TWI819094B - Mn-Ta-W-Cu-O系濺鍍靶材及其製造方法 - Google Patents

Mn-Ta-W-Cu-O系濺鍍靶材及其製造方法 Download PDF

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TWI819094B
TWI819094B TW108133805A TW108133805A TWI819094B TW I819094 B TWI819094 B TW I819094B TW 108133805 A TW108133805 A TW 108133805A TW 108133805 A TW108133805 A TW 108133805A TW I819094 B TWI819094 B TW I819094B
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powder
sputtering target
atomic
sputtering
manufacturing
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TW108133805A
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TW202024371A (zh
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加守雄一
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日商迪睿合股份有限公司
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract

本發明提供一種濺鍍靶材及其製造方法，該濺鍍靶材係成分組成中包含Mn、Ta、W、Cu、及O之Mn-Ta-W-Cu-O系濺鍍靶材，其相對密度為90%以上，且含有Mn4 Ta2 O9 之結晶相。

Description

Mn-Ta-W-Cu-O系濺鍍靶材及其製造方法
本發明尤其是關於一種用於形成光資訊記錄媒體之記錄層之Mn-Ta-W-Cu-O系濺鍍靶材及其製造方法。
近年來於光資訊記錄媒體(光碟)之領域中，伴隨處理資料之增大等，追求光碟之大容量化。光碟大體分為讀入專用與記錄型，記錄型進而細分為可錄式與覆寫式之2種。作為可錄式之記錄層材料，先前廣泛研究使用有機色素材料，但伴隨近年來之大容量化，亦開始廣泛研究使用無機材料。
作為使用無機材料之有用之記錄方式，有利用以下原理之記錄方式：藉由對包含分解溫度較低之無機氧化物之記錄層照射雷射光，使記錄層之物性變化，伴隨於此，光學常數發生變化。作為無機氧化物材料，鈀氧化物已得到實用化。但，Pd為貴金屬，材料成本較高，因此期望開發可代替鈀氧化物以廉價之材料成本實現之記錄層。
作為以廉價之材料成本獲得足夠良好之記錄特性者，正在對包含錳氧化物系材料之記錄層進行開發。例如於專利文獻1中，揭示有包含錳氧化物及W等複數種無機元素之記錄層、以及用於形成該記錄層之濺鍍靶材。 [先前技術文獻] [專利文獻]
專利文獻1：國際公開第2013/183277號
[發明所欲解決之問題]
此處，作為用以形成上述包含錳氧化物及W等複數種無機元素之記錄層之濺鍍法，有使用包含各元素之複數種濺鍍靶材之多元濺鍍法、及使用含有複數種元素之1片複合濺鍍靶材之方法。於專利文獻1中，揭示有多元濺鍍法，但其存在如下缺點：裝置大型化而成為使成本上升之因素，而且容易產生組成偏差。因此，較佳為使用1片複合濺鍍靶材之濺鍍。又，就生產性之觀點而言，相比高頻濺鍍，更理想為使用直流(DC)濺鍍。
但，於包含錳氧化物及W等複數種無機元素之複合濺鍍靶材中，容易包含WMnO4 等絕緣粒。於DC濺鍍中，要對複合濺鍍靶材施加直流電壓，因此於因複合濺鍍靶材中之絕緣粒之影響導致無法獲得充分之導電性之情形時，有發生異常放電(電弧)之虞。該成膜中之異常放電會對記錄層造成損傷，成為良率降低之原因。
本發明係鑒於上述完成者，其目的在於提供一種當供至DC濺鍍時異常放電得到抑制且能夠穩定成膜之Mn-Ta-W-Cu-O系濺鍍靶材及其製造方法。 [解決問題之技術手段]
