TWI805611B - 電感耦合的電漿源的改進 - Google Patents

電感耦合的電漿源的改進 Download PDF

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Publication number
TWI805611B
TWI805611B TW107131285A TW107131285A TWI805611B TW I805611 B TWI805611 B TW I805611B TW 107131285 A TW107131285 A TW 107131285A TW 107131285 A TW107131285 A TW 107131285A TW I805611 B TWI805611 B TW I805611B
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Taiwan
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coil
section
conductors
coupled
shielding member
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TW107131285A
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English (en)
Chinese (zh)
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TW201933419A (zh
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詹姆士 羅傑斯
約翰 庖洛斯
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Discharge Heating (AREA)
TW107131285A 2017-10-09 2018-09-06 電感耦合的電漿源的改進 TWI805611B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/727,998 US11521828B2 (en) 2017-10-09 2017-10-09 Inductively coupled plasma source
US15/727,998 2017-10-09

Publications (2)

Publication Number Publication Date
TW201933419A TW201933419A (zh) 2019-08-16
TWI805611B true TWI805611B (zh) 2023-06-21

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW107131285A TWI805611B (zh) 2017-10-09 2018-09-06 電感耦合的電漿源的改進
TW112118647A TWI880219B (zh) 2017-10-09 2018-09-06 電感耦合的電漿源的改進

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112118647A TWI880219B (zh) 2017-10-09 2018-09-06 電感耦合的電漿源的改進

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US (2) US11521828B2 (enExample)
JP (2) JP7148610B2 (enExample)
KR (2) KR102371471B1 (enExample)
CN (2) CN111095475B (enExample)
TW (2) TWI805611B (enExample)
WO (1) WO2019074563A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11521828B2 (en) 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
WO2020131608A1 (en) * 2018-12-18 2020-06-25 Mattson Technology, Inc. Carbon containing hardmask removal process using sulfur containing process gas
JP6976279B2 (ja) * 2019-03-25 2021-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US12374530B2 (en) * 2019-08-28 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing apparatus for generating plasma
JP2021103641A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷
US12159770B2 (en) * 2020-12-28 2024-12-03 Beijing E-town Semiconductor Technology Co., Ltd. Cooled shield for ICP source
KR20230056817A (ko) * 2021-10-20 2023-04-28 세메스 주식회사 안테나 부재 및 기판 처리 장치
CN115295389B (zh) * 2022-08-23 2025-07-15 盛吉盛半导体科技(北京)有限公司 电感耦合等离子体装置及半导体薄膜设备
US20250232952A1 (en) * 2024-01-12 2025-07-17 Tokyo Electron Limited Balanced resonator source for plasma processing
CN118969592B (zh) * 2024-09-18 2025-09-23 海创智能装备(烟台)有限公司 一种晶圆等离子表面活性化设备及活性化方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120273130A1 (en) * 2011-04-28 2012-11-01 Lam Research Corporation Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and Outer TCP Coil
US20130220975A1 (en) * 2012-02-27 2013-08-29 Rajinder Dhindsa Hybrid plasma processing systems
TW201528329A (zh) * 2014-01-06 2015-07-16 Applied Materials Inc 具有客製ｒｆ屏蔽用於電漿外形控制的高效能感應耦合電漿源
TW201732079A (zh) * 2016-02-02 2017-09-16 東京威力科創股份有限公司 基板處理裝置

