TWI811489B - 晶圓製造裝置 - Google Patents
晶圓製造裝置 Download PDFInfo
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- TWI811489B TWI811489B TW108142888A TW108142888A TWI811489B TW I811489 B TWI811489 B TW I811489B TW 108142888 A TW108142888 A TW 108142888A TW 108142888 A TW108142888 A TW 108142888A TW I811489 B TWI811489 B TW I811489B
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- wafer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 230000001681 protective effect Effects 0.000 claims abstract description 105
- 238000000227 grinding Methods 0.000 claims abstract description 93
- 235000012431 wafers Nutrition 0.000 claims description 253
- 238000004140 cleaning Methods 0.000 claims description 59
- 230000032258 transport Effects 0.000 claims description 31
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 230000007723 transport mechanism Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 239000004575 stone Substances 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 239000007788 liquid Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Mechanical Engineering (AREA)
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- Chemical & Material Sciences (AREA)
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- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
[課題]減少晶圓的製造步驟中操作員的作業工時。[解決手段]在晶圓製造裝置1中,藉由第1搬送機械臂21、交接卡匣部5及第2搬送機械臂31,可將具備保護構件的晶圓從保護構件形成裝置2搬送至研削裝置3。進而,藉由剝離裝置4的保持手段,可將正面被研削並在背面具備保護構件的晶圓從研削裝置3搬送至剝離裝置4。並且,藉由該保持手段,可將剝離了保護構件的晶圓從剝離裝置4搬送至研削裝置3。因此,在保護構件形成裝置2與研削裝置3之間及研削裝置3與剝離裝置4之間的晶圓搬送,不須要操作員介入。這個結果,可減少晶圓的製造步驟中操作員的作業工時。
