JP2011033976A - Pattern forming method and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern forming method for suppressing non-uniformity of patterns formed on a substrate. <P>SOLUTION: The pattern forming method includes: executing first exposure of exposing each of the regions of a first group among a plurality of regions provided to a first substrate under mutually different exposure conditions and exposing each of the regions of a second group under the almost same exposure condition; performing first development of developing the regions of the first group among the plurality of regions exposed by the first exposure under the almost same development condition and developing the first part and second part of the regions of the second group under mutually different development conditions; determining a first exposure condition and a first development condition corresponding to a prescribed pattern on the basis of a development result by the first development; and forming the prescribed pattern on a second substrate by exposing the second substrate under the first exposure condition and developing it under the first development condition. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a pattern forming method and a device manufacturing method.

  In a manufacturing process of an electronic device such as a flat panel display, an exposure apparatus is used that illuminates a mask with exposure light and exposes a photosensitive substrate with exposure light from the mask irradiated onto a projection area of a projection optical system. The following patent document has a plurality of projection optical systems, and among these projection optical systems, for example, a part of the projection area of the second projection optical system is placed in a predetermined direction in the projection area of the first projection optical system. An example of a technique relating to a so-called multi-lens type exposure apparatus that exposes a substrate in an overlapping manner is disclosed.

JP 2003-151880 A

  In a multi-lens type exposure apparatus, for example, pattern images projected on overlapping portions of the respective projection regions accurately overlap on the substrate in an overlapping portion where two projection regions overlap in a predetermined direction and a non-overlapping portion where they do not overlap. Otherwise, the pattern formed on the substrate may be non-uniform, for example, the dimension of the pattern formed by the overlapping part is different from the dimension of the pattern formed by the non-overlapping part. As a result, a defective device may occur.

  An object of an aspect of the present invention is to provide a pattern forming method capable of suppressing nonuniformity of a pattern formed on a substrate. Another object of the present invention is to provide a device manufacturing method that can suppress the occurrence of defective devices.

  According to the first aspect of the present invention, there is provided a pattern forming method for forming a pattern on a photosensitive substrate, wherein each of a first group of regions among a plurality of regions provided on at least one first substrate is provided. Are exposed to exposure light under different exposure conditions, each of the second group of areas is exposed to exposure light under substantially the same exposure conditions, and a plurality of areas exposed by the first exposure are exposed. Among them, the first group is developed under substantially the same development conditions, the first development of developing the first part and the second part of the second group under different development conditions, and the first development Determining the first exposure condition and the first development condition corresponding to the predetermined pattern based on the development result by the step, exposing the second substrate different from the first substrate with the exposure light under the first exposure condition, and The second group is developed under one development condition. Forming a predetermined pattern, a pattern forming method comprising is provided.

  According to the second aspect of the present invention, there is provided a pattern forming method for forming a pattern on a photosensitive substrate, wherein the exposure light irradiated onto the projection area of the projection optical system is subjected to the exposure light irradiated to the projection area of the projection optical system. A first exposure of the first photosensitive substrate, a first development of the first photosensitive substrate subjected to the first exposure under each of a plurality of different development conditions, and a first exposure and a first development. And determining exposure conditions and development conditions corresponding to the predetermined pattern based on the pattern formed on the substrate, and second exposure by exposure light irradiated to the projection area under the exposure condition corresponding to the predetermined pattern. There is provided a pattern forming method including performing second exposure on the second substrate and second developing the second photosensitive substrate that has been second exposed under development conditions corresponding to a predetermined pattern.

  According to a third aspect of the present invention, there is provided a device manufacturing method comprising: forming a pattern on a substrate using the pattern forming method according to the first or second aspect; and processing the substrate on which the pattern is formed. A method is provided.

  According to the aspect of the present invention, the nonuniformity of the pattern formed on the substrate can be suppressed. Moreover, according to the aspect of this invention, generation | occurrence | production of a defective device can be suppressed.

It is a perspective view which shows an example of the exposure apparatus which concerns on this embodiment. It is a figure which shows the relationship between the projection area | region and board | substrate which concern on this embodiment. It is a schematic diagram which shows an example of the positional relationship of a 1st projection area | region and a 2nd projection area | region. It is a schematic diagram which shows an example of the positional relationship of a 1st projection area | region and a 2nd projection area | region. It is a schematic diagram which shows an example of the relationship between the pattern of a mask, and integrated exposure amount. It is a schematic diagram which shows an example of the relationship between the pattern of a mask, and integrated exposure amount. It is a schematic diagram which shows an example of the relationship between the pattern of a mask, and integrated exposure amount. It is a schematic diagram which shows an example of the relationship between the pattern of a mask, and integrated exposure amount. It is a schematic diagram which shows an example of the relationship between the pattern of a mask, and integrated exposure amount. It is a schematic diagram which shows an example of the pattern of a photosensitive film. It is a schematic diagram which shows an example of the relationship between the pattern of a mask, and integrated exposure amount. It is a schematic diagram for demonstrating the state from which the dimension of a photosensitive film changes by image development. It is a flowchart which shows an example of the pattern formation method which concerns on this embodiment. It is a flowchart which shows an example of the pattern formation method which concerns on this embodiment. It is a flowchart which shows an example of the pattern formation method which concerns on this embodiment. It is a schematic diagram for explaining an example of a procedure for determining a predetermined exposure condition and a predetermined development condition according to the present embodiment. It is a schematic diagram for explaining an example of a procedure for determining a predetermined exposure condition and a predetermined development condition according to the present embodiment. It is a schematic diagram for explaining an example of a procedure for determining a predetermined exposure condition and a predetermined development condition according to the present embodiment. It is a flowchart which shows an example of the device manufacturing method which concerns on this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each part will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

  FIG. 1 is a perspective view schematically showing an example of an exposure apparatus EX according to the present embodiment. In FIG. 1, the exposure apparatus EX includes a mask stage 1 that is movable while holding a mask M, a substrate stage 2 that is movable while holding a substrate P, and interference that measures the positions of the mask stage 1 and the substrate stage 2. The operation of the metering system 3, the illumination system IS that illuminates the mask M with the exposure light EL, the projection system PS that projects the pattern image of the mask M illuminated with the exposure light EL onto the substrate P, and the operation of the entire exposure apparatus EX. And a control device 4 for controlling.

  The mask M includes a reticle on which a device pattern projected onto the substrate P is formed. The substrate P is a photosensitive substrate and includes a base material such as a glass plate and a photosensitive film (coated photosensitive material) formed on the base material. In the present embodiment, the substrate P includes a large glass plate, and the size of one side of the substrate P is, for example, 500 mm or more. In the present embodiment, a rectangular glass plate having a side of about 3000 mm is used as the base material of the substrate P.

  In the present embodiment, the projection system PS has a plurality of projection optical systems. The illumination system IS has a plurality of illumination modules corresponding to a plurality of projection optical systems. Further, the exposure apparatus EX of the present embodiment projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus.

  In the present embodiment, the projection system PS has seven projection optical systems PL1 to PL7, and the illumination system IS has seven illumination modules IL1 to IL7. The number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have 11 projection optical systems, and the illumination system IS may have 11 illumination modules.

  In the following description, the projection optical systems PL1 to PL7 are appropriately referred to as first to seventh projection optical systems PL1 to PL7, respectively, and the illumination modules IL1 to IL7 are appropriately referred to as first to seventh illumination modules IL1 to IL7. Called IL7.

  The illumination system IS can irradiate the exposure light EL to each of the seven different illumination areas IR1 to IR7. The illumination areas IR1 to IR7 correspond to irradiation areas irradiated with the exposure light EL emitted from the first to seventh illumination modules IL1 to IL7. In the following description, the illumination areas IR1 to IR7 are appropriately referred to as first to seventh illumination areas IR1 to IR7.

  The illumination system IS illuminates each of the first to seventh illumination areas IR1 to IR7 with the exposure light EL. The illumination system IS illuminates a part of the mask M arranged in the first to seventh illumination regions IR1 to IR7 with the exposure light EL having a uniform illuminance distribution. In the present embodiment, bright lines (g line, h line, i line) emitted from the mercury lamp 5 are used as the exposure light EL emitted from the illumination system IS.

  In the present embodiment, the illumination system IS includes an elliptic mirror 6 that reflects light emitted from the mercury lamp 5, a dichroic mirror 7 that reflects at least part of the light from the elliptic mirror 6, and light from the dichroic mirror 7. Includes a relay optical system 8 including a collimating lens and a condensing lens, and a light guide unit 9 that branches the light from the relay optical system 8 and supplies the light to each of the first to seventh illumination modules IL1 to IL7. I have.

  Each of the first to seventh illumination modules IL1 to IL7 is supplied with a collimator lens to which light from the light guide unit 9 is supplied, a fly eye integrator to which light from the collimator lens is supplied, and light from a fly eye integrator. Equipped with a condenser lens. The exposure light EL emitted from the condenser lenses of the first to seventh illumination modules IL1 to IL7 is irradiated to the first to seventh illumination regions IR1 to IR7. Each of the first to seventh illumination modules IL1 to IL7 illuminates the first to seventh illumination regions IR1 to IR7 with the exposure light EL having a uniform illuminance distribution. The illumination system IS illuminates at least a part of the mask M arranged in the first to seventh illumination regions IR1 to IR7 with the exposure light EL having a uniform illuminance distribution.

  The mask stage 1 has a mask holding unit 10 that can hold the mask M, and is movable with respect to the first to seventh illumination regions IR1 to IR7 while holding the mask M. In the present embodiment, the mask holding unit 10 holds the mask M so that the lower surface (pattern forming surface) of the mask M and the XY plane are substantially parallel. The mask stage 1 can be moved by a driving force of a driving system including a linear motor, for example. In the present embodiment, the mask stage 1 can be moved in three directions of the X axis, the Y axis, and the θZ direction while the mask M is held by the mask holding unit 10 by the driving system.

