TWI796359B - 具有增強之抗等離子體特性之粘合材料及相關方法 - Google Patents

具有增強之抗等離子體特性之粘合材料及相關方法 Download PDF

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TWI796359B
TWI796359B TW107131713A TW107131713A TWI796359B TW I796359 B TWI796359 B TW I796359B TW 107131713 A TW107131713 A TW 107131713A TW 107131713 A TW107131713 A TW 107131713A TW I796359 B TWI796359 B TW I796359B
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adhesive sheet
adhesive
etch
region
resistant
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TW107131713A
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TW201923000A (zh
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傑森 瑞特
安格斯 麥克法登
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美商泰科耐斯集團有限公司
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Abstract

本技術的若干實施方式涉及粘合具有增強的抗等離子體特性的片材，並用於粘合至半導體裝置。在一些實施方式中，根據本技術的粘合片包括基礎粘合材料，該基礎粘合材料具有嵌設在其中的一個或多個熱傳導元件，以及圍繞相鄰半導體構件的特定區域或相應特徵所形成的一個或多個蝕刻開口。粘合材料可包括PDMS、FFKM或矽基聚合物，並且抗蝕刻構件可包括PEEK或PEEK塗覆的構件。

Description

具有增強之抗等離子體特性之粘合材料及相關方法
本公開涉及在半導體裝置加工期間所使用的粘合（bonding）材料，並且更具體地涉及抗等離子體和/或抗蝕刻處理的粘合材料。
半導體元件包括使用一種或多種粘合材料彼此附接的各半導體構件或部件。在加工室中的操作期間，各構件和粘合材料暴露於等離子體環境，例如在可能損壞粘合材料的溫度和化學條件下而進行的蝕刻加工。在這樣的環境中，粘合材料可能遭受明顯的侵蝕，從而導致粘合材料壽命較短以及分層的可能性增加。
另外，粘合材料的侵蝕可能會增加半導體製造室內的顆粒及熱的非均一性。處理該問題的一種方法是採用具有高抗等離子體的粘合材料來防止侵蝕。然而，該方法的一個缺點是抗等離子體材料可能非常昂貴，並且隨著時間的推移可能被消耗掉。因此，該方法的花費使得其在許多半導體元件上使用變得不切實際。處理該問題的另一種嘗試方法是將粘合材料與等離子體蝕刻處理遮罩開，使得粘合材料不暴露於等離子體環境。然而，該方法對於許多應用也變得不切實際，因為持續需要半導體構件的幾何形狀變得更小，因此通常難以完全遮罩粘合材料以使其不被暴露。因此，需要其他方法來提供具有更強的抗等離子體和抗蝕刻處理性能的粘合材料。
一種與半導體構件一起使用的粘合片，所述粘合片包括： 第一側，其被配置為附接至第一半導體構件； 第二側，其被配置為附接至第二半導體構件； 抗蝕刻材料，其被設置在所述粘合片的第一區域中； 粘合材料，其被設置在所述粘合片的第二區域中；以及 多個熱傳導元件，其被嵌設在所述第二區域中的所述粘合材料內， 其中各個第一區域與各個第二區域均不相同，且第一區域被設置在第二區域附近。
