IL302116A - Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element - Google Patents
Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor elementInfo
- Publication number
- IL302116A IL302116A IL302116A IL30211623A IL302116A IL 302116 A IL302116 A IL 302116A IL 302116 A IL302116 A IL 302116A IL 30211623 A IL30211623 A IL 30211623A IL 302116 A IL302116 A IL 302116A
- Authority
- IL
- Israel
- Prior art keywords
- etching
- gas
- fluorobutene
- etched
- less
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020173919 | 2020-10-15 | ||
| PCT/JP2021/037426 WO2022080272A1 (ja) | 2020-10-15 | 2021-10-08 | エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL302116A true IL302116A (en) | 2023-06-01 |
Family
ID=81208086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL302116A IL302116A (en) | 2020-10-15 | 2021-10-08 | Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230386853A1 (https=) |
| EP (1) | EP4231334A4 (https=) |
| JP (1) | JPWO2022080272A1 (https=) |
| KR (1) | KR102828130B1 (https=) |
| CN (1) | CN116325090B (https=) |
| IL (1) | IL302116A (https=) |
| TW (1) | TWI798875B (https=) |
| WO (1) | WO2022080272A1 (https=) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4432230B2 (ja) * | 2000-07-27 | 2010-03-17 | 日本ゼオン株式会社 | フッ素化炭化水素の精製方法、溶剤、潤滑性重合体含有液および潤滑性重合体膜を有する物品 |
| US6544319B1 (en) * | 2002-01-16 | 2003-04-08 | Air Products And Chemicals, Inc. | Purification of hexafluoro-1,3-butadiene |
| US20050119512A1 (en) * | 2003-04-29 | 2005-06-02 | Central Glass Company, Limited | Fluorobutene derivatives and process for producing same |
| US20080191163A1 (en) * | 2007-02-09 | 2008-08-14 | Mocella Michael T | Laser-Assisted Etching Using Gas Compositions Comprising Unsaturated Fluorocarbons |
| WO2009041560A1 (ja) * | 2007-09-28 | 2009-04-02 | Zeon Corporation | プラズマエッチング方法 |
| JP4978512B2 (ja) * | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| US8461401B2 (en) * | 2010-03-26 | 2013-06-11 | Honeywell International Inc. | Method for making hexafluoro-2-butene |
| US8901360B2 (en) * | 2010-05-21 | 2014-12-02 | Honeywell International Inc. | Process for cis 1,1,1,4,4,4-hexafluoro-2-butene |
| US8530709B2 (en) * | 2010-05-21 | 2013-09-10 | Honeywell International Inc. | Process for the production of fluorinated alkenes |
| US8871987B2 (en) * | 2010-12-10 | 2014-10-28 | E I Du Pont De Nemours And Company | Purification of cis-1,1,1,4,4,4-hexafluoro-2-butene via extractive distillation |
| CN104885203B (zh) * | 2012-10-30 | 2017-08-01 | 乔治洛德方法研究和开发液化空气有限公司 | 用于高纵横比氧化物蚀刻的氟碳分子 |
| JP2014185111A (ja) * | 2013-03-25 | 2014-10-02 | Nippon Zeon Co Ltd | 高純度２，２−ジフルオロブタン |
| EP3012241B1 (en) * | 2013-06-17 | 2018-10-31 | Zeon Corporation | Plasma etching method with high-purity 1-fluorobutane |
| US10109496B2 (en) * | 2013-12-30 | 2018-10-23 | The Chemours Company Fc, Llc | Chamber cleaning and semiconductor etching gases |
| AU2016237124B2 (en) * | 2015-03-24 | 2020-07-23 | Sekisui Chemical Co., Ltd. | Phenolic resin foam and method for producing phenolic resin foam |
| JP6323540B1 (ja) * | 2016-11-28 | 2018-05-16 | セントラル硝子株式会社 | ドライエッチング剤組成物及びドライエッチング方法 |
| JP2021120351A (ja) * | 2018-04-19 | 2021-08-19 | Ａｇｃ株式会社 | フルオロオレフィンの製造方法 |
-
2021
- 2021-10-08 JP JP2022556930A patent/JPWO2022080272A1/ja active Pending
- 2021-10-08 CN CN202180070335.9A patent/CN116325090B/zh active Active
- 2021-10-08 EP EP21880011.8A patent/EP4231334A4/en active Pending
- 2021-10-08 KR KR1020237012113A patent/KR102828130B1/ko active Active
- 2021-10-08 WO PCT/JP2021/037426 patent/WO2022080272A1/ja not_active Ceased
- 2021-10-08 IL IL302116A patent/IL302116A/en unknown
- 2021-10-08 US US18/031,801 patent/US20230386853A1/en active Pending
- 2021-10-15 TW TW110138291A patent/TWI798875B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022080272A1 (ja) | 2022-04-21 |
| EP4231334A1 (en) | 2023-08-23 |
| JPWO2022080272A1 (https=) | 2022-04-21 |
| EP4231334A4 (en) | 2024-11-13 |
| KR20230066074A (ko) | 2023-05-12 |
| US20230386853A1 (en) | 2023-11-30 |
| CN116325090A (zh) | 2023-06-23 |
| TW202225484A (zh) | 2022-07-01 |
| CN116325090B (zh) | 2026-03-24 |
| KR102828130B1 (ko) | 2025-07-03 |
| TWI798875B (zh) | 2023-04-11 |
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