TWI811569B - Positioning device, exposure device and manufacturing method of article - Google Patents
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- TWI811569B TWI811569B TW109134697A TW109134697A TWI811569B TW I811569 B TWI811569 B TW I811569B TW 109134697 A TW109134697 A TW 109134697A TW 109134697 A TW109134697 A TW 109134697A TW I811569 B TWI811569 B TW I811569B
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005259 measurement Methods 0.000 claims abstract description 85
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本發明提供有利於高精度地測量載置台的位置的技術。進行板的定位的定位裝置包括:載置台,能夠保持前述板並在第1方向上移動;以及測量部,在前述第1方向上射出光,並基於由設置於前述載置台的上表面之上的反射構件反射的光,測量前述載置台在前述第1方向上的位置,前述載置台在前述第1方向上的前述板與前述反射構件之間具有壁部,該壁部用於減少因前述載置台向前述第1方向的移動而前述板的周圍的氣體侵入到前述測量部的光路的情形,前述壁部構成為其上端比前述板的上表面高,且與前述板以及前述反射構件分離地配置。The present invention provides technology that is useful for measuring the position of a mounting table with high accuracy. The positioning device for positioning the plate includes: a mounting base capable of holding the plate and moving in the first direction; and a measuring unit that emits light in the first direction and is provided on the upper surface of the mounting base based on the The light reflected by the reflective member is used to measure the position of the mounting platform in the first direction. The mounting platform has a wall portion between the plate and the reflective member in the first direction, and the wall portion is used to reduce the When the mounting table moves in the first direction and the gas around the plate invades the optical path of the measurement unit, the wall portion is configured such that its upper end is higher than the upper surface of the plate and is separated from the plate and the reflecting member. configured locally.
Description
本發明涉及對板進行定位的定位裝置、包括該定位裝置的曝光裝置以及物品的製造方法。 The present invention relates to a positioning device for positioning a board, an exposure device including the positioning device, and a manufacturing method of an article.
作為在液晶面板或半導體器件的製造工序(光刻工序)中使用的裝置之一,已知一邊使原版與基板相對地掃描一邊對基板進行曝光的曝光裝置。在這樣的曝光裝置中,為了在基板上高精度地形成圖案,要求提高保持原版、基板的載置台的定位精度,為此需要高精度地測量載置台的位置。 As one of the devices used in the manufacturing process (photolithography process) of a liquid crystal panel or a semiconductor device, an exposure device that exposes a substrate while scanning a master plate and the substrate relative to each other is known. In such an exposure apparatus, in order to form a pattern on a substrate with high accuracy, it is required to improve the positioning accuracy of the mounting table that holds the master plate and the substrate. Therefore, it is necessary to measure the position of the mounting table with high accuracy.
在載置台的位置的測量中,一般能夠使用雷射干涉儀,但在雷射干涉儀中,由於測量光路上的氣體的溫度、壓力、濕度等的波動而引起的測量光路上的折射率的變化可能成為測量精度的降低(測量誤差)的主要原因。例如,在原版中,由於在基板的曝光中被照明而溫度上升,因此若在原版上產生的熱隨著原版載置台的移動而向周圍擴展並侵入到測量光路,則原版載置台的位置的測量精度可能降低。另外,為了防止原版的模糊,有時用比其周圍低濕度的氣體(吹掃氣體)充滿原版的配置空間。即使在這種情 況下,若低濕度的氣體隨著原版載置台的移動而侵入到測量光路,則原版載置台的位置的測量精度也可能降低。 Generally, a laser interferometer can be used to measure the position of the mounting table. However, in a laser interferometer, the refractive index on the measurement optical path is affected by fluctuations in temperature, pressure, humidity, etc. of the gas on the measurement optical path. Changes may be a major cause of reduction in measurement accuracy (measurement error). For example, in the master plate, the temperature rises due to illumination during exposure of the substrate. Therefore, if the heat generated on the master plate spreads to the surroundings as the master plate mounting table moves and invades the measurement optical path, the position of the master plate mounting table will change. Measurement accuracy may be reduced. In addition, in order to prevent the original plate from blurring, the arrangement space of the original plate may be filled with gas (purge gas) having a lower humidity than its surroundings. Even in this situation In this case, if low-humidity gas intrudes into the measurement optical path as the original plate mounting platform moves, the measurement accuracy of the position of the original plate mounting platform may also be reduced.