一種用於將一個或多個半導體構件彼此附接的裝置，所述裝置包括： 粘合片，其包括 第一側，其被配置為附接至第一半導體構件， 與第一側相對的第二側，其被配置為附接至第二半導體構件， 粘合材料，其基本跨越所述粘合片的厚度； 抗蝕刻材料，其被設置在從所述第一側延伸穿過所述粘合片而到達所述第二側的開口中；以及 多個熱傳導元件，其被嵌設在所述粘合材料中，所述熱傳導元件被配置為當暴露于等離子體加工時分解成氣體。
一種製造粘合片的方法，該方法包括： 在包括粘合材料的粘合片中形成多個開口，所述開口至少部分地延伸穿過所述粘合片，並且所述粘合材料包括在所述粘合材料內的多個熱傳導元件；以及 採用抗蝕刻材料填充所述粘合片的所述開口，所述抗蝕刻材料包括聚醚醚酮（PEEK）或全氟彈性體（FFKM）中的至少一種。
在以下描述中，討論了許多具體細節以為本技術的實施方式提供全面且可行的描述。然而，相關領域的技術人員將認識到，可在一個或多個具體細節不存在的情況下來實踐本公開。在其他情況下，經常與半導體裝置相關聯的眾所周知的結構或操作並未示出或未進行詳細描述，以避免使該技術的其他方面模糊不清。通常，應當理解的是，除了本文所公開的那些特定實施方式之外的多種其他裝置、系統以及方法可在本技術的範圍內。
如上所述，用於粘合半導體裝置和/或部件的粘合材料的設計需求不斷增大，以經受等離子體環境和化學物質，這通常導致大量粒子產生。因此，根據本技術的粘合材料的若干實施方式包括粘合片，與常規的粘合材料相比，當暴露于等離子體環境時，該粘合片則引起明顯更少的顆粒產生。本技術的粘合材料被設置在第一半導體構件（component）與第二半導體構件之間，並將第一半導體構件附接至第二半導體構件。該粘合片可包括基礎粘合材料以及結合在其中的多個熱傳導元件。該熱傳導元件可包括有機和/或無機填料，並且在一些實施方式中，被配置為在半導體加工期間分解為氣相。粘合片還可包括填充有抗蝕刻構件的蝕刻開口。
圖1A是半導體元件100（“元件100”）的示意性剖視圖，圖1B是沿圖1A的線1B-1B截取的組件100的示意性俯視平面圖。一起參照圖1A和1B，元件100包括第一半導體構件101、第二半導體構件102以及粘合片110，該粘合片110具有附接至第一半導體構件101的第一側111和附接至第二半導體構件102的第二側112。
第一半導體構件101和第二半導體構件102均可包括半導體元件的一個或多個部件或基板（substrates），該半導體元件包括但不限於再分佈結構、插入器、印刷電路板、介電間隔件、半導體晶片（die）（例如，邏輯晶片）或相關領域中已知的其他合適的基板。第一和第二半導體構件101、102可由適合於半導體加工方法的多種材料中的任一種製備而成，材料包括矽、玻璃、陶瓷材料（例如，氧化鋁、氮化鋁或鋁合金）、砷化鎵、氮化鎵、有機層壓板（laminates）等等。
粘合片110可包括粘合材料115、結合在粘合材料115中的熱傳導元件120（例如，顆粒填充物）、寬度不同並且至少部分地延伸穿過粘合片110的多個開口130a-d（統稱為“開口130”）以及在一個或多個開口130內的抗蝕刻構件125。在一些實施方式中，粘合片110可進一步包括粘合促進劑和/或其他元素，以延遲粘合材料115內的聚合或交聯。
粘合片110可以是自支撐片，該自支撐片是不可壓縮的，並且被配置為通過相關領域中的模切割、鐳射切割或其他已知的等離子體蝕刻加工來形成圖案。如以下更加詳細描述的，可製造粘合片110以包括針對整體平整度、厚度、熱導率、伸長率和/或其他設計因素的參數（specification）。這些因素中的每一個可根據粘合片110被用於的特定應用而變化，並且通常，平整度、厚度、熱導率和伸長率可以是這些性質的任何期望值。在一些實施方式中，該片可包括（a）小於約20微米的粘合片110表面寬度上的平整度參數，（b）厚度參數為約200微米或更大、約120微米、或小於約100微米，（c）熱導率參數小於約0.30W/m·K、約0.3W/m·K至約0.5W/m·K、或約0.25W/m·K至約0.8W/m·K，和（d）伸長率參數從約5％到約18％。該粘合片110還可包括熱均勻性參數，該熱均勻性參數將粘合片110表面上的溫差限制為約2℃或更低。
