KR102371471B1 - 유도 결합 플라즈마 소스에 대한 개선들 - Google Patents

유도 결합 플라즈마 소스에 대한 개선들 Download PDF

Info

Publication number
KR102371471B1
KR102371471B1 KR1020207006225A KR20207006225A KR102371471B1 KR 102371471 B1 KR102371471 B1 KR 102371471B1 KR 1020207006225 A KR1020207006225 A KR 1020207006225A KR 20207006225 A KR20207006225 A KR 20207006225A KR 102371471 B1 KR102371471 B1 KR 102371471B1
Authority
KR
South Korea
Prior art keywords
coil
substrate
processing
inner coil
closure member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020207006225A
Other languages
English (en)
Korean (ko)
Other versions
KR20200026321A (ko
Inventor
제임스 로저스
존 폴로스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Priority to KR1020227007096A priority Critical patent/KR102398974B1/ko
Publication of KR20200026321A publication Critical patent/KR20200026321A/ko
Application granted granted Critical
Publication of KR102371471B1 publication Critical patent/KR102371471B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32651Shields, e.g. dark space shields, Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • H01J2237/0266Shields electromagnetic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Discharge Heating (AREA)
KR1020207006225A 2017-10-09 2018-07-10 유도 결합 플라즈마 소스에 대한 개선들 Active KR102371471B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227007096A KR102398974B1 (ko) 2017-10-09 2018-07-10 유도 결합 플라즈마 소스에 대한 개선들

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/727,998 US11521828B2 (en) 2017-10-09 2017-10-09 Inductively coupled plasma source
US15/727,998 2017-10-09
PCT/US2018/041499 WO2019074563A1 (en) 2017-10-09 2018-07-10 IMPROVEMENTS IN INDUCTIVE COUPLING PLASMA SOURCE

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227007096A Division KR102398974B1 (ko) 2017-10-09 2018-07-10 유도 결합 플라즈마 소스에 대한 개선들

Publications (2)

Publication Number Publication Date
KR20200026321A KR20200026321A (ko) 2020-03-10
KR102371471B1 true KR102371471B1 (ko) 2022-03-04

Family

ID=65993411

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207006225A Active KR102371471B1 (ko) 2017-10-09 2018-07-10 유도 결합 플라즈마 소스에 대한 개선들
KR1020227007096A Active KR102398974B1 (ko) 2017-10-09 2018-07-10 유도 결합 플라즈마 소스에 대한 개선들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227007096A Active KR102398974B1 (ko) 2017-10-09 2018-07-10 유도 결합 플라즈마 소스에 대한 개선들

Country Status (6)

Country Link
US (2) US11521828B2 (enExample)
JP (2) JP7148610B2 (enExample)
KR (2) KR102371471B1 (enExample)
CN (2) CN111095475B (enExample)
TW (2) TWI805611B (enExample)
WO (1) WO2019074563A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11521828B2 (en) 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
WO2020131608A1 (en) * 2018-12-18 2020-06-25 Mattson Technology, Inc. Carbon containing hardmask removal process using sulfur containing process gas
JP6976279B2 (ja) * 2019-03-25 2021-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US12374530B2 (en) * 2019-08-28 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing apparatus for generating plasma
JP2021103641A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷
US12159770B2 (en) * 2020-12-28 2024-12-03 Beijing E-town Semiconductor Technology Co., Ltd. Cooled shield for ICP source
KR20230056817A (ko) * 2021-10-20 2023-04-28 세메스 주식회사 안테나 부재 및 기판 처리 장치
CN115295389B (zh) * 2022-08-23 2025-07-15 盛吉盛半导体科技(北京)有限公司 电感耦合等离子体装置及半导体薄膜设备
US20250232952A1 (en) * 2024-01-12 2025-07-17 Tokyo Electron Limited Balanced resonator source for plasma processing
CN118969592B (zh) * 2024-09-18 2025-09-23 海创智能装备(烟台)有限公司 一种晶圆等离子表面活性化设备及活性化方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033960A (ja) * 2011-10-27 2012-02-16 Panasonic Corp プラズマエッチング装置
JP2016143616A (ja) * 2015-02-04 2016-08-08 パナソニックIpマネジメント株式会社 プラズマ処理装置