為了達成上述目的，本發明提供一種濺鍍靶材，其係成分組成中包含Mn、Ta、W、Cu、及O之Mn-Ta-W-Cu-O系濺鍍靶材，其相對密度為90%以上，且含有Mn4 Ta2 O9 之結晶相。
上述成分組成亦可為相對於除O以外之構成元素之合計100原子%，Ta與W之合計比率未達65原子%。
上述濺鍍靶材亦可於上述成分組成中進而包含Zn。
上述濺鍍靶材亦可於上述成分組成中進而包含選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素。
上述選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素之合計含有率亦可相對於除O以外之構成元素之合計100原子%為8原子%～70原子%。
又，本發明提供一種上述Mn-Ta-W-Cu-O系濺鍍靶材之製造方法，其包括：混合步驟，其係將含有含錳粉末、金屬鉭粉末、含鎢粉末、含銅粉末之混合粉末濕式混合10小時以上；及燒結步驟，其係於上述混合步驟之後，對上述混合粉末施加550 kgf/cm2 以上之壓力，並於750℃～950℃之溫度下進行燒結。
亦可為上述含錳粉末為錳氧化物粉末，上述含鎢粉末為金屬鎢粉末，上述含銅粉末為金屬銅粉末。
上述混合粉末亦可進而包含鋅氧化物粉末。
上述混合粉末亦可進而含有包含選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素之單質或化合物的粉末。 [發明之效果]
根據本發明，可提供當供至DC濺鍍時異常放電得到抑制且能夠穩定成膜之Mn-Ta-W-Cu-O系濺鍍靶材及其製造方法。
以下，對於本實施形態詳細地進行說明。
[Mn-Ta-W-Cu-O系濺鍍靶材] 本實施形態之Mn-Ta-W-Cu-O系濺鍍靶材(以下簡稱為「靶材」)於成分組成中包含Mn、Ta、W、Cu、及O，其相對密度為90%以上，且含有Mn4 Ta2 O9 之結晶相。
根據本實施形態之靶材，當供至DC濺鍍時異常放電得到抑制且能夠穩定成膜。
作為本實施形態之靶材之成分比，並無特別限制，可視目的適當選擇。例如亦可為相對於除O(氧)以外之構成元素之合計100原子%，Mn為5原子%～40原子%，Ta為10原子%～35原子%，W為5原子%～30原子%，Cu為5原子%～30原子%。
本實施形態之靶材較佳為相對於除O以外之構成元素之合計100原子%，Ta與W之合計比率未達65原子%，亦可未達60原子%，亦可未達55原子%。相對於除O以外之構成元素之合計100原子%，Ta與W之合計比率未達65原子%時，相較於為65原子%時，存在可容易地將相對密度調整為90%以上之傾向。關於下限並無特別限制，較佳為相對於除O以外之構成元素之合計100原子%，Ta與W之合計比率為25原子%以上。
本實施形態之靶材亦可於成分組成中包含Zn。關於成分比並無特別限制，可視目的適當選擇。例如亦可為相對於除O以外之構成元素之合計100原子%，Zn為1原子%～35原子%。
本實施形態之靶材亦可視需要包含其他成分組成。藉由適當含有其他元素，例如於為了形成資訊記錄媒體之記錄層而使用靶材之情形時，可調整記錄層之透過率、反射率、及記錄感度。作為其他元素，例如可列舉：選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素。
於含有上述選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素之情形時，其合計之含有率例如可設為相對於靶材之構成元素中除O以外之構成元素之合計100%為8原子%～70原子%。
又，本實施形態之靶材包含Mn4 Ta2 O9 之結晶相。
靶材所包含之結晶相可藉由X射線繞射法確認。靶材之X射線繞射光譜可按通常方法獲取。例如可使用Rigaku股份有限公司製造之SmartLab，對靶材表面進行θ-2θ掃描，獲取光譜。X射線繞射之測定條件係視靶材適當決定，例如可自以下之條件之範圍內選擇。 X射線源：Cu-Kα射線 輸出設定：20 kV～100 kV、10 mA～100 mA 測角範圍：2θ＝5°～80° 掃描速度：1°～4°(2θ/min)、連續掃描 發散狹縫：0.5°～2° 散射狹縫：0.5°～2° 受光狹縫：0.1 mm～0.5 mm