Description
本發明是關於一種晶圓製造裝置。
由電子零件的材料所構成的半導體晶圓是例如以下述般被製造。首先,藉由將圓柱狀的晶棒以線鋸切片,製作切片晶圓。對這個晶圓研削或實施蝕刻,藉此除去捲曲和翹曲。
為了藉由研削而除去捲曲和翹曲,會在晶圓的其中一面的整面形成包含樹脂層的保護構件(例如專利文獻1)。保護構件形成後,透過保護構件藉由卡盤台保持晶圓,並藉由研削磨石研削晶圓的另一面。研削後,從晶圓的其中一面剝離保護構件,反轉晶圓,藉由卡盤台保持晶圓的另一面,並研削晶圓的其中一面。藉此,製造預定的厚度的晶圓。
[習知技術文獻]
[專利文獻]
[專利文獻1]日本特開2009-148866號公報。
[發明所欲解決的課題]
在如上述的晶圓的製造步驟中,會使用:在晶圓形成保護構件的保護構件形成裝置、研削晶圓的研削裝置、及剝離保護構件的剝離裝置。因為使用該些裝置製造晶圓,晶圓在各裝置間被搬送。因此,在各裝置的卡匣收納晶圓,而操作員將卡匣運至各裝置。因此,會有操作員的作業工時長的問題。
本發明的目的為減少晶圓的製造步驟中操作員的作業工時。
[解決課題的技術手段]
本發明的晶圓製造裝置(本晶圓製造裝置)是一種從包含變形要素的晶圓除去該變形要素來製造預定的厚度的晶圓之晶圓製造裝置,其具備:保護構件形成裝置,在晶圓的其中一面的整面形成保護構件;研削裝置,藉由研削磨石研削卡盤台所保持的該晶圓;剝離裝置,從該晶圓剝離該保護構件;第1搬送機構,將具備該保護構件的該晶圓從該保護構件形成裝置搬送至該研削裝置;第2搬送機構,將具備該保護構件的該晶圓從該研削裝置搬送至該剝離裝置;以及第3搬送機構,將剝離了該保護構件的該晶圓從該剝離裝置搬送至該研削裝置。
本晶圓製造裝置可進一步包含:外周清洗裝置,清洗剝離了該保護構件的該晶圓的外周部分。
在本晶圓製造裝置中,可以在X方向排列之方式配置有該保護構件形成裝置、該研削裝置、及該剝離裝置。
在本晶圓製造裝置中,該第1搬送機構可具備:交接卡匣,配設在該保護構件形成裝置與該研削裝置之間,將該晶圓層架狀收納;卡匣台座,載置有該交接卡匣;第1搬送機械臂,配設在該保護構件形成裝置,將具備該保護構件的該晶圓收納於該交接卡匣;第2搬送機械臂,配設在該研削裝置,將具備該保護構件的該晶圓從該交接卡匣取出。
在本晶圓製造裝置中,該研削裝置包含旋轉清洗單元;該旋轉清洗單元可具備:保持該晶圓的旋轉台、對該晶圓噴灑清洗水的清洗噴嘴、以及使該旋轉台旋轉的旋轉手段;該第2搬送機構可從該旋轉台將該晶圓搬送至該剝離裝置。
[發明功效]
在本晶圓製造裝置中,在保護構件形成裝置與研削裝置之間的晶圓搬送使用第1搬送機構,並且一同在研削裝置與剝離裝置之間的晶圓搬送使用第2搬送機構。因此,這些的裝置間的晶圓搬送不必有操作員的介入。這個結果,可減少晶圓的製造步驟中操作員的作業工時。
再者,本晶圓製造裝置可包含上述的外周清洗裝置,進而,亦可包含在剝離裝置與外周清洗裝置之間搬送晶圓的搬送機構。藉此,在剝離裝置與外周清洗裝置之間晶圓搬送,因為不必有操作員的介入,故可進一步減少作業員的作業工時。
另外,在本晶圓製造裝置中,以在X方向排列之方式配置有保護構件形成裝置、研削裝置、及剝離裝置,則因為晶圓的搬送方向單純化而可藉由第1~第3搬送機構將晶圓搬送簡單化。
另外,在本晶圓製造裝置中第1搬送機構具備:上述的交接卡匣、卡匣台座、第1搬送機械臂及第2搬送機械臂,藉此可將藉由第1搬送機構將晶圓搬送簡單化。
另外,在本晶圓製造裝置中,研削裝置含有上述的旋轉清洗單元,第2搬送機構可從旋轉台將晶圓搬送至剝離裝置。在這個構成中,因為可在將保護構件剝離前清洗晶圓,故可藉由剝離裝置適當實施保護構件的剝離。
