TWI803537B - 半導體發光裝置、汎用安裝基板以及使用其之半導體發光裝置之製造方法 - Google Patents
半導體發光裝置、汎用安裝基板以及使用其之半導體發光裝置之製造方法 Download PDFInfo
- Publication number
- TWI803537B TWI803537B TW107141399A TW107141399A TWI803537B TW I803537 B TWI803537 B TW I803537B TW 107141399 A TW107141399 A TW 107141399A TW 107141399 A TW107141399 A TW 107141399A TW I803537 B TWI803537 B TW I803537B
- Authority
- TW
- Taiwan
- Prior art keywords
- range
- aforementioned
- semiconductor light
- mounting
- width
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 68
- 125000006850 spacer group Chemical group 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000009434 installation Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 229910005728 SnZn Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017242065A JP7064324B2 (ja) | 2017-12-18 | 2017-12-18 | 半導体発光装置、および、それを用いた半導体発光装置の製造方法 |
JP2017-242065 | 2017-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201929190A TW201929190A (zh) | 2019-07-16 |
TWI803537B true TWI803537B (zh) | 2023-06-01 |
Family
ID=66984660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107141399A TWI803537B (zh) | 2017-12-18 | 2018-11-21 | 半導體發光裝置、汎用安裝基板以及使用其之半導體發光裝置之製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7064324B2 (ko) |
KR (1) | KR102637463B1 (ko) |
CN (1) | CN109935672A (ko) |
TW (1) | TWI803537B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863758B (zh) * | 2020-06-04 | 2022-08-23 | 上海美仁半导体有限公司 | 一种安装基板、半导体器件和家用电器 |
JP7482072B2 (ja) * | 2021-03-22 | 2024-05-13 | 株式会社東芝 | 半導体装置 |
WO2024034482A1 (ja) * | 2022-08-10 | 2024-02-15 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置、及び半導体装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003264267A (ja) * | 2002-03-08 | 2003-09-19 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2008118071A (ja) * | 2006-11-08 | 2008-05-22 | Nichia Chem Ind Ltd | 実装用部品、および半導体装置 |
JP2008117900A (ja) * | 2006-11-02 | 2008-05-22 | Nichia Chem Ind Ltd | 発光装置 |
JP2014022576A (ja) * | 2012-07-18 | 2014-02-03 | Nichia Chem Ind Ltd | 半導体素子実装部材及び半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080042012A (ko) * | 2006-11-08 | 2008-05-14 | 산요덴키가부시키가이샤 | 소자 탑재용 기판, 그 제조 방법, 반도체 모듈 및 휴대기기 |
JP5082710B2 (ja) | 2007-09-19 | 2012-11-28 | 日亜化学工業株式会社 | 発光装置 |
US20120007117A1 (en) * | 2010-07-08 | 2012-01-12 | Andrews Peter S | Submount for Electronic Die Attach with Controlled Voids and Methods of Attaching an Electronic Die to a Submount Including Engineered Voids |
JP2012109352A (ja) | 2010-11-16 | 2012-06-07 | Stanley Electric Co Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
JP2013012567A (ja) * | 2011-06-29 | 2013-01-17 | Sanken Electric Co Ltd | 半導体装置 |
-
2017
- 2017-12-18 JP JP2017242065A patent/JP7064324B2/ja active Active
-
2018
- 2018-11-12 KR KR1020180138198A patent/KR102637463B1/ko active IP Right Grant
- 2018-11-20 CN CN201811381698.0A patent/CN109935672A/zh active Pending
- 2018-11-21 TW TW107141399A patent/TWI803537B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003264267A (ja) * | 2002-03-08 | 2003-09-19 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2008117900A (ja) * | 2006-11-02 | 2008-05-22 | Nichia Chem Ind Ltd | 発光装置 |
JP2008118071A (ja) * | 2006-11-08 | 2008-05-22 | Nichia Chem Ind Ltd | 実装用部品、および半導体装置 |
JP2014022576A (ja) * | 2012-07-18 | 2014-02-03 | Nichia Chem Ind Ltd | 半導体素子実装部材及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN109935672A (zh) | 2019-06-25 |
JP7064324B2 (ja) | 2022-05-10 |
JP2019110203A (ja) | 2019-07-04 |
TW201929190A (zh) | 2019-07-16 |
KR20190073258A (ko) | 2019-06-26 |
KR102637463B1 (ko) | 2024-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10559735B2 (en) | Light emitting device having a pair of vias passing through a center of the concave component | |
TWI803537B (zh) | 半導體發光裝置、汎用安裝基板以及使用其之半導體發光裝置之製造方法 | |
WO2011007621A1 (ja) | 発光装置 | |
JP5781741B2 (ja) | 発光装置 | |
JP5082710B2 (ja) | 発光装置 | |
CN103460415A (zh) | 发光器件封装、系统和方法 | |
US9780274B2 (en) | Light-emitting apparatus and illumination apparatus | |
JP6736256B2 (ja) | Ledパッケージ | |
US9472738B2 (en) | Light emitting member having a wiring board with through hole exposing a light emitting semiconductor element with a light reflecting member covering a peripheral wall portion of the through hole | |
JP6501564B2 (ja) | 発光装置 | |
US10546988B2 (en) | Light emitting device and solder bond structure | |
JP2008124195A (ja) | 発光装置およびその製造方法 | |
JP2012094689A (ja) | 発光装置および発光装置の製造方法 | |
TWI771529B (zh) | 半導體發光裝置、汎用安裝基板、及使用其之半導體發光裝置之製造方法 | |
KR100671979B1 (ko) | 발광다이오드용 방열 패키지 | |
JP6633881B2 (ja) | Led照明器具およびその製造方法 | |
JP2007005607A (ja) | 半導体装置 | |
JP2017130532A (ja) | 発光装置 | |
CN102054928A (zh) | 发光器件封装和照明系统 | |
JP2017195347A (ja) | 発光装置 | |
US11088303B2 (en) | Light emitting device | |
TWI811723B (zh) | 發光元件封裝結構及其製造方法 | |
KR101751909B1 (ko) | 발광 소자 | |
JP2018032796A (ja) | 発光素子収納用パッケージおよび発光装置 | |
KR102486034B1 (ko) | 발광소자 패키지 및 조명 장치 |