TWI819205B - 製造含氧化鉬層的濺鍍靶 - Google Patents

製造含氧化鉬層的濺鍍靶 Download PDF

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Publication number
TWI819205B
TWI819205B TW109109436A TW109109436A TWI819205B TW I819205 B TWI819205 B TW I819205B TW 109109436 A TW109109436 A TW 109109436A TW 109109436 A TW109109436 A TW 109109436A TW I819205 B TWI819205 B TW I819205B
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TW
Taiwan
Prior art keywords
target
target material
oxide
sputtering
phase
Prior art date
Application number
TW109109436A
Other languages
English (en)
Chinese (zh)
Other versions
TW202104623A (zh
Inventor
麥可 歐蘇利凡
傑格 溫克勒
安瑞克 法蘭斯格
克里斯汀 林克
托馬士 薛惹
Original Assignee
奧地利商攀時歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 奧地利商攀時歐洲公司 filed Critical 奧地利商攀時歐洲公司
Publication of TW202104623A publication Critical patent/TW202104623A/zh
Application granted granted Critical
Publication of TWI819205B publication Critical patent/TWI819205B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW109109436A 2019-03-29 2020-03-20 製造含氧化鉬層的濺鍍靶 TWI819205B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19166312.9A EP3715496B1 (de) 2019-03-29 2019-03-29 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten
EP19166312.9 2019-03-29

Publications (2)

Publication Number Publication Date
TW202104623A TW202104623A (zh) 2021-02-01
TWI819205B true TWI819205B (zh) 2023-10-21

Family

ID=66041301

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109109436A TWI819205B (zh) 2019-03-29 2020-03-20 製造含氧化鉬層的濺鍍靶

Country Status (6)

Country Link
EP (1) EP3715496B1 (https=)
JP (1) JP7580390B2 (https=)
KR (1) KR102886784B1 (https=)
CN (1) CN113614278B (https=)
TW (1) TWI819205B (https=)
WO (1) WO2020200605A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022014783A (ja) * 2020-07-07 2022-01-20 三菱マテリアル株式会社 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法
CN114916228B (zh) * 2020-12-10 2023-08-15 Lt金属株式会社 以钼氧化物为主成分的金属氧化物烧结体及包含其的溅射靶材
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) * 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
KR102917229B1 (ko) 2021-10-14 2026-01-28 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200728237A (en) * 2005-09-29 2007-08-01 Starck H C Gmbh Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
DE102012112742A1 (de) * 2012-10-23 2014-04-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hoch absorbierendes Schichtsystem, Verfahren zur Herstellung des Schichtsystems und dafür geeignetes Sputtertarget

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0852266B1 (en) 1995-08-23 2004-10-13 Asahi Glass Ceramics Co., Ltd. Target, process for production thereof, and method of forming highly refractive film
CA2533110A1 (en) * 2003-07-22 2005-05-06 H.C. Starck Inc. Method of making m002 powders, products made from m002 powders, deposition of m002 thin films, and methods of using such materials
US7754185B2 (en) * 2004-06-29 2010-07-13 H.C. Starck Inc. Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2013020347A (ja) 2011-07-08 2013-01-31 Toppan Printing Co Ltd タッチパネルおよびタッチパネルの製造方法
DE102013103679A1 (de) * 2013-04-11 2014-10-30 Heraeus Materials Technology Gmbh & Co. Kg Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget
KR102316360B1 (ko) * 2013-10-29 2021-10-22 플란제 에스이 스퍼터링 타깃 및 제조방법
DE102014111935A1 (de) 2014-08-20 2016-02-25 Heraeus Deutschland GmbH & Co. KG Zweilagiges Schichtsystem mit teilabsorbierender Schicht sowie Verfahren und Sputtertarget zur Herstellung dieser Schicht

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200728237A (en) * 2005-09-29 2007-08-01 Starck H C Gmbh Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
DE102012112742A1 (de) * 2012-10-23 2014-04-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hoch absorbierendes Schichtsystem, Verfahren zur Herstellung des Schichtsystems und dafür geeignetes Sputtertarget

Also Published As

Publication number Publication date
KR20210145172A (ko) 2021-12-01
CN113614278B (zh) 2024-01-30
EP3715496B1 (de) 2024-07-17
JP2022526163A (ja) 2022-05-23
TW202104623A (zh) 2021-02-01
WO2020200605A1 (de) 2020-10-08
JP7580390B2 (ja) 2024-11-11
EP3715496A1 (de) 2020-09-30
CN113614278A (zh) 2021-11-05
KR102886784B1 (ko) 2025-11-14

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