靶材之主要結晶相之繞射峰係於以下之範圍內被檢測到。 Mn4 Ta2 O9 之繞射峰：31.5°±0.3° MnTa2 O6 之繞射峰：29.7°±0.3° W之繞射峰：40.26°±0.3° MnO之繞射峰：35.16°±0.3°、40.99°±0.3°、59.18°±0.3° MnWO4 之繞射峰：29.8°±0.3°、30.23°±0.3° ZnO之繞射峰：36.3°±0.3° Cu之繞射峰：43.47°±0.3°、50.67°±0.3°
作為本實施形態之靶材表現出高密度之指標，本說明書中使用相對密度。靶材之相對密度為90%以上，越高越好。
再者，相對密度係指將原料成分燒結後之實測密度相對於假設填充有100%靶材之原料粉並進行計算時之假想密度的比率。為了計算相對密度，首先進行靶材之尺寸測定及重量測定，計算出實測密度。其次，使用以下之計算式算出相對密度。 相對密度(%)＝(燒結體之實測密度/假想密度)×100
再者，本實施形態之靶材之形狀並無任何限定，可設為圓盤狀、圓筒狀、四邊形板狀、長方形板狀、正方形板狀等任意形狀，可視靶材之用途適當選擇。又，關於靶材之寬度及深度之大小(於圓形之情形時為直徑)，亦可於mm級～m級程度之範圍內視靶材之用途適當選擇。例如於靶材為圓形之情形時，通常為直徑50 mm～300 mm左右。厚度亦然，通常為1 mm～20 mm左右。
又，靶材尤其對於形成光資訊記錄媒體之記錄層有用，但用途並無任何限定。
[靶材之製造方法] 其次，對本實施形態之靶材之製造方法進行說明。本實施形態之製造方法包括混合步驟、及燒結步驟。
首先，於混合步驟中，將含有含錳粉末、金屬鉭粉末、含鎢粉末、含銅粉末之混合粉末濕式混合10小時以上。
作為含錳粉末，可視目的適當選擇，可列舉包含Mn之單質或化合物之粉末等。其中，較佳為錳氧化物。作為錳氧化物，例如可使用Mn3 O4 、Mn2 O3 、MnO、MnO2 、MnO3 、Mn2 O7 等。該等可單獨使用1種，亦可併用2種以上。上述錳氧化物中，就燒結溫度與熔點之關係而言，較佳為Mn3 O4 。 作為含錳粉末之平均粒徑，並無特別限定，例如可設為3 μm～15 μm左右。
作為金屬鉭粉末之平均粒徑，並無特別限定，例如可設為1 μm～53 μm左右。
作為含鎢粉末，可視目的適當選擇，例如可列舉包含W之單質之金屬鎢粉末等。 作為含鎢粉末之平均粒徑，並無特別限定，例如可設為1 μm～10 μm左右。
作為含銅粉末，可視目的適當選擇，例如可列舉包含Cu之單質之金屬銅粉末等。 作為含銅粉末之平均粒徑，並無特別限定，例如可設為1 μm～50 μm左右。
上述混合粉末中亦可包含鋅氧化物粉末。作為鋅氧化物粉末，例如可使用ZnO。 作為鋅氧化物粉末之平均粒徑，並無特別限定，例如可設為0.1 μm～3 μm左右。
又，視製造之靶材之期望之目的，亦可使混合粉末包含除上述含錳粉末、金屬鉭粉末、含鎢粉末、含銅粉末、及鋅氧化物粉末以外之其他粉末。作為其他粉末，例如可列舉包含選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素之單質或化合物之粉末。
作為濕式混合之方法，並無特別限制。可視目的適當選擇，例如可列舉使用先前公知之球磨機裝置之濕式混合方法等。
濕式混合時間係設為10小時以上。藉由將混合時間設為10小時以上，可將混合粉末充分地混合。尤其是於使用錳氧化物作為含錳粉末之情形時，促進燒結中之錳氧化物之固相反應，有助於抑制燒結後之氧化錳之結晶相之殘留。混合時間較佳為設為12小時以上，更佳為設為16小時以上，進而較佳為設為20小時以上。若混合24小時，則混合之效果飽和。
其次，於燒結步驟中，於550 kgf/cm2 以上之壓力、750℃～950℃之溫度下對混合粉末進行燒結。再者，1 kgf/cm2 係相當於98.1 kPa。 作為燒結法，並無特別限制，可視目的適當選擇，例如可列舉惰性氣體環境中之熱壓、熱均壓加壓法(HIP法；Hot Isostatic Pressing)等。