圖1所示的晶圓製造裝置1是從包含開始捲曲、翹曲等變形要素的晶圓除去變形要素來製造預定的厚度的晶圓。該晶圓製造裝置1具備:在晶圓形成保護構件的保護構件形成裝置2、研削晶圓的研削裝置3、及從晶圓剝離保護構件的剝離裝置4。以在X方向排列之方式配置有保護構件形成裝置2、研削裝置3、及剝離裝置4。
進而,晶圓製造裝置1具備交接卡匣部5,用來將晶圓從保護構件形成裝置2搬送至研削裝置3。交接卡匣部5配置在保護構件形成裝置2與研削裝置3之間。
圖2所示之晶圓W是藉由未圖示的線鋸機從晶棒切出的切片晶圓。晶圓W是例如形成為圓形狀,具有正面Wa及背面Wb。
晶圓W的背面Wb及正面Wa是分別相當於晶圓W的其中一面及另一面的一例。
圖1所示之保護構件形成裝置2是在晶圓W的背面Wb的整面形成包含樹脂層的保護構件。保護構件形成裝置2具有第1搬送機械臂21,第1搬送機械臂21將具備保護構件的晶圓W收納於交接卡匣5。
交接卡匣5如圖3所示,具有:將晶圓W以層架狀收納的交接卡匣51、及載置有交接卡匣51的卡匣台座52。交接卡匣51具備用來收納晶圓W的多個層架511。層架511是以將交接卡匣51從保護構件形成裝置2側貫穿至研削裝置3側之方式設置,用來將晶圓W相對於層架511取出或放入,具備:保護構件形成裝置2側的第1開口512、及研削裝置3側的第2開口513。
圖1所示的保護構件形成裝置2的第1搬送機械臂21透過第1開口512,將具備保護構件的晶圓W收納於交接卡匣51的層架511。
研削裝置3研削晶圓W的正面Wa及背面Wb。研削裝置3具有第2搬送機械臂31。第2搬送機械臂31從圖3所示的交接卡匣51的層架511透過第2開口513取出具備保護構件的晶圓W,載置於研削裝置3的預定位置。研削裝置3具有殼體300,在其Y側的前表面設有容納兩面被研削的晶圓W之裝載埠LP。
在本實施方式中,交接卡匣51、卡匣台座52、第1搬送機械臂21及第2搬送機械臂31是相當於將具備保護構件的晶圓W從保護構件形成裝置2搬送至研削裝置3之第1搬送機構的一例。
剝離裝置4是藉由研削裝置3取得被研削的晶圓W,從晶圓W剝離保護構件。使剝離了保護構件的晶圓W回到研削裝置3。
以下說明晶圓製造裝置1的動作。
在晶圓製造裝置1中,首先,保護構件形成裝置2是在晶圓W的背面Wb的整面形成包含樹脂層的保護構件。
如圖4所示,在具有殼體200的保護構件形成裝置2中,首先,第1搬送機械臂21從容納切片晶圓的晶圓W之卡匣23a取出1片晶圓W,搬送至第1支撐台26a。晶圓檢測部27檢測晶圓W的中心位置及方向。之後,晶圓搬送部25從第1支撐台26a搬出晶圓W,交接至保持手段250。在保持手段250,保持台252吸附保持晶圓W的正面Wa。
薄片載置手段230的夾具部232將由使紫外線穿透的透明材料所組成的薄片F夾持,並與往晶圓W的保持手段250的搬送方向平行地在Y軸方向移動,藉此將薄片F從滾筒部211拉出。薄片F吸附保持於玻璃製的台座220的薄片保持面221。
之後,樹脂供給手段240藉由使樹脂供給噴嘴241旋轉,將樹脂供給噴嘴241的供給口243定位於台座220的上方。接著,分配器242容納於樹脂槽(未圖示),吸取例如由紫外線硬化樹脂所組成的液狀樹脂(未圖示),並送出至樹脂供給噴嘴241。藉此,從樹脂供給噴嘴241朝向吸附保持於台座220的薄片F滴下預定量的液狀樹脂。
擴張手段260是藉由昇降板264將保持手段250的支撐構造251保持。擴張手段260藉由馬達262使滾珠螺桿261旋轉,藉此與昇降板264一同使保持手段250下降。伴隨保持手段250的下降,被吸附保持的晶圓W的背面Wb將吸附保持於台座220的薄片F上的液狀樹脂,以具有預定厚度之方式推開。