粘合材料115可包括操作溫度範圍為約-60℃至約180℃或更高的聚合物粘合劑。在一些實施方式中，粘合材料115可包括矽基聚合物，例如聚二甲基矽氧烷（PDMS）、或含氟彈性體（FKM），例如全氟彈性體（FFKM）。如以下更加詳細描述的，粘合材料115被配置為形成圖案和蝕刻以在第一和/或第二半導體構件101、102上產生與相應特徵（例如，氣孔、流體孔、電源連接件等）相鄰的開口130。
如前所述，粘合材料115可包括被結合在粘合材料115中的一個或多個熱傳導元件120。該熱傳導元件120可包括氮化硼（BN）顆粒（例如，立方-BN）或其他材料，和/或有機填料（例如，二氧化矽顆粒），該有機填料懸浮在粘合材料115中並被配置為當暴露于等離子體加工時則分解為氣相。因此，在一些實施方式中，當粘合材料115被暴露於等離子體和/或蝕刻加工時，熱傳導元件120不產生顆粒，或產生相對較少的顆粒。在一些實施方式中，導熱元件120的細微性可包括不同尺寸的顆粒的基質，並且可具有尺寸在約1納米至約10微米之間變化的表面寬度或直徑。存在於粘合材料115中的熱傳導元件120的量可在約5％至約25％或更大的範圍內變化，並且可用於改變先前所討論的粘合片110的一個或多個參數。例如，氮化硼顆粒具有比PDMS更高的熱導率以及更低的彈性。因此，當粘合片由PDMS製成時，粘合材料115內的氮化硼顆粒將增加熱導率，並降低粘合片110的彈性。氮化硼顆粒還可以增加粘合片110的機械強度。有機填料可包括與氮化硼相類似的參數，並且可以類似的方式來調節顆粒相對於粘合材料115的百分比。存在於粘合材料115中的熱傳導元件的量也可用於稀釋粘合片110中所使用的粘合材料115的相對量。一些粘合材料115，例如FFKM，是相對昂貴的原材料，並且熱傳導元件（例如，二氧化矽）可用於減少FFKM的量，並因此減少粘合片110的總成本。
放置在粘合片110的開口130內的抗蝕刻構件125可對等離子體加工具有特定的抗侵蝕性，其至少與粘合材料115的抗侵蝕性相同。抗蝕刻構件125可包括陶瓷材料和/或塗覆有一種或多種抗等離子體材料的元件。在一些實施方式中，抗蝕刻構件125可包括聚醚醚酮（PEEK）、FFKM和/或塗覆有抗等離子體塗層（例如氧化釔（Y2 O3 ）、氟化釔（YF3 ）、氟氧化釔（YOF））的PEEK盤。可在相對低的溫度（例如，25℃）下使用薄膜沉積工藝來製備塗覆的PEEK盤。在一些實施方式中，例如當粘合材料115包括FFKM時，可以省略抗蝕刻構件125，因為FFKM足夠耐受等離子體加工，並且不需要額外的抗蝕刻構件。在這樣的實施方式中，包含FFKM和嵌入其中的熱傳導顆粒的粘合片可單獨使用，以將半導體裝置彼此粘合。
如圖1B中所示的所示實施方式中所示，抗蝕刻構件125可被配置為設置在不同寬度的開口130內，和/或開口130的尺寸可被設定為容納該抗蝕刻構件125。圖1B中所示的所示實施方式旨在僅示出可被包括在粘合片110中的開口130和抗蝕刻構件125的一些不同尺寸、配置以及空間取向。在其他實施方式中，開口130和抗蝕刻構件125可包括其他尺寸、配置以及空間取向。例如，在一些實施方式中，開口130可全部具有相同的寬度。
本技術的一些實施方式的一個好處是能夠形成可以暴露於等離子體加工而不產生大量顆粒的粘合片。例如，因為熱傳導元件可被配置為當暴露于等離子體加工時分解成氣體，並且抗蝕刻構件被配置為至少部分地抗等離子體加工，因此相對于傳統的粘合片，粘合片暴露於等離子體加工則導致產生較少的顆粒。這樣，通過限制在等離子體加工期間所產生的顆粒的量，粘合片的強度由此可保持更長的時間，並且所附接的第一和/或第二半導體裝置的分層的可能性會降低。
