TWI829746B - 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法 - Google Patents

顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法 Download PDF

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TWI829746B
TWI829746B TW108130547A TW108130547A TWI829746B TW I829746 B TWI829746 B TW I829746B TW 108130547 A TW108130547 A TW 108130547A TW 108130547 A TW108130547 A TW 108130547A TW I829746 B TWI829746 B TW I829746B
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layer
light
oxide
conductive layer
insulating layer
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TW108130547A
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TW202025112A (zh
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山崎舜平
楠紘慈
江口晋吾
池田𨺓之
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日商半導體能源研究所股份有限公司
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
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    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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TW108130547A 2018-09-05 2019-08-27 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法 TWI829746B (zh)

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JP2018-166335 2018-09-05
JP2018-166336 2018-09-05
JP2018166336 2018-09-05
JP2018166335 2018-09-05

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TWI829746B true TWI829746B (zh) 2024-01-21

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US (2) US11908850B2 (enExample)
JP (3) JP7517989B2 (enExample)
KR (1) KR20210043641A (enExample)
CN (2) CN112639937B (enExample)
TW (1) TWI829746B (enExample)
WO (1) WO2020049392A1 (enExample)

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CN108493209B (zh) * 2018-05-24 2020-06-23 京东方科技集团股份有限公司 一种显示基板、显示装置以及显示基板的制作方法
CN117316973A (zh) 2018-09-07 2023-12-29 株式会社半导体能源研究所 显示装置、显示模块及电子设备
KR20200091818A (ko) * 2019-01-23 2020-07-31 소후 인코포레이티드 도포성이 우수한 치과용 도재 페이스트
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