在專利文獻1中公開了一種具備干涉儀的測量裝置,該干涉儀朝向設置於載置台的側面的反射鏡射出光,接受由反射鏡反射的光與參照光的干涉光而檢測載置台的位置。在專利文獻1所公開的測量裝置中,用於將從氣體吹出部朝向載置台吹出的氣體向干涉儀的光路整流而高效地引導的構造體(整流板)被設置成,從上下夾置該光路的一部分以及反射鏡。 Patent Document 1 discloses a measurement device including an interferometer that emits light toward a reflecting mirror installed on the side of a mounting table, receives interference light between the light reflected by the reflecting mirror and a reference light, and detects the position of the mounting table. . In the measurement device disclosed in Patent Document 1, a structure (straightening plate) for rectifying and efficiently guiding the gas blown out from the gas blowing part toward the mounting table to the optical path of the interferometer is provided so as to sandwich the gas from above and below. part of the optical path and the reflector.
專利文獻1:日本特開2012-209401號公報 Patent Document 1: Japanese Patent Application Publication No. 2012-209401
如專利文獻1所公開的那樣,在反射鏡和結構體設置於載置台的側面的結構中,隨著載置台的移動,載置臺上(例如原版上)的氣體有時會流入載置台的側面。在該情況下,在載置台的側面的附近的測量光路上,由從氣體吹出部吹出並被構造體引導的氣體和從載置臺上流動來的氣體產生紊流(氣體的波動),載置台的位置的測量精度可能降低。 As disclosed in Patent Document 1, in a structure in which the reflecting mirror and the structure are provided on the side of the mounting table, as the mounting table moves, the gas on the mounting table (for example, on the original plate) may flow into the mounting table. side. In this case, turbulence (fluctuation of gas) is generated on the measurement optical path near the side surface of the mounting table by the gas blown out from the gas blowing part and guided by the structure and the gas flowing from the mounting table, carrying the The measurement accuracy of the position where the stage is set may be reduced.
因此,本發明的目的在於提供一種有利於用於高精度地測量載置台的位置的技術。 Therefore, an object of the present invention is to provide a technique that is advantageous for measuring the position of a mounting table with high accuracy.
為了實現上述目的,作為本發明的一技術方案的定位裝置,是對板進行定位的定位裝置,其特徵在於,該定位裝置包括:載置台,能夠保持前述板並在第1方向上移動;以及測量部,在前述第1方向上射出光,並基於由設置於前述載置台的上表面之上的反射構件反射的光,測量前述載置台在前述第1方向上的位置,前述載置台在前述第1方向上的前述板與前述反射構件之間具有壁部,該壁部用於減少因前述載置台向前述第1方向的移動而前述板的周圍的氣體侵入到前述測量部的光路的情形,前述壁部構成為其上端比前述板的上表面高,且與前述板以及前述反射構件分離地配置。 In order to achieve the above object, a positioning device as one technical solution of the present invention is a positioning device for positioning a board, and is characterized in that the positioning device includes: a mounting table capable of holding the aforementioned board and moving in the first direction; and The measuring unit emits light in the first direction and measures the position of the mounting table in the first direction based on the light reflected by the reflecting member provided on the upper surface of the mounting table. There is a wall portion between the plate and the reflecting member in the first direction, and the wall portion is used to reduce the intrusion of gas around the plate into the optical path of the measurement unit due to the movement of the mounting table in the first direction. The wall portion is configured such that its upper end is higher than the upper surface of the plate and is disposed apart from the plate and the reflecting member.
本發明的進一步的目的或其它的技術方案能夠通過以下參照附圖說明的優選的實施方式來明確。 Further objects and other technical solutions of the present invention will be clarified by the preferred embodiments described below with reference to the accompanying drawings.
根據本發明,例如能夠提供一種有利於用於高精度地測量載置台的位置的技術。 According to the present invention, for example, it is possible to provide a technique that is advantageous for measuring the position of a mounting table with high accuracy.
10:定位裝置 10: Positioning device
10A:定位裝置 10A: Positioning device
10B:定位裝置 10B: Positioning device
10C:定位裝置 10C: Positioning device
10D:定位裝置 10D: Positioning device
10E:定位裝置 10E: Positioning device
11:原版載置台 11:Original mounting platform
11a:粗動載置台 11a: Coarse motion stage
11b:微動載置台 11b: Micro-movement stage
12:測量部 12:Measurement Department
12a:測量光路 12a:Measurement light path
13:反射構件 13: Reflective component
14:吹出部 14: Blowing part
14a:氣體 14a:Gas
16:支承部 16:Support part
17:壁部 17: Wall
18:罩構件 18: Cover member
18a:開口部 18a: opening
19:間隙 19: Gap
21:基板載置台 21:Substrate mounting table
31:第1面構件 31:Side 1 component
32:第2面構件 32: Side 2 component
33:吹掃氣體 33: Purge gas
34:間隙規定構件 34: Clearance regulation components
41:基座 41:Pedestal
42:驅動機構 42:Driving mechanism
43:第2測量部 43: 2nd Surveying Department
43a:測量光路 43a: Measuring light path
44:反射構件 44: Reflective components
45:驅動機構 45:Driving mechanism
46:支承構件 46:Supporting components
100:曝光裝置 100:Exposure device
S:上表面 S: upper surface
M:原版 M:Original
W:基板 W: substrate
IO:照明光學系統 IO: Illumination optical system
LS:光源 LS: light source
PO:投影光學系統 PO: Projection optical system
CNT:控制部 CNT:Control Department
[圖1]是表示曝光裝置的結構的概略圖。 [Fig. 1] is a schematic diagram showing the structure of the exposure device.