本技術的一些實施方式的又一個好處是可以生產能經受等離子體和蝕刻加工的粘合片，而且生產相對便宜。形成具有抗等離子體構件的粘合片可能是不切實際的，因為這些構件的原材料太貴。然而，利用本技術，抗蝕刻構件被結合到整個粘合材料的特定區域中，因此能以較低的成本生產，並被用於更多的半導體裝置加工應用中。
本技術的一些實施方式的又一個好處是能夠將粘合片形成圖案，並使圖案具有高的耐受性。不同於連接加工（joining process）中可施用的、可流動的液體組分通常難以形成高精度圖案，片狀可根據要用抗蝕刻構件覆蓋的相鄰半導體裝置上的相應特徵的特定尺寸來精確切割。這種更精確地切割粘合片的能力因此可減少特徵周圍所需的排除區域的量，並確保實際上僅去除掉最少量的粘合材料。因此，剩餘的額外粘合材料可以提供與相鄰半導體裝置更強的結合，並且通過傳導提供更多的熱流，從而在粘合材料的表面上產生更好的熱均勻性。
圖2A-2E是示出形成半導體元件200（“元件200”）（圖2B-2E）的方法的示意性剖面圖。首先參照圖2A，粘合片110包括粘合材料115以及分佈和/或懸浮在粘合材料115內的熱傳導元件120。粘合片110可進一步包括基本上覆蓋粘合片110的第一側111的第一保護材料205；以及基本上覆蓋粘合片110的第二側112的第二保護材料206。第一和第二保護材料205、206可以是，例如，粘合膜（例如，晶片附接膜（die-attach films））、環氧樹脂、膠帶、糊劑或其他合適的材料。在一些實施方式中，第一和第二保護材料205、206為相同的材料和/或具有基本相同的厚度。
圖2B示出了從粘合片110移除（例如，剝離）第二保護材料206，並使粘合片110的第二側112與第二半導體構件102接觸之後的元件200。然後，可對粘合片110的第一側111進行模切割、鐳射切割和/或暴露於光刻（lithography）技術，以在粘合片110中形成一個或多個開口（圖2C）。如圖2B所示的實施方式中所示，掩模210（例如，光致抗蝕劑）可被設置或形成在粘合片110的第一側111上，以選擇性地將粘合片110在第二半導體構件102的相應特徵（例如，氣孔、流體孔、電源連接件或其他不同的區域）周圍形成圖案。如前所述，粘合片110可相對于傳統的液體粘合材料以更高的精度進行切割，因此可使第二半導體裝置102的特徵周圍所需的清除最小化。在一些實施方式中，粘合片110和/或被粘合到粘合片110的相鄰半導體構件可包括一個或多個對準銷或標記，以説明確保掩模210被精確地設置在第二半導體裝置102的相應特徵周圍。
接下來參考圖2C和2D，形成延伸穿過粘合片110的開口130，並隨後採用耐蝕刻構件125填充。如前所述，耐蝕刻構件125可包括固體PEEK盤（例如，墊圈），其被配置為配合並放置在粘合片110中所形成的特定開口130內。在這樣的實施方式中，PEEK盤的厚度可近似等於粘合片110的厚度。在其他實施方式中，耐蝕刻構件125可為液體形式，並被分配在粘合片110上，從而填充開口130。圖2E示出了從粘合片110移除第一保護材料205，並使第一半導體構件101與粘合片110的第一側111接觸之後的元件200。
在其他實施方式中，本技術能以不同方式和/或以與先前所公開的不同的順序來粘合半導體構件。例如，在一些實施方式中，粘合材料以及結合在其中的結合的熱傳導元件能以液體形式存在。在這樣的實施方式中，抗蝕刻構件125可被設置在第一半導體構件的特定區域上，然後液體粘合材料以及結合的熱傳導元件可被分配在抗蝕刻構件125上。隨後，液體粘合材料可固化形成粘合片。
