝離試驗及電蝕試驗。統整結果列於表1。
[表1]
表1中,例10中之「PFA1(10)、PFA2(90)」的表記表示以10質量%、90質量%之比率依序併用PFA1與PFA2。其他例及其他表中之其他表記亦同。
(例15)
使用具有寬1900mm之T型模的65mmφ單軸擠製機(東芝機械公司製,L/D=25,壓縮比3.1),在成形溫度340℃、成形速度20m/分鐘下將PFA1擠製成形成薄膜狀,而獲得厚度25μm、寬1500mm之薄膜。
用圖2所示構成之貼合裝置200及圖3所示構成之退火處理裝置300,將該薄膜按以下手續進行退火處理並捲取,而獲得薄膜與基材透過黏著層積層而成的捲狀膜。
首先,在貼合裝置200,將未處理薄膜12從第1捲出輥201輸送至貼合輥203、204,並將附黏著層之基材13從第2捲出輥202輸送至貼合輥203、204後,以貼合輥203、204於室溫下貼合未處理薄膜12與附黏著層之基材13,並以捲取輥205捲取所得之積層體14。
附黏著層之基材13的基材係使用將PFA2之丸粒以與前述同樣方式擠製成形所得之厚度50μm的薄膜。黏著層係用胺甲酸乙酯丙烯酸酯系黏著劑,形成為厚度2μm。
接著,將已捲取之積層體14移轉至退火處理裝置300之捲出輥301,從捲出輥301捲出,施加5N/m之張力並輸送至加熱部302,於加熱部302在150℃、5分鐘之條件下加熱後,施加100N/m以下之張力並以捲取輥304捲取而獲得捲狀膜。亦即,退火處理條件係設為溫度150℃、時間5分鐘、輸送張力5N/m,捲取條件則設為捲取張力100N/m以下。
捲出所得之捲狀膜,裁切成長度15cm×寬15cm後,於捲狀膜側之表面(PFA1側之表面)配置相同大小的銅箔,剝離附黏著層之基材後,用真空壓機在340℃、15分鐘、1.5MPa之條件下熱壓而獲得覆銅積層體。
針對所得覆銅積層體,將進行了剝離試驗及電蝕試驗之結果列於表2。
(例16~21)
除了將氟樹脂之種類、基材及捲對捲方式之退火處理條件(溫度、時間、輸送張力)如表2所示變更外,以與例15同樣方式獲得捲狀膜,並製造覆銅積層體,進行其剝離試驗及電蝕試驗。統整結果列於表2。
[表2]
表2中,例18及19中之基材13係改用厚度75μm之PFA2薄膜,來替代厚度50μm之PFA2薄膜。
(例22)
按以下手續製作2層結構之共擠製薄膜。用15mmφ單軸擠製機(TANABE PLASTICS MACHINERY CO.,LTD.製),以設定溫度340℃將PFA1熔融而供給至寬400m之2層多歧管模具的第1歧管,並用30mmφ單軸擠製機(池貝公司製)以設定溫度340℃將ETFE1熔融而供給至第2歧管,然後將各熔融樹脂從前述多歧管模具在成形速度2m/分鐘下擠製成形成薄膜狀,而製得第1層(PFA1)之厚度為25μm、第2層(ETFE1)之厚度為75μm且寬度320mm的共擠製薄膜。將該共擠製薄膜以與例1同樣方式進行退火處理而獲得捲取捲狀膜。該捲狀膜之變化率MD為0.03,變化率TD為0.02。使用該捲狀膜製得之覆銅積層體的剝離強度為8.4N/m,交流電阻值為8.4×10-9
Ω・cm,判定為「○」。
產業上之可利用性
使用本發明之捲狀膜,即可獲得適合高頻設備的高可靠性印刷基板。
另,在此係援用已於2018年04月20日提申之日本專利申請案2018-081794號之說明書、申請專利範圍、摘要及圖式之全部內容並納入作為本發明說明書之揭示。
11‧‧‧熔融體
12‧‧‧未處理薄膜
13‧‧‧附黏著層之基材
14、15‧‧‧積層體
40、50‧‧‧覆銅積層體
41、51‧‧‧介電質層
41a、51a‧‧‧第1表面
42‧‧‧銅層
51b‧‧‧第2表面
52‧‧‧第1銅層
53‧‧‧第2銅層
60‧‧‧梳狀圖案
61‧‧‧線部
62‧‧‧基部
71‧‧‧試料
72‧‧‧電源
100‧‧‧未處理薄膜之製造裝置
101‧‧‧擠製機
102‧‧‧T型模
103‧‧‧急冷輥
104‧‧‧冷卻輥
105‧‧‧夾輥
106‧‧‧捲取輥
200‧‧‧貼合裝置
201‧‧‧第1捲出輥
202‧‧‧第2捲出輥
203、204‧‧‧貼合輥
205‧‧‧捲取輥
300‧‧‧退火處理裝置
301‧‧‧捲出輥
302‧‧‧加熱部
303‧‧‧輸送輥
304‧‧‧捲取輥
S‧‧‧空間
L‧‧‧電解液
圖1係示意顯示未處理薄膜之製造裝置100之一例的圖。
