JP7580390B2 - 酸化モリブデン含有層を製造するためのスパッタリングターゲット - Google Patents

酸化モリブデン含有層を製造するためのスパッタリングターゲット Download PDF

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Publication number
JP7580390B2
JP7580390B2 JP2021557471A JP2021557471A JP7580390B2 JP 7580390 B2 JP7580390 B2 JP 7580390B2 JP 2021557471 A JP2021557471 A JP 2021557471A JP 2021557471 A JP2021557471 A JP 2021557471A JP 7580390 B2 JP7580390 B2 JP 7580390B2
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Prior art keywords
target material
oxide
sputtering
phase
target
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Japanese (ja)
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JP2022526163A5 (https=
JP2022526163A (ja
Inventor
オーサリバン，ミヒャエル
ヴィンクラー，イェルク
フランツケ，エンリコ
リンケ，クリスティアン
シェーラー，トーマス
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Plansee SE
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Plansee SE
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2021557471A 2019-03-29 2020-03-03 酸化モリブデン含有層を製造するためのスパッタリングターゲット Active JP7580390B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19166312.9A EP3715496B1 (de) 2019-03-29 2019-03-29 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten
EP19166312.9 2019-03-29
PCT/EP2020/055481 WO2020200605A1 (de) 2019-03-29 2020-03-03 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten

Publications (3)

Publication Number Publication Date
JP2022526163A JP2022526163A (ja) 2022-05-23
JP2022526163A5 JP2022526163A5 (https=) 2022-12-28
JP7580390B2 true JP7580390B2 (ja) 2024-11-11

Family

ID=66041301

Family Applications (1)

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JP2021557471A Active JP7580390B2 (ja) 2019-03-29 2020-03-03 酸化モリブデン含有層を製造するためのスパッタリングターゲット

Country Status (6)

Country Link
EP (1) EP3715496B1 (https=)
JP (1) JP7580390B2 (https=)
KR (1) KR102886784B1 (https=)
CN (1) CN113614278B (https=)
TW (1) TWI819205B (https=)
WO (1) WO2020200605A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022014783A (ja) * 2020-07-07 2022-01-20 三菱マテリアル株式会社 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法
CN114916228B (zh) * 2020-12-10 2023-08-15 Lt金属株式会社 以钼氧化物为主成分的金属氧化物烧结体及包含其的溅射靶材
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) * 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
KR102917229B1 (ko) 2021-10-14 2026-01-28 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016504484A (ja) 2012-10-23 2016-02-12 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 高吸収性層系、この層系の製造方法及びこのために適したスパッタターゲット
JP2017525852A (ja) 2014-08-20 2017-09-07 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 部分吸収性層を有する二重層系ならびに該層の製造方法および該層の製造のためのスパッタリングターゲット

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0852266B1 (en) 1995-08-23 2004-10-13 Asahi Glass Ceramics Co., Ltd. Target, process for production thereof, and method of forming highly refractive film
CA2533110A1 (en) * 2003-07-22 2005-05-06 H.C. Starck Inc. Method of making m002 powders, products made from m002 powders, deposition of m002 thin films, and methods of using such materials
US7754185B2 (en) * 2004-06-29 2010-07-13 H.C. Starck Inc. Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
US20070071985A1 (en) * 2005-09-29 2007-03-29 Prabhat Kumar Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2013020347A (ja) 2011-07-08 2013-01-31 Toppan Printing Co Ltd タッチパネルおよびタッチパネルの製造方法
DE102013103679A1 (de) * 2013-04-11 2014-10-30 Heraeus Materials Technology Gmbh & Co. Kg Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget
KR102316360B1 (ko) * 2013-10-29 2021-10-22 플란제 에스이 스퍼터링 타깃 및 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016504484A (ja) 2012-10-23 2016-02-12 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 高吸収性層系、この層系の製造方法及びこのために適したスパッタターゲット
JP2017525852A (ja) 2014-08-20 2017-09-07 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 部分吸収性層を有する二重層系ならびに該層の製造方法および該層の製造のためのスパッタリングターゲット

Also Published As

Publication number Publication date
KR20210145172A (ko) 2021-12-01
CN113614278B (zh) 2024-01-30
EP3715496B1 (de) 2024-07-17
JP2022526163A (ja) 2022-05-23
TW202104623A (zh) 2021-02-01
TWI819205B (zh) 2023-10-21
WO2020200605A1 (de) 2020-10-08
EP3715496A1 (de) 2020-09-30
CN113614278A (zh) 2021-11-05
KR102886784B1 (ko) 2025-11-14

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