本公開並非旨在窮舉或將本技術限制在本文所公開的精確形式中。如相關領域的普通技術人員將認識到的，儘管出於說明性目的在本文中公開了特定實施方式，但在不背離本技術的情況下可以進行多種等同修改。在一些情況下，公知的結構以及功能未詳細示出或描述，以避免不必要地使本技術的實施方式的描述模糊不清。儘管本文中以特定的順序來呈現方法的步驟，但是替代實施方式則能以不同的順序來執行這些步驟。類似地，在特定實施方式的上下文中所公開的本技術的某些方面可在其他實施方式中進行組合或排除。此外，雖然可在那些實施方式的上下文中公開與本技術的某些實施方式相關聯的優點，但是其他實施方式也可以表現出這些優點，並且並非所有的實施方式都必須表現出本文所公開的這些優點或其他優點，以落入本技術的範圍內。因此，本公開和相關技術可以涵蓋本文中未明確示出或描述的其他實施方式，並且除了所附權利要求之外，本發明不受限制。
在整個本公開中，除非上下文另有明確說明，否則單數術語“一個（a）”，“一個（an）”和“該（the）”包括複數指示物件。類似地，根據兩個或更多專案的列表，除非“或”一詞明確限於僅表示與其他專案不同的單一專案，否則在這樣的列表中使用“或”將被解釋為包括（a）列表中的任何單項，（b）列表中的所有項目，或（c）清單中任何專案的組合。另外，術語“包括（comprising）”、“包括（including）”和“具有”始終用於表示至少包括所限定的特徵，從而使得任何更多數量的相同特徵和/或其他類型的其他特徵不被排除。本文對“一個實施方式（one embodiment）”、“實施方式（an embodiment）”或類似簡潔陳述（formulations）的引用意味著結合該實施方式所描述的特定特徵、結構、操作或特性可被包括在本技術的至少一個實施方式中。因此，本文中這些短語或簡潔陳述的出現不一定都是指相同的實施方式。此外，多種特定特徵、結構、操作或特性可在一個或多個實施方式中以任何合適的方式進行組合。如本文所用，除非另有說明，否則當出現在某一值之前時，“約”或“近似”應當解釋為表示該值的±10％。例如，約200微米的厚度應當解釋為覆蓋180微米至220微米的厚度。
100‧‧‧半導體元件 101‧‧‧第一半導體構件 102‧‧‧第二半導體構件 110‧‧‧粘合片 111‧‧‧第一側 112‧‧‧第二側 115‧‧‧粘合材料 120‧‧‧熱傳導元件 125‧‧‧抗蝕刻構件 130a-d‧‧‧開口 200‧‧‧半導體元件 205‧‧‧第一保護材料 206‧‧‧第二保護材料 210‧‧‧掩模
圖1A是根據本技術的實施方式沿圖1B的線1A-1A所截取的半導體元件的示意性剖視圖； 圖1B是根據本技術的實施方式沿圖1A的線1B-1B所截取的圖1A中所示的半導體元件的示意性俯視平面圖； 圖2A-2E是根據本技術的實施方式形成半導體元件的方法的示意性剖視圖。
100‧‧‧半導體元件
101‧‧‧第一半導體構件
102‧‧‧第二半導體構件
110‧‧‧粘合片
111‧‧‧第一側
112‧‧‧第二側
115‧‧‧粘合材料
120‧‧‧熱傳導元件
125‧‧‧抗蝕刻構件
130a-d‧‧‧開口

Claims (19)

  1. 一種與半導體構件一起使用的粘合片，所述粘合片包括：第一側，其被配置為附接至第一半導體構件；第二側，其被配置為附接至第二半導體構件；抗蝕刻材料，其被設置在所述粘合片的第一區域中；粘合材料，其被設置在所述粘合片的第二區域中；以及多個熱傳導元件，其被嵌設在所述第二區域中的所述粘合材料內，其中各個第一區域與各個第二區域均不相同，且第一區域被第二區域圍繞，其中所述抗蝕刻材料包括抗等離子體塗層，所述抗等離子體塗層包括氧化釔(Y2O3)、氟化釔(YF3)和氟氧化釔(YOF)中的至少一種。
  2. 如申請專利範圍第1項所述的粘合片，其中所述熱傳導元件被配置為當暴露于等離子體加工時分解成氣體。
  3. 如申請專利範圍第1項所述的粘合片，其中：所述粘合材料包括聚二甲基矽氧烷(PDMS)和含氟彈性體(FKM)中的至少一種，所述抗蝕刻材料包括聚醚醚酮(PEEK)，並且所述熱傳導元件包括有機填料，所述有機填料被配置為當暴露于等離子體加工時分解成氣體。