[圖2]是表示第1實施方式的定位裝置的結構的概略圖。 [Fig. 2] is a schematic diagram showing the structure of the positioning device according to the first embodiment.
[圖3]是用於說明第1實施方式的定位裝置的效果的圖。 [Fig. 3] is a diagram for explaining the effect of the positioning device according to the first embodiment.
[圖4]是表示壁部的變形例的圖。 [Fig. 4] is a diagram showing a modification of the wall portion.
[圖5]是表示第2實施方式的定位裝置的結構的概略圖。 [Fig. 5] is a schematic diagram showing the structure of the positioning device according to the second embodiment.
[圖6]是表示第3實施方式的定位裝置的結構的概略圖。 [Fig. 6] is a schematic diagram showing the structure of a positioning device according to a third embodiment.
[圖7]是表示第4實施方式的定位裝置的結構的概略圖。 [Fig. 7] is a schematic diagram showing the structure of the positioning device according to the fourth embodiment.
[圖8]是表示第4實施方式的定位裝置的變形例的概略圖。 [Fig. 8] is a schematic diagram showing a modified example of the positioning device according to the fourth embodiment.
以下,參照附圖詳細說明實施方式。此外,以下的實施方式並不限定權利要求書所涉及的發明。在實施方式中記載有多個特徵,但這些多個特徵未必都是發明所必須的特徵,另外,多個特徵也可以任意地組合。並且,在附圖中,對相同或同樣的結構標注相同的附圖標記,並省略重複的說明。 Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, these features are not necessarily essential to the invention, and the features may be arbitrarily combined. In addition, in the drawings, the same or similar structures are denoted by the same reference numerals, and repeated descriptions are omitted.
[曝光裝置的結構] [Structure of exposure device]
對本發明的第1實施方式進行說明。圖1是表示本實施方式的曝光裝置100的整體結構的概略圖。本實施方式的曝光裝置100是通過一邊掃描原版M和基板W一邊對基板W進行曝光,從而將原版M的圖案轉印到基板上的步進掃描方式的曝光裝置。這樣的曝光裝置100也被稱為掃描曝光裝置或掃描器。在本實施方式中,原版M例如是石英制的掩模(標線片),形成有要向基板W中的多個投射區域的每一個轉印的電路圖案。另外,基板W是塗敷有光抗蝕劑的晶圓,能夠使用例如單晶矽基板等。
The first embodiment of the present invention will be described. FIG. 1 is a schematic diagram showing the overall structure of the
曝光裝置100能夠包括照明光學系統IO、能夠保持原版M並移動的原版載置台11、投影光學系統PO、能夠保持基板W並移動的基板載置台21、以及控制部CNT。控制部CNT例如由具有CPU、記憶體的計算機構成,並且與裝置內的各部電連接,統一控制裝置整體的動作。在此,在以下的說明中,將與從照明光學系統IO射出並向原版M入射的光的光軸平行的軸向設為Z軸方向,將在與該光軸垂直的面內相互正交的2個軸向設為X軸方向以及Y軸方向。
The
照明光學系統IO將從水銀燈、ArF準分子雷射、KrF準分子雷射等光源LS射出的光整形為例如帶狀或圓弧狀的狹縫光,利用該狹縫光對原版M的一部分進行照明。透過了原版M的一部分的光作為反映了該原版M的一部分的圖案的圖案光入射到投影光學系統PO。投影光學系統PO具有規定的投影倍率,通過圖案光將原版M的圖案投影到基板上(具體而言,基板上的抗蝕劑)。原版M和基板W分別
由原版載置台11和基板載置台21保持,且分別配置在經由投影光學系統PO光學共軛的位置(投影光學系統PO的物體面和像面)上。控制部CNT一邊使原版載置台11以及基板載置台21相互同步一邊以與投影光學系統PO的投影倍率對應的速度比進行相對掃描(在本實施方式中,將原版M以及基板W的掃描方向設為Y軸方向(第1方向))。由此,能夠將原版M的圖案轉印到基板上。
The illumination
[定位裝置的結構] [Structure of positioning device]
接著,對進行板的定位的定位裝置進行說明。在本實施方式中,對作為板進行原版M的定位的定位裝置10進行說明,但在作為板進行基板W的定位的情況下也能夠應用同樣的結構的定位裝置。
