JP7517989B2 - 表示装置、表示モジュール、及び電子機器 - Google Patents

表示装置、表示モジュール、及び電子機器 Download PDF

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Publication number
JP7517989B2
JP7517989B2 JP2020540867A JP2020540867A JP7517989B2 JP 7517989 B2 JP7517989 B2 JP 7517989B2 JP 2020540867 A JP2020540867 A JP 2020540867A JP 2020540867 A JP2020540867 A JP 2020540867A JP 7517989 B2 JP7517989 B2 JP 7517989B2
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layer
insulating layer
conductive layer
oxide
light
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Japanese (ja)
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JPWO2020049392A1 (ja
Inventor
舜平 山崎
紘慈 楠
晋吾 江口
隆之 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2024107866A priority Critical patent/JP7679531B2/ja
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Priority to JP2025077156A priority patent/JP2025114706A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • G—PHYSICS
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
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    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Human Computer Interaction (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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JP2020540867A 2018-09-05 2019-08-22 表示装置、表示モジュール、及び電子機器 Active JP7517989B2 (ja)

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JP2024107866A JP7679531B2 (ja) 2018-09-05 2024-07-04 表示装置
JP2025077156A JP2025114706A (ja) 2018-09-05 2025-05-07 表示装置

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JP2018166335 2018-09-05
JP2018166336 2018-09-05
JP2018166336 2018-09-05
JP2018166335 2018-09-05
PCT/IB2019/057065 WO2020049392A1 (ja) 2018-09-05 2019-08-22 表示装置、表示モジュール、電子機器、及び表示装置の作製方法

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JP7517989B2 true JP7517989B2 (ja) 2024-07-17

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108493209B (zh) * 2018-05-24 2020-06-23 京东方科技集团股份有限公司 一种显示基板、显示装置以及显示基板的制作方法
CN117316973A (zh) 2018-09-07 2023-12-29 株式会社半导体能源研究所 显示装置、显示模块及电子设备
KR20200091818A (ko) * 2019-01-23 2020-07-31 소후 인코포레이티드 도포성이 우수한 치과용 도재 페이스트
WO2020217959A1 (ja) * 2019-04-23 2020-10-29 京セラ株式会社 マイクロｌｅｄ素子基板および表示装置
KR20220017474A (ko) 2019-06-07 2022-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 디바이스
US11710760B2 (en) * 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
CN114514618A (zh) * 2019-09-20 2022-05-17 德国亚琛工业大学 用于针对单个电子运动的分岔的连接部件
JP7609800B2 (ja) 2019-11-21 2025-01-07 株式会社半導体エネルギー研究所 表示装置の作製方法
KR102882579B1 (ko) * 2020-04-27 2025-11-07 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
JP7647012B2 (ja) * 2020-06-18 2025-03-18 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
FR3112902B1 (fr) * 2020-07-22 2022-12-16 Aledia Dispositif optoélectronique flexible et son procédé de fabrication
JP7619013B2 (ja) * 2020-11-17 2025-01-22 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法および電子機器
JP7621783B2 (ja) * 2020-12-10 2025-01-27 スタンレー電気株式会社 半導体発光装置及び半導体発光素子の支持基板
JP7761601B2 (ja) 2021-02-12 2025-10-28 株式会社半導体エネルギー研究所 表示装置、電子機器
CN115148887A (zh) * 2021-03-31 2022-10-04 中强光电股份有限公司 发光二极管线路基板及其制造方法
WO2022238797A1 (ja) 2021-05-13 2022-11-17 株式会社半導体エネルギー研究所 電子機器
JP7652632B2 (ja) * 2021-06-09 2025-03-27 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
US12300174B2 (en) 2021-08-12 2025-05-13 Semiconductor Energy Laboratory Co., Ltd. Correction method of display apparatus including pixel and plurality of circuits
CN114388486B (zh) * 2021-12-16 2025-07-11 Tcl华星光电技术有限公司 显示面板及其制作方法
CN114068610B (zh) * 2021-12-16 2024-11-22 宁波升谱光电股份有限公司 一种功率开关器件及其制作方法

