TWI829938B - 藉由選擇性硼氮化物或鋁氮化物沉積的高選擇性矽氧化物/矽氮化物蝕刻 - Google Patents

藉由選擇性硼氮化物或鋁氮化物沉積的高選擇性矽氧化物/矽氮化物蝕刻 Download PDF

Info

Publication number
TWI829938B
TWI829938B TW109120708A TW109120708A TWI829938B TW I829938 B TWI829938 B TW I829938B TW 109120708 A TW109120708 A TW 109120708A TW 109120708 A TW109120708 A TW 109120708A TW I829938 B TWI829938 B TW I829938B
Authority
TW
Taiwan
Prior art keywords
gas
layer
silicon oxide
oxide film
substrate
Prior art date
Application number
TW109120708A
Other languages
English (en)
Chinese (zh)
Other versions
TW202111808A (zh
Inventor
蔡宇浩
張度
明梅 王
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202111808A publication Critical patent/TW202111808A/zh
Application granted granted Critical
Publication of TWI829938B publication Critical patent/TWI829938B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW109120708A 2019-06-20 2020-06-19 藉由選擇性硼氮化物或鋁氮化物沉積的高選擇性矽氧化物/矽氮化物蝕刻 TWI829938B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962864378P 2019-06-20 2019-06-20
US62/864,378 2019-06-20

Publications (2)

Publication Number Publication Date
TW202111808A TW202111808A (zh) 2021-03-16
TWI829938B true TWI829938B (zh) 2024-01-21

Family

ID=74039387

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109120708A TWI829938B (zh) 2019-06-20 2020-06-19 藉由選擇性硼氮化物或鋁氮化物沉積的高選擇性矽氧化物/矽氮化物蝕刻

Country Status (6)

Country Link
US (1) US11152217B2 (https=)
JP (1) JP7564605B2 (https=)
KR (1) KR102813067B1 (https=)
CN (1) CN113785383B (https=)
TW (1) TWI829938B (https=)
WO (1) WO2020257160A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11315828B2 (en) * 2018-08-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide composite as etch stop layer
KR102660694B1 (ko) * 2019-06-26 2024-04-26 주식회사 히타치하이테크 플라스마 처리 방법
US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
CN116065139B (zh) * 2021-11-02 2024-11-08 东京毅力科创株式会社 成膜方法和成膜装置
CN114050106B (zh) * 2022-01-12 2022-04-15 广州粤芯半导体技术有限公司 掩模层的重工方法及氮化硅蚀刻方法
US12564022B2 (en) 2022-07-11 2026-02-24 Applied Materials, Inc. Carbon hardmask opening using boron nitride mask
KR20250154470A (ko) * 2023-02-24 2025-10-28 어플라이드 머티어리얼스, 인코포레이티드 등각 및 선택적 sin 퇴적
CN121970533A (zh) * 2023-10-02 2026-05-01 中央硝子株式会社 蚀刻方法、半导体器件的制造方法、蚀刻装置、表面处理气体组合物以及含有表面处理材料的蚀刻气体组合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180033608A1 (en) * 2016-08-01 2018-02-01 Tokyo Electron Limited Method and Apparatus for Forming Nitride Film

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600839B2 (ja) * 1988-09-01 1997-04-16 富士通株式会社 窒化シリコン膜のエッチング方法
JP3017898B2 (ja) * 1993-02-12 2000-03-13 財団法人地球環境産業技術研究機構 窒化ホウ素のエッチング方法
JP2002134472A (ja) * 2000-10-20 2002-05-10 Mitsubishi Electric Corp エッチング方法、エッチング装置および半導体装置の製造方法
WO2005017963A2 (en) 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
KR100568257B1 (ko) * 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8722547B2 (en) 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
JP5209859B2 (ja) * 2006-09-19 2013-06-12 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5289111B2 (ja) * 2009-03-09 2013-09-11 三菱電機株式会社 アレーアンテナならびにそれを用いたサイドローブキャンセラおよびアダプティブアンテナ
JP6019640B2 (ja) 2011-03-23 2016-11-02 富士通株式会社 電子デバイス及びその製造方法
TWI492298B (zh) * 2011-08-26 2015-07-11 應用材料股份有限公司 雙重圖案化蝕刻製程
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2017084894A (ja) 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
JP6608332B2 (ja) 2016-05-23 2019-11-20 東京エレクトロン株式会社 成膜装置
KR102722138B1 (ko) * 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180033608A1 (en) * 2016-08-01 2018-02-01 Tokyo Electron Limited Method and Apparatus for Forming Nitride Film

Also Published As

Publication number Publication date
KR20220024072A (ko) 2022-03-03
CN113785383A (zh) 2021-12-10
TW202111808A (zh) 2021-03-16
JP7564605B2 (ja) 2024-10-09
JP2022537347A (ja) 2022-08-25
WO2020257160A1 (en) 2020-12-24
US11152217B2 (en) 2021-10-19
KR102813067B1 (ko) 2025-05-26
CN113785383B (zh) 2025-11-11
US20200402808A1 (en) 2020-12-24

Similar Documents

Publication Publication Date Title
TWI829938B (zh) 藉由選擇性硼氮化物或鋁氮化物沉積的高選擇性矽氧化物/矽氮化物蝕刻
KR102550244B1 (ko) 유전체 재료의 식각을 위한 사전 세척
JP7545185B2 (ja) 高度に選択的な酸化ケイ素／窒化ケイ素エッチングのためのエッチング成分及び不動態化ガス成分の独立した制御
TWI693641B (zh) 圖案化低介電常數介電膜之方法
TWI800279B (zh) 原子層蝕刻中方向性之控制
TWI827787B (zh) 藉由氣體脈衝之矽氧化物相對於矽氮化物之選擇性電漿蝕刻
KR102033685B1 (ko) 저-ｋ 유전체 막을 패터닝하는 방법
JP7332961B2 (ja) ドライエッチング方法
TWI848982B (zh) 奈米線的選擇性蝕刻
TW202422695A (zh) 使用交替非電漿及電漿蝕刻製程之蝕刻方法
US7055532B2 (en) Method to remove fluorine residue from bond pads
TWI913690B (zh) 使用含矽氫氟烴之蝕刻方法
TWI921757B (zh) 使用含矽氫氟烴之蝕刻方法
TWI914747B (zh) 使用含矽氫氟烴之蝕刻方法
TWI914748B (zh) 使用含矽氫氟烴之蝕刻方法
US10008388B2 (en) Device conformity control by low temperature, low pressure, inductively coupled ammonia-nitrogen trifluoride plasma
CN104395990B (zh) 图案化低k介电膜的方法