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068784A (en) 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US20010054601A1 (en) 1996-05-13 2001-12-27 Jian Ding Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5772832A (en) 1991-06-27 1998-06-30 Applied Materials, Inc Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5777289A (en) 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5753044A (en) 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5919382A (en) 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
ATE181637T1 (de) 1994-10-31 1999-07-15 Applied Materials Inc Plasmareaktoren zur halbleiterscheibenbehandlung
US6270617B1 (en) 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
JPH0997783A (ja) * 1995-09-28 1997-04-08 Nec Corp プラズマ処理装置
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6308654B1 (en) * 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
JP3146171B2 (ja) * 1997-03-17 2001-03-12 松下電器産業株式会社 プラズマ処理方法及び装置
US6369348B2 (en) 1997-06-30 2002-04-09 Applied Materials, Inc Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
US6076482A (en) * 1997-09-20 2000-06-20 Applied Materials, Inc. Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
KR100291898B1 (ko) 1999-04-09 2001-06-01 윤종용 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치
US6422173B1 (en) * 2000-06-30 2002-07-23 Lam Research Corporation Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
JP5160717B2 (ja) * 2000-07-06 2013-03-13 アプライド マテリアルズ インコーポレイテッド 対称的な並列導体のコイルアンテナを有するプラズマリアクタ
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6462481B1 (en) * 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US20020100557A1 (en) 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
US6685799B2 (en) * 2001-03-14 2004-02-03 Applied Materials Inc. Variable efficiency faraday shield
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US7223321B1 (en) 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
KR100513163B1 (ko) 2003-06-18 2005-09-08 삼성전자주식회사 Icp 안테나 및 이를 사용하는 플라즈마 발생장치
US7273533B2 (en) 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
KR100584122B1 (ko) * 2004-03-25 2006-05-29 에이피티씨 주식회사 플라즈마 소스코일을 갖는 플라즈마 챔버 및 이를 이용한웨이퍼 식각방법
US7780864B2 (en) 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US7727413B2 (en) 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US7645357B2 (en) 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US7264688B1 (en) 2006-04-24 2007-09-04 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and toroidal plasma sources
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
US20080129844A1 (en) 2006-10-27 2008-06-05 Cusack Francis J Apparatus for image capture with automatic and manual field of interest processing with a multi-resolution camera
TW200845197A (en) * 2007-03-28 2008-11-16 Matsushita Electric Industrial Co Ltd Plasma etching apparatus
CN101978475B (zh) 2008-03-21 2013-09-25 应用材料公司 屏蔽性盖加热器组件
CN101677485A (zh) * 2008-09-19 2010-03-24 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备、其射频装置以及射频输送方法
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
CN101789354B (zh) * 2010-02-11 2012-07-04 中微半导体设备(上海)有限公司 带扩散解离区域的等离子体处理装置
JP5656458B2 (ja) 2010-06-02 2015-01-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9653264B2 (en) 2010-12-17 2017-05-16 Mattson Technology, Inc. Inductively coupled plasma source for plasma processing
JP5727281B2 (ja) * 2011-04-21 2015-06-03 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US9490106B2 (en) * 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US8933628B2 (en) 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
US10271416B2 (en) 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130220975A1 (en) * 2012-02-27 2013-08-29 Rajinder Dhindsa Hybrid plasma processing systems
US20130256271A1 (en) 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9111722B2 (en) 2012-04-24 2015-08-18 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
US9082591B2 (en) 2012-04-24 2015-07-14 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
US9449794B2 (en) * 2012-07-20 2016-09-20 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
KR102171725B1 (ko) * 2013-06-17 2020-10-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기를 위한 강화된 플라즈마 소스
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
CN104302084B (zh) 2013-07-17 2017-04-12 朗姆研究公司 空气冷却的法拉第屏蔽罩和使用该屏蔽罩的方法
US10553398B2 (en) * 2013-09-06 2020-02-04 Applied Materials, Inc. Power deposition control in inductively coupled plasma (ICP) reactors
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US20160049279A1 (en) 2014-08-14 2016-02-18 Allied Techfinders Co., Ltd. Plasma device
US20160118284A1 (en) 2014-10-22 2016-04-28 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus
US10332725B2 (en) 2015-03-30 2019-06-25 Lam Research Corporation Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network
CN107849694B (zh) * 2015-06-15 2020-03-31 应用材料公司 用于改良bcd及蚀刻深度性能的源rf功率分裂式内线圈
JP6740881B2 (ja) 2016-02-02 2020-08-19 東京エレクトロン株式会社 基板処理装置
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033960A (ja) * 2011-10-27 2012-02-16 Panasonic Corp プラズマエッチング装置
JP2016143616A (ja) * 2015-02-04 2016-08-08 パナソニックIpマネジメント株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP7148610B2 (ja) 2022-10-05
JP7431296B2 (ja) 2024-02-14
CN116053108B (zh) 2025-09-12
CN116053108A (zh) 2023-05-02
US20230052071A1 (en) 2023-02-16
CN111095475A (zh) 2020-05-01
JP2020532087A (ja) 2020-11-05
JP2022180536A (ja) 2022-12-06
WO2019074563A1 (en) 2019-04-18
US11521828B2 (en) 2022-12-06
TW202341232A (zh) 2023-10-16
KR20220031766A (ko) 2022-03-11
KR102398974B1 (ko) 2022-05-16
TW201933419A (zh) 2019-08-16
KR20200026321A (ko) 2020-03-10
CN111095475B (zh) 2023-03-28
TWI805611B (zh) 2023-06-21
TWI880219B (zh) 2025-04-11
US20190108974A1 (en) 2019-04-11
US12217938B2 (en) 2025-02-04