之後,硬化手段270朝向藉由晶圓W的背面Wb被推開的液狀樹脂,透過台座220照射紫外光。其結果,液狀樹脂硬化,在晶圓W的背面Wb形成由液狀樹脂所組成的預定厚度的樹脂層。
之後,晶圓W藉由晶圓搬送部25搬送至第2支撐台26b,藉由薄片切斷器28沿著晶圓W的外形使多餘的薄片F切斷。此時,薄片F的直徑至少大於晶圓W的直徑。
如此,如圖5所示,在晶圓W的背面Wb的整面形成包含樹脂層R及薄片F的保護構件P。保護構件P形成後,第1搬送機械臂21將具備保護構件P的晶圓W以正面Wa朝向上之方式,透過第1開口512容納於交接卡匣51。
藉由保護構件形成裝置2形成保護構件P後,研削裝置3研削晶圓W的正面Wa。
在如圖6所示的研削裝置3中,首先,第2搬送機械臂31將具備交接卡匣部5內的保護構件P的晶圓W,透過第2開口513取出。第2搬送機械臂31將晶圓W以正面Wa朝向上之方式載置於暫置台32。並且,第1搬送手段313a將晶圓W的正面Wa吸附保持,並搬送至定位於搬出入區域A的卡盤台302。卡盤台302吸附保持在晶圓W的背面Wb形成的保護構件P。藉此,在露出正面Wa的狀態下,晶圓W保持於卡盤台302。
接著,保持晶圓W的卡盤台302從搬出入區域A到在加工區域B內設置的研削手段303的研削輪334的下方移動。並且,使卡盤台302旋轉,並一同使具有研削磨石340的研削輪334旋轉。進而,研削進給手段306將研削手段303運送至下方,藉此,旋轉的研削磨石340接觸晶圓W的正面Wa,研削正面Wa。當晶圓W被研削至預定的厚度時,則研削進給手段306使研削手段303上升,並結束研削。
研削結束後,卡盤台302移動至搬出入區域A,第2搬送手段313b吸附保持晶圓W的正面Wa,將晶圓W搬送至旋轉清洗單元350。
旋轉清洗單元350具有:配在中央的旋轉台352、從旋轉台352在徑方向延伸的4個邊緣夾具351、使旋轉台352及邊緣夾具351旋轉的旋轉手段354、以及將Z軸方向作為旋轉軸而可旋轉的清洗噴嘴353。4個邊緣夾具351是以例如大致90度的角度間隔安裝於旋轉台352。
在晶圓W的正面Wa的研削後的清洗,旋轉台352吸附保持由第2搬送手段313b所搬送的晶圓W的背面Wb。之後,旋轉手段354使旋轉台352高速旋轉,藉此晶圓W會高速旋轉。並且,從清洗噴嘴353朝向晶圓W的正面Wa噴射清洗水,使正面Wa清洗。
使清洗水的噴射停止後,藉由旋轉手段354維持晶圓W的高速旋轉,藉此使晶圓W乾燥。此時,亦可從未圖示的空氣用噴嘴向晶圓W噴射高壓空氣。乾燥結束後,解除旋轉台352對晶圓W的吸附,成為僅將晶圓W載置於旋轉台352的狀態。使該晶圓W被搬送至剝離裝置4。
如圖7所示,剝離裝置4保持晶圓W,並具備用來搬送的保持手段42。保持手段42具備:吸附保持晶圓W的保持墊421、支撐保持墊421的臂部420、支撐臂部420並在Z軸方向來回移動的Z軸方向移動手段413、支撐Z軸方向移動手段413的可動板429、及使可動板429在X軸方向來回移動的X軸方向移動手段412。
保持手段42是相當於第2搬送機構及第3搬送裝置的一例,其中第2搬送機構將具備保護構件P的晶圓W從研削裝置3搬送至剝離裝置4,第3搬送裝置則將剝離了保護構件P的晶圓W從剝離裝置4搬送至研削裝置3。
在剝離裝置4中,首先,保持手段42的保持墊421藉由X軸方向移動手段412及Z軸方向移動手段413,移動至相鄰剝離裝置4的圖6所示之研削裝置3的旋轉清洗單元350。並且,保持墊421將載置於旋轉清洗單元350的晶圓W的正面Wa吸附保持。
之後,保持手段42以正面Wa為上側之方式,將晶圓W載置於保持台441上。保持台441吸附保持晶圓W,以Z軸方向作為旋轉軸而可旋轉。並且,保持台441及外側部分剝離手段443在多處(例如8處)從晶圓W的背面Wb僅剝離圖5所示之晶圓W的保護構件P的外側部分。此剝離後,解除保持台441對晶圓W的吸附。