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013137509A (ja) 2011-10-18 2013-07-11 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015501085A (ja) 2011-12-22 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 表示装置および表示装置の製造方法
JP2015109252A (ja) 2013-04-15 2015-06-11 株式会社半導体エネルギー研究所 発光装置
JP2016512347A (ja) 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション 冗長性スキームを備えた発光ダイオードディスプレイ、及び統合欠陥検出検査を備えた発光ダイオードディスプレイを製造する方法
JP2016174143A (ja) 2015-01-26 2016-09-29 株式会社半導体エネルギー研究所 半導体装置およびその製造方法
US20160372514A1 (en) 2015-06-16 2016-12-22 Au Optronics Corporation Light emitting diode display and manufacturing method thereof
WO2016203340A1 (ja) 2015-06-19 2016-12-22 株式会社半導体エネルギー研究所 表示装置の作製方法、表示装置、電子機器、プロジェクター、及びヘッドマウントディスプレイ
JP6131374B1 (ja) 2016-07-18 2017-05-17 ルーメンス カンパニー リミテッド マイクロｌｅｄアレイディスプレイ装置
JP2017130647A (ja) 2015-12-11 2017-07-27 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
US20170345801A1 (en) 2016-05-25 2017-11-30 Innolux Corporation Display apparatus and fabricating method thereof
JP2017538290A (ja) 2014-11-18 2017-12-21 オキュラス ブイアール，エルエルシー 集積型カラーｌｅｄマイクロディスプレイ
US20180083218A1 (en) 2016-09-22 2018-03-22 Samsung Display Co., Ltd. Display apparatus
JP2018078279A (ja) 2016-09-15 2018-05-17 イーラックス・インコーポレイテッドｅＬｕｘ Ｉｎｃ． 表面実装型発光素子を有するディスプレイ
US20180166643A1 (en) 2016-12-13 2018-06-14 Lg Display Co., Ltd. Quantum light emitting diode and quantum light emitting device including the same
WO2018116814A1 (ja) 2016-12-22 2018-06-28 シャープ株式会社 表示装置および製造方法
US20190305202A1 (en) 2018-04-03 2019-10-03 Samsung Electronics Co., Ltd. Light emitting diode display device
CN113140661A (zh) 2021-04-30 2021-07-20 上海天马微电子有限公司 一种显示面板和显示装置

