TWI803149B - 熱處理方法及熱處理裝置 - Google Patents

熱處理方法及熱處理裝置 Download PDF

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Publication number
TWI803149B
TWI803149B TW111101593A TW111101593A TWI803149B TW I803149 B TWI803149 B TW I803149B TW 111101593 A TW111101593 A TW 111101593A TW 111101593 A TW111101593 A TW 111101593A TW I803149 B TWI803149 B TW I803149B
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TW
Taiwan
Prior art keywords
pressure
heat treatment
chamber
cavity
semiconductor wafer
Prior art date
Application number
TW111101593A
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English (en)
Chinese (zh)
Other versions
TW202217969A (zh
Inventor
青山敬幸
河原崎光
古川雅志
加藤慎一
布施和彥
谷村英昭
Original Assignee
日商思可林集團股份有限公司
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Application filed by 日商思可林集團股份有限公司 filed Critical 日商思可林集團股份有限公司
Publication of TW202217969A publication Critical patent/TW202217969A/zh
Application granted granted Critical
Publication of TWI803149B publication Critical patent/TWI803149B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Tunnel Furnaces (AREA)
TW111101593A 2015-08-26 2016-08-08 熱處理方法及熱處理裝置 TWI803149B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-166511 2015-08-26
JP2015166511 2015-08-26
JP2016-103275 2016-05-24
JP2016103275A JP6665032B2 (ja) 2015-08-26 2016-05-24 熱処理方法および熱処理装置

Publications (2)

Publication Number Publication Date
TW202217969A TW202217969A (zh) 2022-05-01
TWI803149B true TWI803149B (zh) 2023-05-21

Family

ID=58210117

Family Applications (3)

Application Number Title Priority Date Filing Date
TW111101593A TWI803149B (zh) 2015-08-26 2016-08-08 熱處理方法及熱處理裝置
TW109130166A TWI755840B (zh) 2015-08-26 2016-08-08 熱處理方法及熱處理裝置
TW105125204A TWI707402B (zh) 2015-08-26 2016-08-08 熱處理方法及熱處理裝置

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TW109130166A TWI755840B (zh) 2015-08-26 2016-08-08 熱處理方法及熱處理裝置
TW105125204A TWI707402B (zh) 2015-08-26 2016-08-08 熱處理方法及熱處理裝置

Country Status (3)

Country Link
JP (2) JP6665032B2 (ja)
CN (2) CN106486397B (ja)
TW (3) TWI803149B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6837911B2 (ja) 2017-05-17 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2018206847A (ja) * 2017-05-31 2018-12-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラムおよび基板処理装置
JP7009102B2 (ja) * 2017-07-27 2022-01-25 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置の排気方法
JP6991795B2 (ja) * 2017-08-30 2022-01-13 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP6975596B2 (ja) * 2017-09-20 2021-12-01 株式会社Ｓｃｒｅｅｎホールディングス パーティクル除去方法および熱処理装置
JP7042115B2 (ja) 2018-02-28 2022-03-25 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP6963536B2 (ja) * 2018-06-20 2021-11-10 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理装置の雰囲気置換方法
JP7179531B2 (ja) 2018-08-28 2022-11-29 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP7278111B2 (ja) 2019-03-08 2023-05-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
US11823907B2 (en) * 2019-10-16 2023-11-21 Wonik Ips Co., Ltd. Processing method for substrate
JP7446836B2 (ja) * 2020-02-03 2024-03-11 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7362508B2 (ja) * 2020-02-25 2023-10-17 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
KR20220026713A (ko) * 2020-08-26 2022-03-07 주식회사 원익아이피에스 기판처리방법과, 그에 따른 기판처리장치 및 반도체 소자 제조방법
KR20220137384A (ko) * 2021-04-02 2022-10-12 주식회사 원익아이피에스 기판처리방법

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* Cited by examiner, † Cited by third party
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US20040106350A1 (en) * 1999-11-11 2004-06-03 Yoshiki Sasaki Manufacturing method and manufacturing apparatus for a gas discharge panel
US20130203269A1 (en) * 2012-02-03 2013-08-08 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method
US20130206747A1 (en) * 2012-02-15 2013-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus for heating substrate by irradiating substrate with flash of light

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JP3165324B2 (ja) * 1994-04-13 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3485403B2 (ja) * 1995-11-28 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
JPH11181568A (ja) * 1997-10-16 1999-07-06 Toshiba Ceramics Co Ltd 処理空間へのガス導入装置および処理空間からのガス排出装置
DE60143541D1 (de) * 2000-09-19 2011-01-05 Mattson Tech Inc Verfahren zur ausbildung dielektrischer filme
CN1258617C (zh) * 2001-03-20 2006-06-07 马特森技术公司 用于在衬底上沉积具有较高介电常数的涂层的方法
WO2008081724A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
WO2008081723A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
JP2010278158A (ja) * 2009-05-27 2010-12-09 Renesas Electronics Corp 半導体装置の製造方法
JP2012104808A (ja) * 2010-10-14 2012-05-31 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
JP5559656B2 (ja) * 2010-10-14 2014-07-23 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP5944152B2 (ja) * 2011-12-07 2016-07-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
TWI564960B (zh) * 2011-09-16 2017-01-01 聯華電子股份有限公司 高介電常數介電層的製作方法
JP6026749B2 (ja) * 2012-02-03 2016-11-16 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP5931477B2 (ja) * 2012-02-03 2016-06-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP5964630B2 (ja) * 2012-03-27 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP5955604B2 (ja) * 2012-03-28 2016-07-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP6005966B2 (ja) * 2012-03-29 2016-10-12 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP5955658B2 (ja) * 2012-06-15 2016-07-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040106350A1 (en) * 1999-11-11 2004-06-03 Yoshiki Sasaki Manufacturing method and manufacturing apparatus for a gas discharge panel
US20130203269A1 (en) * 2012-02-03 2013-08-08 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method
US20130206747A1 (en) * 2012-02-15 2013-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus for heating substrate by irradiating substrate with flash of light

Also Published As

Publication number Publication date
TW202111816A (zh) 2021-03-16
JP2020077893A (ja) 2020-05-21
TW202217969A (zh) 2022-05-01
JP6894023B2 (ja) 2021-06-23
TWI755840B (zh) 2022-02-21
TW201712756A (zh) 2017-04-01
CN112652559A (zh) 2021-04-13
CN106486397A (zh) 2017-03-08
CN106486397B (zh) 2021-01-12
JP2017045982A (ja) 2017-03-02
JP6665032B2 (ja) 2020-03-13
TWI707402B (zh) 2020-10-11

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