接著,保持手段42將保持台441上的晶圓W藉由保持墊421吸附,搬送至晶圓W的整體剝離手段43的上方的位置,並固定在此位置。
整體剝離手段43包含:把持部431,以及使把持部431沿著X軸方向移動的移動構件432。把持部431把持在晶圓W的保護構件P 之-X側被剝離的外側部分。在這狀態下,移動構件432使把持部431在+X側移動。因為晶圓W的位置被固定,藉由把持保護構件P的把持部431的移動,如圖8所示,從晶圓W的背面Wb使保護構件P剝離。被剝離的保護構件P落下於圖7所示的盒體479。
另外,剝離裝置4具備用來清洗晶圓W的外周部分之外周清洗裝置6。保持手段42將剝離了保護構件P的晶圓W搬送至外周清洗裝置6。
如圖9(a)所示,保持手段42將藉由保持墊421吸附保持的晶圓W以正面Wa朝向上之方式,載置於外周清洗裝置6的保持台63上。保持台63吸附保持晶圓W的背面Wb。
保持台63被支撐於沿著導軌65可移動的可動塊體64。導軌65的+X側的端部配有清洗盒體67。另外,導軌65是藉由設在-X側的端部之傾斜手段66,構成為可在箭頭C方向傾斜。
保持台63保持晶圓W後,支撐保持台63之可動塊體64沿著導軌65在+X方向移動。這個結果如圖9(b)所示,晶圓W的外周部分會通過設在清洗盒體67之晶圓進入口671,被上下一對的海綿672夾持。這種狀態下,保持台63會旋轉並且同時從清洗水噴嘴673相對於海綿672噴出水。藉此,晶圓W的外周部分藉由海綿672清洗。
從清洗水噴嘴673供給並在海綿672吸收的清洗水,是從海綿672滲出落下並滯留在清洗盒體67內。為了排出此水,傾斜手段66如圖9(c)所示,使導軌65在清洗盒體67下降的方向上傾斜。這種結果,清洗盒體67所滯留的清洗水從設在清洗盒體67的+X方向側之排水口674被排出。另外,充滿於清洗盒體67的清洗水的水蒸氣藉由設在清洗盒體67的+X方向側之氣液分離裝置675,被分離為氣體和水。被分離的水從排水口674被排出,氣體從排氣口676被排出。
晶圓W的外周部分的清洗結束後,導軌65回到水平,並且可動塊體64以晶圓W的整體從清洗盒體67移出之方式在-X方向移動。之後,解除保持台63對晶圓W的吸附,圖7所示的剝離裝置4的保持手段42是藉由保持墊421吸附保持在保持台63上的晶圓W。並且,保持手段42將晶圓W搬送至圖6所示之研削裝置3,並在該旋轉清洗單元350的旋轉台352,以正面Wa朝向上之方式載置晶圓W。
當在旋轉台352載置晶圓W時,第2搬送機械臂31將旋轉台352上的晶圓W吸附保持,反轉,並以背面Wb朝向上之方式將晶圓W載置於暫置台32。
再者,亦可為:第2搬送機械臂31在旋轉台352的上方待機,剝離裝置4的保持手段42將晶圓W交接至第2搬送機械臂31,吸引保持,反轉,並以背面Wb朝向上之方式將晶圓W載置於暫置台32。
之後,第1搬送手段313a將晶圓W的背面Wb吸附保持,並搬送至定位於搬出入區域A的卡盤台302。卡盤台302以露出晶圓W的背面Wb之方式將晶圓W的正面Wa吸附保持。
接著,保持晶圓W的卡盤台302在研削輪334的下方移動,使卡盤台302及研削輪334旋轉並一同使包含研削輪334的研削手段303下降。藉此,與研削輪334一同旋轉的研削磨石340接觸晶圓W的背面Wb,使背面Wb被研削。當晶圓W研削至預定的厚度時結束研削。
研削結束後,卡盤台302移動至搬出入區域A,解除晶圓W的吸附。並且,第2搬送手段313b吸附保持晶圓W的背面Wb,將晶圓W搬送至旋轉清洗單元350。
