JP7564605B2 - 選択的な窒化ホウ素又は窒化アルミニウムの堆積による高度に選択的な酸化ケイ素／窒化ケイ素のエッチング - Google Patents

選択的な窒化ホウ素又は窒化アルミニウムの堆積による高度に選択的な酸化ケイ素／窒化ケイ素のエッチング Download PDF

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JP7564605B2
JP7564605B2 JP2021575312A JP2021575312A JP7564605B2 JP 7564605 B2 JP7564605 B2 JP 7564605B2 JP 2021575312 A JP2021575312 A JP 2021575312A JP 2021575312 A JP2021575312 A JP 2021575312A JP 7564605 B2 JP7564605 B2 JP 7564605B2
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gas
silicon oxide
layer
substrate
oxide film
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ツァイ，ユ－ハオ
チャン，ドゥ
ワン，ミンメイ
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2021575312A 2019-06-20 2020-06-16 選択的な窒化ホウ素又は窒化アルミニウムの堆積による高度に選択的な酸化ケイ素／窒化ケイ素のエッチング Active JP7564605B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962864378P 2019-06-20 2019-06-20
US62/864,378 2019-06-20
PCT/US2020/037879 WO2020257160A1 (en) 2019-06-20 2020-06-16 Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition

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JP2022537347A JP2022537347A (ja) 2022-08-25
JP2022537347A5 JP2022537347A5 (https=) 2023-06-01
JP7564605B2 true JP7564605B2 (ja) 2024-10-09

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US (1) US11152217B2 (https=)
JP (1) JP7564605B2 (https=)
KR (1) KR102813067B1 (https=)
CN (1) CN113785383B (https=)
TW (1) TWI829938B (https=)
WO (1) WO2020257160A1 (https=)

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US11315828B2 (en) * 2018-08-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide composite as etch stop layer
KR102660694B1 (ko) * 2019-06-26 2024-04-26 주식회사 히타치하이테크 플라스마 처리 방법
US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
CN116065139B (zh) * 2021-11-02 2024-11-08 东京毅力科创株式会社 成膜方法和成膜装置
CN114050106B (zh) * 2022-01-12 2022-04-15 广州粤芯半导体技术有限公司 掩模层的重工方法及氮化硅蚀刻方法
US12564022B2 (en) 2022-07-11 2026-02-24 Applied Materials, Inc. Carbon hardmask opening using boron nitride mask
KR20250154470A (ko) * 2023-02-24 2025-10-28 어플라이드 머티어리얼스, 인코포레이티드 등각 및 선택적 sin 퇴적
CN121970533A (zh) * 2023-10-02 2026-05-01 中央硝子株式会社 蚀刻方法、半导体器件的制造方法、蚀刻装置、表面处理气体组合物以及含有表面处理材料的蚀刻气体组合物

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JP2006041519A (ja) 2004-07-29 2006-02-09 Samsung Electronics Co Ltd デュアルダマシン配線の製造方法
JP2012212877A (ja) 2011-03-23 2012-11-01 National Institute Of Advanced Industrial & Technology 電子デバイス及びその製造方法
JP2017084894A (ja) 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
JP2017212246A (ja) 2016-05-23 2017-11-30 東京エレクトロン株式会社 成膜装置
JP2018022716A (ja) 2016-08-01 2018-02-08 東京エレクトロン株式会社 窒化膜の形成方法および形成装置

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JP3017898B2 (ja) * 1993-02-12 2000-03-13 財団法人地球環境産業技術研究機構 窒化ホウ素のエッチング方法
JP2002134472A (ja) * 2000-10-20 2002-05-10 Mitsubishi Electric Corp エッチング方法、エッチング装置および半導体装置の製造方法
WO2005017963A2 (en) 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8722547B2 (en) 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
JP5209859B2 (ja) * 2006-09-19 2013-06-12 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5289111B2 (ja) * 2009-03-09 2013-09-11 三菱電機株式会社 アレーアンテナならびにそれを用いたサイドローブキャンセラおよびアダプティブアンテナ
TWI492298B (zh) * 2011-08-26 2015-07-11 應用材料股份有限公司 雙重圖案化蝕刻製程
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JP2006041519A (ja) 2004-07-29 2006-02-09 Samsung Electronics Co Ltd デュアルダマシン配線の製造方法
JP2012212877A (ja) 2011-03-23 2012-11-01 National Institute Of Advanced Industrial & Technology 電子デバイス及びその製造方法
JP2017084894A (ja) 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
JP2017212246A (ja) 2016-05-23 2017-11-30 東京エレクトロン株式会社 成膜装置
JP2018022716A (ja) 2016-08-01 2018-02-08 東京エレクトロン株式会社 窒化膜の形成方法および形成装置

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KR20220024072A (ko) 2022-03-03
CN113785383A (zh) 2021-12-10
TW202111808A (zh) 2021-03-16
JP2022537347A (ja) 2022-08-25
WO2020257160A1 (en) 2020-12-24
US11152217B2 (en) 2021-10-19
KR102813067B1 (ko) 2025-05-26
TWI829938B (zh) 2024-01-21
CN113785383B (zh) 2025-11-11
US20200402808A1 (en) 2020-12-24

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