  4. 如申請專利範圍第1項所述的粘合片，其中所述粘合片具有： 厚度小於約200微米，所述粘合片長度上的平整度小於約20微米，並且伸長率參數從約5%到約18%。
  5. 如申請專利範圍第1項所述的粘合片，進一步包括：熱導率小於約0.3W/m．K，並且熱均勻性使得所述粘合片的表面上的溫差在約-60℃至約180℃的溫度範圍內等於或小於約2℃。
  6. 如申請專利範圍第1項所述的粘合片，其中所述粘合材料包括聚二甲基矽氧烷(PDMS)。
  7. 如申請專利範圍第1項所述的粘合片，其中所述粘合材料包括含氟彈性體(FKM)。
  8. 如申請專利範圍第1項所述的粘合片，其中所述第一區域對應於填充有所述抗蝕刻材料的所述粘合片中的開口，其中至少一部分的所述開口的直徑彼此不同，並且其中至少一部分的所述開口被設置為與所述第一半導體構件、所述第二半導體構件或兩者上的特徵相對齊。
  9. 如申請專利範圍第1項所述的粘合片，其中所述熱傳導元件包括懸浮在所述粘合材料中的顆粒，所述顆粒包括二氧化矽顆粒和氮化硼(BN)中的至少一種。
  10. 如申請專利範圍第1項所述的粘合片，其中所述抗蝕刻材料包括聚醚醚酮(PEEK)。
  11. 如申請專利範圍第1項所述的粘合片，其中所述第一和第二區域中的每一個從所述第一側延伸穿過整個所述粘合片而到達所述第二側，並且其中所述粘合片的最外表面在所述抗蝕刻材料和所述粘合材料之間交替。
  12. 如申請專利範圍第1項所述的粘合片，進一步包括一種或多種粘合促進劑，所述粘合促進劑被配置為抑制所述粘合材料的聚合或交聯。
  13. 一種用於將一個或多個半導體構件彼此附接的裝置，所述裝置包括：粘合片，其包括第一側，其被配置為附接至第一半導體構件，與第一側相對的第二側，其被配置為附接至第二半導體構件，粘合材料，其基本跨越所述粘合片的厚度；抗蝕刻材料，其被設置在從所述第一側延伸穿過所述粘合片而到達所述第二側的開口中，其中所述抗蝕刻材料包括抗等離子體塗層，所述抗等離子體塗層包括氧化釔(Y2O3)、氟化釔(YF3)和氟氧化釔(YOF)中的至少一種；以及多個熱傳導元件，其被嵌設在所述粘合材料中，所述熱傳導元件被配置為當暴露于等離子體加工時分解成氣體。
  14. 如申請專利範圍第13項所述的裝置，其中：所述抗蝕刻材料被設置在所述粘合片的第一區域中，並且 所述粘合材料被設置在所述粘合片的第二區域中，其與所述第一區域不同，且所述第二區域包括所述開口。
  15. 如申請專利範圍第13項所述的裝置，其中：所述粘合材料包括聚二甲基矽氧烷(PDMS)和含氟彈性體(FKM)中的至少一種，所述抗蝕刻材料包括聚醚醚酮(PEEK)，並且所述熱傳導元件包括有機填料。
  16. 如申請專利範圍第13項所述的裝置，其中所述粘合材料包括全氟彈性體(FFKM)。
  17. 如申請專利範圍第13項所述的裝置，其中所述厚度小於約200微米，所述導熱係數小於約0.3W/m．K，所述粘合片長度上的平整度小於約20微米，並且所述伸長率參數從約5%到約18%。
  18. 一種製造粘合片的方法，該方法包括：在包括粘合材料的粘合片中形成多個開口，所述開口至少部分地延伸穿過所述粘合片，並且所述粘合材料包括在所述粘合材料內的多個熱傳導元件；以及採用抗蝕刻材料填充所述粘合片的所述開口，所述抗蝕刻材料至少包括聚醚醚酮(PEEK)，所述抗蝕刻材料包括抗等離子體塗層，所述抗等離子體塗層包括氧化釔(Y2O3)、氟化釔(YF3)和氟氧化釔(YOF)中的至少一種。
  19. 如申請專利範圍第18項所述的方法，其中所述抗蝕刻材料包含全氟彈性體(FFKM)。
TW107131713A 2017-09-15 2018-09-10 具有增強之抗等離子體特性之粘合材料及相關方法 TWI796359B (zh)

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