在晶圓W的背面Wb的研削後的清洗中,4個邊緣夾具351把持晶圓W的外周部分。之後,旋轉手段354使旋轉台352高速旋轉。藉此,安裝於旋轉台352的邊緣夾具351、及把持於邊緣夾具351的晶圓W亦高速旋轉。並且,從清洗噴嘴353朝向晶圓W的背面Wb噴射清洗水,並一同從旋轉台352的中央朝向晶圓W的正面Wa,向上噴射清洗水。藉此,一同清洗晶圓W的正面Wa及背面Wb。
使清洗水的噴射停止後,藉由旋轉手段354維持晶圓W的高速旋轉,藉此使晶圓W乾燥。乾燥結束後,藉由邊緣夾具351使晶圓W的把持解除,成為僅將晶圓W載置於旋轉台352的狀態。第2搬送機械臂31保持此晶圓,並容納於圖1所示的裝載埠LP。如此,使晶圓W的正面Wa及背面Wb的兩面研削,除去開始捲曲及翹曲等變形要素,獲得具有預定厚度的晶圓W。
如以上所述,在晶圓製造裝置1中,藉由第1搬送機械臂21、交接卡匣部5及第2搬送機械臂31,可將具備保護構件P的晶圓W從保護構件形成裝置2搬送至研削裝置3。進而,藉由剝離裝置4的保持手段42,可將正面Wa被研削並在背面Wb具備保護構件P的晶圓W從研削裝置3搬送至剝離裝置4。並且,藉由保持手段42,可將剝離了保護構件P的晶圓W從剝離裝置4搬送至研削裝置3。
如此,在晶圓製造裝置1中,在保護構件形成裝置2與研削裝置3之間、及研削裝置3與剝離裝置4之間的晶圓W搬送,不必有操作員的介入。此結果,可減少晶圓W的製造步驟中操作員的作業工時。
另外,在晶圓製造裝置1中,剝離裝置4包含外周清洗裝置6,進而,保持手段42在剝離裝置4與外周清洗裝置6之間搬送晶圓W。藉此,在剝離裝置4與外周清洗裝置6之間的晶圓W的搬送,因為不必有操作員的介入,故可進一步減少作業員的作業工時。
另外,在本晶圓製造裝置1中,以在X方向排列之方式配置有保護構件形成裝置2、研削裝置3、及剝離裝置4,故晶圓的搬送方向單純化。因此,可將晶圓W搬送簡單化。
另外,在本晶圓製造裝置1中,研削裝置3含有旋轉清洗單元350,且保持手段42從旋轉台352將晶圓W搬送至剝離裝置4。因此,因為可在將保護構件P剝離前清洗晶圓W,故可藉由剝離裝置4適當實施保護構件P的剝離。
再者,在本實施方式中,如圖3所示,交接卡匣部5的交接卡匣51具備:保護構件形成裝置2側的第1開口512、及研削裝置3側的第2開口513,第1搬送機械臂21及第2搬送機械臂31透過該些開口相對於層架511將晶圓W送出搬入。
晶圓製造裝置1可具備圖10所示的交接卡匣部5a及控制手段7來代替這種交接卡匣部5。交接卡匣部5a在交接卡匣部5的構成中,在交接卡匣51及卡匣台座52之間具備使交接卡匣51繞Z軸周圍旋轉的旋轉器53。控制手段7控制旋轉器53,使交接卡匣51旋轉。
在此構成中,因為交接卡匣51可旋轉,可將第1開口512或第2開口513朝向Y側。藉此,操作員無須透過保護構件形成裝置2或研削裝置3,亦可從交接卡匣部5的正表面(Y側)直接將晶圓W拔出。這種結果,舉例而言,操作員在保護構件形成裝置2或研削裝置3故障的情況,無須進入這些的裝置內,而可安全回收晶圓W。
另外,操作員確認在保護構件形成裝置2形成之保護構件P的狀態後,能夠放回交接卡匣51,往研削裝置3搬送並進行研削加工。如此形成之保護構件P的確認,是在將供給液狀樹脂的液狀樹脂槽交換時等所進行,在液狀樹脂槽的交換後直接確認形成的保護構件P是否有氣泡進入,若有氣泡進入的話則不可回到交接卡匣51,故可防止研削不良。
1:晶圓製造裝置
2:保護構件形成裝置21:第1搬送機械臂23a:卡匣
25:晶圓搬送部28:薄片切斷器200:殼體
220:台座
241:樹脂供給噴嘴250:保持手段251:支撐構造
252:保持台260:擴張手段270:硬化手段
3:研削裝置31:第2搬送機械臂32:暫置台