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068784A (en) 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US20010054601A1 (en) 1996-05-13 2001-12-27 Jian Ding Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5772832A (en) 1991-06-27 1998-06-30 Applied Materials, Inc Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5777289A (en) 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5753044A (en) 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5919382A (en) 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
ATE181637T1 (de) 1994-10-31 1999-07-15 Applied Materials Inc Plasmareaktoren zur halbleiterscheibenbehandlung
US6270617B1 (en) 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
JPH0997783A (ja) * 1995-09-28 1997-04-08 Nec Corp プラズマ処理装置
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6308654B1 (en) * 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
JP3146171B2 (ja) * 1997-03-17 2001-03-12 松下電器産業株式会社 プラズマ処理方法及び装置
US6369348B2 (en) 1997-06-30 2002-04-09 Applied Materials, Inc Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
US6076482A (en) * 1997-09-20 2000-06-20 Applied Materials, Inc. Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
KR100291898B1 (ko) 1999-04-09 2001-06-01 윤종용 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치
US6422173B1 (en) * 2000-06-30 2002-07-23 Lam Research Corporation Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
JP5160717B2 (ja) * 2000-07-06 2013-03-13 アプライド マテリアルズ インコーポレイテッド 対称的な並列導体のコイルアンテナを有するプラズマリアクタ
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6462481B1 (en) * 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US20020100557A1 (en) 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
US6685799B2 (en) * 2001-03-14 2004-02-03 Applied Materials Inc. Variable efficiency faraday shield
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US7223321B1 (en) 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
KR100513163B1 (ko) 2003-06-18 2005-09-08 삼성전자주식회사 Ｉｃｐ 안테나 및 이를 사용하는 플라즈마 발생장치
US7273533B2 (en) 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
KR100584122B1 (ko) * 2004-03-25 2006-05-29 에이피티씨 주식회사 플라즈마 소스코일을 갖는 플라즈마 챔버 및 이를 이용한웨이퍼 식각방법
US7780864B2 (en) 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US7727413B2 (en) 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US7645357B2 (en) 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US7264688B1 (en) 2006-04-24 2007-09-04 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and toroidal plasma sources
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
US20080129844A1 (en) 2006-10-27 2008-06-05 Cusack Francis J Apparatus for image capture with automatic and manual field of interest processing with a multi-resolution camera
TW200845197A (en) * 2007-03-28 2008-11-16 Matsushita Electric Industrial Co Ltd Plasma etching apparatus
CN101978475B (zh) 2008-03-21 2013-09-25 应用材料公司 屏蔽性盖加热器组件
CN101677485A (zh) * 2008-09-19 2010-03-24 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备、其射频装置以及射频输送方法
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
CN101789354B (zh) * 2010-02-11 2012-07-04 中微半导体设备(上海)有限公司 带扩散解离区域的等离子体处理装置
JP5656458B2 (ja) 2010-06-02 2015-01-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9653264B2 (en) 2010-12-17 2017-05-16 Mattson Technology, Inc. Inductively coupled plasma source for plasma processing
JP5727281B2 (ja) * 2011-04-21 2015-06-03 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
JP5310821B2 (ja) 2011-10-27 2013-10-09 パナソニック株式会社 プラズマエッチング装置
US8933628B2 (en) 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
US10271416B2 (en) 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130256271A1 (en) 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9111722B2 (en) 2012-04-24 2015-08-18 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
US9082591B2 (en) 2012-04-24 2015-07-14 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
US9449794B2 (en) * 2012-07-20 2016-09-20 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
KR102171725B1 (ko) * 2013-06-17 2020-10-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기를 위한 강화된 플라즈마 소스
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
CN104302084B (zh) 2013-07-17 2017-04-12 朗姆研究公司 空气冷却的法拉第屏蔽罩和使用该屏蔽罩的方法
US10553398B2 (en) * 2013-09-06 2020-02-04 Applied Materials, Inc. Power deposition control in inductively coupled plasma (ICP) reactors
US20160049279A1 (en) 2014-08-14 2016-02-18 Allied Techfinders Co., Ltd. Plasma device
JP6471963B2 (ja) 2015-02-04 2019-02-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
US20160118284A1 (en) 2014-10-22 2016-04-28 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus
US10332725B2 (en) 2015-03-30 2019-06-25 Lam Research Corporation Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network
CN107849694B (zh) * 2015-06-15 2020-03-31 应用材料公司 用于改良bcd及蚀刻深度性能的源rf功率分裂式内线圈
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120273130A1 (en) * 2011-04-28 2012-11-01 Lam Research Corporation Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and Outer TCP Coil
US20130220975A1 (en) * 2012-02-27 2013-08-29 Rajinder Dhindsa Hybrid plasma processing systems
TW201528329A (zh) * 2014-01-06 2015-07-16 Applied Materials Inc 具有客製ｒｆ屏蔽用於電漿外形控制的高效能感應耦合電漿源
TW201732079A (zh) * 2016-02-02 2017-09-16 東京威力科創股份有限公司 基板處理裝置

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JP7148610B2 (ja) 2022-10-05
JP7431296B2 (ja) 2024-02-14
CN116053108B (zh) 2025-09-12
CN116053108A (zh) 2023-05-02
US20230052071A1 (en) 2023-02-16
CN111095475A (zh) 2020-05-01
JP2020532087A (ja) 2020-11-05
JP2022180536A (ja) 2022-12-06
WO2019074563A1 (en) 2019-04-18
US11521828B2 (en) 2022-12-06
TW202341232A (zh) 2023-10-16
KR20220031766A (ko) 2022-03-11
KR102398974B1 (ko) 2022-05-16
TW201933419A (zh) 2019-08-16
KR102371471B1 (ko) 2022-03-04
KR20200026321A (ko) 2020-03-10
CN111095475B (zh) 2023-03-28
TWI880219B (zh) 2025-04-11
US20190108974A1 (en) 2019-04-11
US12217938B2 (en) 2025-02-04

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