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6131374Y2 (enExample) 1980-06-18 1986-09-12
TW540251B (en) * 1999-09-24 2003-07-01 Semiconductor Energy Lab EL display device and method for driving the same
JP3973471B2 (ja) 2001-12-14 2007-09-12 三洋電機株式会社 デジタル駆動型表示装置
US7230374B2 (en) * 2003-09-22 2007-06-12 Samsung Sdi Co., Ltd. Full color organic light-emitting device having color modulation layer
EP1879170A1 (en) 2006-07-10 2008-01-16 THOMSON Licensing Current drive for light emitting diodes
TWI406589B (zh) 2008-10-28 2013-08-21 Ind Tech Res Inst Ｌｅｄ光源控制電路與方法，及應用其之影像顯示裝置與照明設備
JP2013145833A (ja) 2012-01-16 2013-07-25 Fujifilm Corp Ｌｅｄ発光素子用反射基板およびｌｅｄパッケージ
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US9153171B2 (en) 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
US8791474B1 (en) 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
JP6157178B2 (ja) 2013-04-01 2017-07-05 ソニーセミコンダクタソリューションズ株式会社 表示装置
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
JP6402017B2 (ja) * 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
US9231153B2 (en) 2014-05-30 2016-01-05 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
US9105813B1 (en) 2014-05-30 2015-08-11 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
US9590137B2 (en) 2014-05-30 2017-03-07 Mikro Mesa Technology Co., Ltd. Light-emitting diode
US9219197B1 (en) 2014-05-30 2015-12-22 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
WO2015181678A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and electronic device
US10158043B2 (en) 2014-05-30 2018-12-18 Mikro Mesa Technolgy Co., Ltd. Light-emitting diode and method for manufacturing the same
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
US9917226B1 (en) 2016-09-15 2018-03-13 Sharp Kabushiki Kaisha Substrate features for enhanced fluidic assembly of electronic devices
CN105700723B (zh) * 2014-11-28 2019-03-08 昆山国显光电有限公司 一种具有触控装置的有机发光显示器及其制造方法
US9653642B1 (en) * 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
CN112436021B (zh) 2015-02-04 2025-06-06 株式会社半导体能源研究所 半导体装置的制造方法
TWI749726B (zh) 2015-03-09 2021-12-11 日商半導體能源研究所股份有限公司 發光元件、顯示裝置、電子裝置及照明設備
US20170062749A1 (en) 2015-09-01 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
US20170090246A1 (en) 2015-09-25 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
WO2017098375A1 (en) 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2017115208A1 (en) 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Device, television system, and electronic device
JP2017157724A (ja) 2016-03-02 2017-09-07 デクセリアルズ株式会社 表示装置及びその製造方法、並びに発光装置及びその製造方法
KR102610027B1 (ko) 2016-03-04 2023-12-11 삼성디스플레이 주식회사 표시 장치
WO2017217703A1 (en) * 2016-06-13 2017-12-21 Seoul Semiconductor Co., Ltd Display apparatus and manufacturing method thereof
US10332949B2 (en) 2016-07-06 2019-06-25 Seoul Semiconductor Co., Ltd. Display apparatus
KR20180020091A (ko) * 2016-08-17 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102651097B1 (ko) 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
WO2018172881A1 (ja) 2017-03-24 2018-09-27 株式会社半導体エネルギー研究所 半導体装置、表示システム及び電子機器
CN106952941B (zh) * 2017-05-26 2020-10-09 上海天马有机发光显示技术有限公司 一种显示面板、制作方法及电子设备
KR102374754B1 (ko) * 2017-09-27 2022-03-15 엘지디스플레이 주식회사 터치 구조물을 포함하는 디스플레이 장치
TWI798308B (zh) 2017-12-25 2023-04-11 日商半導體能源研究所股份有限公司 顯示器及包括該顯示器的電子裝置
US10784240B2 (en) * 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
KR102521100B1 (ko) * 2018-01-08 2023-04-14 삼성디스플레이 주식회사 표시 장치
JP7326257B2 (ja) 2018-05-17 2023-08-15 株式会社半導体エネルギー研究所 表示装置
US11961871B2 (en) 2018-05-18 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for fabricating display device
US11710760B2 (en) 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013137509A (ja) 2011-10-18 2013-07-11 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015501085A (ja) 2011-12-22 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 表示装置および表示装置の製造方法
JP2016512347A (ja) 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション 冗長性スキームを備えた発光ダイオードディスプレイ、及び統合欠陥検出検査を備えた発光ダイオードディスプレイを製造する方法
JP2015109252A (ja) 2013-04-15 2015-06-11 株式会社半導体エネルギー研究所 発光装置
JP2017538290A (ja) 2014-11-18 2017-12-21 オキュラス ブイアール，エルエルシー 集積型カラーｌｅｄマイクロディスプレイ
JP2016174143A (ja) 2015-01-26 2016-09-29 株式会社半導体エネルギー研究所 半導体装置およびその製造方法
US20160372514A1 (en) 2015-06-16 2016-12-22 Au Optronics Corporation Light emitting diode display and manufacturing method thereof
WO2016203340A1 (ja) 2015-06-19 2016-12-22 株式会社半導体エネルギー研究所 表示装置の作製方法、表示装置、電子機器、プロジェクター、及びヘッドマウントディスプレイ
JP2017130647A (ja) 2015-12-11 2017-07-27 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
US20170345801A1 (en) 2016-05-25 2017-11-30 Innolux Corporation Display apparatus and fabricating method thereof
JP6131374B1 (ja) 2016-07-18 2017-05-17 ルーメンス カンパニー リミテッド マイクロｌｅｄアレイディスプレイ装置
JP2018078279A (ja) 2016-09-15 2018-05-17 イーラックス・インコーポレイテッドｅＬｕｘ Ｉｎｃ． 表面実装型発光素子を有するディスプレイ
US20180083218A1 (en) 2016-09-22 2018-03-22 Samsung Display Co., Ltd. Display apparatus
US20180166643A1 (en) 2016-12-13 2018-06-14 Lg Display Co., Ltd. Quantum light emitting diode and quantum light emitting device including the same
WO2018116814A1 (ja) 2016-12-22 2018-06-28 シャープ株式会社 表示装置および製造方法
US20190305202A1 (en) 2018-04-03 2019-10-03 Samsung Electronics Co., Ltd. Light emitting diode display device
CN113140661A (zh) 2021-04-30 2021-07-20 上海天马微电子有限公司 一种显示面板和显示装置

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