關於燒結時所施加之壓力，只要為550 kgf/cm2 以上即可。較佳為600 kgf/cm2 以上，更佳為700 kgf/cm2 以上，進而較佳為800 kgf/cm2 以上。雖然亦受靶材之成分組成等其他燒結條件影響，不過若將燒結時之壓力設為未達550 kgf/cm2 ，則難以使靶材之相對密度成為90%以上。
關於燒結溫度，只要為750℃～950℃即可，亦可為800℃～900℃。
燒結時間並無特別限定，可適當選擇，只要設為通常進行之1小時～6小時左右之燒結時間即可。
經過以上步驟，可製造相對密度為90%以上且含有Mn4 Ta2 O9 之結晶相之Mn-Ta-W-Cu-O系濺鍍靶材。
再者，本實施形態之製造方法除包括上述混合步驟及燒結步驟以外，亦可包括其他步驟。作為其他步驟，例如可列舉為了形成濺鍍靶材之形狀而進行之混合粉末之成形步驟。 [實施例]
其次，對本發明之實施例進行說明，但本發明並不限定於該等實施例。
[濺鍍靶材之製造方法] ＜實施例1＞ 於實施例1中，準備以下之粉末作為原料粉末。 Mn3 O4 粉末(純度：99.9%以上、平均粒徑：10 μm) W粉末(純度：99.9%以上、平均粒徑：5 μm) Ta粉末(純度：99.9%以上、平均粒徑：6 μm) Cu粉末(純度：99.9%以上、平均粒徑：30 μm) 以各含有金屬之比率成為Mn：W：Ta：Cu＝25：30：25：20(原子%)之方式秤量上述原料粉末。將所秤量之各原料粉末以及各原料粉末之合計重量之0.5倍之氧化鋯珠(直徑5 mm)及0.5倍之乙醇放入至容器中，利用球磨機裝置進行20小時濕式混合。使用網眼2 mm之篩自混合後之包含上述原料粉末之漿料溶液分離氧化鋯珠。使漿料溶液加熱乾燥，使用網眼250 μm之篩進行碎解，獲得混合粉末。繼而，對於上述混合粉末，於燒結溫度850℃下施加800 kgf/cm2 之壓力2小時，於氬氣環境中進行熱壓，製作濺鍍靶材。濺鍍靶材之形狀為圓盤狀，尺寸為直徑50 mm。
＜實施例2＞ 於實施例2中，除實施例1所使用之原料粉末外，還使用以下之原料粉末。 ZnO粉末(純度：99.9%以上、平均粒徑：2 μm) 以各含有金屬之比率成為Mn：W：Ta：Cu：Zn＝20：30：25：15：10(原子%)之方式秤量原料粉末，並將燒結溫度設為800℃，除此以外，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例3＞ 於實施例3中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝25：25：25：25(原子%)之方式秤量原料粉末，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例4＞ 於實施例4中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝25：20：25：30(原子%)之方式秤量原料粉末，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例5＞ 於實施例5中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝30：20：20：30(原子%)之方式秤量原料粉末，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例6＞ 於實施例6中，使用與實施例2同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu：Zn＝25：20：20：25：10(原子%)之方式秤量原料粉末，將燒結溫度設為800℃，除此以外，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例7＞ 於實施例7中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝20：30：30：20(原子%)之方式秤量原料粉末，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例8＞ 於實施例8中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為與實施例1相同之方式秤量原料粉末，將燒結溫度設為800℃，除此以外，以與實施例1同樣之方法製作濺鍍靶材。
