KR102813067B1 - 선택적 붕소 질화물 또는 알루미늄 질화물 증착에 의한 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭 - Google Patents

선택적 붕소 질화물 또는 알루미늄 질화물 증착에 의한 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭 Download PDF

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KR102813067B1
KR102813067B1 KR1020217041299A KR20217041299A KR102813067B1 KR 102813067 B1 KR102813067 B1 KR 102813067B1 KR 1020217041299 A KR1020217041299 A KR 1020217041299A KR 20217041299 A KR20217041299 A KR 20217041299A KR 102813067 B1 KR102813067 B1 KR 102813067B1
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gas
layer
silicon oxide
etching
film
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KR20220024072A (ko
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위-하오 차이
두 장
밍메이 왕
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도쿄엘렉트론가부시키가이샤
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    • H01L21/31144—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H01L21/02178—
    • H01L21/02252—
    • H01L21/0228—
    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020217041299A 2019-06-20 2020-06-16 선택적 붕소 질화물 또는 알루미늄 질화물 증착에 의한 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭 Active KR102813067B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962864378P 2019-06-20 2019-06-20
US62/864,378 2019-06-20
PCT/US2020/037879 WO2020257160A1 (en) 2019-06-20 2020-06-16 Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition

Publications (2)

Publication Number Publication Date
KR20220024072A KR20220024072A (ko) 2022-03-03
KR102813067B1 true KR102813067B1 (ko) 2025-05-26

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KR1020217041299A Active KR102813067B1 (ko) 2019-06-20 2020-06-16 선택적 붕소 질화물 또는 알루미늄 질화물 증착에 의한 고도로 선택적인 실리콘 산화물/실리콘 질화물 에칭

Country Status (6)

Country Link
US (1) US11152217B2 (https=)
JP (1) JP7564605B2 (https=)
KR (1) KR102813067B1 (https=)
CN (1) CN113785383B (https=)
TW (1) TWI829938B (https=)
WO (1) WO2020257160A1 (https=)

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US11315828B2 (en) * 2018-08-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide composite as etch stop layer
KR102660694B1 (ko) * 2019-06-26 2024-04-26 주식회사 히타치하이테크 플라스마 처리 방법
US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
CN116065139B (zh) * 2021-11-02 2024-11-08 东京毅力科创株式会社 成膜方法和成膜装置
CN114050106B (zh) * 2022-01-12 2022-04-15 广州粤芯半导体技术有限公司 掩模层的重工方法及氮化硅蚀刻方法
US12564022B2 (en) 2022-07-11 2026-02-24 Applied Materials, Inc. Carbon hardmask opening using boron nitride mask
KR20250154470A (ko) * 2023-02-24 2025-10-28 어플라이드 머티어리얼스, 인코포레이티드 등각 및 선택적 sin 퇴적
CN121970533A (zh) * 2023-10-02 2026-05-01 中央硝子株式会社 蚀刻方法、半导体器件的制造方法、蚀刻装置、表面处理气体组合物以及含有表面处理材料的蚀刻气体组合物

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JP2600839B2 (ja) * 1988-09-01 1997-04-16 富士通株式会社 窒化シリコン膜のエッチング方法
JP3017898B2 (ja) * 1993-02-12 2000-03-13 財団法人地球環境産業技術研究機構 窒化ホウ素のエッチング方法
JP2002134472A (ja) * 2000-10-20 2002-05-10 Mitsubishi Electric Corp エッチング方法、エッチング装置および半導体装置の製造方法
WO2005017963A2 (en) 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
KR100568257B1 (ko) * 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8722547B2 (en) 2006-04-20 2014-05-13 Applied Materials, Inc. Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
JP5209859B2 (ja) * 2006-09-19 2013-06-12 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5289111B2 (ja) * 2009-03-09 2013-09-11 三菱電機株式会社 アレーアンテナならびにそれを用いたサイドローブキャンセラおよびアダプティブアンテナ
JP6019640B2 (ja) 2011-03-23 2016-11-02 富士通株式会社 電子デバイス及びその製造方法
TWI492298B (zh) * 2011-08-26 2015-07-11 應用材料股份有限公司 雙重圖案化蝕刻製程
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2017084894A (ja) 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
JP6608332B2 (ja) 2016-05-23 2019-11-20 東京エレクトロン株式会社 成膜装置
JP6671262B2 (ja) * 2016-08-01 2020-03-25 東京エレクトロン株式会社 窒化膜の形成方法および形成装置
KR102722138B1 (ko) * 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법

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Publication number Publication date
KR20220024072A (ko) 2022-03-03
CN113785383A (zh) 2021-12-10
TW202111808A (zh) 2021-03-16
JP7564605B2 (ja) 2024-10-09
JP2022537347A (ja) 2022-08-25
WO2020257160A1 (en) 2020-12-24
US11152217B2 (en) 2021-10-19
TWI829938B (zh) 2024-01-21
CN113785383B (zh) 2025-11-11
US20200402808A1 (en) 2020-12-24

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