  The projection system PS can irradiate the exposure light EL to seven different projection regions PR1 to PR7. The projection areas PR1 to PR7 correspond to irradiation areas irradiated with the exposure light EL emitted from the first to seventh projection optical systems PL1 to PL7. In the following description, the projection areas PR1 to PR7 are appropriately referred to as first to seventh projection areas PR1 to PR7.

  The projection system PS projects an image of the pattern of the mask M on each of the first to seventh projection regions PR1 to PR7. The projection system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto a part of the substrate P arranged in the first to seventh projection regions PR1 to PR7.

  In the present embodiment, each of the first to seventh projection optical systems PL1 to PL7 includes a shift adjustment mechanism, a scaling adjustment mechanism, an image plane adjustment mechanism, and the like as disclosed in, for example, Japanese Patent No. 4211272. An image characteristic adjusting device is included. The control device 4 controls the image formation characteristic adjusting device included in each of the first to seventh projection optical systems PL1 to PL7 to adjust the position and size of each of the first to seventh projection regions PR1 to PR7. be able to.

  The substrate stage 2 has a substrate holder 11 that can hold the substrate P, and is movable relative to the first to seventh projection regions PR1 to PR7 while holding the substrate P. In the present embodiment, the substrate holding unit 11 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel. The substrate stage 2 is movable by a driving force of a driving system including a linear motor, for example. In the present embodiment, the substrate stage 2 is moved in six directions including the X axis, the Y axis, the Z axis, the θX, the θY, and the θZ directions in a state where the substrate P is held by the substrate holding unit 11 by the operation of the drive system. It is movable.

  The interferometer system 3 optically measures the position of the first interferometer unit 3A capable of optically measuring the position of the mask stage 1 (mask M) in the XY plane and the position of the substrate stage 2 (substrate P) in the XY plane. And a second interferometer unit 3B capable of measuring. When executing the exposure process of the substrate P or when executing a predetermined measurement process, the control device 4 determines the mask stage 1 (mask M) and the substrate stage 2 (substrate P) based on the measurement result of the interferometer system 3. ) Position control is executed.

  As described above, the exposure apparatus EX of the present embodiment is an exposure apparatus that projects the pattern image of the mask M onto the substrate P while moving the mask M and the substrate P in a predetermined scanning direction (multi-lens scan). Exposure apparatus). When the substrate P is exposed, the control device 4 controls the mask stage 1 and the substrate stage 2 to move the mask M and the substrate P in a predetermined scanning direction in the XY plane. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the X-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the X-axis direction. The control device 4 moves the substrate P in the X-axis direction with respect to the first to seventh projection regions PR1 to PR7 of the projection system PS, and in synchronization with the movement of the substrate P in the X-axis direction, While moving the mask M in the X-axis direction with respect to the first to seventh illumination regions IR1 to IR7 of IS, the mask M is illuminated with the exposure light EL by the illumination system IS, and from the mask M via the projection system PS. The substrate P is irradiated with the exposure light EL. Thereby, the substrate P is exposed with the exposure light EL from the mask M irradiated to the first to seventh projection regions PR1 to PR7 of the first to seventh projection optical systems PL1 to PL7, and an image of the pattern of the mask M is formed. Projected onto the substrate P.

  FIG. 2 is a schematic diagram illustrating an example of a positional relationship between the first to seventh projection regions PR1 to PR7 and the substrate P, and illustrates a positional relationship within a plane including the surface of the substrate P. As shown in FIG. 2, in the present embodiment, each of the first to seventh projection regions PR1 to PR7 is a trapezoid in the XY plane. In the present embodiment, the first, third, fifth, and seventh projection regions PR1, PR3, PR5, and PR7 by the first, third, fifth, and seventh projection optical systems PL1, PL3, PL5, and PL7 are Y They are arranged at almost equal intervals in the axial direction. Further, the second, fourth, and sixth projection regions PR2, PR4, and PR6 by the second, fourth, and sixth projection optical systems PL2, PL4, and PL6 are arranged at substantially equal intervals in the Y-axis direction.

  The first, third, fifth, and seventh projection regions PR1, PR3, PR5, and PR7 are disposed on the −X side with respect to the second, fourth, and sixth projection regions PR2, PR4, and PR6. Further, the second, fourth, and sixth projection regions PR2, PR4, and PR6 are disposed between the first, third, fifth, and seventh projection regions PR1, PR3, PR5, and PR7 with respect to the Y-axis direction. .

  Each of the first to seventh projection regions PR1 to PR7 is arranged such that the integrated exposure amount in the X-axis direction (scanning direction) on the substrate P is equal. The end portions of the first to seventh projection regions PR1 to PR7 in the Y axis direction are arranged so as to overlap with each other in the Y axis direction, and the sum of the dimensions of the projection regions in the X axis direction is the same. It has been.

  In the present embodiment, the end of the projection area refers to a triangular portion including an edge inclined with respect to the X axis in the trapezoidal projection area in the XY plane. In the following description, the rectangular part of the projection area other than the end part is appropriately referred to as a central part.

  In the present embodiment, the + Y side end T1b of the first projection region PR1 and the −Y side end T2a of the second projection region PR2 are arranged so as to overlap with each other in the Y-axis direction. The + Y side end portion T2b of the second projection region PR2 and the −Y side end portion T3a of the third projection region PR3 are arranged so as to overlap in the Y-axis direction. The + Y side end T3b of the third projection region PR3 and the −Y side end T4a of the fourth projection region PR4 are arranged so as to overlap with each other in the Y-axis direction. The + Y side end T4b of the fourth projection region PR4 and the −Y side end T5a of the fifth projection region PR5 are arranged so as to overlap in the Y-axis direction. The + Y side end T5b of the fifth projection region PR5 and the −Y side end T6a of the sixth projection region PR6 are arranged so as to overlap with each other in the Y-axis direction. The + Y side end portion T6b of the sixth projection region PR6 and the −Y side end portion T7a of the seventh projection region PR7 are arranged so as to overlap with each other in the Y-axis direction.

  Regarding the X-axis direction, the sum of the dimension of the end T1b and the dimension of the end T2a, the sum of the dimension of the end T2b and the dimension of the end T3a, the dimension of the end T3b, and the dimension of the end T4a The sum of the sum, the size of the end T4b and the size of the end T5a, the sum of the size of the end T5b and the size of the end T6a, and the sum of the size of the end T6b and the size of the end T7a. Are almost the same.

  Further, with respect to the X-axis direction, the size of the central portion C1 of the first projection region PR1, the size of the central portion C2 of the second projection region PR2, the size of the central portion C3 of the third projection region PR3, and the fourth projection region The dimensions of the central portion C4 of PR4, the dimensions of the central portion C5 of the fifth projection region PR5, the dimensions of the central portion C6 of the sixth projection region PR6, and the dimensions of the central portion C7 of the seventh projection region PR7 are substantially the same. The same.

  In addition, with respect to the X-axis direction, the dimension of the central part C1 and the sum of the dimension of the end part T1b and the dimension of the end part T2a are substantially the same. The dimensions of the other central part and the sum of the dimensions of the end parts have a similar relationship.

  As a result, when the substrate P is exposed to the first to seventh projection regions PR1 to PR7 while moving in the X-axis direction, the integrated exposure amount in the X-axis direction on the substrate P becomes substantially the same.

  In the following description, a portion where the projection areas overlap in the substrate P is appropriately referred to as an overlapping portion.

  In the present embodiment, the overlapping portion B1 is provided on the substrate P by the first projection region PR1 and a part of the second projection region PR2. An overlapping portion B2 is provided on the substrate P by the second projection region PR2 and a part of the third projection region PR3. An overlapping portion B3 is provided on the substrate P by the third projection region PR3 and a part of the fourth projection region PR4. The overlapping portion B4 is provided on the substrate P by the fourth projection region PR4 and a part of the fifth projection region PR5. An overlapping portion B5 is provided on the substrate P by the fifth projection region PR5 and a part of the sixth projection region PR6. An overlapping portion B6 is provided on the substrate P by the sixth projection region PR6 and a part of the seventh projection region PR7.

  At least a part of the substrate P disposed in the overlapping part B1 is subjected to overlapping exposure by the first projection region PR1 and a part of the second projection region PR2. At least a part of the substrate P arranged in the overlapping part B2 is subjected to overlapping exposure by the second projection region PR2 and a part of the third projection region PR3. At least a part of the substrate P arranged in the overlapping part B3 is subjected to overlapping exposure by the third projection region PR3 and a part of the fourth projection region PR4. At least a part of the substrate P arranged in the overlapping part B4 is subjected to overlapping exposure by the fourth projection region PR4 and a part of the fifth projection region PR5. At least a part of the substrate P arranged in the overlapping part B5 is subjected to overlapping exposure by the fifth projection region PR5 and a part of the sixth projection region PR6. At least a part of the substrate P disposed in the overlapping part B6 is subjected to overlapping exposure by the sixth projection region PR6 and a part of the seventh projection region PR7. When the exposure of the substrate P is executed, the exposure light EL is irradiated to the first to seventh projection regions PR1 to PR7 in a state where the substrate P is arranged in at least a part of the first to seventh projection regions PR1 to PR7. Is done.

  Next, an example of the operation of the exposure apparatus EX will be described.

  In the present embodiment, the exposure apparatus EX is connected to a coater / developer apparatus including a coating apparatus for forming a photosensitive film on the substrate P and a developer apparatus for developing the exposed substrate P. The photosensitive substrate P on which the photosensitive film is formed in the coater / developer apparatus is carried into the exposure apparatus EX by a predetermined transport apparatus.

