CN113614278B - 用于制备含氧化钼层的溅射靶 - Google Patents

用于制备含氧化钼层的溅射靶 Download PDF

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Publication number
CN113614278B
CN113614278B CN202080024251.7A CN202080024251A CN113614278B CN 113614278 B CN113614278 B CN 113614278B CN 202080024251 A CN202080024251 A CN 202080024251A CN 113614278 B CN113614278 B CN 113614278B
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China
Prior art keywords
target
oxide
phase
volume
stoichiometric
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Chinese (zh)
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CN113614278A (zh
Inventor
迈克尔·奥沙利文
约尔格·温克勒
恩里科·弗兰兹克
克里斯汀·林克
托马斯·谢勒
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Plansee SE
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Plansee SE
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CN202080024251.7A 2019-03-29 2020-03-03 用于制备含氧化钼层的溅射靶 Active CN113614278B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19166312.9A EP3715496B1 (de) 2019-03-29 2019-03-29 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten
EP19166312.9 2019-03-29
PCT/EP2020/055481 WO2020200605A1 (de) 2019-03-29 2020-03-03 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten

Publications (2)

Publication Number Publication Date
CN113614278A CN113614278A (zh) 2021-11-05
CN113614278B true CN113614278B (zh) 2024-01-30

Family

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Application Number Title Priority Date Filing Date
CN202080024251.7A Active CN113614278B (zh) 2019-03-29 2020-03-03 用于制备含氧化钼层的溅射靶

Country Status (6)

Country Link
EP (1) EP3715496B1 (https=)
JP (1) JP7580390B2 (https=)
KR (1) KR102886784B1 (https=)
CN (1) CN113614278B (https=)
TW (1) TWI819205B (https=)
WO (1) WO2020200605A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022014783A (ja) * 2020-07-07 2022-01-20 三菱マテリアル株式会社 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法
CN114916228B (zh) * 2020-12-10 2023-08-15 Lt金属株式会社 以钼氧化物为主成分的金属氧化物烧结体及包含其的溅射靶材
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) * 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
KR102917229B1 (ko) 2021-10-14 2026-01-28 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104937443A (zh) * 2012-10-23 2015-09-23 贺利氏德国有限及两合公司 高度吸收层系统、其制造方法和适用于其的溅射靶材

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EP0852266B1 (en) 1995-08-23 2004-10-13 Asahi Glass Ceramics Co., Ltd. Target, process for production thereof, and method of forming highly refractive film
CA2533110A1 (en) * 2003-07-22 2005-05-06 H.C. Starck Inc. Method of making m002 powders, products made from m002 powders, deposition of m002 thin films, and methods of using such materials
US7754185B2 (en) * 2004-06-29 2010-07-13 H.C. Starck Inc. Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
US20070071985A1 (en) * 2005-09-29 2007-03-29 Prabhat Kumar Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2013020347A (ja) 2011-07-08 2013-01-31 Toppan Printing Co Ltd タッチパネルおよびタッチパネルの製造方法
DE102013103679A1 (de) * 2013-04-11 2014-10-30 Heraeus Materials Technology Gmbh & Co. Kg Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget
KR102316360B1 (ko) * 2013-10-29 2021-10-22 플란제 에스이 스퍼터링 타깃 및 제조방법
DE102014111935A1 (de) 2014-08-20 2016-02-25 Heraeus Deutschland GmbH & Co. KG Zweilagiges Schichtsystem mit teilabsorbierender Schicht sowie Verfahren und Sputtertarget zur Herstellung dieser Schicht

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104937443A (zh) * 2012-10-23 2015-09-23 贺利氏德国有限及两合公司 高度吸收层系统、其制造方法和适用于其的溅射靶材

Also Published As

Publication number Publication date
KR20210145172A (ko) 2021-12-01
EP3715496B1 (de) 2024-07-17
JP2022526163A (ja) 2022-05-23
TW202104623A (zh) 2021-02-01
TWI819205B (zh) 2023-10-21
WO2020200605A1 (de) 2020-10-08
JP7580390B2 (ja) 2024-11-11
EP3715496A1 (de) 2020-09-30
CN113614278A (zh) 2021-11-05
KR102886784B1 (ko) 2025-11-14

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