Next, a positioning device for positioning the board will be described. In this embodiment, the
圖2是表示本實施方式的定位裝置10A的結構的概略圖。圖2(a)表示定位裝置10A的側視圖,圖2(b)表示定位裝置10A的俯視圖。定位裝置10A例如能夠包括:原版載置台11,能夠保持原版M並至少在Y軸方向(第1方向)上移動;以及測量部12,對Y軸方向上的原版載置台11的位置進行測量。
FIG. 2 is a schematic diagram showing the structure of the
測量部12例如由雷射干涉儀構成,向設置於原版載置台11的反射構件13(反射鏡)射出光,基於來自該反射構件13的反射光與參照光的干涉,能夠測量Y軸方向上的原版載置台11的位置。在圖2所示的例子中,多個(2個)測量部12在X軸方向上分離地配置。這樣,通過使用多個測量部
12,也能夠測量在θ方向(繞Z軸的旋轉方向)上的原版載置台11的旋轉。另外,反射構件13能夠設置在原版載置台11的上表面S上。在本實施方式的情況下,如圖2所示,反射構件13由從原版載置台11的上表面S向+Z方向突出的支承部16支承。在此,所謂原版載置台11的上表面S,例如是原版載置台11中的包括保持原版M的保持面的面。
The
在定位裝置10A中,若在從測量部12射出的光的光路(測量光路)12a中產生氣體的溫度、濕度等的波動(氛圍波動),則因此測量光路12a的折射率變化,有時產生測量精度的降低(測量誤差)。因此,在本實施方式的定位裝置10A中,能夠設置吹出用於使測量光路12a的氛圍穩定化的氣體14a的吹出部14。吹出部14例如能夠以在測量部12的測量光路12a中形成沿著Y軸方向的氣體的流動的方式朝向原版載置台11吹出氣體。從吹出部14吹出的氣體14a除了使測量光路12a的氛圍穩定化之外,有時還用於防止原版M的模糊或冷卻原版載置台11。作為從吹出部14吹出的氣體14a,例如可以使用清潔空氣、清潔乾燥空氣、氮氣等溫度、濕度被保持(調整)為規定範圍內的清潔的氣體。
In the
另外,由於原版M在基板W的曝光中被照明而溫度上升,因此當在原版M上產生的熱隨著原版載置台11的移動而向周圍擴散並侵入到測量光路12a時,測量部12對原版載置台11的位置的測量精度可能降低。另外,為了防止原版M的模糊,有時用比其周圍低濕度的氣體(吹掃氣體)充滿原版M的配置空間。即使在這種情況下,若低濕度的氣
體隨著原版載置台11的移動而侵入到測量光路,則測量部12對原版載置台11的位置的測量精度也可能降低。另外,以下有時將來自原版M的帶有熱量的氣體和供給到原版M的配置空間的氣體(吹掃氣體)統稱為“原版M的周圍氣體”。
In addition, since the original plate M is illuminated and the temperature rises during the exposure of the substrate W, when the heat generated on the original plate M spreads to the surroundings as the original plate mounting table 11 moves and invades the measurement
因此,在本實施方式的定位裝置10A中,在原版載置台11的上表面S的反射構件13(支承部16)與原版M之間設置有壁部17。通過這樣設置壁部17,能夠減少伴隨著原版載置台11的移動而原版M的周圍氣體移動並侵入到測量光路12a的情形。具體而言,如圖3所示,當原版載置台11按照箭頭標記V移動時,原版M的周圍氣體開始向朝向測量光路12a的方向(-X方向)移動。可是,開始移動的原版M的周圍氣體如箭頭標記A所示碰撞到壁部17,其移動方向(流動的朝向)被改變為遠離測量光路12a的方向。因此,能夠減少(防止)原版M的周圍氣體侵入到測量光路12a的情形。
Therefore, in the
壁部17構成為其高度(Z軸方向)高於原版M的上表面。壁部17的高度越高,越能夠將原版M的周圍氣體的移動方向引導(變換)為遠離測量光路12a的方向,使該周圍氣體的流動與測量光路12a之間的距離增加。這樣,若使原版M的周圍氣體的流動與測量光路12a之間的距離增加,則能夠減少原版M的周圍氣體侵入到測量光路12a的情形。並且,在該情況下,能夠利用從吹出部14吹出的氣體14a使原版M的周圍氣體的流動從測量光路12a進一步分離,因此能夠進一步減少原版M的周圍氣體侵入到測量光路12a
的情形。
The
另外,壁部17的寬度(X軸方向的長度)可以為原版M的寬度(X軸方向的長度)以上。壁部17的寬度越寬,越能夠將移動的原版M的周圍氣體向遠離測量光路12a的方向引導而使該周圍氣體的流動與測量光路12a之間的距離增加。另外,X軸方向能夠定義為在與原版載置台11的上表面S平行的面內垂直於掃描方向(X軸方向、第1方向)的方向(第2方向)。在此,如上所述,壁部17的高度越高越好,壁部17的寬度越寬越好,但壁部17的高度和寬度例如能夠根據原版載置台11的尺寸或原版載置台11能夠移動的空間的尺寸來決定。
In addition, the width of the wall portion 17 (the length in the X-axis direction) may be equal to or larger than the width of the original plate M (the length in the X-axis direction). The wider the width of the