Note that, as described above, the base material of the substrate P includes a glass plate. In the following description, for simplicity of explanation, the base material is a glass plate, and a case where a photosensitive film is formed on the glass plate will be described as an example. However, the surface (base) of the base material is anti-reflective. It may be a membrane. Moreover, the surface (base) of the base material may be a part of, for example, a thin film transistor formed on a glass plate by the previous process. For example, the surface (base) of the base material is an oxide film such as SiO ₂ formed by the previous process, an insulating film such as SiO ₂ and SiNx, a conductor film (metal film) such as Cu and ITO, amorphous Si, etc. It may be at least one surface of the semiconductor film.

  After the substrate P before exposure is carried into the exposure apparatus EX and held on the substrate stage 2, the control device 4 starts exposure of the substrate P. In the exposure of the substrate P, the substrate P is moved in the scanning direction (X-axis direction) along the surface (XY plane) of the substrate P with respect to the first to seventh projection regions PR1 to PR7, and the mask M is moved to the first. Executed while moving in the scanning direction (X-axis direction) along the lower surface (XY plane) of the mask M with respect to the seventh illumination regions IR1 to IR7.

  After the exposure, the substrate P is unloaded from the substrate stage 2 and then transferred to the coater / developer apparatus and developed. As a result, a pattern of the photosensitive film (exposure pattern layer) is formed on the substrate P. Thereafter, a pattern (device pattern) is formed on the substrate P by performing a predetermined process such as an etching process.

  By the way, as described above, when the substrate P is exposed to the first to seventh projection regions PR1 to PR7 while moving in the X-axis direction, the accumulated exposure amount in the X-axis direction on the substrate P is the same. That is, with respect to the X-axis direction, the first to seventh projection regions PR1 to PR7 are set so that the dimensions of the center portions of the first to seventh projection regions PR1 to PR7 are the same as the sum of the dimensions of the end portions. Each shape, size, and positional relationship between the first to seventh projection regions PR1 to PR7 are defined. In other words, the first to seventh projection regions PR1 to PR7 overlap with each other in the overlapping portions (B1 to B6) and the non-overlapping non-overlapping portions so that the integrated exposure amounts on the substrate P are the same. The shape and size of each of the seventh projection areas PR1 to PR7 and the positional relationship between the first to seventh projection areas PR1 to PR7 are determined.

  FIG. 3 shows an example in which the positional relationship between the first projection region PR1 and the second projection region PR2 is an ideal state (target state) among the first to seventh projection regions PR1 to PR7. It is a schematic diagram.

  Here, the ideal state is a state in which the integrated exposure amount in the X-axis direction (scanning direction) of the exposure light EL irradiated to the projection areas (PR1, PR2) adjacent to each other in the Y-axis direction is equal, that is, The sum of the dimension of one projection area (PR1) and the dimension of the other projection area (PR2) in the X-axis direction at the overlapping portion between the projection area (PR1) and the other projection area (PR2) is non-overlapping This means that the dimensions of the projection areas (PR1, PR2) of one and the other in the part are the same.

  In FIG. 3, the overlapping part B1 is formed only by the end part T1b and the end part T2a. The non-overlapping part A1 is formed only by the central part C1. The non-overlapping part A2 is formed only by the central part C2. In the example shown in FIG. 3, the integrated exposure amount in the overlapping portion B1, the integrated exposure amount in the non-overlapping portion A1 (center portion C1), and the integrated exposure amount in the non-overlapping portion A2 (center portion C2) are the same. is there. In this case, the dimension of the pattern formed on the substrate P by the exposure light EL irradiated to the central portion C1 of the first projection region PR1 that forms the non-overlapping portion A1, and the second projection region PR2 that forms the non-overlapping portion A2. The dimension of the pattern formed on the substrate P by the exposure light EL irradiated to the central portion C2 of the substrate and the substrate P by the exposure light EL irradiated to the overlapping portion B1 between the first projection region PR1 and the second projection region PR2. The dimensions of the pattern to be formed are almost the same.

  FIG. 4 is a schematic diagram illustrating an example of a state in which the positional relationship between the first projection region PR1 and the second projection region PR2 is deviated from the ideal state among the first to seventh projection regions PR1 to PR7. It is.

  In FIG. 4, the first projection region PR1 and the second projection region PR2 are close to each other as compared to the ideal state, but may be separated.

  Here, in the following description, a state where the projection regions (PR1, PR2) are deviated from the ideal state is appropriately referred to as a joint displacement state, and a deviation amount from the ideal state is appropriately referred to as a deviation amount.

  In FIG. 4, the overlapping part B1 is formed by a part of the center part C1, an end part T1b, a part of the center part C2, and an end part T2a. The non-overlapping part A1 is formed by a part of the central part C1. The non-overlapping part A2 is formed by a part of the central part C2. In the example shown in FIG. 4, the integrated exposure amount in the overlapping portion B1 is different from the integrated exposure amount in the non-overlapping portions A1 and A2. In this case, the dimension of the pattern formed on the substrate P by the exposure light EL irradiated to the central portion C1 of the first projection region PR1 that forms the non-overlapping portion A1, and the second projection region PR2 that forms the non-overlapping portion A2. The dimension of the pattern formed on the substrate P by the exposure light EL irradiated to the central portion C2 of the substrate and the substrate P by the exposure light EL irradiated to the overlapping portion B1 between the first projection region PR1 and the second projection region PR2. The dimension of the pattern to be formed is different.

  In the example shown in FIG. 4, the pattern formed on the substrate P becomes non-uniform, and a defective device may occur.

  Therefore, in the present embodiment, for example, as shown in FIG. 4, even when the positional relationship between adjacent projection regions deviates from the ideal state, a process including exposure conditions and development conditions that can prevent the pattern from becoming non-uniform. Conditions are predetermined. Then, an exposure process and a development process for manufacturing a device on the substrate P are executed based on the determined process conditions.

  In the present embodiment, the exposure conditions include the integrated exposure amount of the exposure light EL that is irradiated onto the projection area where the substrate P is disposed. The development conditions include the development time of the substrate P irradiated with the exposure light EL (the time during which the developer and the photosensitive film of the substrate P are in contact), the type (physical properties) of the developer to be used, and the like.

  In the following description, a predetermined exposure condition that can prevent the pattern from becoming nonuniform is referred to as an optimal integrated exposure amount as appropriate, and the pattern can be suppressed from becoming nonuniform and the pattern can be set to a desired dimension. The predetermined development conditions that can be obtained are appropriately referred to as optimum development time.

  In other words, the predetermined exposure condition includes an integrated exposure amount at which the dimension of the pattern formed on the substrate P becomes uniform. In the present embodiment, the integrated exposure amount is determined by the dimension of the pattern formed on the substrate P by the exposure light EL irradiated to the non-overlapping portion A1 of the first projection region PR1, and the non-overlapping portion A2 of the second projection region PR2. The dimension of the pattern formed on the substrate P by the exposure light EL irradiated on the substrate and the pattern formed on the substrate P by the exposure light EL irradiated on the overlapping portion B1 between the first projection region PR1 and the second projection region PR2. The integrated exposure amount in the first projection region PR1 and the second projection region PR2 that substantially coincide with each other is included. The predetermined development conditions include a development time in which the dimension of the pattern formed on the substrate P is a target value.

  Hereinafter, with reference to FIGS. 5 to 12, the optimum integrated exposure amount and the optimum development time that can make the pattern uniform on the substrate P will be described. In the following description, the non-overlapping portion A1 of the first projection region PR1 (or the non-overlapping portion A2 of the second projection region PR2) and the overlapping portion B1 of the first projection region PR1 and the second projection region PR2 will be described. However, the same applies to the non-overlapping portions of the other projection regions (PR2 to PR7) and the overlapping portions of the other projection regions (PR3 to PR7).

  5 to 9 and 11 are schematic diagrams showing the relationship between the pattern of the mask M and the integrated exposure amount in the projection region where the substrate P is arranged. The pattern of the mask M is a line and space pattern, and a transmission part (space part) 21 that transmits the exposure light EL from the illumination system IS and a light shielding part (line part) that blocks the exposure light EL from the illumination system IS. ) 22.

The substrate P has a photosensitive film. In this embodiment, the photosensitive film of the substrate P is a so-called positive type in which a portion irradiated with the exposure light EL is removed by development. By irradiating the substrate P with the exposure light EL from the mask M and developing, a pattern (line and space pattern) corresponding to the pattern of the mask M is formed on the substrate P (photosensitive film). Target dimension of the pattern formed on the substrate P (line pattern) (target line width) is W _T. In FIG. 5, etc., and dimensions of the line portion 22 of the mask M, but the target dimension W _T of the pattern formed on the substrate P is shown to be the same, the dimensions of the line portion 22 and the target dimension W The relationship (ratio) with _T varies depending on, for example, the projection magnification of the projection optical system. In the graphs shown in FIGS. 5 to 9 and 11, the horizontal axis indicates the position of the surface of the substrate P, and the vertical axis indicates the value of the integrated exposure amount in the projection region.

  FIG. 5 shows the pattern of the mask M and the exposure light EL from the mask M irradiated to the central portion C1 (non-overlapping portion A1) of the first projection region PR1 of the first projection optical system PL1 in the central portion C1. It is a schematic diagram which shows the relationship with distribution of integrated exposure amount. In the graph shown in FIG. 5, a line LC1 indicates the distribution of the integrated exposure amount in the central portion C1. The value of the integrated exposure amount corresponding to the space portion 21 is Jh.

  FIG. 6 shows the relationship between the pattern of the mask M and the distribution of the integrated exposure amount when the substrate P is subjected to overlapping exposure when the positional relationship between the first projection region PR1 and the second projection region PR2 is an ideal state. It is a schematic diagram shown. In the graph shown in FIG. 6, the line L1b shows an example of the distribution of the integrated exposure amount at the end T1b where the substrate P is arranged, and the line L2a is the distribution of the integrated exposure amount at the end T2a where the substrate P is arranged. An example is shown. A line LB1a indicates the sum of the integrated exposure amount indicated by the line L1b and the integrated exposure amount indicated by the line L2a, that is, the distribution of the integrated exposure amount in the overlapping portion B1 where the substrate P is disposed.