302:卡盤台340:研削磨石
350:旋轉清洗單元351:邊緣夾具
352:旋轉台353:清洗噴嘴354:旋轉手段
4:剝離裝置42:保持手段479:盒體
412:X軸方向移動手段413:Z軸方向移動手段420:臂部
421:保持墊429:可動板
43:整體剝離手段431:把持部432:移動構件
441:保持台443:外側部分剝離手段
5、5a:交接卡匣部51:交接卡匣52:卡匣台座
53:旋轉器511:層架512:第1開口
513:第2開口
6:外周清洗裝置63:保持台64:可動塊體
65:導軌66:傾斜手段67:清洗盒體
671:晶圓進入口672:海綿673:清洗噴嘴
674:排水口675:氣液分離裝置676:排氣口
7:控制手段
W:晶圓Wa:正面Wb:背面
P:保護構件R:樹脂層F:薄片
圖1係表示實施方式的晶圓製造裝置之說明圖。
圖2係表示晶圓之說明圖。
圖3係表示在晶圓製造裝置所具備的交接卡匣之立體圖。
圖4係表示晶圓製造裝置的保護構件形成裝置的構成之立體圖。
圖5係具備保護構件的晶圓之剖面圖
圖6係表示晶圓製造裝置的研削裝置的構成之立體圖。
圖7係表示晶圓製造裝置的剝離裝置的構成之立體圖。
圖8係表示從晶圓剝離保護構件的樣子之說明圖。
圖9(a)~(c)係表示具備剝離裝置的外周清洗裝置之說明圖。
圖10係表示其他實施方式的晶圓製造裝置之說明圖。
1:晶圓製造裝置
2:保護構件形成裝置
21:第1搬送機械臂
200:殼體
3:研削裝置
31:第2搬送機械臂
300:殼體
4:剝離裝置
5:交接卡匣部
LF:裝載埠
Claims (4)
- 一種晶圓製造裝置,從包含變形要素的晶圓除去該變形要素,製造預定厚度的晶圓,該晶圓製造裝置具備:保護構件形成裝置,在晶圓的其中一面的整面形成保護構件;研削裝置,藉由研削磨石研削卡盤台所保持的該晶圓;剝離裝置,從該晶圓剝離該保護構件;第1搬送機構,將具備該保護構件的該晶圓從該保護構件形成裝置搬送至該研削裝置;第2搬送機構,將具備該保護構件的該晶圓從該研削裝置搬送至該剝離裝置;以及第3搬送機構,將剝離了該保護構件的該晶圓從該剝離裝置搬送至該研削裝置,其中,進一步包含:外周清洗裝置,清洗剝離了該保護構件的該晶圓的外周部分。
- 一種晶圓製造裝置,從包含變形要素的晶圓除去該變形要素,製造預定厚度的晶圓,該晶圓製造裝置具備:保護構件形成裝置,在晶圓的其中一面的整面形成保護構件;研削裝置,藉由研削磨石研削卡盤台所保持的該晶圓;剝離裝置,從該晶圓剝離該保護構件;第1搬送機構,將具備該保護構件的該晶圓從該保護構件形成裝置搬送至該研削裝置;第2搬送機構,將具備該保護構件的該晶圓從該研削裝置搬送至該剝離裝置;以及第3搬送機構,將剝離了該保護構件的該晶圓從該剝離裝置搬送至該研削裝置,其中,以在X方向排列之方式配置有該保護構件形成裝置、該研削裝置、及該剝離裝置。
- 如申請專利範圍第1或2項所載之晶圓製造裝置,其中,該第1搬送機構具備: 交接卡匣,配設在該保護構件形成裝置與該研削裝置之間,將該晶圓以層架狀來收納;卡匣台座,載置有該交接卡匣;第1搬送機械臂,配設在該保護構件形成裝置,將具備該保護構件的該晶圓收納於該交接卡匣;第2搬送機械臂,配設在該研削裝置,將具備該保護構件的該晶圓從該交接卡匣取出。
- 如申請專利範圍第1或2項所載之晶圓製造裝置,其中,該研削裝置包含旋轉清洗單元;該旋轉清洗單圓具備:保持該晶圓的旋轉台、對該晶圓噴灑清洗水的清洗噴嘴、及使該旋轉台旋轉的旋轉手段;該第2搬送機構從該旋轉台將該晶圓搬送至該剝離裝置。
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