從Z軸方向觀察(俯視時),壁部17不限於矩形形狀,也可以具有能夠增加改變原版M的周圍氣體的移動方向的效果的其它的形狀。圖4(a)~(d)表示壁部17的形狀例。圖4(a)所示的壁部17具有X軸方向側的端部向遠離原版M的方向(+Y方向)折彎成“L”字狀的形狀。圖4(b)所示的壁部17具有X軸方向側的端部向朝向原版M的方向(-Y方向)折彎成“L”字狀的形狀。图4(c)所示的壁部17具有X轴方向侧的端部向遠離原版M的方向(+Y方向)折彎成“ㄑ”字状的形状。圖4(d)所示的壁部17具有X軸方向側的側面傾斜的形狀(即,俯視時的形狀具有梯形形狀)。另外,壁部17的形狀並不限定於具有曲率或厚度局部不同等圖4所示的形狀。另外,在利用壁部17處的空氣阻力而對原版載置台11的移動造成影響的情況下,也可以將壁部17設為傾斜形
狀,以使得該空氣阻力比期望值小。
When viewed from the Z-axis direction (in plan view), the
另一方面,從吹出部14吹出的氣體14a的流動也能夠通過壁部17而變化。如上所述,為了使測量光路12a的氛圍穩定化而減少測量精度的降低,氣體14a被供給到測量光路12a。因此,若在測量光路12a中氣體14a的流動局部地變化,則在該部分,折射率變化,測量精度可能降低。例如,當從吹出部14吹出的氣體14a碰撞到壁部17時,在壁部17的附近,氣體14a的流動可能發生變化。另外,壁部17附近的氣體14a隨著原版載置台11的移動而被壁部17推出或拉拽,因此有時成為紊亂的流動(紊流)。若在測量光路12a中產生這樣的氣體14a的流動的變化、紊流,則可能引起測量精度的降低。
On the other hand, the flow of the
因此,本實施方式的壁部17在Y軸方向上與反射構件13(支承部16)分離地配置。例如,壁部17可以在Y軸方向上配置於比原版M與反射構件13(支承部16)的中間位置靠原版側(板側)的位置。這樣,通過將壁部17與反射構件13(支承部16)分離配置,能夠降低壁部17的附近的氣體14a的流動的變化、紊流對測量測光路12a造成的影響,能夠減少測量精度的降低。並且,通過壁部17而使氣體14a的流動發生變化的方向成為遠離測量光路12a的方向,因此通過這樣的變化後的氣體14a的流動,能夠增加使越過壁部17而來的原版M的周圍氣體遠離測量光路12a的效果。
Therefore, the
接著,對通過模擬來確認在原版M與反射構件13(支承部16)之間設置壁部17的效果的結果進行說明。在模擬
中,將原版M的尺寸設為152mm×152mm。另外,將壁部17設為180mm寬度(X軸方向的長度)以及26mm高度,設置於距原版載置台11的上表面S的原版M的端部35mm的位置。在該情況下,在基板W的曝光中原版M的溫度上升1.4℃時,與未設置壁部17的情況相比,成為由原版M的溫度引起的測量光路12a的波動改善了45%的結果。
Next, the result of confirming the effect of providing the
如上所述,在本實施方式的定位裝置10A中,在原版載置台11的上表面的原版M與反射構件13之間設置有壁部17。另外,壁部17構成為其上端比原版M的上表面高,與原版M和反射構件13(支承部16)分離地配置。根據該結構,能夠減少在曝光中在原版M產生的熱、對原版M供給的吹掃氣體等原版M的周圍氣體侵入到測量部12的測量光路12a的情形。因此,能夠降低由測量光路12a的氛圍波動引起的測量部12的測量誤差,高精度地對原版M進行定位。在此,在本實施方式的結構中,也可以調換測量部12和反射構件13的位置。即,在本實施方式中,在原版載置台11的上表面S設置了反射構件13,但也可以在原版載置台11的上表面S設置測量部12。
As described above, in the
對本發明的第2實施方式進行說明。本實施方式是基本上延續了第1實施方式的實施方式,但在還具有包圍測量部12的測量光路12a的一部分的罩構件18這一點上與第1實施方式不同。以下,對具有罩構件18的本實施方式的定
位裝置10B進行說明。
A second embodiment of the present invention will be described. This embodiment is basically a continuation of the first embodiment, but is different from the first embodiment in that it further includes a
圖5是表示本實施方式的定位裝置10B的結構的概略圖。圖5(a)表示定位裝置10B的側視圖,圖5(b)表示定位裝置10B的俯視圖。本實施方式的原版載置台11在其上表面S具有包圍(覆蓋)測量光路12a的一部分的罩構件18。為了進一步降低越過壁部17而來的原版M的周圍氣體對測量光路12a造成的影響,即,為了調整在原版載置台11上的氣體的流動而實現測量光路12a的氛圍的穩定化而能夠設置罩構件18。
FIG. 5 is a schematic diagram showing the structure of the
本實施方式的罩構件18能夠以在罩構件18與壁部17之間形成間隙19的方式配置於原版載置台11的上表面S。通過這樣從壁部17隔開間隙19地配置罩構件18,能夠使從吹出部14吹出並通過了罩構件18的氣體14a從該間隙19排出,並沿著壁部17流動。即,能夠進一步增加使越過壁部17移動來的原版M的周圍氣體遠離測量光路12a的效果。
The
罩構件18與壁部17之間的間隙19越窄,越能夠增加從該間隙19排出的氣體14a的流速,增加使原版M的周圍氣體遠離測量光路12a的效果。另一方面,若使間隙19變窄,則從吹出部14吹出的氣體14a在罩構件18的內部停滯,有時引起測量光路12a的氛圍波動。因此,本實施方式的罩構件18在X軸方向側的側面具有用於排出通過內部的氣體的開口部18a。開口部18a可以形成在壁部17側,優選可以形成在Y軸方向上的反射構件13與壁部17之間。另外,優選開口部18a在Y軸方向上配置在盡可能遠離反射構