  Since the positional relationship between the first projection region PR1 and the second projection region PR2 is an ideal state, in the substrate P, the distribution of the integrated exposure amount at the end T1b and the distribution of the integrated exposure amount at the end T2a coincide. Further, since the positional relationship between the first projection region PR1 and the second projection region PR2 is an ideal state, the distribution of the integrated exposure amount in the central portion C1 (non-overlapping portion A1) shown in FIG. 5 and the overlapping portion shown in FIG. The distribution of the integrated exposure amount in B1 matches.

  FIG. 7 shows the relationship between the pattern of the mask M and the distribution of the integrated exposure amount when the substrate P is subjected to overlapping exposure when the positional relationship between the first projection region PR1 and the second projection region PR2 is a joint displacement state. It is a schematic diagram which shows. In the graph shown in FIG. 7, the line L1b shows an example of the distribution of the integrated exposure amount at the end T1b where the substrate P is disposed, and the line L2a is the distribution of the integrated exposure amount at the end T2a where the substrate P is disposed. An example is shown. A line LB1b indicates the sum of the integrated exposure amount indicated by the line L1b and the integrated exposure amount indicated by the line L2a, that is, the distribution of the integrated exposure amount in the overlapping portion B1 where the substrate P is disposed.

  Since the positional relationship between the first projection region PR1 and the second projection region PR2 is in a jointly shifted state, the distribution of the cumulative exposure amount at the end portion T1b and the distribution of the cumulative exposure amount at the end portion T2a are shifted on the substrate P.

  Further, since the positional relationship between the first projection region PR1 and the second projection region PR2 is in a jointly shifted state, the distribution of the integrated exposure amount in the central portion C1 (non-overlapping portion A1) and the overlapping portion B1 shown in FIGS. The value and the distribution and value of the integrated exposure amount in the overlapping portion B1 shown in FIG. 7 are different.

  FIG. 8 shows the relationship between the pattern of the mask M and the distribution of the integrated exposure amount when the substrate P is subjected to overlapping exposure when the positional relationship between the first projection region PR1 and the second projection region PR2 is a joint displacement state. It is a schematic diagram which shows. The deviation amount in the example shown in FIG. 8 is larger than the deviation amount in the example shown in FIG. In the graph shown in FIG. 8, the line L1b shows an example of the distribution of the integrated exposure amount at the end T1b where the substrate P is disposed, and the line L2a is the distribution of the integrated exposure amount at the end T2a where the substrate P is disposed. An example is shown. A line LB1c indicates the sum of the integrated exposure amount indicated by the line L1b and the integrated exposure amount indicated by the line L2a, that is, the distribution of the integrated exposure amount in the overlapping portion B1 where the substrate P is disposed.

  Since the positional relationship between the first projection region PR1 and the second projection region PR2 is a joint displacement state, and the displacement amount is larger than the example shown in FIG. 7, the distribution of the integrated exposure amount at the end T1b in the substrate P. And the distribution of the integrated exposure amount at the end T2a is greatly different from the example shown in FIG.

  Further, since the positional relationship between the first projection region PR1 and the second projection region PR2 is in a jointly shifted state, the integrated exposure at the central portion C1 (non-overlapping portion A1) and the overlapping portion B1 shown in FIGS. The distribution and value of the amount are different from the distribution and value of the integrated exposure amount in the overlapping portion B1 shown in FIG.

  FIG. 9 shows the lines LB1a, LB1b, and LB1c shown in FIGS. 5 to 8 in one graph. As shown in FIG. 9, there is a value Jk in which the integrated exposure amount in the ideal state and the integrated exposure amount in the joint shift state coincide. That is, by setting the integrated exposure amount in the non-overlapping portion A1 to the value Jh, the integrated exposure amount in the non-overlapping portion A1 and the integrated exposure amount in the overlapping portion B1 in the ideal state and the joint displacement state are values Jk. Match.

  Accordingly, as the photosensitive film used for the substrate P, when the integrated exposure amount of the exposure light EL is greater than or equal to the value Jk, it is removed by development, and when it is less than the value Jk, it remains on the substrate P even after development (the pattern is changed). The photosensitive film formed on the substrate P by the exposure light EL irradiated to the non-overlapping portion A1 in each of the ideal state and the joint shift state by using the photosensitive film having characteristics (photosensitive characteristics, solubility). And the dimension of the pattern of the photosensitive film formed on the substrate P by the exposure light EL irradiated to the overlapping portion B1 can be matched.

  FIG. 10 shows that the first projection region PR1 and the second projection region PR2 are irradiated with the exposure light EL and then the exposure light EL is irradiated so that the integrated exposure amount in the non-overlapping portions A1 and A2 becomes the value Jh. A pattern of a photosensitive film formed on the substrate P by developing the substrate P is shown. In FIG. 10, the line Ra is an ideal state as described with reference to FIG. 6, and when the substrate P is subjected to overlapping exposure so that the integrated exposure amount in the non-overlapping portions A <b> 1 and A <b> 2 becomes the value Jh. The outline (outer shape) of the pattern of the photosensitive film after development is shown. The line Rb is a state after development in the case where the substrate P is overlapped and exposed so that the integrated exposure amount in the non-overlapping portions A1 and A2 becomes the value Jh as described with reference to FIG. The outline (outer shape) of the pattern of the photosensitive film is shown. The line Rc indicates a photosensitive film after development when the substrate P is overlapped and exposed so that the accumulated exposure amount in the non-overlapping portion A1 becomes the value Jh as described with reference to FIG. The outline (outer shape) of the pattern is shown.

  When the photosensitive film of the substrate P is a positive type and has a photosensitive characteristic (solubility) that is removed by development when the integrated exposure amount of the irradiated exposure light EL is equal to or greater than the value Jk, the value corresponding to the value Jk By irradiating the photosensitive film having photosensitive characteristics with the exposure light EL so that the integrated exposure amount at the non-overlapping portions A1 and A2 becomes the value Jh, the dimension of the pattern after development of the photosensitive film exposed in an ideal state And the dimension of the pattern after development of the photosensitive film exposed in the joint misalignment state can be matched. In the example shown in FIG. 10, the dimension of the pattern after development of the photosensitive film exposed in the ideal state and the dimension of the pattern after development of the photosensitive film exposed in the joint displacement state coincide with each other with the value Wa. Yes.

  The dimension of the photosensitive film pattern is the width (line width) of the photosensitive film pattern formed in a line shape on the substrate P in accordance with the line and space pattern of the mask M. Say width. In the present embodiment, the bottom width refers to the distance between the intersection between the surface of the substrate and one side surface of the photosensitive film and the intersection between the surface of the substrate and the other side surface of the photosensitive film.

  As described above, the integrated exposure value Jh in the non-overlapping portions A1 and A2 is determined according to the photosensitive characteristic (solubility) of the substrate P (photosensitive film), and the integrated exposure amount in the non-overlapping portions A1 and A2 is the value Jh. By irradiating the first projection region PR1 and the second projection region PR2 with the exposure light EL, a pattern having the same dimension Wa is formed on the substrate P in each of the ideal state and the joint displacement state. The

  That is, even when the joint is shifted, the size of the pattern formed on the substrate P by the exposure light EL irradiated to the non-overlapping portions A1 and A2 and the substrate P by the exposure light EL irradiated to the overlapping portion B1. The dimensions of the pattern formed in the same are the same. Therefore, it is possible to prevent the pattern formed on the substrate P from becoming non-uniform.

FIG. 11 shows distributions of the integrated exposure amounts in the ideal state and the joint shift state when the values of the integrated exposure amounts in the non-overlapping portions A1 and A2 are changed. Line LP1a is an ideal state, shows a case where the value of the integrated exposure amount of the non-overlapping portions A1, A2 (central C1, C2) is Jh _1, line LP1b is a joint displacement state, non The case where the value of the integrated exposure amount of the overlapping portions A1 and A2 (center portions C1 and C2) is Jh ₁ is shown. Line LQ1a is an ideal state, shows a case where the value of the integrated exposure amount of the non-overlapping portions A1, A2 (central C1, C2) is Jh ₁ different Jh _2, line LQ1b is a joint displacement state there are, it shows a case where the value of the integrated exposure amount of the non-overlapping portions A1, A2 (central C1, C2) are Jh _2. Line LR1a is an ideal state, shows a case where the value of the integrated exposure amount of the non-overlapping portions A1, A2 (central C1, C2) are different Jh ₃ and Jh ₁ and Jh _2, line LR1b is splicing A case is shown in which the values of the integrated exposure amounts of the non-overlapping portions A1 and A2 (center portions C1 and C2) are Jh ₃ in a shifted state.

As shown in FIG. 11, even when the value of the integrated exposure amount in the non-overlapping portion A1 changes to the values Jh ₁ , Jh ₂ , and Jh ₃ , the integrated exposure amount in the ideal state and the integrated exposure amount in the joint shift state are different. There are matching values Jk ₁ , Jk ₂ , Jk ₃ . Thereby, according to the photosensitive characteristic of the substrate P (photosensitive film), for example, by determining an optimum value from the values Jh ₁ , Jh ₂ , Jh ₃ , the pattern formed on the substrate P after development is changed. It can be made uniform.

For example, when the photosensitive film of the substrate P has a photosensitive characteristic that is removed by development when the integrated exposure amount of the irradiated exposure light EL is equal to or greater than the value Jk ₁ , the non-overlapping portions A1, A2 (center portion C1, The value Jh ₁ is determined as the integrated exposure amount in C2). Similarly, a photosensitive film on the substrate P is, if having a photosensitive characteristic which is removed by development when integrated exposure amount irradiated exposure light EL is the value Jk ₂ or more, the non-overlapping portions A1, A2 (central portion C1 of accumulative exposure in C2), the value Jh ₂ is determined. The photosensitive layer of the substrate P, when having a photosensitive characteristic which is removed by development when integrated exposure amount irradiated exposure light EL is the value Jk ₃ or more, the non-overlapping portions A1, A2 (central portion C1, accumulative exposure in C2), the value Jh ₃ is determined.