＜實施例9＞ 於實施例9中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為與實施例1相同之方式秤量原料粉末，將燒結時之壓力設為600 kgf/cm2 ，除此以外，以與實施例1同樣之方法製作濺鍍靶材。
＜比較例1＞ 於比較例1中，代替實施例1所使用之Ta粉末，使用以下之原料粉末。 Ta2 O5 粉末(純度：99.9%以上、平均粒徑：4 μm) 以各含有金屬之比率成為Mn：W：Ta：Cu＝25：30：25：20(原子%)之方式秤量原料粉末，將燒結溫度設為1050℃，將燒結時之壓力設為500 kgf/cm2 ，除此以外，以與實施例1同樣之方法製作濺鍍靶材。
＜比較例2＞ 於比較例2中，除比較例1所使用之原料粉末以外，還使用以下之原料粉末。 ZnO粉末(純度：99.9%以上、平均粒徑：2 μm) 以各含有金屬之比率成為Mn：W：Ta：Cu：Zn＝20：30：25：15：10(原子%)之方式秤量原料粉末，以與比較例1同樣之方法製作濺鍍靶材。
＜比較例3＞ 於比較例3中，使用與比較例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝20：30：35：15(原子%)之方式秤量原料粉末，以與比較例1同樣之方法製作濺鍍靶材。
＜比較例4＞ 於比較例4中，使用與比較例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝20：30：30：20(原子%)之方式秤量原料粉末，以與比較例1同樣之方法製作濺鍍靶材。
＜比較例5＞ 於比較例5中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為Mn：W：Ta：Cu＝20：30：35：15(原子%)之方式秤量原料粉末，以與實施例1同樣之方法製作濺鍍靶材。
＜比較例6＞ 於比較例6中，使用與實施例1同樣之原料粉末，以各含有金屬之比率成為與實施例1相同之方式秤量原料粉末，將燒結時之壓力設為500 kgf/cm2 ，除此以外，以與實施例1同樣之方法製作濺鍍靶材。
[評價] 對於上述實施例1至9及比較例1至6中製作之濺鍍靶材，進行結晶相所包含之Ta系複合氧化物之鑑定、相對密度測定、及異常放電次數之測定。各評價係以如下方式進行。將所得之評價結果表示於表1中。
＜結晶相所包含之Ta系複合氧化物之鑑定＞ 藉由X射線繞射法，進行濺鍍靶材之結晶相所包含之Ta系複合氧化物之鑑定。X射線繞射係使用Rigaku股份有限公司製造之SmartLab，進行θ-2θ掃描，獲得X射線繞射光譜。作為代表例，將實施例1及比較例1之濺鍍靶材之X射線繞射光譜表示於圖1。試驗條件如下所示。 X射線源：Cu-Kα射線 輸出設定：30 kV、15 mA 測角範圍：2θ＝15°～70° 掃描速度：2°(2θ/min)、連續掃描 發散狹縫：1° 散射狹縫：1° 受光狹縫：0.3 mm
＜相對密度＞ 為了計算上述實施例1至9及比較例1至6所製作之濺鍍靶材之相對密度，進行濺鍍靶材之尺寸測定及重量測定，算出實測密度。其次，使用以下之計算式算出相對密度。 相對密度(%)＝(燒結體之實測密度/燒結體之假想密度)×100
＜異常放電次數之測定＞ 藉由In焊料將上述實施例1至9及比較例1至6所製作之濺鍍靶材接著於無氧銅製造之背襯板。將該等濺鍍靶材安裝於濺鍍裝置，進行真空排氣至1×10-4 Pa以下後，導入Ar氣體與O2 氣體，將裝置內壓力設為0.3 Pa。氧氣之比率(O2 /Ar＋O2 )設為70%。以DC電源施加5 W/cm2 之電力，進行30分鐘濺鍍，藉由電弧計數器測定濺鍍中之異常放電之次數。
[表1]
   金屬元素比(原子%) Ta原材料 燒結條件 Ta系複合 氧化物 相對密度 (%) 異常放電 次數
Mn W Ta Cu Zn Ta＋W 溫度 (℃) 壓力 (kgf/cm2 )
實施例1 25 30 25 20 0 55 Ta 850 800 Mn4 Ta2 O9 95 0