件13的位置。這是為了即使原版M的周圍氣體越過壁部17而從開口部18a侵入到罩構件18的內部,也減少對測量光路12a造成影響的情況。
The narrower the
在此,罩構件18也可以與壁部17一體地構成。在該情況下,也能夠相對於該一體構成的構件形成與間隙19以及開口部18a對應的開口、切口等。另外,開口部18a也可以與罩構件18和壁部17之間的間隙19的狹窄無關地形成。並且,如圖5所示,本實施方式的罩構件18構成為包圍在X軸方向上分離配置的多個反射構件13(測量光路12a),但不限於此,也可以構成為分別包圍多個反射構件13的每一個。
Here, the
如上所述,本實施方式的定位裝置10B具有相對於壁部17隔開間隙19地設置於原版載置台11的上表面S的罩構件18。另外,罩構件18也可以具有形成於X軸方向側的側面的開口部18a。根據該結構,能夠使從吹出部14吹出並通過了罩構件18的氣體14a從該間隙19排出,並沿著壁部17流動,因此能夠進一步減少原版M的周圍氣體侵入到測量部12的測量光路12a的情形。
As described above, the
對本發明的第3實施方式進行說明。在本實施方式中,對構成為向配置有原版M的空間(以下稱為原版M的配置空間)供給吹掃氣體的定位裝置10C的結構例進行說明。另外,本實施方式只要沒有特別提及,則基本上延續第1~第2實施方式。
A third embodiment of the present invention will be described. In this embodiment, a structural example of the
圖6是表示本實施方式的定位裝置10C的結構的概略圖。圖6(a)表示定位裝置10C的側視圖,圖6(b)表示定位裝置10C的俯視圖。本實施方式的定位裝置10C例如在向原版M的配置空間供給吹掃氣體(作為一例為低濕度的氣體)的情況下是有用的。
FIG. 6 is a schematic diagram showing the structure of the
本實施方式的定位裝置10C構成為使原版載置台11在第1面構件31與第2面構件32之間移動。第1面構件31例如是被照明光學系統IO支承並在XY方向上擴展的構件,第2面構件32例如是被投影光學系統PO支承並在XY方向上擴展的構件。第1面構件31和第2面構件32以相對於原版載置台11的間隙盡可能變窄的方式配置。由此,能夠減少供給到原版M的配置空間的吹掃氣體33從第1面構件31與原版載置台11的間隙、以及第2面構件32與原版載置台11的間隙脫出。
The
另外,原版載置台11具有反射構件13(支承部16)、壁部17、罩構件18以及間隙規定構件34。反射構件13(支承部16)及壁部17如在第1~第2實施方式中說明的那樣設置在原版載置台11的上表面S上。如在第2實施方式中說明的那樣,罩構件18以相對於壁部17形成間隙19的方式設置於原版載置台11的上表面S,在X軸方向側的側面具有開口部18a。並且,在本實施方式的情況下,罩構件18能夠以相對於第1面構件31形成窄間隙的方式構成為與壁部17相同的高度。間隙限定構件34是用於相對於第1面構件31形成窄間隙的構件,以原版M的配置空間為基準(中心)而配
置在壁部17以及罩構件18的相反側(原版M的配置空間的-Y方向側)。間隙限定構件34能夠構成為與壁部17以及罩構件18相同的高度。
In addition, the original plate mounting table 11 includes a reflection member 13 (support portion 16 ), a
這樣,通過構成原版載置台11,能夠減少供給到原版M的配置空間的吹掃氣體33脫出的情形。另外,能夠減少吹掃氣體33經由壁部17與第1面構件31之間的間隙以及壁部17與罩構件18之間的間隙而侵入到測量光路12a的情形。在此,優選罩構件18的開口部18a的面積(總面積)大於壁部17與罩構件18的間隙的面積(總面積)。這是因為,在本實施方式的結構中,由於氣體14a難以從壁部17與罩構件18的間隙排出,因此在罩構件18的內部氣體14a停滯,容易引起測量光路12a的氛圍波動。另外,開口部18a可以在Y軸方向上形成在反射構件13與壁部17之間。在該情況下,開口部18a優選在Y軸方向上形成於盡可能遠離反射構件13的位置。這是為了在反射構件13附近的測量光路12a中抑制氣體14a的急劇的流速變化,降低測量光路12a的氛圍波動。
By configuring the master plate mounting table 11 in this way, it is possible to reduce the leakage of the
對本發明的第5實施方式進行說明。在本實施方式中,對構成為原版載置台11包括粗動載置台11a和微動載置台11b的定位裝置10D的結構例進行說明。需要說明的是,本實施方式只要沒有特別提及,則基本延續第1實施方式。另外,本實施方式也可以應用包括在第2實施方式
中說明的罩構件18的結構和/或包括在第3實施方式中說明的第1面構件31和第2面構件32的結構。
A fifth embodiment of the present invention will be described. In this embodiment, a structural example of the
圖7是表示本實施方式的定位裝置10D的結構的概略圖。圖7(a)表示定位裝置10D的側視圖,圖7(b)表示定位裝置10D的俯視圖。本實施方式的定位裝置10D中的原版載置台11能夠包括粗動載置台11a和微動載置台11b。