  Thus, the integrated exposure amount Jh that can make the pattern dimension uniform on the substrate P is determined according to the photosensitive characteristics of the substrate P.

In the following description, the integrated exposure amount in the non-overlapping portion (center portion) that can prevent the pattern from becoming nonuniform on the substrate P is appropriately referred to as an optimal integrated exposure amount J _OPT .

Incidentally, the dimension Wa of the pattern shown in FIG. 10 is different from the target dimension _{W T.} That is, the substrate P, but becomes uniform dimension Wa of the pattern, the dimension Wa is different from the target dimension W _T. Therefore, in the present embodiment, by adjusting the developing time T, the dimension of the pattern of the substrate P (the pattern of photosensitive layer), and the target dimension W _T.

FIG. 12 is a schematic diagram showing a state in which the dimension of the pattern is adjusted according to the development time T. In the development process, the contour (outer shape) of the photosensitive film changes isotropically. That is, as shown by the arrow in FIG. 12, the dimension of the photosensitive film isotropically decreases by the development process. Therefore, by adjusting the developing time T, the pattern of the photoresist dimensions Wa, it is possible to change the pattern of the photosensitive film of dimensions W _T.

In the following description, the developing time dimension Wa of uniform pattern formed on the substrate P can be the target dimension W _T appropriately, optimum developing time T _OPT, referred to as.

The optimum integrated exposure amount J _OPT corresponding to the predetermined exposure condition and the optimum development time T _OPT corresponding to the predetermined development condition have been described above with reference to FIGS.

Hereinafter, an example of a pattern formation method including a method for determining the optimum integrated exposure amount J _OPT and the optimum development time T _OPT will be described.

In the pattern forming method according to the present embodiment, as shown in the flowchart of FIG. 13, a predetermined exposure condition (optimum integrated exposure amount J _OPT ) and a predetermined development condition (optimum development time) that can prevent the pattern from becoming uneven. (T _OPT ) is determined (step SP1), the substrate P is exposed under the determined predetermined exposure condition (optimum integrated exposure amount J _OPT ), and the determined predetermined development condition (optimum development time T _OPT). ) To develop the substrate P (step SP2).

In step SP1, in order to determine a predetermined exposure condition (optimum integrated exposure amount J _OPT ) and a predetermined development condition (optimum development time T _OPT ), the process of exposing the substrate and the exposed substrate are developed. Processing is executed. In step SP2, in order to form a device (device pattern) on the substrate P, a process of exposing the substrate under the determined predetermined exposure conditions and a process of developing the substrate under the determined predetermined development conditions are performed. Executed.

In the following description, in order to determine the optimum integrated exposure amount J _OPT and the optimum development time T _OPT , the exposure executed in step SP1 is appropriately referred to as test exposure, and the development executed in step SP1 is appropriately tested. This is called development. Further, the substrate used in step SP1 is appropriately referred to as a test substrate Pt. In order to form a device pattern, the exposure executed in step SP2 is appropriately referred to as main exposure, and the development executed in step SP2 is appropriately referred to as main development.

In the present embodiment, step SP1 includes test exposure of the test substrate Pt with the exposure light EL from the mask M irradiated onto the projection area of the projection optical system under different exposure conditions, and different developments. Test development of the test substrate Pt subjected to test exposure under each of the conditions, and predetermined exposure conditions (optimum integrated exposure amount J _OPT ) based on the pattern formed on the test substrate Pt by the test exposure and test development, and Determining predetermined development conditions (optimal development time T _OPT ).

In this embodiment, in step SP2, the substrate P is exposed with the exposure light EL from the mask M irradiated onto the projection area of the projection optical system under the predetermined exposure condition (optimum integrated exposure amount J _OPT ) determined in step SP1. The main exposure, and the main development of the substrate P subjected to the main exposure under the predetermined development condition (optimum development time T _OPT ) determined in step SP1.

  Hereinafter, a case where the test exposure is performed using the first projection optical system PL1 among the first to seventh projection optical systems PL1 to PL7 as the test exposure will be described as an example. Note that the test exposure may be performed using at least one of the second to seventh projection optical systems PL2 to PL7 other than the first projection optical system PL1. In the following description, the first projection optical system PL1 is appropriately referred to as a projection optical system PL, and the first projection region PR1 of the first projection optical system PL1 is appropriately referred to as a projection region PR.

  In the test exposure, the projection region PR where the test substrate Pt is arranged is irradiated with the exposure light EL a plurality of times, and the test substrate Pt is subjected to overlapping exposure. In the following description, a portion where the test substrate Pt is subjected to overlapping exposure is appropriately referred to as an overlapping portion. In the present embodiment, the first test substrate Pt1 and the second test substrate Pt2 are used as the test substrate Pt.

  In the present embodiment, the test exposure is performed from the mask M irradiated to the projection region PR so that the accumulated exposure amount in the projection region PR of the projection optical system PL becomes the first value Ja as shown in the flowchart of FIG. Exposing the first area AR1 of the first test substrate Pt1 with the exposure light EL (step SA1), and the projection area PR so that the integrated exposure amount at the overlapping portion of the projection area PR becomes the first value Ja. Multiple exposure of the second area AR2 of the first test substrate Pt1 with the exposure light EL from the mask M irradiated to the projection area PR at each of a plurality of different positions (step SA2), and integration in the projection area PR The third area AR3 of the first test substrate Pt1 is exposed by the exposure light EL from the mask M irradiated to the projection area PR so that the exposure amount becomes a second value Jb different from the first value Ja. The projection region PR was irradiated at each of a plurality of different positions with respect to the projection region PR so that the integrated exposure amount at the overlapping portion of the projection region PR becomes the second value Jb. Overexposure is performed on the fourth area AR4 of the first test substrate Pt1 with the exposure light EL from the mask M (step SA4), and the integrated exposure amount in the projection area PR of the projection optical system PL becomes the first value Ja. Then, exposing the fifth area AR5 of the second test substrate Pt2 with the exposure light EL from the mask M irradiated to the projection area PR (step SA5), and the integrated exposure amount in the overlapping area of the projection area PR is the first value. The sixth area AR of the second test substrate Pt2 is exposed to the exposure light EL from the mask M irradiated to the projection area PR at each of a plurality of positions different from the projection area PR so as to be Ja. The including that overlapping exposure (step SA6), the.

  In the present embodiment, as shown in the flowchart of FIG. 15, the test development is performed by developing the first test substrate Pt1 on which the first to fourth regions AR1 to AR4 are exposed for the first time Ta, A photosensitive film pattern is formed in each of the first to fourth areas AR1 to AR4 of Pt1 (step SB1), and the second test substrate Pt2 on which the fifth and sixth areas AR5 and AR6 are exposed is formed on the first. Developing at a second time Tb different from the time Ta to form a pattern of a photosensitive film in each of the fifth and sixth regions AR5 and AR6 of the second test substrate Pt2 (step SB2).

  In the following description, the pattern of the photosensitive film formed in the first area AR1 after the test development is appropriately referred to as a first pattern. Similarly, after the test development, the pattern of the photosensitive film formed in each of the second, third, fourth, fifth and sixth regions AR2, AR3, AR4, AR5, AR6 is appropriately changed to the second, third, third, These are called fourth, fifth and sixth patterns.

  FIG. 16 is a schematic diagram illustrating an example of the first test substrate Pt1, and FIG. 17 is a schematic diagram illustrating an example of the second test substrate Pt2. In FIGS. 16 and 17, the shape of the projection region PR is a rectangle.

  In the present embodiment, as shown in FIG. 16, the first test substrate Pt1 is exposed with the exposure light EL from the mask M irradiated to the projection region PR so that the integrated exposure amount in the projection region PR becomes the first value Ja. The first area AR1 is exposed (step SA1).

In the present embodiment, when the first area AR1 is exposed, the integrated exposure amount in the projection area PR becomes the first value Ja while the position of the first test substrate Pt1 with respect to the projection area PR is fixed. Overlap exposure is performed. That is, in the ideal state, the first area AR1 is subjected to overlapping exposure so that the integrated exposure amount in the projection area PR becomes the first value Ja. For example, the exposure light EL from the mask M is irradiated onto the projection region PR so that the exposure amount in the projection region PR is 1 / H ₁ of the first value Ja, and the position of the first test substrate Pt1 is fixed. , H _One- time overlap exposure is executed. In addition, when performing overlapping exposure, the exposure amount in each exposure may be different. Further, the exposure light EL from the mask M is irradiated to the projection region PR so that the exposure amount in the projection region PR becomes the first value Ja, and the exposure is performed only once in a state where the position of the first test substrate Pt1 is fixed. (Single exposure) may be used.

  Overlap exposure is performed in the joint misalignment state on the second area AR2 of the first test substrate Pt1 (step SA2). As shown in FIG. 16, in the present embodiment, the projection region PR is at each of two different positions with respect to the projection region PR so that the integrated exposure amount at the overlapping portion of the projection region PR becomes the first value Ja. The second area AR2 of the first test substrate Pt1 is subjected to overlapping exposure with the exposure light EL from the mask M irradiated on the surface.

  When the second area AR2 is exposed, the projection area PR is irradiated with the exposure light EL from the mask M so that the exposure amount in the projection area PR is ½ of the first value Ja, and is arranged in the projection area PR. The second area AR2 of the first test substrate Pt1 is exposed at each of two different positions with respect to the projection area PR, and is exposed twice. In the present embodiment, of the two overlapping exposures, the distance (deviation) between the position of the substrate P relative to the projection region PR in the first exposure and the position of the substrate P relative to the projection region PR in the second exposure. The amount is, for example, 2 μm.

