JP2022526163A5 - - Google Patents

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Publication number
JP2022526163A5
JP2022526163A5 JP2021557471A JP2021557471A JP2022526163A5 JP 2022526163 A5 JP2022526163 A5 JP 2022526163A5 JP 2021557471 A JP2021557471 A JP 2021557471A JP 2021557471 A JP2021557471 A JP 2021557471A JP 2022526163 A5 JP2022526163 A5 JP 2022526163A5
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JP
Japan
Prior art keywords
target material
sputtering
sputtering target
stoichiometric
target according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021557471A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022526163A (ja
JP7580390B2 (ja
Filing date
Publication date
Priority claimed from EP19166312.9A external-priority patent/EP3715496B1/de
Application filed filed Critical
Publication of JP2022526163A publication Critical patent/JP2022526163A/ja
Publication of JP2022526163A5 publication Critical patent/JP2022526163A5/ja
Application granted granted Critical
Publication of JP7580390B2 publication Critical patent/JP7580390B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021557471A 2019-03-29 2020-03-03 酸化モリブデン含有層を製造するためのスパッタリングターゲット Active JP7580390B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19166312.9A EP3715496B1 (de) 2019-03-29 2019-03-29 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten
EP19166312.9 2019-03-29
PCT/EP2020/055481 WO2020200605A1 (de) 2019-03-29 2020-03-03 Sputteringtarget zur herstellung molybdänoxidhaltiger schichten

Publications (3)

Publication Number Publication Date
JP2022526163A JP2022526163A (ja) 2022-05-23
JP2022526163A5 true JP2022526163A5 (https=) 2022-12-28
JP7580390B2 JP7580390B2 (ja) 2024-11-11

Family

ID=66041301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021557471A Active JP7580390B2 (ja) 2019-03-29 2020-03-03 酸化モリブデン含有層を製造するためのスパッタリングターゲット

Country Status (6)

Country Link
EP (1) EP3715496B1 (https=)
JP (1) JP7580390B2 (https=)
KR (1) KR102886784B1 (https=)
CN (1) CN113614278B (https=)
TW (1) TWI819205B (https=)
WO (1) WO2020200605A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022014783A (ja) * 2020-07-07 2022-01-20 三菱マテリアル株式会社 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法
CN114916228B (zh) * 2020-12-10 2023-08-15 Lt金属株式会社 以钼氧化物为主成分的金属氧化物烧结体及包含其的溅射靶材
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) * 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
KR102917229B1 (ko) 2021-10-14 2026-01-28 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0852266B1 (en) 1995-08-23 2004-10-13 Asahi Glass Ceramics Co., Ltd. Target, process for production thereof, and method of forming highly refractive film
CA2533110A1 (en) * 2003-07-22 2005-05-06 H.C. Starck Inc. Method of making m002 powders, products made from m002 powders, deposition of m002 thin films, and methods of using such materials
US7754185B2 (en) * 2004-06-29 2010-07-13 H.C. Starck Inc. Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
US20070071985A1 (en) * 2005-09-29 2007-03-29 Prabhat Kumar Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2013020347A (ja) 2011-07-08 2013-01-31 Toppan Printing Co Ltd タッチパネルおよびタッチパネルの製造方法
DE102012112742A1 (de) 2012-10-23 2014-04-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hoch absorbierendes Schichtsystem, Verfahren zur Herstellung des Schichtsystems und dafür geeignetes Sputtertarget
DE102013103679A1 (de) * 2013-04-11 2014-10-30 Heraeus Materials Technology Gmbh & Co. Kg Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget
KR102316360B1 (ko) * 2013-10-29 2021-10-22 플란제 에스이 스퍼터링 타깃 및 제조방법
DE102014111935A1 (de) 2014-08-20 2016-02-25 Heraeus Deutschland GmbH & Co. KG Zweilagiges Schichtsystem mit teilabsorbierender Schicht sowie Verfahren und Sputtertarget zur Herstellung dieser Schicht

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