Similar Documents

Publication Publication Date Title
KR102371471B1 (ko) 유도 결합 플라즈마 소스에 대한 개선들
KR102069923B1 (ko) 플라즈마 처리 장치 및 필터 유닛
KR102177576B1 (ko) 플라즈마 처리 장치 및 필터 유닛
US10170279B2 (en) Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US6414648B1 (en) Plasma reactor having a symmetric parallel conductor coil antenna
US6694915B1 (en) Plasma reactor having a symmetrical parallel conductor coil antenna
US6462481B1 (en) Plasma reactor having a symmetric parallel conductor coil antenna
US6685798B1 (en) Plasma reactor having a symmetrical parallel conductor coil antenna
US7464662B2 (en) Compact, distributed inductive element for large scale inductively-coupled plasma sources
US6409933B1 (en) Plasma reactor having a symmetric parallel conductor coil antenna
JP5160717B2 (ja) 対称的な並列導体のコイルアンテナを有するプラズマリアクタ
KR20180119498A (ko) 필터 장치 및 플라즈마 처리 장치
CN102421239A (zh) 等离子体处理装置
JP7416986B2 (ja) コイル構造およびプラズマ処理装置
KR19980071217A (ko) Hdp-cvd 챔버용 플라즈마 소오스
JP2002507823A (ja) 分配型誘導結合プラズマソース
KR20040110173A (ko) Icp 안테나 및 이를 사용하는 플라즈마 발생장치
US10825657B2 (en) Plasma processing apparatus
TW201740455A (zh) 反應腔室及半導體加工裝置
US20230134296A1 (en) Transformer Isolator Having RF Shield Structure for Effective Magnetic Power Transfer
CN113921360A (zh) 等离子体处理装置中的加热装置及抗射频干扰方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5