Note that the overlapping exposure is not limited to two times, and can be performed any number of times equal to or more than three times. For example, when overlapping exposure is performed H ₂ times, the exposure amount in the projection region PR in one exposure is set to 1 / H ₂ of the first value Ja. In addition, when performing overlapping exposure, the exposure amount in each exposure may be different.

  In addition, the third area AR3 of the first test substrate Pt1 is exposed with the exposure light EL from the mask M irradiated on the projection area PR so that the integrated exposure amount in the projection area PR becomes the second value Jb (step). SA3). The second value Jb is different from the first value Ja. In the present embodiment, the second value Jb is, for example, 1.2 times the first value Ja.

In the present embodiment, when the third area AR3 is exposed, the integrated exposure amount in the projection area PR becomes the second value Jb in a state where the position of the first test substrate Pt1 with respect to the projection area PR is fixed. Overlap exposure is performed. That is, in the ideal state, the third area AR3 is subjected to overlapping exposure so that the integrated exposure amount in the projection area PR becomes the second value Jb. For example, the exposure light EL from the mask M is irradiated onto the projection region PR so that the exposure amount in the projection region PR is 1 / H ₃ of the second value Jb, and the position of the first test substrate Pt1 is fixed. , H Overlap exposure is executed _three times. In addition, when performing overlapping exposure, the exposure amount in each exposure may be different. Further, the exposure light EL from the mask M is irradiated to the projection region PR so that the exposure amount in the projection region PR becomes the second value Jb, and the exposure is performed only once in a state where the position of the first test substrate Pt1 is fixed. (Single exposure) may be used.

  Overlapping exposure is performed in a joint misalignment state on the fourth area AR4 of the first test substrate Pt1 (step SA4). As shown in FIG. 16, in the present embodiment, the projection region PR is at each of two different positions with respect to the projection region PR so that the integrated exposure amount at the overlapping portion of the projection region PR becomes the second value Jb. The fourth area AR4 of the first test substrate Pt1 is subjected to overlapping exposure with the exposure light EL from the mask M irradiated on the surface.

  When the fourth area AR4 is exposed, the projection area PR is irradiated with the exposure light EL from the mask M so that the exposure amount in the projection area PR is ½ of the second value Jb, and is arranged in the projection area PR. The fourth area AR4 of the first test substrate Pt1 is exposed at each of two different positions with respect to the projection area PR, and is exposed twice. In the present embodiment, of the two overlapping exposures, the distance (deviation) between the position of the substrate P relative to the projection region PR in the first exposure and the position of the substrate P relative to the projection region PR in the second exposure. The amount is, for example, 2 μm.

Note that the overlapping exposure is not limited to two times, and can be performed any number of times equal to or more than three times. For example, when the overlap exposure is performed H ₄ times, the exposure amount in the projection region PR in one exposure is set to 1 / H ₄ of the first value Ja. In addition, when performing overlapping exposure, the exposure amount in each exposure may be different.

  Further, as shown in FIG. 17, the fifth region of the second test substrate Pt2 is exposed with the exposure light EL from the mask M irradiated on the projection region PR so that the integrated exposure amount in the projection region PR becomes the first value Ja. AR5 is exposed (step SA5).

In the present embodiment, when the fifth area AR5 is exposed, the integrated exposure amount in the projection area PR becomes the first value Ja while the position of the second test substrate Pt2 with respect to the projection area PR is fixed. Overlap exposure is performed. That is, in the ideal state, the fifth area AR5 is subjected to overlapping exposure so that the integrated exposure amount in the projection area PR becomes the first value Ja. For example, the exposure light EL from the mask M is irradiated onto the projection region PR so that the exposure amount in the projection region PR is 1 / H ₅ of the first value Ja, and the position of the second test substrate Pt2 is fixed. , H ₅ overlapping exposures are performed. In addition, when performing overlapping exposure, the exposure amount in each exposure may be different. Further, the exposure light EL from the mask M is irradiated to the projection region PR so that the exposure amount in the projection region PR becomes the first value Ja, and the exposure is performed only once in a state where the position of the first test substrate Pt1 is fixed. (Single exposure) may be used.

  Overlap exposure is performed on the sixth area AR6 of the second test substrate Pt2 in a jointly shifted state (step SA6). As shown in FIG. 17, in the present embodiment, the projection region PR is at each of two different positions with respect to the projection region PR so that the integrated exposure amount at the overlapping portion of the projection region PR becomes the first value Ja. The sixth area AR6 of the second test substrate Pt2 is subjected to overlapping exposure with the exposure light EL from the mask M irradiated on the surface.

  When the sixth area AR6 is exposed, the projection area PR is irradiated with the exposure light EL from the mask M so that the exposure amount in the projection area PR is ½ of the first value Ja, and is arranged in the projection area PR. The sixth area AR6 of the second test substrate Pt2 is exposed at each of two different positions with respect to the projection area PR, and is exposed twice. In the present embodiment, of the two overlapping exposures, the distance (deviation) between the position of the substrate P relative to the projection region PR in the first exposure and the position of the substrate P relative to the projection region PR in the second exposure. The amount is, for example, 2 μm.

Note that the overlapping exposure is not limited to two times, and can be performed any number of times equal to or more than three times. For example, when overlapping exposure is performed H ₆ times, the exposure amount in the projection region PR in one exposure is set to 1 / H ₆ of the first value Ja. In addition, when performing overlapping exposure, the exposure amount in each exposure may be different.

  Next, development processing is performed on the first test substrate Pt1 (step SB1). The development time of the first test substrate Pt1 is the first time Ta.

  Further, the development process is performed on the second test substrate Pt2 (step SB2). The development time of the second test substrate Pt2 is the second time Tb. The first time Ta and the second time Tb are different. In the present embodiment, the second time Tb is 0.8 times the first time Ta.

  By performing development on the first and second test substrates Pt1 and Pt2, a first pattern of the photosensitive film is formed in the first area AR1, and a second pattern of the photosensitive film is formed in the second area AR2. A third pattern of the photosensitive film is formed in the third area AR3, a fourth pattern of the photosensitive film is formed in the fourth area AR4, and a fifth pattern of the photosensitive film is formed in the fifth area AR5. A sixth pattern of the photosensitive film is formed in the six area AR6. Each of the first to sixth patterns is a line pattern.

  Next, in the present embodiment, the dimensions (bottom width) of the first pattern, the second pattern, the third pattern, the fourth pattern, the fifth pattern, and the sixth pattern are measured. The measurement of the dimension (bottom width) of the pattern is executed using a predetermined measuring device such as SEM.

Size of the first pattern measured by the measuring device is W _1. The dimensions of the second pattern is _{W 2.} The dimensions of the third pattern is _{W 3.} Dimensions of the fourth pattern is _{W 4.} The dimensions of the fifth pattern is _{W 5.} Dimensions of the six patterns are _{W 6.}

Next, based on the first value Ja, the second value Jb, the first time Ta, the second time Tb, the target dimension W _T , and the dimensions W _{1 to} W ₆ of the _first to sixth patterns, the optimum integrated exposure amount. Processing for determining J _OPT and optimum development time T _OPT is executed. In the present embodiment, the first value Ja, the second value Jb, the first time Ta, the second time Tb, the target dimension W _T , and the first to sixth pattern dimensions W _{1 to} W ₆ are used. Thus, the optimum integrated exposure amount J _OPT and the optimum development time T _OPT are determined by calculation.

Hereinafter, an example of a method for determining the optimum integrated exposure amount J _OPT and the optimum development time T _OPT will be described.

  FIG. 18 is a diagram in which a part of the outline (outer shape) of the pattern of the photosensitive film formed on the substrate P is modeled. Each line L1, L1 ′, L2, L2 ′, L3, L3 ′, L4, and L4 ′ shown in FIG. 18 (A) models a part of the contour of the pattern of the photosensitive film in contact with the substrate by a linear expression. Is. In FIG. 18A, the horizontal axis represents the half value of the dimension (line width) of the photosensitive film pattern, and the vertical axis represents the height of the photosensitive film pattern.

In FIG. 18A, lines L4 and L4 ′ are contours of the photosensitive film that have the same bottom width of the photosensitive film pattern even when the exposure conditions and the development conditions are different, as shown in FIG. 18B. Represents part. In the present embodiment, the optimum integrated exposure amount J _OPT and the optimum development time T _OPT for obtaining the line L4 and the line L4 ′ are obtained by calculation described below.

  Line L1 represents the contour of the pattern of the photosensitive film in the ideal state when the exposure and development are performed with the integrated exposure amount Ja and the development time Ta. A line L1 'represents the contour of the pattern of the photosensitive film when the exposure and development are performed with Ja as the integrated exposure amount and Ta as the development time in the joint displacement state. That is, the line L1 represents the contour of the pattern of the photosensitive film formed in the first area AR1 shown in FIG. 16, and the line L1 ′ represents the contour of the pattern of the photosensitive film formed in the second area AR2 shown in FIG. Represents.

  The line L1 is represented by the following formula (1), and the line L1 'is represented by the following formula (2).

y = a ₁ x + b ₁ (1)
y = a ₁ 'x + b ₁ ' (2)

In addition, the coordinates of the intersection of the line L1 and the line L1 ′ are (W _P / 2, h _P ).

  A line L2 represents the contour of the pattern of the photosensitive film when the exposure and development are performed in the ideal state where the integrated exposure amount is Jb and the development time is Ta. A line L2 'represents the outline of the pattern of the photosensitive film when the exposure and development are performed with the integrated exposure amount being Jb and the development time being Ta in the joint displacement state. That is, the line L2 represents the contour of the pattern of the photosensitive film formed in the third area AR3 shown in FIG. 16, and the line L2 ′ represents the contour of the pattern of the photosensitive film formed in the fourth area AR4 shown in FIG. Represents.