FIG. 7 is a schematic diagram showing the structure of the
粗動載置台11a具有用於相對於基座41至少在Y軸方向上相對移動的驅動機構42(致動器)。並且,Y軸方向上的粗動載置台11a的位置由第2測量部43測量。第2測量部43例如由雷射干涉儀構成,朝向設置於粗動載置台11a的反射構件44射出光,基於來自該反射構件44的反射光與參照光的干涉,能夠測量Y軸方向上的粗動載置台11a的位置。在圖7中,示出了第2測量部43的測量光路43a。在此,在本實施方式中,反射構件44設置於粗動載置台11a的側面,但也可以設置於粗動載置台11a的上表面。
The coarse motion mounting table 11a has a drive mechanism 42 (actuator) for relative movement with respect to the base 41 at least in the Y-axis direction. Furthermore, the position of the coarse motion mounting table 11a in the Y-axis direction is measured by the
另外,微動載置台11b具有用於保持原版M並且相對於粗動載置台11a至少在Y軸方向上相對移動的驅動機構45(致動器)。在本實施方式的情況下,反射構件13(支承部16)以及壁部17設置於微動載置台11b的上表面S。並且,壁部17以在反射構件13(支承部16)與原版M之間與反射構件13及原版M分離的方式被微動載置台11b支承。
In addition, the
在此,如圖8所示,壁部17也可以不由微動載置台11b支承,而由粗動載置台11a支承。圖8是表示壁部17被粗動載置台11a支承的結構的定位裝置10E的結構的概略圖。圖
8(a)表示定位裝置10E的側視圖,圖8(b)表示定位裝置10E的俯視圖。在圖8所示的定位裝置10E中,壁部17經由支承構件46被粗動載置台11a支承。具體而言,壁部17以在反射構件13(支承部16)與原版M之間與反射構件13及原版M分離的方式,經由支承構件46由粗動載置台11b支承。
Here, as shown in FIG. 8 , the
根據本實施方式的定位裝置10D~10E的結構,也能夠減少原版M的周圍氣體侵入到測量部12的測量光路12a的情形。因此,能夠降低由於測量光路12a中的氛圍波動而引起的測量部12的測量誤差,從而能夠高精度地對原版M進行定位。
According to the structure of the
本發明的實施方式的物品的製造方法例如適合於製造半導體器件等微器件、具有微細構造的元件等物品。本實施方式的物品的製造方法包括:使用上述曝光裝置在塗敷於基板的感光劑上形成潛像圖案的工序(對基板進行曝光的工序);以及對在該工序中形成有潛像圖案的基板進行顯影(加工)的工序。而且,該製造方法包括其它的公知的工序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、接合、封裝等)。本實施方式的物品的製造方法與以往的方法相比,在物品的性能、品質、生產率、生產成本中的至少1個方面是有利的。 The method for manufacturing articles according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having fine structures. The method of manufacturing an article according to this embodiment includes: a step of forming a latent image pattern on a photosensitive agent applied to a substrate using the above-mentioned exposure device (a step of exposing the substrate); and processing the latent image pattern formed in the step. The process of developing (processing) the substrate. Furthermore, this manufacturing method includes other well-known processes (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, cutting, bonding, packaging, etc.). The method of manufacturing an article according to this embodiment is advantageous in at least one aspect of the performance, quality, productivity, and production cost of the article compared with conventional methods.
本發明並不限定於上述實施方式,能夠在不脫離發明的精神和範圍的情況下進行各種變更和變形。因此,為了 公開發明的範圍而添加權利要求。 The present invention is not limited to the above-described embodiment, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, in order Claims are added to disclose the scope of the invention.
