TWI798875B - 蝕刻氣體及其製造方法、以及、蝕刻方法、半導體元件之製造方法 - Google Patents

蝕刻氣體及其製造方法、以及、蝕刻方法、半導體元件之製造方法 Download PDF

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Publication number
TWI798875B
TWI798875B TW110138291A TW110138291A TWI798875B TW I798875 B TWI798875 B TW I798875B TW 110138291 A TW110138291 A TW 110138291A TW 110138291 A TW110138291 A TW 110138291A TW I798875 B TWI798875 B TW I798875B
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TW
Taiwan
Prior art keywords
etching
etched
gas
fluorobutene
etching gas
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TW110138291A
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English (en)
Chinese (zh)
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TW202225484A (zh
Inventor
鈴木淳
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日商昭和電工股份有限公司
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Publication of TW202225484A publication Critical patent/TW202225484A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Bipolar Transistors (AREA)
TW110138291A 2020-10-15 2021-10-15 蝕刻氣體及其製造方法、以及、蝕刻方法、半導體元件之製造方法 TWI798875B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020173919 2020-10-15
JP2020-173919 2020-10-15

Publications (2)

Publication Number Publication Date
TW202225484A TW202225484A (zh) 2022-07-01
TWI798875B true TWI798875B (zh) 2023-04-11

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ID=81208086

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TW110138291A TWI798875B (zh) 2020-10-15 2021-10-15 蝕刻氣體及其製造方法、以及、蝕刻方法、半導體元件之製造方法

Country Status (8)

Country Link
US (1) US20230386853A1 (https=)
EP (1) EP4231334A4 (https=)
JP (1) JPWO2022080272A1 (https=)
KR (1) KR102828130B1 (https=)
CN (1) CN116325090B (https=)
IL (1) IL302116A (https=)
TW (1) TWI798875B (https=)
WO (1) WO2022080272A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050119512A1 (en) * 2003-04-29 2005-06-02 Central Glass Company, Limited Fluorobutene derivatives and process for producing same
TWI249514B (en) * 2002-01-16 2006-02-21 Air Prod & Chem Purification of hexafluoro-1,3-butadiene
TW200909390A (en) * 2007-02-09 2009-03-01 Du Pont Laser-assisted etching using gas compositions comprising unsaturated fluorocarbons
JP2009206444A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd プラズマエッチング方法
TW201226368A (en) * 2010-12-10 2012-07-01 Du Pont Purification of cis-1,1,1,4,4,4-hexafluoro-2-butene via extractive distillation
CN102884030A (zh) * 2010-03-26 2013-01-16 霍尼韦尔国际公司 制备六氟-2-丁烯的方法
CN102892739A (zh) * 2010-05-21 2013-01-23 霍尼韦尔国际公司 用于顺式1,1,1,4,4,4-六氟-2-丁烯的方法
CN104945220A (zh) * 2010-05-21 2015-09-30 霍尼韦尔国际公司 生产氟代烯烃的方法
WO2019203318A1 (ja) * 2018-04-19 2019-10-24 Ａｇｃ株式会社 フルオロオレフィンの製造方法
TWI703206B (zh) * 2013-12-30 2020-09-01 美商杜邦股份有限公司 腔室清潔及半導體蝕刻氣體

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4432230B2 (ja) * 2000-07-27 2010-03-17 日本ゼオン株式会社 フッ素化炭化水素の精製方法、溶剤、潤滑性重合体含有液および潤滑性重合体膜を有する物品
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
CN104885203B (zh) * 2012-10-30 2017-08-01 乔治洛德方法研究和开发液化空气有限公司 用于高纵横比氧化物蚀刻的氟碳分子
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度２，２−ジフルオロブタン
EP3012241B1 (en) * 2013-06-17 2018-10-31 Zeon Corporation Plasma etching method with high-purity 1-fluorobutane
AU2016237124B2 (en) * 2015-03-24 2020-07-23 Sekisui Chemical Co., Ltd. Phenolic resin foam and method for producing phenolic resin foam
JP6323540B1 (ja) * 2016-11-28 2018-05-16 セントラル硝子株式会社 ドライエッチング剤組成物及びドライエッチング方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI249514B (en) * 2002-01-16 2006-02-21 Air Prod & Chem Purification of hexafluoro-1,3-butadiene
US20050119512A1 (en) * 2003-04-29 2005-06-02 Central Glass Company, Limited Fluorobutene derivatives and process for producing same
TW200909390A (en) * 2007-02-09 2009-03-01 Du Pont Laser-assisted etching using gas compositions comprising unsaturated fluorocarbons
JP2009206444A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd プラズマエッチング方法
CN102884030A (zh) * 2010-03-26 2013-01-16 霍尼韦尔国际公司 制备六氟-2-丁烯的方法
CN102892739A (zh) * 2010-05-21 2013-01-23 霍尼韦尔国际公司 用于顺式1,1,1,4,4,4-六氟-2-丁烯的方法
CN104945220A (zh) * 2010-05-21 2015-09-30 霍尼韦尔国际公司 生产氟代烯烃的方法
TW201226368A (en) * 2010-12-10 2012-07-01 Du Pont Purification of cis-1,1,1,4,4,4-hexafluoro-2-butene via extractive distillation
TWI703206B (zh) * 2013-12-30 2020-09-01 美商杜邦股份有限公司 腔室清潔及半導體蝕刻氣體
WO2019203318A1 (ja) * 2018-04-19 2019-10-24 Ａｇｃ株式会社 フルオロオレフィンの製造方法

Also Published As

Publication number Publication date
WO2022080272A1 (ja) 2022-04-21
EP4231334A1 (en) 2023-08-23
JPWO2022080272A1 (https=) 2022-04-21
EP4231334A4 (en) 2024-11-13
KR20230066074A (ko) 2023-05-12
IL302116A (en) 2023-06-01
US20230386853A1 (en) 2023-11-30
CN116325090A (zh) 2023-06-23
TW202225484A (zh) 2022-07-01
CN116325090B (zh) 2026-03-24
KR102828130B1 (ko) 2025-07-03

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