  The line L2 is represented by the following formula (3), and the line L2 'is represented by the following formula (4).

y = a ₂ x + b ₂ (3)
y = a ₂ 'x + b ₂ ' (4)

a ₂ , b ₂ , a ₂ ′, b ₂ ′ are proportional to the integrated exposure amount. Equations (3) and (4) can be transformed into the following equations (3) and (4).

y = (a ₁ x + b ₁ ) × (Jb / Ja) (3)
y = (a ₁ ′ x + b ₁ ′) × (Jb / Ja) (4)

The coordinates of the intersection of the line L2 and the line L2 ′ are (W _P / 2, h _P × (Jb / Ja)).

  A line L3 represents the contour of the pattern of the photosensitive film when the exposure and development are performed in the ideal state where the integrated exposure amount is Ja and the development time is Tb. A line L3 'represents the outline of the pattern of the photosensitive film when the exposure and development are performed with the integrated exposure amount Ja and the development time Tb in the joint shift state. That is, the line L3 represents the contour of the photosensitive film pattern formed in the fifth area AR5 shown in FIG. 17, and the line L3 ′ represents the contour of the photosensitive film pattern formed in the sixth area AR6 shown in FIG. Represents.

The line L3 is represented by the following formula (5), and the line L3 ′ is represented by the following formula (6). Here, it is assumed that a ₁ and a ₁ ′ do not change even when the development time changes.

y = a ₁ x + b ₃ (5)
y = a ₁ 'x + b ₃ ' (6)

Let the coordinates of the intersection of the line L3 and the line L3 ′ be (W _Q / 2, h _Q ).

  The line L4 is represented by the following formula (7), and the line L4 'is represented by the following formula (8).

y = a _OPT + b _OPT (7)
y = a _OPT '+ b _OPT ' (8)

The coordinates of the intersection of the line L4 and the line L4 ′ are (W _T / 2, h ₀ ).

The intersection of the lines L1, L1 ′, L2, L2 ′, L3, L3 ′ and y = h ₀ is the half value of the bottom width measured using the measuring device. Therefore, the following equation holds.

_{h 0 = a 1 W 1/} 2 + b 1 ... (9)
h ₀ = a ₁ 'W ₁ ' / 2 + b ₁ '(10)
_{h 0 = a 1 (Jb /} Ja) W 2/2 + b 1 (Jb / Ja) ... (11)
h ₀ = a ₁ ′ (Jb / Ja) W ₂ ′ / 2 + b ₁ ′ (Jb / Ja) (12)
_{h 0 = a 1 W 3/} 2 + b 3 ... (13)
h ₀ = a ₁ 'W ₃ ' / 2 + b ₃ '(14)

  From the equations (9), (10), (13), and (14), the following equations are derived.

_{b 1 = h 0 -a 1 W} 1/2
b ₁ '= h ₀ -a ₁ ' W ₁ '/ 2
_{b 3 = h 0 -a 1 W} 3/2
b ₃ '= h ₀ -a ₁ ' W ₃ '/ 2

  The following formula (15) is derived from the formulas (9) and (11), the following formula (16) is derived from the formulas (10) and (12), and the formulas (9) and (15) are derived. The following equation (17) is derived from the equation, the following equation (18) is derived from the equations (10) and (16), and the following (19) is derived from the equations (13) and (15). The following equation (20) is derived from the equations (14) and (16).

_{a 1 = h 0 × {1-} (Jb / Ja)} / {(Jb / Ja) × (W 2/2-W 1/2)} ... (15)
a ₁ ′ = h ₀ × {1- (Jb / Ja)} / {(Jb / Ja) × (W ₂ ′ / 2−W ₁ ′ / 2)} (16)
b ₁ = _{h 0} × [1- {1- (Jb / Ja) } / {(Jb / Ja) × (W 2/2-W 1/2)} × W 1/2 ] ... (17)
b ₁ ′ = h ₀ × [1- {1- (Jb / Ja)} / {(Jb / Ja) × (W ₂ ′ / 2−W ₁ ′ / 2) × W ₁ ′ / 2} (18 )
b ₃ = _{h 0} × [1- {1- (Jb / Ja) } / {(Jb / Ja) × (W 2/2-W 1/2)} × W 3/2 ] ... (19)
b ₃ ′ = h ₀ × [1- {1- (Jb / Ja)} / {(Jb / Ja) × (W ₂ ′ / 2−W ₁ ′ / 2) × W ₃ ′ / 2} (20 )

Since the line L1 and the line L1 ′ pass through the intersection (W _P / 2, h _P ), the following expressions (21) and (22) are established.

h _P = a ₁ W _P / 2 + b ₁ (21)
h _P = a ₁ 'W _P / 2 + b ₁ ' (22)

  Therefore, the following equations (23) and (24) are derived.

W _P = 2 × (b ₁ ′ −b ₁ ) / (a ₁ −a ₁ ′) (23)
_{h P = (a 1 b 1} '-a 1' b 1) / (a 1 -a 1 ') ... (24)

Since the line L3 and the line L3 ′ pass through the intersection (W _Q / 2, h _Q ), the following expressions (25) and (26) are established.

h _Q = a ₁ W _Q / 2 + b ₃ (25)
h _Q = a ₁ 'W _Q / 2 + b ₃ ' (26)

  Therefore, the following equations (27) and (28) are derived.

W _Q = 2 × (b ₃ ′ −b ₃ ) / (a ₁ −a ₁ ′) (27)
_{h Q = (a 1 b 3} '-a 1' b 3) / (a 1 -a 1 ') ... (28)

On the straight line passing through the point (W _P / 2, h _P ) and the point (W _Q / 2, h _Q ), the half value of the dimension (line width) becomes equal to the half value W _T / 2 of the target dimension W _T If the coordinates of the point are point (W _T / 2, h _R ), point (W _P / 2, h _P ), point (W _Q / 2, h _Q ), point (W _T / 2, h _R ) are Therefore, the following equation (29) is established.

_{(H Q -h P) / (} W Q / 2-W P / 2) = (h R -h P) / (W T / 2-W P / 2) ... (29)

If the equation (29) is rearranged for h _R , the following equation (30) is derived.

_{h R = h P + (W} T -W P) × (h Q -h P) / (W Q -W P) ... (30)

The following equation (31) holds for the optimum integrated exposure amount J _OPT .

J _OPT / Ja = h ₀ / h _R (31)

  The following equation (32) is derived from the equations (30) and (31).

J _OPT = Ja × _{[h 0 / {h P + (} W T -W P) × (h Q -h P) / (W Q -W P)} ] ... (32)

  Substituting (23), (24), (27), and (28) into (32) yields the following (33).

J _OPT = J × h ₀ / [(a ₁ b ₁ ′ −a ₁ ′ b ₁ ) / (a ₁ −a ₁ ′) + {W _T / 2− (b ₁ ′ −b ₁ ) / (a _{1 -a 1 ')} × (a} 1 b 3' -a 1 'b 3 -a 1 b 1' -a 1 'b 1) / (b 3' -b 3 -b 1 '+ b 1) ... (33 )

The following formula (34) holds for the optimum development time T _OPT .
(T _OPT -Ta) / (Tb-Ta) = (W _T / 2-W _P / 2) / (W _Q / 2−W _P / 2) (34)

When the equation (34) is expanded for T _OPT , the following equation (35) is derived.

_{T OPT = Ta + (Tb-} Ta) × (W T -W P) / (W Q -W P) ... (35)

  By substituting the equations (23) and (27) into the equation (35), the following equation (36) is derived.

T _OPT = Ta + (Tb−Ta) × {(a ₁ −a ₁ ′) × W _T− 2− (b ₁ ′ −b ₁ )} / (b ₃ ′ −b ₃ −b ₁ ′ + b ₁ ) (36)

It represents the optimal integrated exposure quantity _{J OPT} (33) formula, and the optimum development time represents the _{T OPT} (36) equation _a 1 ~b ₃ ', and substituting (15) to (20), _{h 0} is To be erased. Thus, the optimum integrated exposure amount J _OPT and the optimum development time T _OPT are derived.

Thus, the process (step SP1) for determining the optimum integrated exposure amount J _OPT and the optimum development time T _OPT using the test substrate Pt (Pt1, Pt2) is completed.

A pattern (device pattern) having a uniform and desired dimension is formed on the substrate P by subjecting the substrate P to main exposure with the determined optimum integrated exposure amount J _OPT and _performing main development with the determined optimum development time T _OPT. The

  As described above, according to the present embodiment, a pattern having a uniform and desired dimension can be formed on the substrate P. Therefore, generation | occurrence | production of a defective device can be suppressed.

  In the above-described embodiment, the first to fourth patterns are formed on the first test substrate Pt1, and the fifth and sixth patterns are formed on the second test substrate Pt2. Each of the first to sixth patterns may be formed on different first to sixth test substrates. For example, the first and second patterns are formed on the first test substrate, and the third and fourth patterns are the first. The fifth and sixth patterns may be formed on the third test substrate.

  In the above-described embodiment, the photosensitive film is a positive type. However, a negative type in which a portion not irradiated with the exposure light EL is removed by development may be used.

In the above-described embodiment, the first projection region PR1 of the first projection optical system PL1 on which the pattern image of the mask M is projected and the second projection optical system PL2 on which the pattern image of the mask M is projected. The substrate P is subjected to overlap exposure with a part of the second projection region PR2, and the substrate P is disposed in the first projection region PR1 and the second projection region PR2, so that the first projection region PR1 and the second projection region PR2 are exposed. The case where the exposure light EL is irradiated has been described as an example. Then, the optimum integrated exposure amount J _OPT is applied to the dimension of the pattern formed on the substrate P by the exposure light EL irradiated to the non-overlapping portion A1 of the first projection region PR1, and to the non-overlapping portion A2 of the second projection region PR2. The dimension of the pattern formed on the substrate P by the irradiated exposure light EL and the pattern formed on the substrate P by the exposure light EL irradiated to the overlapping portion B1 between the first projection region PR1 and the second projection region PR2. an integrated exposure amount in the first projection region PR1 and the second projection region PR2 where the dimensions substantially coincide, the optimum developing time T _OPT is in development time dimension of the pattern formed on the substrate P becomes the target value W _T It was supposed to be.