10A:定位裝置 10A: Positioning device
11:原版載置台 11:Original mounting platform
12:測量部 12:Measurement Department
12a:測量光路 12a:Measurement light path
13:反射構件 13: Reflective component
14:吹出部 14: Blowing part
14a:氣體 14a:Gas
16:支承部 16:Support part
17:壁部 17: Wall
S:上表面 S: upper surface
M:原版 M:Original
Claims (13)
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JPH1137895A (en) * | 1997-07-17 | 1999-02-12 | Nikon Corp | Inspection method for reflectance measuring sensor |
TW201632839A (en) * | 2014-11-28 | 2016-09-16 | Asml荷蘭公司 | Encoder, position measurement system and lithographic apparatus |
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JP3089802B2 (en) * | 1992-04-01 | 2000-09-18 | 株式会社ニコン | Stage position measuring apparatus, projection exposure apparatus and projection exposure method |
JP2001160531A (en) * | 1999-12-01 | 2001-06-12 | Canon Inc | Stage system |
JP2004241478A (en) | 2003-02-04 | 2004-08-26 | Nikon Corp | Exposure method and apparatus, and device manufacturing method |
JP4125315B2 (en) * | 2005-10-11 | 2008-07-30 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
JP2009141190A (en) | 2007-12-07 | 2009-06-25 | Nikon Corp | Exposure apparatus, exposure method, and method of manufacturing device |
JP2010161116A (en) | 2009-01-06 | 2010-07-22 | Canon Inc | Positioning apparatus, aligner using the same, and process of fabricating device |
JP5002613B2 (en) * | 2009-03-31 | 2012-08-15 | 株式会社東芝 | XY stage device |
JP5679850B2 (en) * | 2011-02-07 | 2015-03-04 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
JP5744593B2 (en) | 2011-03-29 | 2015-07-08 | キヤノン株式会社 | Metrology apparatus, lithographic apparatus, and device manufacturing method |
JP2017111243A (en) | 2015-12-15 | 2017-06-22 | キヤノン株式会社 | Stage device, lithography device, and article manufacturing method |
JP6916616B2 (en) * | 2016-12-13 | 2021-08-11 | キヤノン株式会社 | Lithography equipment, article manufacturing methods, and measuring equipment |
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JPH1137895A (en) * | 1997-07-17 | 1999-02-12 | Nikon Corp | Inspection method for reflectance measuring sensor |
TW201632839A (en) * | 2014-11-28 | 2016-09-16 | Asml荷蘭公司 | Encoder, position measurement system and lithographic apparatus |
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KR20210047259A (en) | 2021-04-29 |
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