JP7431296B2 - 誘導結合プラズマソースの改善 - Google Patents
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Description
本開示の諸実施形態は、概して、基板を処理するための誘導結合プラズマソースに関する。
マイクロエレクトロニクス製造では、誘導結合プラズマ(ICP)処理チャンバが一般的である。そのような反応器では、ガス内のガス原子から電子を分離する傾向があるガス内の電界を使用することにより、ガス内にプラズマが形成され、イオン、自由電子、中性分子、ラジカルのプラズマを生成する。プラズマを形成するICP法では、電界は、処理チャンバの外側に配置された1つ以上のコイルを流れるAC電流(例えば、RF)によって生成され、それにより、隣接するチャンバガス容積内のガスに電流を誘導する。電力伝達効率(すなわち、ガスへ効果的に伝達されてプラズマを形成した、コイルの通過電力量)は、ICP処理の重要な要素である。ICPソースは通常、容量性と誘導性の両方でチャンバ内のガスに結合しているが、容量結合はあまり効率的ではなく、このような理由から、プラズマが開始又は「点火」された後は望ましくない。容量結合により、プラズマの点火と低電力設定での動作が可能になり、この低電力設定では、低密度プラズマ(Eモードプラズマ)が生成される。一度プラズマが確立すると、誘導結合によりプラズマは高密度へ移行し(Hモードプラズマ)、容量結合の影響が最小限に抑えられる。
Claims (20)
- 基板を処理するための装置であって、
上部プレートと、
内側コイルと外側コイルを含むコイルであって、外側コイルが第1の平面に配置され、内側コイルは、
第1の平面内にあり、外側コイルに結合された内側コイルの第1のセグメントと、
第1のセグメントに直列に結合された第2のセグメントであって、第1のセグメントを第1の平面の外に延在させ、第1のセグメントによって外側コイルから分離された第2のセグメントを含むコイルと、
上部プレートに結合された内側支柱及び外側支柱であって、内側コイルが内側支柱によって支持され、外側コイルが外側支柱によって支持され、内側及び外側支柱は上部プレートから延在し、コイルを上部プレートから離れて支持する内側支柱及び外側支柱を備えた装置。 - 第1のセグメントは水平平面配置で構成される、請求項1に記載の装置。
- 第2のセグメントは垂直螺旋配置で構成される、請求項2に記載の装置。
- 第2のセグメントの垂直螺旋配置は内側コイルの中心に形成される円錐台構造を有する、請求項3に記載の装置。
- 第2セグメントが第2セットのコイル部分を含み、第2セットのコイル部分の各々は、外側コイルから離れる方向に距離が増加するにつれて減少する巻径を有する、請求項3に記載の装置。
- 内側コイルは垂直円筒配置で構成された第2のセグメントを有する、請求項2に記載の装置。
- 第2のセグメントは内側コイルの中心に形成される円錐台構造を有する、請求項6に記載の装置。
- 上部プレートがアルミニウム材料から製造される、請求項1に記載の装置。
- 1つ以上の独立ガイドを備え、1つ以上の独立ガイドの各々は、隣接する1つおきの外側支柱の間に配置され、1つ以上の独立ガイドの各々は第1の平面で外側コイルを支持する、請求項1に記載の装置。
- 上部プレートはこれを貫通する複数の通気口を含む、請求項1に記載の装置。
- 内側コイルはコイル短絡部部分で外側コイルに接続される、請求項1に記載の装置。
- 内側支柱及び外側支柱は電気絶縁材料で構成されている、請求項1に記載の装置。
- 基板を処理するための装置であって、
1つ以上の導体であって、1つ以上の導体の各々は、
第2のセグメントに直列に結合された第1のセグメントを含む内側コイルと、
内側コイルに直列に結合された外側コイルであって、第1の平面に配置され、第1のセグメントと同一平面上にあり、第1のセグメントから半径方向外側に第2の同心平面配列で構成される外側コイルと、
1つ以上の導体の内側コイルから外側コイルまで延在する短絡部であって、第2セグメントは第1平面に対して第1セグメントからある角度で延在し、第1セグメントによって外側コイルから分離される短絡部を備えた導体と、
1つ以上の導体の各々の内側コイルを支持する複数の内側支柱と、
1つ以上の導体の各々の外側コイルを支持する複数の外側支柱を備えた装置。 - 複数の内側支柱は4つの内側支柱を含み、
複数の外側支柱は8つの外側支柱を含む、請求項13に記載の装置。 - 1つ以上の導体は4つの導体を含む、請求項13に記載の装置。
- 第2のセグメントは、減少する巻径を有する垂直螺旋配置で構成される、請求項13に記載の装置。
- 第2のセグメントは垂直円筒配置で構成される、請求項13に記載の装置。
- 第2のセグメントは内側コイルの中心に形成される円錐台構造を有する、請求項13に記載の装置。
- 基板を処理するための装置であって、
1つ以上の導体であって、各々が短絡部によって外側コイルに直列に結合された内側コイルを備え、短絡部は1つ以上の導体の各々の内側コイルから各々の外側コイルに延在している導体であって、
外側コイル及び短絡部は、第1の平面に配置され、
内側コイルは第2のセグメントに直列に結合された第1のセグメントを含み、第1のセグメントは、第1の平面において第1の同心平面配置で構成され、
第2のセグメントは、下方の第1のセグメントから延在し、第1の平面に対して非平行であり、第1のセグメントによって外側コイルから分離されており、
第2のセグメントは垂直円筒配置で構成され、第2のセグメントは内側コイルの中心に形成される円錐台構造を有する導体と、
内側コイルに結合された1つ以上の内側支柱と、
外側コイルに結合された1つ以上の外側支柱を備える装置。 - 第1のセグメントは、第1の平面に配置された少なくとも2つの同心コイルを含む、請求項19に記載の装置。
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US15/727,998 | 2017-10-09 | ||
US15/727,998 US11521828B2 (en) | 2017-10-09 | 2017-10-09 | Inductively coupled plasma source |
JP2020531430A JP7148610B2 (ja) | 2017-10-09 | 2018-07-10 | 基板処理装置 |
PCT/US2018/041499 WO2019074563A1 (en) | 2017-10-09 | 2018-07-10 | IMPROVEMENTS IN INDUCTIVE COUPLING PLASMA SOURCE |
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US11521828B2 (en) * | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
WO2020131608A1 (en) * | 2018-12-18 | 2020-06-25 | Mattson Technology, Inc. | Carbon containing hardmask removal process using sulfur containing process gas |
JP6976279B2 (ja) * | 2019-03-25 | 2021-12-08 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US20210066054A1 (en) * | 2019-08-28 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus for generating plasma |
US20220208527A1 (en) * | 2020-12-28 | 2022-06-30 | Mattson Technology, Inc. | Cooled Shield for ICP Source |
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