實施例2 20 30 25 15 10 55 Ta 800 800 Mn4 Ta2 O9 93 0
實施例3 25 25 25 25 0 50 Ta 850 800 Mn4 Ta2 O9 98 0
實施例4 25 20 25 30 0 45 Ta 850 800 Mn4 Ta2 O9 98 0
實施例5 30 20 20 30 0 40 Ta 850 800 Mn4 Ta2 O9 99 0
實施例6 25 20 20 25 10 40 Ta 800 800 Mn4 Ta2 O9 99 0
實施例7 20 30 30 20 0 60 Ta 850 800 Mn4 Ta2 O9 91 0
實施例8 25 30 25 20 0 55 Ta 800 800 Mn4 Ta2 O9 90 0
實施例9 25 30 25 20 0 55 Ta 850 600 Mn4 Ta2 O9 91 0
比較例1 25 30 25 20 0 55 Ta2 O5 1050 500 MnTa2 O6 97 40
比較例2 20 30 25 15 10 55 Ta2 O5 1050 500 MnTa2 O6 97 50
比較例3 20 30 35 15 0 65 Ta2 O5 1050 500 MnTa2 O6 95 70
比較例4 20 30 30 20 0 60 Ta2 O5 1050 500 MnTa2 O6 96 40
比較例5 20 30 35 15 0 65 Ta 850 800 Mn4 Ta2 O9 88 10
比較例6 25 30 25 20 0 55 Ta 850 500 Mn4 Ta2 O9 88 10
根據以上之結果，確認含有Mn4 Ta2 O9 之結晶相、且相對密度為90%以上之Mn-Ta-W-Cu-O系濺鍍靶材抑制了異常放電次數。 又，對使用相同原料粉末於相同燒結條件下製作之實施例1、5、7及比較例5進行比較，確認存在Ta及W之含有比越高，則相對密度越下降之傾向。 進而，對除燒結時之壓力以外全部於相同條件下製作之實施例1、9及比較例6進行比較，確認存在燒結時之壓力越高，則相對密度越高之傾向。
圖1係表示實施例1及比較例1之濺鍍靶材之X射線繞射光譜之圖。

Claims (9)

  1. 一種濺鍍靶材，其係於成分組成中包含Mn、Ta、W、Cu、及O之Mn-Ta-W-Cu-O系濺鍍靶材，且其相對密度為90%以上，且含有Mn4Ta2O9之結晶相。
  2. 如請求項1之濺鍍靶材，其中相對於除O以外之構成元素之合計100原子%，Ta與W之合計比率未達65原子%。
  3. 如請求項1或2之濺鍍靶材，其中上述成分組成中進而包含Zn。
  4. 如請求項1或2之濺鍍靶材，其中上述成分組成中進而包含選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素。
  5. 如請求項4之濺鍍靶材，其中上述選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素之合計含有率，相對於除O以外之構成元素之合計100原子%為8原子%~70原子%。
  6. 一種如請求項1至5中任一項之Mn-Ta-W-Cu-O系濺鍍靶材之製造方法，其包括：混合步驟，其係將含有含錳粉末、金屬鉭粉末、含鎢粉末、含銅粉 末之混合粉末濕式混合10小時以上；及燒結步驟，其係於上述混合步驟之後，對上述混合粉末施加550kgf/cm2以上之壓力，並於750℃~950℃之溫度下進行燒結。
  7. 如請求項6之製造方法，其中上述含錳粉末為錳氧化物粉末，上述含鎢粉末為金屬鎢粉末，上述含銅粉末為金屬銅粉末。
  8. 如請求項6或7之製造方法，其中上述混合粉末進而包含鋅氧化物粉末。
  9. 如請求項6或7之製造方法，其中上述混合粉末進而含有包含選自由Mg、Ag、Ru、Ni、Zr、Mo、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Cr、及Tb所組成之群中之至少一種元素之單質或化合物的粉末。
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