TWI811569B - 定位裝置、曝光裝置及物品之製造方法 - Google Patents
定位裝置、曝光裝置及物品之製造方法 Download PDFInfo
- Publication number
- TWI811569B TWI811569B TW109134697A TW109134697A TWI811569B TW I811569 B TWI811569 B TW I811569B TW 109134697 A TW109134697 A TW 109134697A TW 109134697 A TW109134697 A TW 109134697A TW I811569 B TWI811569 B TW I811569B
- Authority
- TW
- Taiwan
- Prior art keywords
- positioning device
- plate
- wall portion
- mounting table
- original plate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005259 measurement Methods 0.000 claims abstract description 85
- 230000003287 optical effect Effects 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims description 34
- 230000033001 locomotion Effects 0.000 claims description 33
- 238000007664 blowing Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 77
- 238000010586 diagram Methods 0.000 description 14
- 238000010926 purge Methods 0.000 description 10
- 238000005286 illumination Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-192133 | 2019-10-21 | ||
JP2019192133A JP7469864B2 (ja) | 2019-10-21 | 2019-10-21 | 位置決め装置、露光装置、および物品の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202117465A TW202117465A (zh) | 2021-05-01 |
TWI811569B true TWI811569B (zh) | 2023-08-11 |
Family
ID=75637210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109134697A TWI811569B (zh) | 2019-10-21 | 2020-10-07 | 定位裝置、曝光裝置及物品之製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7469864B2 (ko) |
KR (1) | KR20210047259A (ko) |
CN (1) | CN112764319A (ko) |
TW (1) | TWI811569B (ko) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1137895A (ja) * | 1997-07-17 | 1999-02-12 | Nikon Corp | 反射率測定センサの検査方法 |
TW201632839A (zh) * | 2014-11-28 | 2016-09-16 | Asml荷蘭公司 | 編碼器、位置量測系統及微影裝置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3089802B2 (ja) * | 1992-04-01 | 2000-09-18 | 株式会社ニコン | ステージの位置計測装置、投影露光装置及び投影露光方法 |
JP2001160531A (ja) * | 1999-12-01 | 2001-06-12 | Canon Inc | ステージ装置 |
JP2004241478A (ja) * | 2003-02-04 | 2004-08-26 | Nikon Corp | 露光方法及びその装置、並びにデバイス製造方法 |
JP4125315B2 (ja) * | 2005-10-11 | 2008-07-30 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP2009141190A (ja) * | 2007-12-07 | 2009-06-25 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
JP2010161116A (ja) * | 2009-01-06 | 2010-07-22 | Canon Inc | 位置決め装置、それを用いた露光装置及びデバイスの製造方法 |
JP5002613B2 (ja) * | 2009-03-31 | 2012-08-15 | 株式会社東芝 | Xyステージ装置 |
JP5679850B2 (ja) * | 2011-02-07 | 2015-03-04 | キヤノン株式会社 | インプリント装置、および、物品の製造方法 |
JP5744593B2 (ja) * | 2011-03-29 | 2015-07-08 | キヤノン株式会社 | 計測装置、リソグラフィ装置及びデバイスの製造方法 |
JP2017111243A (ja) * | 2015-12-15 | 2017-06-22 | キヤノン株式会社 | ステージ装置、リソグラフィ装置、及び物品の製造方法 |
JP6916616B2 (ja) * | 2016-12-13 | 2021-08-11 | キヤノン株式会社 | リソグラフィ装置、物品の製造方法、および計測装置 |
-
2019
- 2019-10-21 JP JP2019192133A patent/JP7469864B2/ja active Active
-
2020
- 2020-10-07 TW TW109134697A patent/TWI811569B/zh active
- 2020-10-19 KR KR1020200134888A patent/KR20210047259A/ko not_active Application Discontinuation
- 2020-10-21 CN CN202011134936.5A patent/CN112764319A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1137895A (ja) * | 1997-07-17 | 1999-02-12 | Nikon Corp | 反射率測定センサの検査方法 |
TW201632839A (zh) * | 2014-11-28 | 2016-09-16 | Asml荷蘭公司 | 編碼器、位置量測系統及微影裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN112764319A (zh) | 2021-05-07 |
KR20210047259A (ko) | 2021-04-29 |
TW202117465A (zh) | 2021-05-01 |
JP7469864B2 (ja) | 2024-04-17 |
JP2021067775A (ja) | 2021-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8964166B2 (en) | Stage device, exposure apparatus and method of producing device | |
JP5800257B2 (ja) | 露光装置及び露光方法、並びにデバイス製造方法 | |
US8184261B2 (en) | Exposure apparatus | |
JP2020112695A (ja) | 露光装置、露光方法および、物品製造方法 | |
JP3637639B2 (ja) | 露光装置 | |
TWI811569B (zh) | 定位裝置、曝光裝置及物品之製造方法 | |
US7515277B2 (en) | Stage apparatus, control system, exposure apparatus, and device manufacturing method | |
JP7299755B2 (ja) | 露光装置、および物品の製造方法 | |
JP2013083655A (ja) | 露光装置、及びデバイス製造方法 | |
JPWO2008136404A1 (ja) | 光学部材、干渉計システム、ステージ装置、露光装置、及びデバイス製造方法 | |
JP7385421B2 (ja) | 露光装置、および物品製造方法 | |
JP5414288B2 (ja) | 露光方法及び装置、並びにデバイス製造方法 | |
US10725388B2 (en) | Exposure apparatus and method of manufacturing article | |
JP2004273666A (ja) | 露光装置 | |
TWI837434B (zh) | 照明光學系統、曝光裝置、及物品製造方法 | |
JP5612810B2 (ja) | 露光装置及び露光方法、並びにデバイス製造方法 | |
WO2010082475A1 (ja) | ステージ装置、露光装置、露光方法、及びデバイス製造方法 | |
JP2024123693A (ja) | 露光装置及び物品の製造方法 | |
JP2009238922A (ja) | 露光装置、露光方法及びデバイスの製造方法 | |
JP2010123615A (ja) | 露光装置、露光方法、及びデバイス製造方法 | |
JPH09243324A (ja) | レーザ干渉計方式のxy位置決め装置 | |
KR20080052374A (ko) | 위치결정장치, 노광장치 및 디바이스의 제조방법 | |
JP2007081314A (ja) | ステージ装置の制御方法、露光装置及びデバイスの製造方法 | |
JP2011033976A (ja) | パターン形成方法、及びデバイス製造方法 | |
JP2017015995A (ja) | 露光装置及び物品の製造方法 |