  According to the pattern formation method of this embodiment, the mask M and the substrate P (that is, the mask stage 1 and the substrate stage 2) are moved synchronously in a predetermined scanning direction, and the pattern image of the mask M is transferred to the substrate P. In the scanning exposure to be projected onto the projection surface, relative vibration between the projection optical system and the substrate P (that is, relative vibration between the projection region and the substrate P), and relative vibration between the projection optical system and the mask M (that is, illumination region and mask M). The pattern can be made uniform even when overlapping exposure is caused by the relative vibration of at least one of the relative vibrations in the same manner as in the joint displacement state. Here, the relative vibration means that the relative position between the projection optical system and the substrate P or the mask M is a component different from the intended synchronous movement, and the surface of the substrate P (photosensitive surface) or the surface of the mask M (pattern surface). ) In the direction along).

  As the substrate P in the above-described embodiment, not only a glass substrate for a display device but also a semiconductor wafer for manufacturing a semiconductor device, a ceramic wafer for a thin film magnetic head, or an original mask (reticle) used in an exposure apparatus ( Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the substrate P with the exposure light EL through the pattern of the mask M by moving the mask M and the substrate P synchronously. In addition, the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary, and is applied to a step-and-repeat type projection exposure apparatus (stepper) that sequentially moves the substrate P stepwise. Can do.

  The present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.

  Further, the present invention relates to a substrate stage for holding a substrate as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., and a reference mark without holding the substrate. The present invention can also be applied to an exposure apparatus that includes a formed reference member and / or a measurement stage on which various photoelectric sensors are mounted. An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display element or a display, but an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate P, a thin film magnetic head, an image sensor (CCD) It can also be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask, or the like.

  In each of the above-described embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale (diffraction grating) provided in each stage You may use the encoder system which detects this.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in US Pat. No. 6,778,257, a variable shaped mask (also called an electronic mask, an active mask, or an image generator) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. ) May be used. Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.

  The exposure apparatus EX of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. After the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 19, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. In step 203, the substrate processing includes exposing the substrate with the exposure light from the mask to project an image of the pattern onto the substrate and developing the exposed substrate (photosensitive film) according to the above-described embodiment. The substrate is manufactured through a substrate processing step 204 including an exposure process, a device assembly step (including processing processes such as a dicing process, a bonding process, and a package process) 205, an inspection step 206, and the like. Step 204 includes developing the photosensitive film to form an exposure pattern layer (development of the developed photosensitive film) corresponding to the mask pattern, and processing the substrate through the exposure pattern layer. It is. For example, processing the substrate includes etching the developed substrate.

  Note that the requirements of the above-described embodiments and modifications can be combined as appropriate. Some components may not be used. In addition, as long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

  In the above-described embodiment, the present invention has been described as being applied to the exposure apparatus. However, the present invention is not limited to the exposure apparatus, and for example, a plurality of processing regions provided on the substrate P are sequentially used with a microscope or the like. The present invention can also be applied to an inspection apparatus that observes and inspects.

  DESCRIPTION OF SYMBOLS 1 ... Mask stage, 2 ... Substrate stage, 4 ... Control apparatus, M ... Mask, P ... Substrate, Pt ... Test substrate, PL1-PL7 ... Projection optical system, PR1-PR7 ... Projection area

Claims (12)

A pattern forming method for forming a pattern on a photosensitive substrate,
Of the plurality of regions provided on at least one first substrate, each of the first group of regions is exposed with the exposure light under different exposure conditions, and each of the second group of regions is exposed under substantially the same exposure conditions. Performing a first exposure for exposure with the exposure light;
Of the plurality of regions exposed by the first exposure, the first group of regions is developed under substantially the same development conditions, and the first and second portions of the second group of regions are developed differently. Performing a first development that develops under conditions;
Determining a first exposure condition and a first development condition corresponding to a predetermined pattern based on a development result of the first development;
Exposing a second substrate different from the first substrate with the exposure light under the first exposure condition and developing under the first development condition to form the predetermined pattern on the second substrate;
A pattern forming method including: The first exposure is
Exposing the first region of the plurality of regions with the exposure light irradiated in a predetermined irradiation region such that the integrated exposure amount becomes a first value;
Of the plurality of regions, the second region and the predetermined irradiation region are irradiated with the exposure light irradiated in the predetermined irradiation region so that the integrated exposure amount becomes the first value. And overlapping exposure with different relative positions,
Exposing a third region of the plurality of regions with the exposure light irradiated in the predetermined irradiation region such that an integrated exposure amount is a second value different from the first value;
Of the plurality of regions, the fourth region and the predetermined irradiation region are irradiated with the exposure light irradiated in the predetermined irradiation region so that the integrated exposure amount becomes the second value. And overlapping exposure with different relative positions,
Exposing a fifth region of the plurality of regions with the exposure light irradiated in the predetermined irradiation region such that an integrated exposure amount becomes the first value;
The sixth region and the predetermined irradiation region of the sixth region of the plurality of regions are irradiated with the exposure light irradiated in the predetermined irradiation region so that an integrated exposure amount becomes the first value. And overlapping exposure with different relative positions,
Including
The first development includes
Developing each of the first to fourth regions in a first time;
Developing each of the fifth and sixth regions in a second time different from the first time;
including,
The pattern forming method according to claim 1. A pattern forming method for forming a pattern on a photosensitive substrate,
First exposing a first photosensitive substrate with exposure light applied to a projection area of the projection optical system under each of a plurality of different exposure conditions;
First developing the first photosensitive substrate exposed to the first under each of a plurality of different development conditions;
Determining an exposure condition and a development condition corresponding to a predetermined pattern based on a pattern formed on the substrate by the first exposure and the first development;
A second exposure of the second photosensitive substrate with exposure light applied to the projection area under exposure conditions corresponding to the predetermined pattern;
Second developing the second photosensitive substrate exposed to the second under development conditions corresponding to the predetermined pattern;
A pattern forming method including: The first exposure includes
Exposing the first substrate with exposure light applied to the projection area so that the integrated exposure amount in the projection area becomes a first value;
Overlapping exposure of the second substrate with the exposure light applied to the projection area at each of a plurality of different positions with respect to the projection area so that the integrated exposure amount becomes the first value;
Exposing the third substrate with exposure light applied to the projection area such that an integrated exposure amount in the projection area becomes a second value different from the first value;
Overlapping exposure of the fourth substrate with exposure light applied to the projection area at each of a plurality of different positions with respect to the projection area, so that the integrated exposure amount becomes the second value;
Exposing the fifth substrate with exposure light applied to the projection region such that the integrated exposure amount in the projection region becomes the first value;
Overlapping exposure of the sixth substrate with exposure light applied to the projection area at each of a plurality of different positions with respect to the projection area so that the integrated exposure amount becomes the first value;
Including
The first development includes
Developing the first substrate in a first time to form a first pattern on the first substrate;
Developing the second substrate in the first time to form a second pattern on the second substrate;
Developing the third substrate in the first time to form a third pattern on the third substrate;
Developing the fourth substrate in the first time to form a fourth pattern on the fourth substrate;
Developing the fifth substrate at a second time different from the first time to form a fifth pattern on the fifth substrate;
Developing the sixth substrate in the second time to form a sixth pattern on the sixth substrate;
including,
The pattern formation method of Claim 3. The exposure of the first, third and fifth substrates is as follows:
In a state where the positions of the first, third, and fifth substrates with respect to the projection area are fixed, overlapping exposure so that an integrated exposure amount in the projection area becomes the first value;
The pattern formation method of Claim 4 containing this. The exposure of the second and sixth substrates is as follows:
The exposure light is applied to the projection area so that the exposure amount in the projection area is 1 / H of the first value, and the second and sixth substrates arranged in the projection area are used as the projection area. Multiple exposures at different positions for H times,
The pattern formation method of Claim 4 or 5 containing these. The exposure of the fourth substrate is
The exposure light is applied to the projection area so that an exposure amount in the projection area becomes 1 / K of the second value, and the fourth substrate disposed in the projection area differs from the projection area. Performing K exposures at each of a plurality of positions,
The pattern formation method as described in any one of Claims 4-6 containing these. Measuring the dimensions of the first pattern, the second pattern, the third pattern, the fourth pattern, the fifth pattern, and the sixth pattern;
Determination of exposure conditions and development conditions corresponding to the predetermined pattern,
The method according to any one of claims 4 to 7, which is executed based on a measurement result of the dimension of the predetermined pattern, the first value, the second value, the first time, the second time, and the dimension. Pattern formation method.   9. At least two of the first substrate, the second substrate, the third substrate, the fourth substrate, the fifth substrate, and the sixth substrate are the same substrate. The pattern forming method according to one item. The exposure of the substrate is
Including overlapping exposure by the first projection area of the first projection optical system on which the first image is projected and a part of the second projection area of the second projection optical system on which the second image is projected,
With the substrate disposed in the first projection area and the second projection area, the exposure light is irradiated to the first projection area and the second projection area,
The exposure conditions corresponding to the predetermined pattern are:
A dimension of a pattern formed on the substrate by the exposure light irradiated on the first projection area; a dimension of a pattern formed on the substrate by the exposure light irradiated on the second projection area; An exposure amount in the first projection area and the second projection area where the dimension of the pattern formed on the substrate by the exposure light applied to the overlapping portion of the one projection area and the second projection area substantially coincides with each other. The pattern formation method as described in any one of Claims 3-9 containing. The development conditions corresponding to the predetermined pattern are:
The pattern forming method according to claim 3, comprising a development time in which a dimension of the predetermined pattern formed on the substrate is a target value. Forming a pattern on a substrate using the pattern forming method according to claim 1;
Processing the substrate on which the pattern is formed;
A device manufacturing method including:

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