CN113785383B - 通过选择性氮化硼或氮化铝沉积的高度选择性氧化硅/氮化硅蚀刻 - Google Patents

通过选择性氮化硼或氮化铝沉积的高度选择性氧化硅/氮化硅蚀刻

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Publication number
CN113785383B
CN113785383B CN202080033390.6A CN202080033390A CN113785383B CN 113785383 B CN113785383 B CN 113785383B CN 202080033390 A CN202080033390 A CN 202080033390A CN 113785383 B CN113785383 B CN 113785383B
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China
Prior art keywords
gas
layer
silicon oxide
substrate
oxide film
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CN202080033390.6A
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English (en)
Chinese (zh)
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CN113785383A (zh
Inventor
蔡宇浩
张度
王明美
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN113785383A publication Critical patent/CN113785383A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN202080033390.6A 2019-06-20 2020-06-16 通过选择性氮化硼或氮化铝沉积的高度选择性氧化硅/氮化硅蚀刻 Active CN113785383B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962864378P 2019-06-20 2019-06-20
US62/864,378 2019-06-20
PCT/US2020/037879 WO2020257160A1 (en) 2019-06-20 2020-06-16 Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition

Publications (2)

Publication Number Publication Date
CN113785383A CN113785383A (zh) 2021-12-10
CN113785383B true CN113785383B (zh) 2025-11-11

Family

ID=74039387

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080033390.6A Active CN113785383B (zh) 2019-06-20 2020-06-16 通过选择性氮化硼或氮化铝沉积的高度选择性氧化硅/氮化硅蚀刻

Country Status (6)

Country Link
US (1) US11152217B2 (https=)
JP (1) JP7564605B2 (https=)
KR (1) KR102813067B1 (https=)
CN (1) CN113785383B (https=)
TW (1) TWI829938B (https=)
WO (1) WO2020257160A1 (https=)

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US11315828B2 (en) * 2018-08-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide composite as etch stop layer
KR102660694B1 (ko) * 2019-06-26 2024-04-26 주식회사 히타치하이테크 플라스마 처리 방법
US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
CN116065139B (zh) * 2021-11-02 2024-11-08 东京毅力科创株式会社 成膜方法和成膜装置
CN114050106B (zh) * 2022-01-12 2022-04-15 广州粤芯半导体技术有限公司 掩模层的重工方法及氮化硅蚀刻方法
US12564022B2 (en) 2022-07-11 2026-02-24 Applied Materials, Inc. Carbon hardmask opening using boron nitride mask
KR20250154470A (ko) * 2023-02-24 2025-10-28 어플라이드 머티어리얼스, 인코포레이티드 등각 및 선택적 sin 퇴적
CN121970533A (zh) * 2023-10-02 2026-05-01 中央硝子株式会社 蚀刻方法、半导体器件的制造方法、蚀刻装置、表面处理气体组合物以及含有表面处理材料的蚀刻气体组合物

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JP2600839B2 (ja) * 1988-09-01 1997-04-16 富士通株式会社 窒化シリコン膜のエッチング方法
JP3017898B2 (ja) * 1993-02-12 2000-03-13 財団法人地球環境産業技術研究機構 窒化ホウ素のエッチング方法
JP2002134472A (ja) * 2000-10-20 2002-05-10 Mitsubishi Electric Corp エッチング方法、エッチング装置および半導体装置の製造方法
WO2005017963A2 (en) 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
KR100568257B1 (ko) * 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8722547B2 (en) 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
JP5209859B2 (ja) * 2006-09-19 2013-06-12 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5289111B2 (ja) * 2009-03-09 2013-09-11 三菱電機株式会社 アレーアンテナならびにそれを用いたサイドローブキャンセラおよびアダプティブアンテナ
JP6019640B2 (ja) 2011-03-23 2016-11-02 富士通株式会社 電子デバイス及びその製造方法
TWI492298B (zh) * 2011-08-26 2015-07-11 應用材料股份有限公司 雙重圖案化蝕刻製程
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2017084894A (ja) 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
JP6608332B2 (ja) 2016-05-23 2019-11-20 東京エレクトロン株式会社 成膜装置
JP6671262B2 (ja) * 2016-08-01 2020-03-25 東京エレクトロン株式会社 窒化膜の形成方法および形成装置
KR102722138B1 (ko) * 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법

Also Published As

Publication number Publication date
KR20220024072A (ko) 2022-03-03
CN113785383A (zh) 2021-12-10
TW202111808A (zh) 2021-03-16
JP7564605B2 (ja) 2024-10-09
JP2022537347A (ja) 2022-08-25
WO2020257160A1 (en) 2020-12-24
US11152217B2 (en) 2021-10-19
KR102813067B1 (ko) 2025-05-26
TWI829938B (zh) 2024-01-21
US20200402808A1 (en) 2020-12-24

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