圖2係顯示用以將未處理薄膜與基材貼合之貼合裝置一例的概略構成圖。
圖3係顯示退火處理裝置一例的概略構成圖。
圖4係示意顯示覆銅積層體一例的截面圖。
圖5係示意顯示覆銅積層體之另一例的截面圖。
圖6係電蝕試驗中使用之圖案的說明圖。
圖7係電蝕試驗之試驗方法的說明圖。
11‧‧‧熔融體
12‧‧‧未處理薄膜
100‧‧‧未處理薄膜之製造裝置
101‧‧‧擠製機
102‧‧‧T型模
103‧‧‧急冷輥
104‧‧‧冷卻輥
105‧‧‧夾輥
106‧‧‧捲取輥
Claims (12)
- 一種捲狀膜,係以熱熔融性氟樹脂為主成分且厚度為1~100μm,前述熱熔融性氟樹脂係含有源自四氟乙烯之單元與源自全氟(烷基乙烯基醚)之單元的氟樹脂;該捲狀膜在150℃下加熱30分鐘後冷卻至25℃時,以25℃下之尺寸為基準,其MD及TD各自之尺寸變化率的絕對值低於1.0%。
- 如請求項1之捲狀膜,其係用於覆銅樹脂積層體。
- 如請求項1之捲狀膜,其中前述熱熔融性氟樹脂係具有可發揮離子捕捉能力之官能基的氟樹脂。
- 如請求項1之捲狀膜,其係以具有可發揮離子捕捉能力之官能基的熱熔融性氟樹脂與該熱熔融性氟樹脂以外之熱熔融性氟樹脂作為主成分。
- 如請求項1之捲狀膜,其具有熱熔融性氟樹脂層與具有可發揮離子捕捉能力之官能基的熱熔融性氟樹脂層。
- 如請求項3至5中任一項之捲狀膜,其中可發揮離子捕捉能力之官能基係選自於由羰基、羧基、羧酸酐基(-C(=O)-O-C(=O)-)、羧酸酯基、磺醯基、磺酸基及磺酸酐基(-S(=O)2-O-S(=O)2-)所構成群組中之至少1種。
- 如請求項1或2之捲狀膜,其厚度為3~75μm。
- 一種捲狀膜之製造方法,係製造如請求項1至7中任一項之捲狀膜的方法;該方法係將以熱熔融性氟樹脂為主成分且厚度為1~100μm的薄膜以比前述熱熔融性氟樹脂之熔融溫度(Tm)低210℃之溫度至比Tm低20℃之溫度進行退火處理,然後予以捲取,在捲取經前述退火處理之薄膜時,對前述薄膜施加1N/m~500N/m的張力。
- 如請求項8之製造方法,其係將施加於前述薄膜之張力設為10N/m以下來進行前述退火處理。
- 一種覆銅積層體之製造方法,係將如請求項1至7中任一項之捲狀膜捲出後,在已捲出的薄膜表面上形成銅層。
- 如請求項10之製造方法,其形成交流電阻值大於1.0×10-9Ω.cm之銅層。
- 一種印刷基板之製造方法,係藉由如請求項10或11之製造方法製造覆銅積層體後,蝕刻前述銅層而形成圖案電路。
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US11866602B2 (en) | 2018-06-12 | 2024-01-09 | 3M Innovative Properties Company | Fluoropolymer compositions comprising fluorinated additives, coated substrates and methods |
WO2021088198A1 (en) | 2019-11-04 | 2021-05-14 | 3M Innovative Properties Company | Electronic telecommunications articles comprising crosslinked fluoropolymers and methods |
JP2021160856A (ja) * | 2020-03-31 | 2021-10-11 | Agc株式会社 | フッ素樹脂フィルム及びその製法 |
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EP4282906A1 (en) * | 2021-01-20 | 2023-11-29 | Daikin Industries, Ltd. | Fluororesin film, copper-clad laminate and substrate for circuits |
KR20240019121A (ko) * | 2021-06-11 | 2024-02-14 | 에이지씨 가부시키가이샤 | 조성물, 그리고 금속 피복 적층체 및 그 제조 방법 |
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